Co-Chairs: A.G. Baca and R.F. Kopf
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 391 | Challenges Facing GaN-Based Electronic Devices - G.D. Via, A. Crespo, G. DeSalvo, T. Jenkins, J. King, and J. Sewell (Air Force Research Laboratory) | |
| 10:30 | 392 | Wide Bandgap Bipolar Microwave Power Transistors: Status and Issues - J. Zolper (Office of Naval Research) | |
| 11:00 | 393 | GaN FET Technology for Microwave High Power and Robust Low-Noise Amplifiers - C. Nguyen, M. Micovic, N. Nguyen, D. Wong, P. Hashimoto, and P. Janke (HRL Laboratories, LLC) | |
| 11:30 | 394 | AlGaN/GaN Heterojunction Bipolar Transistor: Limiting Factors and Optimum Design for High Frequency Performances - C. Monier (University of Florida), A.G. Baca (Sandia National Laboratories), S.J. Pearton, F. Ren (University of Florida), P.C. Chang, L. Zhang (Sandia National Laboratories), J.R. LaRoche (University of Florida), J. Han, and R.J. Shul (Sandia National Laboratories) |
Co-Chairs: C. Bozada and P.C. Chang
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 395 | Recent Advances in High Efficiency pHEMT Devices and Power Amplifiers - D. Teeter, C. Whelan, A. Platzker, S. Bouthillette, S. Nash, G. Chu, B. Hoke, P. Marsh, and T. Kazior (Raytheon RF Components) | |
| 2:30 | 396 | Device Technologies for Future Mobile Wireless Applicaitons - H.-S. Tsai (Lucent Technologies) | |
| 3:00 | Twenty-Minute Intermission | ||
| 3:30 | 397 | Low Cost MHEMT MMIC Technology for High Gain, High Efficiency Power Applications - P.C. Chao (Sanders) | |
| 4:00 | 398 | InP Heterojunction Bipolar Transistor (HBT) Technology for Power Applications - K. Kobayashi, A. Gutierrez-Aitken, A. Oki, and D. Streit (TRW) |
Co-Chairs: F.F. Ren and S.N.G. Chu
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:30 | 399 | Electrical and Optical Characterisation of High Voltage SiC Diodes - A. Hallen, U. Zimmermann, J. Osterman, A. Galeckas, J. Linnros, and B. Breitholtz (Royal Institute of Technology) | |
| 9:00 | 400 | Formation and Thermal Stability of Ni/WSi/Ti/Pt Composite Ohmic Contacts to n-SiC for High Power Device Applications - M.W. Cole, P.C. Joshi, C.W. Hubbard, D.J. Demaree, M. Wood, M. Ervin (US Army Research Laboratory), and F. Ren (University of Florida) | |
| 9:30 | Thirty-Minute Intermission | ||
| 10:00 | 401 | Ga2O3(Gd2O3)/GaN and SiO2/GaN MOS Diodes and MOSFETs - M. Hong, H.M. Ng, A.R. Kortan, J.N. Baillargeon, J. Kwo, S.N.G. Chu, J.P. Mannaerts, A.Y. Cho (Bell Labs, Lucent Technologies), F. Ren (Univ. of Florida), and J.I. Chyi (National Central University) | |
| 10:30 | 402 | Enhancement-Mode Power AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistors - Y. Tkachenko, C. Wei, Y. Zhao, A. Klimashov, and D. Bartle (Alpha Industries. Inc) | |
| 11:00 | 403 | High Voltage Heterojunction Bipolar Transistors - T. Hussain, M. Sokolich, M. Montes (HRL Laboratories, LLC), and M. Brand (Raytheon Systems Company) | |
| 11:30 | 404 | DC and Microwave Characteristics of 100 V GaAs/AlGaAs HBTs - A. Baca, P.C. Chang, J. Klem, C. Ashby, and D. Martin (Sandia National Laboratories) |