Co-Chairs: J.L. Stickney and T.P. Moffat
| Time | Abs# | Title | View |
|---|
| 10:00 | 346 |
Electrochemical Metal Deposition and Surface Architecture - D.M. Kolb (University of Ulm) |
PDF |
| 10:30 | 347 |
Underpotential Deposition of Lead on Cu(100), Cu(110) and Cu(111) - T. Moffat (NIST) |
PDF |
| 10:45 | 348 |
Magnetic Nanowire Arrays Obtained by Electrodepostion in Ordered Alumina Templates - K. Nielsch, F. Muller, R.B. Wehrspohn, U. Gosele (Max-Planck-Institut fur Mikrostrukturphysik), S.F. Fischer, and H. Kronmuller (Max-Planck-Institut fur Me
tallforschung) |
PDF |
| 11:00 | 349 |
Mapping Alloy Electrodeposition Conditions onto Deposit Characteristics for Microelectrode Arrays - J. Thomas, D. Buttry (University of Wyoming), and J. Pope (The Blue Sky Group) |
PDF |
| 11:15 | 350 |
Examination of the Nature of the Electro-Oxidized Layer of As on Pt(111) through Temperature-Dependent Research - G. Jerkiewicz, S. Blais (Universite de Sherbrooke), E. Herrero, and J. Feliu (Universidad de Alicante) |
PDF |
| 11:30 | 351 |
Experimental Conditions for InAs Deposition on Silver Single Crystals by Ecale - M.L. Foresti, M. Innocenti, G. Pezzatini, and F. Forni (University of Florence) |
PDF |
| 11:45 | 352 |
InAs and InSb Electrodeposition on Cu by EC-ALE - T. Wade (Unversity of Georgia), U. Happek (Department of Physics and Astronomy), R. Vaidyanathan, and J. Stickney (Unversity of Georgia) |
PDF |
| 12:00 | 353 |
Thin-Film CuIn1-xGaxSe2-Based Photovoltaic Cells from Electrodeposited and Electroless Deposited Precursors - R.N. Bhatacharya and W. Batchelor (NREL) |
GIF |
Co-Chairs: K. Kondo and A.A. Gewirth
| Time | Abs# | Title | View |
|---|
| 2:00 | 354 |
Investigating the Microstructure-Reliability Relationship in Copper Damascene Lines - D. Dornisch (Conexant Systems), D.P. Field (TexSEM Laboratories), and H.(J.H. Tong (Conexant Systems) |
PDF |
| 2:15 | 355 |
Electrochemical Deposition of Copper on Tungsten- and Tantalum-Based Liners - S. Grunow, K. Kumar (The University at Albany), M. Shaw (Rensselaer Polytechnic Institute), D. Diatezua, E. Eisenbraun, T. Stoner (The University at Albany), D. D
uquette (Rensselaer Polytechnic Institute), and A. Kaloyeros (The University at Albany) |
PDF |
| 2:30 | 356 |
A Study of Electrochemically Deposited Copper on PVD Copper and TiN using a Cu-EDTA Complexed Bath - L. Graham (Semitool, Inc.), C. Steinbruchel, and D. Duquette (Rensselaer Polytechnic Institute) |
PDF |
| 2:45 | 357 |
Analysis of Copper Plating Baths - New Developments - B. Newton and E. Kaiser (Dionex Corporation) |
PDF |
| 3:00 | |
Thirty-Minute Intermission |
|
| 3:30 | 358 |
Role of Damascene Via Filling Additives Morphology Evolution - K. Kondo, N. Yamakawa, and K. Hayashi (University of Okayama) |
GIF |
| 3:45 | 359 |
Copper Electrodeposition for on-Chip Interconnections: the Role of Different Additives - P.L. Cavallotti, R. Vallauri, and A. Vicenzo (Politecnico di Milano) |
PDF |
| 4:00 | 360 |
Monitoring of SPS-Based Additives in Cu Plating - J. Horkans and J. Dukovic (IBM Research) |
PDF |
| 4:15 | 361 |
Analysis of Shape Evolution of Cu Electrodeposits in Additive-Containing Solutions - A. Gewirth, T.Y. Leung, M. Kang, and M.E. Biggin (University of Illinois at Urbana-Champaign) |
PDF |
| 4:30 | 362 |
Trends in Properties of Electroplated Cu with Plating Conditions and Chemistry - J. Horkans, C. Cabral, Jr., K.P. Rodbell (IBM Research), C. Parks, M.A. Gribelyuk (IBM Microelectronics Division), and P.C. Andricacos (IBM Research) |
PDF |
| 4:45 | 363 |
Copper Electroplating for Damascene Interconnections of 5:1AR, 0.18mm Trench/Via by An Effective Leveling Agent - K.-C. Lin, S.-J. Chang, S.-Y. Chiu, C.-F. Chen, M.-S. Feng (National Chiao Tung University), J.-M. Shieh, and B.-T. Dai (Natio
nal Nano Device Laboratories) |
PDF |
Co-Chairs: P.C. Andricacos and L.D. Burke
| Time | Abs# | Title | View |
|---|
| 8:45 | 364 |
The Interactions Between PVD Copper and ECD Copper as Observed in the Self-Annealing Process - B. Baker, M. Herrick, D. Pena, S. Rose (Motorola - SPS), S. Guggilla, S. Subrahmanyan, S. Rengarajan, I. Hashim, R. Cheung, T. Freeman, and J. Ro
berts (Applied Materials) |
PDF |
| 9:00 | 365 |
Contact Resistance in Copper Plating of Wafers - Analysis and Design Criteria - Y. Dordi (Applied Materials, Inc.), U. Landau (Case Western Reserve University), J. Lakshmikanthan, J. Stevens, P. Hey (Applied Materials, Inc.), and A. Lipin (
L-Chem, Inc.) |
PDF |
| 9:15 | 366 |
Shape Evolution of Copper Electrodeposition in Multi-Feature Geometries: Numerical and Experimental Investigation - M. Georgiadou (University of Illinois at Urbana-Champaign), D. Papapanayiotou (Cutek Research, Inc.), D. Veyret (University
of Provence), R. Sani (University of Colorado), and R. Alkire (University of Illinois at Urbana-Champaign) |
PDF |
| 9:30 | 367 |
Electroless Copper Deposition on a Hydrogen Terminated Si(111) Surface Studied by ATR-FTIR and XPS Measurements - S. Ye, T. Ichihara, and K. Uosaki (Hokkaido University) |
PDF |
| 9:45 | 368 |
A Model of Superfilling in Damascene Electroplating: Comparison of Feature Filling with Model Prediction - H. Deligianni, J. Horkans, K. Kwietniak, J. Dukovic, P. Andricacos (IBM Research), S. Boettcher, S.-C. Seo, P. Locke, A. Simon, S. Se
ymour, and S. Malhotra (IBM Microelectronics) |
PDF |
| 10:00 | 369 |
Feature Scale Simulation of Copper Deposition for IC Interconnection - B.-H. Wu, Y.-Y. Wang, and C.-C. Wan (Tsing-hua University) |
PDF |
| 10:15 | |
Twenty-Minute Intermission |
|
| 10:30 | 370 |
The Active State of Copper - L.D. Burke, J.A. Collins, M.A. Murphy, and A.M. O'Connell (University College Cork) |
GIF |
| 10:45 | 371 |
The Effects of Process Conditions on the Residual Stress of Electroless Nickel Films for MEMS - S.H. Yi, F.J.V. Preissig (University of Hawaii at Manoa), and E.S. Kim (University of Southern California) |
PDF |
| 11:00 | 372 |
Electroless Plating for Piezoengineering and Integrated Circuit Fabrication - T.N. Khoperia (Georgian Academy of Sciences) |
PDF |
| 11:15 | 373 |
Electrical Characterization of Metal Contaminated MOS-Capacitors - K. Yi, R. Andrzej, G. Rozgonyi, K. Sergei (North Carolina State University), and K. Sergei (SEH-America) |
GIF |
| 11:30 | 374 |
Novel Porous Silicon Technology Using Internal Current Generation - A. Splinter, J. Sturmann, and W. Benecke (University of Bremen) |
GIF
|
| 11:45 | 375 |
Selfaligned Si Wet Etch Process for High Aspect Ratio DRAM Storage Capacitor Surface Enhancement - S. Kudelka and A. Michaelis (Infineon Technologies - Hopewell Jct.,NY) |
PDF |
| 12:00 | 376 |
Fluoroalkylsilane-Passivated Si(111):H (1x1) Surface Studied by Attenuated Total Reflection Fourier Transform Infrared Spectroscopy - J.-H. Ye, J. Li (Institute of Materials Research and Engineering), T.H. Bok (National University of Singap
ore), and S.F.Y. Li (Institute of Materials Research and Engineering) |
PDF |
Co-Chairs: K. Osseo-Asare and J.L. Stickney
| Time | Abs# | Title | View |
|---|
| 2:00 | 377 |
Kinetics of Copper Dissolution in Simulated CMP Aqueous Media - A. Al-Hinai and K. Osseo-Asare (Pennsylvania State University) |
PDF |
| 2:15 | 378 |
Acoustic Methods for Characterization of CMP Slurries - J. Valdes (Bell Labs - Lucent Technologies), M. Carasso (IBM), C. White, and S. Patel (Bell Labs - Lucent Technologies) |
PDF |
| 2:30 | 379 |
Novel STI CMP Process Using High Selective Ceria Slurry with Thin Nitride Stopper - J.-Y. Kim, J.-H. Park, B.U. Yoon, S.R. Hah, J.T. Moon, and S.I. Lee (Samsung) |
PDF |
| 2:45 | 380 |
Oxidation and Dissolution Characteristics of Tungsten: Application to Chemical Mechanical Polishing - M. Anik and K. Osseo-Asare (The Pennsylvania State University) |
PDF |
| 3:00 | |
Thirty-Minute Intermission |
|
| 3:30 | 381 |
Characterization of Abrasives for Chemical-Mechanical Polishing of Copper Thin Films - S.-Y. Chiu (National Chiao Tung University), J.-W. Hsu (National Tsing Hua University), I.-C. Tung (National Chiao Tung University), Y.-L. Wang (Taiwan S
emiconductor Manufacturing Company), B.-T. Dai, M.-S. Tsai (National Nano Device Laboratories), H.-C. Shih (National Tsing Hua University), and M.-S. Feng (National Chiao Tung University) |
PDF |
| 3:45 | 382 |
Low Cost Post Tungsten CMP Treatment - B.-T. Lin (WMSC) |
PDF |
| 4:00 | 383 |
An Electrochemical Investigation of Ta Removal During Cu CMP - H. Jyh-Wei (National Tsing Hua University,), C. Shao-Yu (National Chiao Tung University,), D. Bau-Tong, T. Ming-Shih (National Nano Device Laboratories,), F. Ming-Shiann (Nation
al Chiao Tung University,), and S. Han-C (National Tsing Hua University,) |
PDF |
| 4:15 | 384 |
Study of Anodic Dissolution of Brass into Concentrated Phosphoric Acid by Ellipsometry - S. Zhang, H. Ye, Y. Yang (Chongqing University), Z. Huang, and Z. Huang (Beijing University of Aeronautics and Astronautics) |
GIF |
| 4:30 | 385 |
The Influence of the Silicon Surface Structure on Copper Electrodeposition - C. Ji, G. Oksam, and P.C. Searson (The John Hopkins University) |
GIF |
| Time | Abs# | Title | View |
|---|
| o | 386 |
Study on Cu Plating Seed Layer Formation From CVD Amorphous-Si Contact Displacement - Y.-P. Lee (National Chaio Tung University), M.-S. Tsai (National Nano Device Laboratories), M.-S. Feng, S.-Y. Chiu (National Chaio Tung University), and B
.-T. Dai (National Nano Device Laboratories) |
PDF |
| o | 387 |
4H-SiC Schottky Diodes Made by High-Vacuum Deposition - J. Zhang, W. Harrell, and K. Poole (Clemson University) |
PDF |
| o | 388 |
Investigation of Leveling Effect on Electrodeposited Cu Films for ULSI Applications - J.C. Hu (National Tsing Hua University), T.C. Chang (National Sun Yat-Sen University), L.J. Chen (National Tsing Hua University), M.S. Yeh, C.S. Hsiung, W
.Y. Hsieh, W. Lur, and T.R. Yew (United Microelectronics Crops.) |
PDF |
| o | 389 |
Improved Texture of Copper Films on Tantalum Nitride - C.W. Wu, L.J. Chen (National Tsing Hua University), C.S. Hsiung, W.Y. Hsies, and W. Lur (United Microelectronic Corp.) |
PDF |
| o | 390 |
Fabrication of Pd/InP High-Sensitivity Hydrogen Sensor by Electroless Deposition - H.-I. Chen, Y.Y. Chen, and C.Y. Chu (National Cheng Kung University) |
PDF |