197th Meeting - Toronto, Ontario, Canada

May 14-18, 2000


G1 - Compound Semiconductor Power Transistors II

Electronics Division

Monday, May 15, 2000

Elgin Room, 2nd Floor

Co-Chairs: A.G. Baca and R.F. Kopf

10:00391 Challenges Facing GaN-Based Electronic Devices - G.D. Via, A. Crespo, G. DeSalvo, T. Jenkins, J. King, and J. Sewell (Air Force Research Laboratory) PDF
10:30392 Wide Bandgap Bipolar Microwave Power Transistors: Status and Issues - J. Zolper (Office of Naval Research) PDF
11:00393 GaN FET Technology for Microwave High Power and Robust Low-Noise Amplifiers - C. Nguyen, M. Micovic, N. Nguyen, D. Wong, P. Hashimoto, and P. Janke (HRL Laboratories, LLC) PDF
11:30394 AlGaN/GaN Heterojunction Bipolar Transistor: Limiting Factors and Optimum Design for High Frequency Performances - C. Monier (University of Florida), A.G. Baca (Sandia National Laboratories), S.J. Pearton, F. Ren (University of Florida), P.C. Chang, L. Zhang (Sandia National Laboratories), J.R. LaRoche (University of Florida), J. Han, and R.J. Shul (Sandia National Laboratories) PDF

Co-Chairs: C. Bozada and P.C. Chang

2:00395 Recent Advances in High Efficiency pHEMT Devices and Power Amplifiers - D. Teeter, C. Whelan, A. Platzker, S. Bouthillette, S. Nash, G. Chu, B. Hoke, P. Marsh, and T. Kazior (Raytheon RF Components) PDF
2:30396 Device Technologies for Future Mobile Wireless Applicaitons - H.-S. Tsai (Lucent Technologies) PDF
3:00 Twenty-Minute Intermission
3:30397 Low Cost MHEMT MMIC Technology for High Gain, High Efficiency Power Applications - P.C. Chao (Sanders) PDF
4:00398 InP Heterojunction Bipolar Transistor (HBT) Technology for Power Applications - K. Kobayashi, A. Gutierrez-Aitken, A. Oki, and D. Streit (TRW) PDF

Tuesday, May 16, 2000

Co-Chairs: F.F. Ren and S.N.G. Chu

8:30399 Electrical and Optical Characterisation of High Voltage SiC Diodes - A. Hallen, U. Zimmermann, J. Osterman, A. Galeckas, J. Linnros, and B. Breitholtz (Royal Institute of Technology) PDF
9:00400 Formation and Thermal Stability of Ni/WSi/Ti/Pt Composite Ohmic Contacts to n-SiC for High Power Device Applications - M.W. Cole, P.C. Joshi, C.W. Hubbard, D.J. Demaree, M. Wood, M. Ervin (US Army Research Laboratory), and F. Ren (University of Florida) PDF
9:30 Thirty-Minute Intermission
10:00401 Ga2O3(Gd2O3)/GaN and SiO2/GaN MOS Diodes and MOSFETs - M. Hong, H.M. Ng, A.R. Kortan, J.N. Baillargeon, J. Kwo, S.N.G. Chu, J.P. Mannaerts, A.Y. Cho (Bell Labs, Lucent Technologies), F. Ren (Univ. of Florida), and J.I. Chyi (National Central University) PDF
10:30402 Enhancement-Mode Power AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors - Y. Tkachenko, C. Wei, Y. Zhao, A. Klimashov, and D. Bartle (Alpha Industries. Inc) PDF
11:00403 High Voltage Heterojunction Bipolar Transistors - T. Hussain, M. Sokolich, M. Montes (HRL Laboratories, LLC), and M. Brand (Raytheon Systems Company) PDF
11:30404 DC and Microwave Characteristics of 100 V GaAs/AlGaAs HBTs - A. Baca, P.C. Chang, J. Klem, C. Ashby, and D. Martin (Sandia National Laboratories) PDF