Co-Chairs: H.S. Rathore and R. Singh
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:05 | Introductory Remarks | ||
| 10:10 | 218 | Ultra Low K Dielectrics - Shortening the Time Line from R&D to Manufacturing - B. Ahlburn, C. Hartfield, and T. Moore (Texas Instruments Incorporated) | |
| 10:40 | 219 | Deposition and Characterization of Perfluoro-Methyl Silica Films - T. Fukumura, S. Sugahara, and M. Matsumura (Tokyo Institute of Technology) | GIF |
| 11:00 | 220 | Development of PECVD Low-k Carbon-doped Silicon Oxide Using SiH4 Based Precursor - H. Yang, D. Tweet, L. Stecker, W. Pan, D. Evans, and S.T. Hsu (Sharp Laboratory of America) | |
| 11:20 | 221 | Characterization of Silica Films Having Olefin Groups - K.-I. Usami, S. Sugahara, and M. Matsumura (Tokyo Institute of Technology) | |
| 11:40 | 222 | Properties of SiO2 Mesoporous Thin Films Synthesized by Molecular Templated Sol-Gel Processes - I. Honma, H.-S. Zhou (AIST), A. Endo (National Institute of Materials and chemical Research), T. Yamada, K. Asai, and K. Ishigure (The University of Tokyo) |
Co-Chairs: M.J. Loboda and R. Singh
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | Introductory Remarks | ||
| 2:05 | 223 | DIELECTRIC SCIENCE AND TECHNOLOGY DIVISION THOMAS D. CALLINAN AWARD ADDRESS-3-D ICs with Multiple Si Layers: Performance Analysis, and Technology - K. Saraswat, K. Banerjee, A. Joshi, P. Kalavade, S. Souri, and V. Subramanian (Stanford University) | |
| 2:35 | 224 | Dry Etch and Clean Aspects for Advanced Integration of Low k Dielectrics - S. Vanhaelemeersch, H. Struyf, C. Alaerts, M. Baklanov, and M. Lepage (IMEC vzw) | |
| 3:05 | 225 | Using NH3 Plasma Treated Spin-on Low-k Film as Barrier Metal-Free Dielectric to Suppress Copper Diffusion and Improve Its Ashing Resistance - I.-C. Deng, Y.-P. Tsai, S.-J. Yeh, and K.-M. Chang (National Chiao Tung University and National Nano Device Lab.) | |
| 3:25 | Fifteen-Minute Intermission | ||
| 3:40 | 226 | Integration Issues for New Dielectrics in CMOS Technology - S. Gates, S.T. Chen, X. Chen, S. Cohen, D. Edelstein, J. Fitzsimmons, J. Hedrick, D. Restaino, J. Ryan, E. Simonyi, and S. Purushothaman (IBM) | |
| 4:10 | 227 | Downstream Oxygen Plasma Etching of Parylene-N: Comparison of Experimental and Theoretical Data - R. Callahan, G. Raupp, and S. Beaudoin (Arizona State University) | |
| 4:30 | 228 | Low K: Damascene Integration Issues - G. Passemard (ST Microelectronics) and O. Demolliens (LETI GRESSI) | |
| 5:00 | 229 | Simplified Intermetal Dielectric Integration With Chemical Vapor Deposited Low k Material Using Organosilane/Ozone Chemistry - L.-Q. Xia, F. Gaillard, F. Geiger, T.-H. Lim, H. Nguyen, and E. Yieh (Applied Materials, Inc.) | |
| 5:20 | 230 | Effect of NH3 Plasma Treatment on Improvement of Reliability of W-B-N/HSQ Thin Films - D.J. Kim (Hanyang University), H.S. Sim, Y.T. Kim (Korea Institute of Science and Technology), and J.-W. Park (Hanyang University) | |
| 5:40 | 231 | Low Dielectric Constant Material Deposited by HDPCVD for Barrier and Etch Stop Application in Cu Damascene Structure - S.-M. Cho, L. Zhang, H. M'saad, and L. Zhuang (Applied Materials) |
Co-Chairs: M.J. Loboda and H.S. Rathore
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:30 | 232 | Multiphase Low-k Materials Prepared by PECVD - A. Grill and V. Patel (IBM Research Division) | |
| 9:00 | 233 | The Influence of Temperature on the Deposition of Low-k Films by PECVD of Trimethylsilane - B.K. Hwang, M. Loboda, G. Cerny, R. Schneider, and J. Seifferly (Dow Corning Corporation) | |
| 9:20 | 234 | Dielectric and Thermally Conducting Polymer-Matrix Composites Improved by Filler Surface Treatments - Y. Xu and D.D.L. Chung (State University of New York at Buffalo) | |
| 9:40 | 235 | Enhancement of Organic Low-k Hybrid-Organic-Siloxane-Polymer (HOSP) in Resisting Oxygen Plasma Process - T.-C. Chang (National Sun Yat-Sen University), P.-T. Liu, H. Su, C.-F. Chang (National Chiao Tung University), Y.-L. Yang (National Nano Device Laboratory), and J. Hou (Allied Signal inc. Taiwan) | |
| 10:00 | Twenty-Minute Intermission | ||
| 10:20 | 236 | A Study on the Formation and Characteristics of a-Fluoronated Carbon Films by CF4/CH4-ICPCVD - M.S. Kang, K.S. Oh, C.K. Choi (Cheju National University), S.H. Um, and H.Y. Chang (Korea Advanced Institute of Science and Technology) | |
| 10:40 | 237 | Effect of Curing Temperature and Thickness on the Thermal Conductivity of Hydrogen Silsesquioxane Thin Films - H.-C. Liou (Dow Corning Corporation) and H. Wang (Oak Ridge National Laboratory) | |
| 11:00 | 238 | Rapid Curing of Polymer Dielectrics by Variable Frequency Microwave Curing - K. Farnsworth, R. Manepalli, S.A.B. Allen, and P. Kohl (Georgia Institute of Technology) | |
| 11:20 | 239 | Improvement in the Characteristics of Post-CMP Low-k Methylsilsesquioxane(MSQ) - T.-C. Chang (National Sun Yat-Sen University), P.-T. Liu, M.-C. Huang (National Chiao Tung University), T.-M. Tsai (Nation Tsing Hua University), K.-C. Hsu (National Chiao Tung University), Y.-L. Yang (National Nano Device Laboratory), S.M. Sze (National Chiao Tung University), H. Chung, and J. Hou (Allied Signal inc. Taiwan) | |
| 11:40 | 240 | Ammonia Plasma Passivation Effects on Properties of Post-CMP Low-k Hydrogen Silsesquioxane (HSQ) - T.-C. Chang (National Sun Yat-Sen University), P.-T. Liu (National Chiao Tung University), T.-M. Tsai (National Tsing Hua University), C.-F. Chang (National Chiao Tung University), Y.-L. Yang (National Nano Device Laboratory), S.M. Sze (National Chiao Tung University), F.Y. Shih, E. Tsai, G. Chen, and J.K. Lee (Dow Coring Taiwan Inc.) |
Co-Chairs: R. Singh and S.S. Ang
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 241 | Characterization of Ashing Effects on Low-k Dielectric Films - R.A. Shepherd, D. Nguyen (GaSonics International Corporation), G. Cerny, H.-C. Liou, and M. Loboda (Dow Corning) | |
| 2:30 | 242 | Electron Beam Curing of Thin Film Polymer Dielectrics - R. Manepalli, K. Farnsworth, S.A.B. Allen, and P. Kohl (Georgia Institute of Technology) |
Co-Chair: S.S. Ang\\ R. Singh
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:50 | 243 | Experimental Observation of Ta2O5 Gate Dielectric Transistors - G. Bersuker, M. Gilmer, P.M. Zeitzoff, G.A. Brown, M.D. Jackson, F. Shaapur, B. Foran, and H.R. Huff (SEMATECH) | |
| 3:10 | 244 | Characterization of High-K Dielectrics Using the Non-Contact Surface Charge Profiler (SCP) Method - P. Roman, D. Lee (Penn State University), P. Mumbauer, R. Grant (PRIMAXX, Inc.), E. Kamieniecki (QC Solutions, Inc.), and J. Ruzyllo (Penn State University) | |
| 3:30 | Twenty-Minute Intermission | ||
| 3:50 | 245 | Charge Transport in Anodized Ta2O5 Thin Films - C.D.W. Jones, R.M. Fleming, D.V. Lang, M.L. Steigerwald, D.W. Murphy, B. Vyas, G.B. Alers, Y.-H. Wong, R.B. van Dover, J.R. Kwo, and A.M. Sergent (Bell Labs - Lucent Technologies) | |
| 4:00 | 246 | Characterization of Gd2O3 Films Deposited on Si(100) by E-Beam Evaporation from Pressed-Powder Targets - D. Landheer, J. Gupta, J. Hulse, I. Sproule, J. McCaffrey, M. Graham (National Research Council of Canada), K.-C. Yang, and Z. Lu (University of Toronto) | |
| 4:20 | 247 | Processing Effects and Electrical Evaluation of ZrO2 Formed by RTP Oxidation of Zr - R. Nieh, W.-J. Qi, B.H. Lee, L. Kang, Y. Jeon, K. Onishi, and J.C. Lee (University of Texas at Austin) | |
| 4:40 | 248 | Low-Defect Anodized Ta for Use as a Dielectric in High-Value Integrated Capacitors - R. Ulrich, Y. Xi, A. Date, M. Wasef, and R. Pandey (University of Arkansas) | |
| 5:00 | 249 | Electrical Properties of MOCVD-TaOxNy as a Storage Capacitor Material for Next Generation Devices - B.-S. Kim, S.-L. Cho, H.-M. Kim, and K.-B. Kim (Seoul National University) | |
| 5:20 | 250 | Structure and Properties of Sputter Deposited Tantalum Oxynitride Film - H.-M. Kim, S.-L. Cho, B.-S. Kim, and K.-B. Kim (Seoul National University) | |
| 5:40 | 251 | Metal Electrode Challenges with the Emergence of High Permittivity Dielectric Materials - C. Hoover (Praxair, Inc.) |
Co-Chairs: S.S. Ang\\ S.S. Ang and M.J. Loboda
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 252 | High k Dielectric Tantalum Oxide Films Grown in an LPCVD Batch Furnace - M.A.A.M. van Wijck, R.J. Wilhelm, and H. Sprey (ASM Europe) | |
| 10:20 | 253 | MOCVD Processing of Pt Films for High-K, Bottom Electrode Applications - C.V. Srividya, D.R. Campbell, J. Dalton, R. Randive, and A. Paranjpe (CVC, Inc.) | |
| 10:40 | 254 | Thermal Stability of Ta2O5 Films in Capacitor Systems Using TiN Metal Electrode - M.G.-L. Tay, H.C. Zeng (National University of Singapore), J. Sudijono, A. See, C.T. Chua (Chartered Semiconductor Mfg. Ltd.), and K. Pita (Singapore Productivity and Standards Board) | |
| 11:00 | 255 | Studies of High-k Gate Dielectrics Deposited by the Liquid Source Misted Chemical Deposition Method - D. Lee, P. Roman (Penn State University), P. Mumbauer, R. Grant (PRIMAXX, Inc.), M. Horn, and J. Ruzyllo (Penn State University) | |
| 11:20 | 256 | Thermal Stability of RuO2TiN-Based Bottom Electrodes for High Dielectric Constant Oxides - J.-S. Chen and F.S. Lee (National Cheng Kung University) | GIF |
| 11:40 | 257 | Dielectric Characteristics of Ta2O5 Thin Films on Poly-Si and RuO2 Bottom Electrodes - J.-S. Chen and J.H. Huang (National Cheng Kung University) | GIF |