Co-Chairs: G.K. Celler and A.J. Steckl
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 405 | Silicon Wafers for The Mesoscopic Era - H.R. Huff (SEMATECH, Inc.) | |
| 2:30 | 406 | Silicon Crystal Growth at the Beginning of the 21st Century - W. v.Ammon (Wacker Siltronic AG) | |
| 3:00 | Thirty-Minute Intermission | ||
| 3:30 | 407 | Silicon:Germanium, a Material of the Future Goes Mainstream - B. Meyerson (IBM T.J. Watson Research Center) | |
| 4:00 | 408 | GeSi Single Crystals as Thermo-Electric Materials - I. Yonenaga (Tohoku University) | GIF |
| 4:30 | 409 | A Realistic Way of Future Silicon Solar Cells - T. Abe (Shin-Etsu Handotai) | GIF |
Co-Chairs: H.R. Huff and T. Abe
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:30 | 410 | Future Prospects For Heterostructure Device Wafer Manufacturing - J. Fan (Kopin Corporation) | |
| 9:00 | 411 | Prospects for SiC Technology in the 21st Century - C.H. Carter, V.F. Tsvetkov, D. Hobgood, R.C. Glass, D. Henshall, S.G. Muller, M. Brady, J.A. Edmond, A. Agarwal, R. Singh, S. Allen, and J.W. Palmour (Cree, Inc.) | GIF |
| 9:30 | Thirty-Minute Intermission | ||
| 10:00 | 412 | Photonic Materials for the 21st Century - A. Glass (Bell Labs, Lucent Technologies) | |
| 10:30 | 413 | GaN-Based Light Emitting Devices - M. Koike (Toyoda Gosei Co. Ltd.) | |
| 11:00 | 414 | Rare Earth Doped Gallium Nitride - A New Approach to the Pursuit of Light - A. Steckl (University of Cincinnati) | |
| 11:30 | 415 | Silicon Microphotonics for Future ULSI Applications - K. Wada, A. Agarwal, D. Lim, K. Chen, K. Lee, H. Luan, T. Chen, N. Toyoda, J. Foresi, and L. Kimerling (Massachusetts Institute of Technology) |
Co-Chairs: C.L. Claeys and S.P. Murarka
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 416 | On Chip Interconnection Materials Needs - Present and Future - S.P. Murarka (Rensselaer Polytechnic Institute) | |
| 2:30 | 417 | Alternative Gate Oxides for Sub-100nm Silicon Devices: Progress and Paradigm Shifts - A. Kingon and J.-P. Maria (North Carolina State University,) | |
| 3:00 | Thirty-Minute Intermission | ||
| 3:30 | 418 | Silicon-on-Insulator - Materials, Devices, and Future Prospects - G. Celler (Bell Laboratories, Lucent Technologies) | |
| 4:00 | 419 | Ultradeep Trench Arrays in Silicon as a Base for High-Value MOS Capacitors - F. Roozeboom, R. Elfrink, J. Verhoeven, and J. van den Meerakker (Philips Research) |