Co-Chairs: R.F. Kopf and D.N. Buckley
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 420 | Reliable AlGaAs/GaAs and GaInP/GaAs Power HBTs for X-Band Applications - K.J. Riepe, H. Blanck, W. Doser, P. Auxemery, and D. Pons (United Monolithic Semiconductors GmbH) | |
| 2:30 | 421 | 100 mm Diameter AlGaN and GaN Films Grown on Si(111) Substrates - H.M. Liaw, P. Fejes (Motorola Inc.), R. Venugopal, J. Wan (Purdue University), G.L. Martinez, B.J. Skromme (Arizona State University), and M.R. Melloch (Purdue University) | |
| 2:45 | 422 | Raman Scattering from Vapor Phase Epitaxial Growth of SiC on Porous 6H-SiC - J. Spanier (Columbia University), G. Dunne, L. Rowland (Sterling Semiconductor, Inc.), and I. Herman (Columbia University) | |
| 3:00 | Thirty-Minute Intermission | ||
| 3:30 | 423 | Novel High-Voltage GaAs-Based FETs for Microwave High-Power Applications - M. Kuzuhara, Y. Mochizuki, Y. Nashimoto, and M. Mizuta (NEC Corporation) | |
| 4:00 | 424 | Selective RIE in BCl3/SF6 Plasmas for GaAs HEMT Gate Recess Etching - Y.-S. Lee, K. Upadhyaya, and K. Nordheden (University of Kansas) | |
| 4:15 | 425 | MOCVD Growth of Indium Nitride - K.-H. Chen, J.S. Huang (Academia Sinica), F.S. Yang, Y.J. Yang, and L.C. Chen (National Taiwan University) | |
| 4:30 | 426 | MBE Growth of Group III-Nitrides-Arsenides for Long Wavelength Opto-Electronic Devices on GaAs Substrates - S.G. Spruytte, C.W. Coldren (Solid State and Photonics Lab, Stanford University), A.F. Marshall (Center for Materials Research, Stan ford University), M.C. Larson (Lawrence Livermore National Laboratory), and J.S. Harris (Solid State and Photonics Lab, Stanford University) | |
| 4:45 | 427 | AlxGa1-xN-Based UV Photodetectors and Waveguides - F. Omnes (CRHEA CNRS), E. Monroy (Universidad Politecnica de Madrid), B. Beaumont (CRHEA CNRS), E.-H. Dogheche (LAMAC - Universite de Valenciennes et du Hainaut-Cambra isis), F. Calle, E. Munoz (Universidad Politecnica de Madrid), and P. Gibart (CRHEA CNRS) | GIF |
| 5:15 | 428 | GaNP/GaP: A Novel Material System for Light-Emitting Diodes - C.W. Tu, H.P. Xin, and R.J. Welty (University of California, San Diego) | |
| 5:45 | 429 | A New InP/InGaAlAs Multiple-Negative-Differential-Resistance (MNDR) Switching Device - W.-C. Wang, W.-C. Liu, H.-J. Pan, C.-C. Cheng, S.-C. Feng, and C.-H. Yen (National Cheng-Kung University) |
Co-Chairs: K.-H. Chen and J.-P. Vilcot
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 430 | In situ Observation of Ellipsometry Monolayer Oscillations During Metalorganic Vapor-Phase Epitaxy - J.-S. Lee and Y. Masumoto (JST) | GIF |
| 10:30 | 431 | Ultra-low Resistance Contacts to GaAs/AlGaAs Quantized Hall Resistors - K. Lee (National Institute of Standards and Technology) | |
| 10:45 | 432 | ELECTRONICS DIVISION AWARD ADDRESS-Zinc Incorporation And Diffusion in InP During Ap-MOCVD Growth - S.N.G. Chu (Bell Laboraratories - Lucent Technologies), R.A. Logan (Lucent Technologies), and M. Geva (Unknown) | |
| 11:15 | 433 | Evaluation of a DHBT Structure Using SIMS - G. Mount, S. Mitha, and P. Van Lierde (Charles Evans & Associates) | |
| 11:30 | 434 | Anodic Behavior of InP in Aqueous (NH4)2S - E. Harvey and N. Buckley (University of Limerick) | |
| 11:45 | 435 | A High-Sensitivity Hydrogen Sensor Based on Pd/InP Schottky Diode Structure - H.-J. Pan, W.-C. Liu, K.-H. Yu, W.-C. Wang, and S.-C. Feng (National Cheng-Kung University) |
Co-Chairs: A.G. Baca and S.N.G. Chu
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 436 | Backside Copper Metallization of GaAs MESFET' s Using Ta or TaN As The Diffusion Barrier - E.Y. Chang, C.Y. Chen, L. Chang, and S.H. Chen (National Chiao Tung University) | |
| 2:30 | 437 | GaAs MOSFET - Achievements and Challenges (Invited) - M. Hong, J.N. Baillargeon, J. Kwo, A.R. Kortan, J.P. Mannaerts, A.Y. Cho, Y.C. Wang (Bell Laboratories, Lucent Technologies), and F. Ren (University of Florida) | |
| 3:00 | Thirty-Minute Intermission | ||
| 3:30 | 438 | Device Characteristics of the PnP AlGaAs/InGaAsN/GaAs Double Heterojunction Bipolar Transistor - P.C. Chang (Sandia National Laboratories), N.Y. Li (Emcore Corporation), J.R. Laroche (University of Florida), A.G. Baca (Sandia National Labor atories), H.Q. Hou (Emcore Corporation), and F. Ren (University of Florida) | |
| 4:00 | 439 | Fabrication of Reduced Area InGaAs/InP HBT and DHBT Devices - Y.-C. Wang, R.F. Kopf, R.A. Hamm, R.W. Ryan, A. Tate, M.A. Melendes, R. Pullela, G. Georgiou, J.-P. Mattia, Y. Baeyens, H.-S. Tsai, and Y.-K. Chen (Bell Laboratories, Lucent Tech nologies) | |
| 4:30 | 440 | Role of Surface Preparation of GaAs on the Regrown AlGaAs/InGaAs PHEMT Structures - S. Balasubramanian, H. Zheng, K. Radhakrishnan, G.I. Ng, and Y.S. Fatt (Nanyang Technological University) | |
| 4:45 | 441 | Reduction of the Base-Collector Capacitance of Heterostructure Bipolar Transistors using Regrowth over a Patterned Subcollector - R. Hamm, C. Pinzone, M. Lee, R. Kopf, R. Ryan, R. Pullela, A. Tate, M. Melendes, and R. Melendes (Lucent Techn ologies/Bell Labs) | |
| 5:15 | 442 | Step-Graded Doped-Channel(SGDC)Field-Effect Transistor - K.-W. Lin, W.-C. Liu, K.-H. Yu, C.-C. Cheng, and K.-B. Thei (National Cheng-Kung University) |