197th Meeting - Toronto, Ontario, Canada

May 14-18, 2000

PROGRAM INFORMATION

G4 - State-of-the-Art Program on Compound Semiconductors XXXII

Electronics Division

Tuesday, May 16, 2000

Elgin Room, 2nd Floor

Co-Chairs: R.F. Kopf and D.N. Buckley

TimeAbs#TitleView
2:00420 Reliable AlGaAs/GaAs and GaInP/GaAs Power HBTs for X-Band Applications - K.J. Riepe, H. Blanck, W. Doser, P. Auxemery, and D. Pons (United Monolithic Semiconductors GmbH) PDF
2:30421 100 mm Diameter AlGaN and GaN Films Grown on Si(111) Substrates - H.M. Liaw, P. Fejes (Motorola Inc.), R. Venugopal, J. Wan (Purdue University), G.L. Martinez, B.J. Skromme (Arizona State University), and M.R. Melloch (Purdue University) PDF
2:45422 Raman Scattering from Vapor Phase Epitaxial Growth of SiC on Porous 6H-SiC - J. Spanier (Columbia University), G. Dunne, L. Rowland (Sterling Semiconductor, Inc.), and I. Herman (Columbia University) PDF
3:00 Thirty-Minute Intermission
3:30423 Novel High-Voltage GaAs-Based FETs for Microwave High-Power Applications - M. Kuzuhara, Y. Mochizuki, Y. Nashimoto, and M. Mizuta (NEC Corporation) PDF
4:00424 Selective RIE in BCl3/SF6 Plasmas for GaAs HEMT Gate Recess Etching - Y.-S. Lee, K. Upadhyaya, and K. Nordheden (University of Kansas) PDF
4:15425 MOCVD Growth of Indium Nitride - K.-H. Chen, J.S. Huang (Academia Sinica), F.S. Yang, Y.J. Yang, and L.C. Chen (National Taiwan University) PDF
4:30426 MBE Growth of Group III-Nitrides-Arsenides for Long Wavelength Opto-Electronic Devices on GaAs Substrates - S.G. Spruytte, C.W. Coldren (Solid State and Photonics Lab, Stanford University), A.F. Marshall (Center for Materials Research, Stan ford University), M.C. Larson (Lawrence Livermore National Laboratory), and J.S. Harris (Solid State and Photonics Lab, Stanford University) PDF
4:45427 AlxGa1-xN-Based UV Photodetectors and Waveguides - F. Omnes (CRHEA CNRS), E. Monroy (Universidad Politecnica de Madrid), B. Beaumont (CRHEA CNRS), E.-H. Dogheche (LAMAC - Universite de Valenciennes et du Hainaut-Cambra isis), F. Calle, E. Munoz (Universidad Politecnica de Madrid), and P. Gibart (CRHEA CNRS) GIF
5:15428 GaNP/GaP: A Novel Material System for Light-Emitting Diodes - C.W. Tu, H.P. Xin, and R.J. Welty (University of California, San Diego) PDF
5:45429 A New InP/InGaAlAs Multiple-Negative-Differential-Resistance (MNDR) Switching Device - W.-C. Wang, W.-C. Liu, H.-J. Pan, C.-C. Cheng, S.-C. Feng, and C.-H. Yen (National Cheng-Kung University) PDF

Wednesday, May 17, 2000

Co-Chairs: K.-H. Chen and J.-P. Vilcot

TimeAbs#TitleView
10:00430 In situ Observation of Ellipsometry Monolayer Oscillations During Metalorganic Vapor-Phase Epitaxy - J.-S. Lee and Y. Masumoto (JST) GIF
10:30431 Ultra-low Resistance Contacts to GaAs/AlGaAs Quantized Hall Resistors - K. Lee (National Institute of Standards and Technology) PDF
10:45432 ELECTRONICS DIVISION AWARD ADDRESS-Zinc Incorporation And Diffusion in InP During Ap-MOCVD Growth - S.N.G. Chu (Bell Laboraratories - Lucent Technologies), R.A. Logan (Lucent Technologies), and M. Geva (Unknown) PDF
11:15433 Evaluation of a DHBT Structure Using SIMS - G. Mount, S. Mitha, and P. Van Lierde (Charles Evans & Associates) PDF
11:30434 Anodic Behavior of InP in Aqueous (NH4)2S - E. Harvey and N. Buckley (University of Limerick) PDF
11:45435 A High-Sensitivity Hydrogen Sensor Based on Pd/InP Schottky Diode Structure - H.-J. Pan, W.-C. Liu, K.-H. Yu, W.-C. Wang, and S.-C. Feng (National Cheng-Kung University) PDF

Co-Chairs: A.G. Baca and S.N.G. Chu

TimeAbs#TitleView
2:00436 Backside Copper Metallization of GaAs MESFET' s Using Ta or TaN As The Diffusion Barrier - E.Y. Chang, C.Y. Chen, L. Chang, and S.H. Chen (National Chiao Tung University) PDF
2:30437 GaAs MOSFET - Achievements and Challenges (Invited) - M. Hong, J.N. Baillargeon, J. Kwo, A.R. Kortan, J.P. Mannaerts, A.Y. Cho, Y.C. Wang (Bell Laboratories, Lucent Technologies), and F. Ren (University of Florida) PDF
3:00 Thirty-Minute Intermission
3:30438 Device Characteristics of the PnP AlGaAs/InGaAsN/GaAs Double Heterojunction Bipolar Transistor - P.C. Chang (Sandia National Laboratories), N.Y. Li (Emcore Corporation), J.R. Laroche (University of Florida), A.G. Baca (Sandia National Labor atories), H.Q. Hou (Emcore Corporation), and F. Ren (University of Florida) PDF
4:00439 Fabrication of Reduced Area InGaAs/InP HBT and DHBT Devices - Y.-C. Wang, R.F. Kopf, R.A. Hamm, R.W. Ryan, A. Tate, M.A. Melendes, R. Pullela, G. Georgiou, J.-P. Mattia, Y. Baeyens, H.-S. Tsai, and Y.-K. Chen (Bell Laboratories, Lucent Tech nologies) PDF
4:30440 Role of Surface Preparation of GaAs on the Regrown AlGaAs/InGaAs PHEMT Structures - S. Balasubramanian, H. Zheng, K. Radhakrishnan, G.I. Ng, and Y.S. Fatt (Nanyang Technological University) PDF
4:45441 Reduction of the Base-Collector Capacitance of Heterostructure Bipolar Transistors using Regrowth over a Patterned Subcollector - R. Hamm, C. Pinzone, M. Lee, R. Kopf, R. Ryan, R. Pullela, A. Tate, M. Melendes, and R. Melendes (Lucent Techn ologies/Bell Labs) PDF
5:15442 Step-Graded Doped-Channel(SGDC)Field-Effect Transistor - K.-W. Lin, W.-C. Liu, K.-H. Yu, C.-C. Cheng, and K.-B. Thei (National Cheng-Kung University) PDF