197th Meeting - Toronto, Ontario, Canada

May 14-18, 2000

PROGRAM INFORMATION

D1 - Fifth International Symposium on Low and High Dielectric Constant Materials: Materials Science, Processing, and Reliability Issues

Dielectric Science and Technology Division

Monday, May 15, 2000

Windsor East and West, Mezzanine Level (Richmond Tower)

Low Dielectric Constant Materials

Co-Chairs: H.S. Rathore and R. Singh

TimeAbs#TitleView
10:05 Introductory Remarks
10:10218 Ultra Low K Dielectrics - Shortening the Time Line from R&D to Manufacturing - B. Ahlburn, C. Hartfield, and T. Moore (Texas Instruments Incorporated) PDF
10:40219 Deposition and Characterization of Perfluoro-Methyl Silica Films - T. Fukumura, S. Sugahara, and M. Matsumura (Tokyo Institute of Technology) GIF
11:00220 Development of PECVD Low-k Carbon-doped Silicon Oxide Using SiH4 Based Precursor - H. Yang, D. Tweet, L. Stecker, W. Pan, D. Evans, and S.T. Hsu (Sharp Laboratory of America) PDF
11:20221 Characterization of Silica Films Having Olefin Groups - K.-I. Usami, S. Sugahara, and M. Matsumura (Tokyo Institute of Technology) PDF
11:40222 Properties of SiO2 Mesoporous Thin Films Synthesized by Molecular Templated Sol-Gel Processes - I. Honma, H.-S. Zhou (AIST), A. Endo (National Institute of Materials and chemical Research), T. Yamada, K. Asai, and K. Ishigure (The University of Tokyo) PDF

Low Dielectric Constant Materials (cont'd)

Co-Chairs: M.J. Loboda and R. Singh

TimeAbs#TitleView
2:00 Introductory Remarks
2:05223 DIELECTRIC SCIENCE AND TECHNOLOGY DIVISION THOMAS D. CALLINAN AWARD ADDRESS-3-D ICs with Multiple Si Layers: Performance Analysis, and Technology - K. Saraswat, K. Banerjee, A. Joshi, P. Kalavade, S. Souri, and V. Subramanian (Stanford University) PDF
2:35224 Dry Etch and Clean Aspects for Advanced Integration of Low k Dielectrics - S. Vanhaelemeersch, H. Struyf, C. Alaerts, M. Baklanov, and M. Lepage (IMEC vzw) PDF
3:05225 Using NH3 Plasma Treated Spin-on Low-k Film as Barrier Metal-Free Dielectric to Suppress Copper Diffusion and Improve Its Ashing Resistance - I.-C. Deng, Y.-P. Tsai, S.-J. Yeh, and K.-M. Chang (National Chiao Tung University and National Nano Device Lab.) PDF
3:25 Fifteen-Minute Intermission
3:40226 Integration Issues for New Dielectrics in CMOS Technology - S. Gates, S.T. Chen, X. Chen, S. Cohen, D. Edelstein, J. Fitzsimmons, J. Hedrick, D. Restaino, J. Ryan, E. Simonyi, and S. Purushothaman (IBM) PDF
4:10227 Downstream Oxygen Plasma Etching of Parylene-N: Comparison of Experimental and Theoretical Data - R. Callahan, G. Raupp, and S. Beaudoin (Arizona State University) PDF
4:30228 Low K: Damascene Integration Issues - G. Passemard (ST Microelectronics) and O. Demolliens (LETI GRESSI) PDF
5:00229 Simplified Intermetal Dielectric Integration With Chemical Vapor Deposited Low k Material Using Organosilane/Ozone Chemistry - L.-Q. Xia, F. Gaillard, F. Geiger, T.-H. Lim, H. Nguyen, and E. Yieh (Applied Materials, Inc.) PDF
5:20230 Effect of NH3 Plasma Treatment on Improvement of Reliability of W-B-N/HSQ Thin Films - D.J. Kim (Hanyang University), H.S. Sim, Y.T. Kim (Korea Institute of Science and Technology), and J.-W. Park (Hanyang University) PDF
5:40231 Low Dielectric Constant Material Deposited by HDPCVD for Barrier and Etch Stop Application in Cu Damascene Structure - S.-M. Cho, L. Zhang, H. M'saad, and L. Zhuang (Applied Materials) PDF

Tuesday, May 16, 2000

Low Dielectric Constant Materials (cont'd)

Co-Chairs: M.J. Loboda and H.S. Rathore

TimeAbs#TitleView
8:30232 Multiphase Low-k Materials Prepared by PECVD - A. Grill and V. Patel (IBM Research Division) PDF
9:00233 The Influence of Temperature on the Deposition of Low-k Films by PECVD of Trimethylsilane - B.K. Hwang, M. Loboda, G. Cerny, R. Schneider, and J. Seifferly (Dow Corning Corporation) PDF
9:20234 Dielectric and Thermally Conducting Polymer-Matrix Composites Improved by Filler Surface Treatments - Y. Xu and D.D.L. Chung (State University of New York at Buffalo) PDF
9:40235 Enhancement of Organic Low-k Hybrid-Organic-Siloxane-Polymer (HOSP) in Resisting Oxygen Plasma Process - T.-C. Chang (National Sun Yat-Sen University), P.-T. Liu, H. Su, C.-F. Chang (National Chiao Tung University), Y.-L. Yang (National Nano Device Laboratory), and J. Hou (Allied Signal inc. Taiwan) PDF
10:00 Twenty-Minute Intermission
10:20236 A Study on the Formation and Characteristics of a-Fluoronated Carbon Films by CF4/CH4-ICPCVD - M.S. Kang, K.S. Oh, C.K. Choi (Cheju National University), S.H. Um, and H.Y. Chang (Korea Advanced Institute of Science and Technology) PDF
10:40237 Effect of Curing Temperature and Thickness on the Thermal Conductivity of Hydrogen Silsesquioxane Thin Films - H.-C. Liou (Dow Corning Corporation) and H. Wang (Oak Ridge National Laboratory) PDF
11:00238 Rapid Curing of Polymer Dielectrics by Variable Frequency Microwave Curing - K. Farnsworth, R. Manepalli, S.A.B. Allen, and P. Kohl (Georgia Institute of Technology) PDF
11:20239 Improvement in the Characteristics of Post-CMP Low-k Methylsilsesquioxane(MSQ) - T.-C. Chang (National Sun Yat-Sen University), P.-T. Liu, M.-C. Huang (National Chiao Tung University), T.-M. Tsai (Nation Tsing Hua University), K.-C. Hsu (National Chiao Tung University), Y.-L. Yang (National Nano Device Laboratory), S.M. Sze (National Chiao Tung University), H. Chung, and J. Hou (Allied Signal inc. Taiwan) PDF
11:40240 Ammonia Plasma Passivation Effects on Properties of Post-CMP Low-k Hydrogen Silsesquioxane (HSQ) - T.-C. Chang (National Sun Yat-Sen University), P.-T. Liu (National Chiao Tung University), T.-M. Tsai (National Tsing Hua University), C.-F. Chang (National Chiao Tung University), Y.-L. Yang (National Nano Device Laboratory), S.M. Sze (National Chiao Tung University), F.Y. Shih, E. Tsai, G. Chen, and J.K. Lee (Dow Coring Taiwan Inc.) PDF

Low Dielectric Constant Materials (cont'd)

Co-Chairs: R. Singh and S.S. Ang

TimeAbs#TitleView
2:00241 Characterization of Ashing Effects on Low-k Dielectric Films - R.A. Shepherd, D. Nguyen (GaSonics International Corporation), G. Cerny, H.-C. Liou, and M. Loboda (Dow Corning) PDF
2:30242 Electron Beam Curing of Thin Film Polymer Dielectrics - R. Manepalli, K. Farnsworth, S.A.B. Allen, and P. Kohl (Georgia Institute of Technology) PDF

High Dielectric Constant Materials

Co-Chair: S.S. Ang\\ R. Singh

TimeAbs#TitleView
2:50243 Experimental Observation of Ta2O5 Gate Dielectric Transistors - G. Bersuker, M. Gilmer, P.M. Zeitzoff, G.A. Brown, M.D. Jackson, F. Shaapur, B. Foran, and H.R. Huff (SEMATECH) PDF
3:10244 Characterization of High-K Dielectrics Using the Non-Contact Surface Charge Profiler (SCP) Method - P. Roman, D. Lee (Penn State University), P. Mumbauer, R. Grant (PRIMAXX, Inc.), E. Kamieniecki (QC Solutions, Inc.), and J. Ruzyllo (Penn State University) PDF
3:30 Twenty-Minute Intermission
3:50245 Charge Transport in Anodized Ta2O5 Thin Films - C.D.W. Jones, R.M. Fleming, D.V. Lang, M.L. Steigerwald, D.W. Murphy, B. Vyas, G.B. Alers, Y.-H. Wong, R.B. van Dover, J.R. Kwo, and A.M. Sergent (Bell Labs - Lucent Technologies) PDF
4:00246 Characterization of Gd2O3 Films Deposited on Si(100) by E-Beam Evaporation from Pressed-Powder Targets - D. Landheer, J. Gupta, J. Hulse, I. Sproule, J. McCaffrey, M. Graham (National Research Council of Canada), K.-C. Yang, and Z. Lu (University of Toronto) PDF
4:20247 Processing Effects and Electrical Evaluation of ZrO2 Formed by RTP Oxidation of Zr - R. Nieh, W.-J. Qi, B.H. Lee, L. Kang, Y. Jeon, K. Onishi, and J.C. Lee (University of Texas at Austin) PDF
4:40248 Low-Defect Anodized Ta for Use as a Dielectric in High-Value Integrated Capacitors - R. Ulrich, Y. Xi, A. Date, M. Wasef, and R. Pandey (University of Arkansas) PDF
5:00249 Electrical Properties of MOCVD-TaOxNy as a Storage Capacitor Material for Next Generation Devices - B.-S. Kim, S.-L. Cho, H.-M. Kim, and K.-B. Kim (Seoul National University) PDF
5:20250 Structure and Properties of Sputter Deposited Tantalum Oxynitride Film - H.-M. Kim, S.-L. Cho, B.-S. Kim, and K.-B. Kim (Seoul National University) PDF
5:40251 Metal Electrode Challenges with the Emergence of High Permittivity Dielectric Materials - C. Hoover (Praxair, Inc.) PDF

Wednesday, May 17, 2000

High Dielectric Constant Materials (cont'd)

Co-Chairs: S.S. Ang\\ S.S. Ang and M.J. Loboda

TimeAbs#TitleView
10:00252 High k Dielectric Tantalum Oxide Films Grown in an LPCVD Batch Furnace - M.A.A.M. van Wijck, R.J. Wilhelm, and H. Sprey (ASM Europe) PDF
10:20253 MOCVD Processing of Pt Films for High-K, Bottom Electrode Applications - C.V. Srividya, D.R. Campbell, J. Dalton, R. Randive, and A. Paranjpe (CVC, Inc.) PDF
10:40254 Thermal Stability of Ta2O5 Films in Capacitor Systems Using TiN Metal Electrode - M.G.-L. Tay, H.C. Zeng (National University of Singapore), J. Sudijono, A. See, C.T. Chua (Chartered Semiconductor Mfg. Ltd.), and K. Pita (Singapore Productivity and Standards Board) PDF
11:00255 Studies of High-k Gate Dielectrics Deposited by the Liquid Source Misted Chemical Deposition Method - D. Lee, P. Roman (Penn State University), P. Mumbauer, R. Grant (PRIMAXX, Inc.), M. Horn, and J. Ruzyllo (Penn State University) PDF
11:20256 Thermal Stability of RuO2TiN-Based Bottom Electrodes for High Dielectric Constant Oxides - J.-S. Chen and F.S. Lee (National Cheng Kung University) GIF
11:40257 Dielectric Characteristics of Ta2O5 Thin Films on Poly-Si and RuO2 Bottom Electrodes - J.-S. Chen and J.H. Huang (National Cheng Kung University) GIF