197th Meeting - Toronto, Ontario, Canada

May 14-18, 2000

PROGRAM INFORMATION

H1 - Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface

Electronics Division/ Dielectric Science and Technology Division

Monday, May 15, 2000

Grand Ballroom Centre, Lower Concourse

Opening Session

Co-Chairs: H.Z. Massoud and E.H. Poindexter

TimeAbs#TitleView
10:00443 Ultra-Thin Gate SiO2 Technology - H. Iwai (Tokyo Institute of Technology), H. Momose (Toshiba Corporation), and S.-I. Ohmi (Tokyo Institute of Technology) PDF
10:40444 Scaling of Gate Dielectrics for Advanced CMOS Applications - T.P. Ma (Yale University) PDF
11:20445 Defect Generation and Reliability of Ultra-Thin SiO2 at Low Voltage - J. Stathis and D.J. DiMaria (IBM T. J. Watson Research Laboratory) PDF

Oxide Technology I

Co-Chairs: I. Baumvol and M. Hirose

TimeAbs#TitleView
2:00446 Deuterium Processing in CMOS Technologies - I. Kizilyalli (Lucent Technologies Bell Laboratories) PDF
2:40447 On the Dynamics of Thermal Growth of Silicon Oxide Films on Si - R.M.C. de Almeida, S. Goncalves, I.J.R. Baumvol, and F.C. Stedile (Universidade Federal do Rio Grande do Sul) PDF
3:00448 Growth Mechanism of SiO2 Ultra-thin Film on Si(100) by Highly Concentrated Ozone Supplied at Low and High Pressure Conditions - S. Ichimura, K. Nakamura, A. Kurokawa, H. Itoh (Electrotechnical Laboratory), and K. Koike (Iwatani I nternational Corporation) PDF
3:20 Twenty-Minute Intermission
3:40449 Electrical Characterization of Thin Oxides Grown on Deuterium Implanted Silicon Substrate - D. Misra and R. Jarwal (New Jersey Institute of Technology) PDF
4:20450 Oxide Surface Roughness During Stepwise Wet Etching of Fowler-Nordheim Stressed Silicon Dioxide Films - K. Yamabe, K. Liao, and M. Murata (University of Tsukuba) PDF
4:40451 Oxidation of Si(001) Surface and Formation of Si/SiO2 Interface - T. Uchiyama, T. Uda, and K. Terakura (Joint Research Center for Atom Technology) PDF

Tuesday, May 16, 2000

Oxide Technology II

Co-Chairs: F. Stedile and H. Iwai

TimeAbs#TitleView
9:00452 Improvement of Gate Oxide Integrity by Preparing Atomic Order Flattened Si (100) Surface - T. Ohkawa, O. Nakamura, and T. Ohmi (Tohoku University) PDF
9:20453 Low-Temperature Formation of Gate-Grade Silicon Oxide Films Using High-Density Krypton Plasma - Y. Saito, K. Sekine, M. Hirayama, and T. Ohmi (Tohoku University) PDF
9:40454 Gate Oxide Thinning in MOS Structures with Shallow Trench Isolation - N. Balasubramanian, E. Johnson, C. Perera, C. Shou Mian, G. Sheng (Institute of Microelectronics), I. Peidous, G. Ping, A. Cuthbertson, and R. Sundaresan (Chartered Semic onductor Manufacturing Ltd) PDF
10:00455 Characterization of Oxynitride Dielectric Films Grown in Nitric Oxide: Oxygen Mixtures by Rapid Thermal Oxynitridation - S. Everist, T. Meisenheimer, G. Nelson, P.M. Smith (Sandia National Laboratories), R. Sharangpani, and S.P. Tay (Steag RTP Systems, Inc.) PDF
10:20 Twenty-Minute Intermission

Nitrogen and Oxynitrides I

Co-Chairs: G. Lucovsky and I. Baumvol

TimeAbs#TitleView
10:40456 Effect of Fermi Level Position of Polysilicon Gate on the Flatband Voltage Shift for Ultrathin Oxide-Nitride Gate Stacks - Z. Wang, D. Hodge, R. Croswell, and J. Hauser (North Carolina State University) PDF
11:00457 Electrical Characterization of Interfacial Reactions in Ti-SiO2-Si MOS Structures during Post Metallization Anneal - L.-A. Ragnarsson, A. Hector, and P. Lundgren (Chalmers University of Technology) GIF
11:20458 A Comparative Study of Defects at Si/Si3N4 and Nitric Oxide Treated Si/SiO2 Interfaces - J.-L. Cantin and H.-J. von Bardeleben (Universites Paris 6& 7, UMR 75-88 au CNRS) PDF
11:40459 Compositional and Electrical Differences of SiO2/SiC and SiO2/Si Structures upon Thermal Annealing in N2O and NO - F.C. Stedile (Instituto de Quimica-UFRGS), C. Radtke, I.J.R. Baumvol (Instituto de Fisica-UF RGS), K. McDonald, M.B. Huang, R.A. Weller, L.C. Feldman (Vanderbilt University), and J.R. Williams (Auburn University) PDF

Nitrogen and Oxynitrides II

Co-Chairs: T. Hattori and J. von Bardeleben

TimeAbs#TitleView
2:00460 Chemical Structures of Oxynitride/Si(100) Interface - K. Takahashi, H. Nohira, H. Kato (Musashi Institute of Technology), N. Tamura, K. Hikazutani, S. Sano (Fujitsu Ltd.), and T. Hattori (Musashi Institute of Technology) PDF
2:20461 Hyperthermal Nitridation for Ultrathin Silicon Oxynitride Gate Dielectrics - C. Krug, F.C. Stedile (Universidade Federal do Rio Grande do Sul), M.L. Green, F. Klemens, P.J. Silverman, T.W. Sorsch (Bell Laboratories/Lucent Technologies), F. Alvarez (Universidade Estadual de Campinas), and I.J.R. Baumvol (Universidade Federal do Rio Grande do Sul) PDF
2:40462 Nitrogen Implantation Effects on Ultra-Thin Gate Oxide Grown on Nitrogen Implanted Silicon - I.H. Nam, S.I. Hong, J.S. Sim, B.G. Park, J.D. Lee (Seoul National University), S.W. Lee, M.S. Kang, Y.W. Kim, and K.P. Suh (Samsung Electronics Co .) PDF
3:00463 Characterization of Ultrathin Oxide Interfaces (Tox<1nm) in Oxide-Nitride Stack Formed by Remote Plasma Enhanced Chemical Vapor Deposition - Z. Wang, S. Wang, W. Li, C. Young, R. Croswell, and J. Hauser (North Carolina State University) PDF
3:20 Twenty-Minute Intermission

Silica and Hydrogen

Co-Chairs: E.H. Poindexter and H.Z. Massoud

TimeAbs#TitleView
3:40464 Silica: A Geochemist's Perspective - D. Rimstidt (Virginia Polytechnic Institute and State University) PDF
4:20465 Hydrogen in Confined (Buried) SiO2 Layers - A.G. Revesz (Revesz Associates), R.E. Stahlbush, and H.L. Hughes (Naval Reserach Laboratory) PDF
4:40466 Epitaxially Ordered Structure in the Buried Oxide Layer of SIMOX Wafers - T. Shimura, T. Hosoi, and M. Umeno (Osaka University) PDF
5:00467 Theoretical Study of Oxygen Radicals Impacting Hydrogen-Terminated Silicon Surfaces - A. Tachibana (Kyoto University) PDF

Wednesday, May 17, 2000

Modeling and Simulators

Co-Chairs: A. Pasquarello and H.Z. Massoud

TimeAbs#TitleView
10:00468 Ab-inito Approach on Defect Dynamics in SiO2 Induced by Electronic Excitations - Y. Miyamoto and A. Yokozawa (NEC Corporation) PDF
10:40469 Characterization of a Model Interface between Silicon and Disordered SiO2 - A. Pasquarello (EPFL) and M.S. Hybertsen (Bell Laboratories, Lucent Technologies) PDF
11:00470 Atomic Structure and Hyperfine Spectrum of Pb-Type Defects at Si(001)-SiO2 Interfaces: A First-Principles Investigation - A. Stirling (Institute of Isotope and Surface Chemistry), A. Pasquarello (IRRMA, EPFL), J.-C. Ch arlier (Universite Catholique de Louvain), and R. Car (Princeton University) PDF
11:20471 Electronic Structures of SiO2/Si(001) Interfaces - T. Yamasaki, C. Kaneta (Fujitsu Laboratories Limited), T. Uchiyama, T. Uda, and K. Terakura (JCAT) PDF
11:40472 Incorporation and Electronic States of Carbon Atom in SiO2 as Examined through Calculations from First-Principles - T. Maruizumi and J. Ushio (Hitachi, Ltd.) PDF
12:00473 Large-Scale Modeling of SiO2/Si(001) Interface Structures by Using a Novel Inter-Atomic Interaction Model - T. Watanabe and I. Ohdomari (Waseda University) GIF

Reliability I

Co-Chairs: M. Hirose and J. Stathis

TimeAbs#TitleView
2:00474 Soft and Hard Breakdown of Ultrathin SiO2 Gate Oxides - J. Sune (Universitat Autonoma de Barcelona) and E. Miranda (Universidad de Buenos Aires) PDF
2:40475 The Origin and the Creation Mechanism of Positive Charges in Silicon Oxide Films - K. Ohmori, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda (Nagoya University) PDF
3:00476 A New Methodology for a Statistical Evaluation of SILC: Characterization of Stress Conditions and Oxide Technology - G. Ghidini (STMicroelectronics), M. Rigamonti (DEI), D. Brazzelli, F. Pellizzer, A. Martinelli, and N. Galbiati (STMicroele ctronics) PDF
3:20 Twenty-Minute Intermission
3:40477 Physics and Prospects of Sub 2nm Oxides - M.A. Alam, B. Weir, P. Silverman, J. Bude, G. Timp, and A. Ghetti (Bell Laboratories - Lucent Technologies) PDF
4:20478 Reliability of Gate Oxides on Silicon Substrates with 5 - 10nm Oxide Thickness - A. Huber, J. Grabmeier, U. Lambert, and R. Wahlich (Wacker Siltronic AG) PDF
4:40479 Degradation of Gate Oxide Integrity due to Ni and Cu Contamination and Impurity Gettering in Epitaxial Si Wafers - S. Koveshnikov, D. Beauchaine, and Z. Radzimski (SEH America, Inc.) PDF

Thursday, May 18, 2000

Reliability II

Co-Chairs: J. Sune and M. Alam

TimeAbs#TitleView
9:00480 Study of Soft Breakdown in Thin SiO2 Films by Carrier-Separation Technique and Breakdown-Transient Modulation - A. Toriumi, S.-I. Takagi, and H. Satake (Toshiba Corporation) PDF
9:40481 Soft Breakdown Mechanism in Ultrathin Gate Oxides - W. Mizubayashi, H. Murakami, S. Miyazaki, and M. Hirose (Hiroshima University) PDF
10:00482 Native and Stress-Induced Traps in SiO2 Films - A. Ghetti, M.A. Alam, J. Bude (Bell Laboratories, Lucent Technologies), E. Sangiorgi (University of Udine), G. Timp, and G. Weber (Bell Laboratories, Lucent Technologies) PDF
10:20 Twenty-Minute Intermission

Oxide Characterization

Co-Chairs: H.Z. Massoud and E.H. Poindexter

TimeAbs#TitleView
10:40483 The Conductance Technique: a Method to Separate and Characterise Interface States - M. Uren (Defence Evaluation and Research Agency (DERA)) PDF
11:20484 Extending Standard Methods of Characterization to Very Thin Oxides - A. Balasinski and K. Ramkumar (Cypress Semiconductor) PDF
11:40485 Strained Si Layers at Dielectric/Si(100) Interface Probed by X-Ray Photoelectron Spectroscopy - Z.-H. Lu (University of Toronto) and Y. Ma (Bell Labs, Lucent Technologies) PDF
12:00486 Pulsed ESR Characterization of SiO2 Thin Layers on Si - J. Isoya, S. Yamasaki, K. Tanaka (National Institute for Advanced Interdisciplinary Research), Y. Kamigaki, T. Kobayashi (Hitachi Ltd.), Y. Morita, and N. Morishita (Japan A tomic Energy Research Institute) PDF

Alternative Dielectrics

Co-Chairs: G. Lucovsky and R. Wallace

TimeAbs#TitleView
2:00487 High-K Gate Dielectrics for Scaled CMOS - G. Wilk (Bell Laboratories - Lucent Technologies) and R. Wallace (University of North Texas) PDF
2:40488 Physical Characterization of Ultrathin Films of High Dielectric Constant Materials on Silicon - E. Gusev, M. Copel, D. Buchanan, E. Cartier, H. Okorn-Schmidt (IBM T.J. Watson Research Center), M. Gribelyuk, D. Falcon, S. Molis (IBM Analytic al Services), I. Baumvol, and C. Krug (Instituto de Fasica, UFRGS) PDF
3:00489 Electrical Performance of Stacked High-K Gate Dielectrics: Remote Plasma Cvd Ta2o5 and (Ta2o5)X(Sio2)1-X Alloys with Ultra-Thin Plasma Processed Sio2 Interface Layers - H. Niimi, R.S. Johnson, G. Lucovsky (North Carolina State University), and H.Z. Massoud (Duke University) PDF
3:20 Twenty-Minute Intermission
3:40490 Electrical Performance of MOS Devices with Plasma Deposited ZrO2-SiO2 Pseudo-Binary Silicate Alloys - R. Therrien, B. Rayner, and G. Lucovsky (North Carolina State University) PDF
4:00491 Characterization of Bulk and Interface Properties of Dielectric Layers and Stacks - H. Okorn-Schmidt, E. Gusev, D. Buchanan, E. Cartier, S. Guha, N. Bojarczuk, A. Callegari, D. Rath, M. Gribelyuk, and M. Copel (IBM T.J. Watson Research Cent er) PDF
4:20492 Light Emission from Interface Traps in SiC MOSFETs - R.E. Stahlbush and G.G. Jernigan (Naval Research Laboratory) PDF
4:40493 Effects of Re-Oxidation on the Electrical Properties of Wet Oxide Grown on C-Face of 4H-SiC - R.K. Chanana (Vanderbilt University) and M.E. Zvanut (University of Alabama at Birmingham) GIF