Co-Chairs: M.D. Allendorf and F. Teyssandier
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | Opening Remarks | ||
| 10:10 | 842 | Atomistic Modeling of Chemical Vapor Deposition: NO on the Si (001) (2x1) Reconstructed Surface - N. Tanpipat, J. Andzelm (Molecular Simulations Inc.), B. Delley (Paul Scherrer Institut), A. Korkin, and A. Demkov (Motorola, Inc.) | |
| 10:40 | 843 | Simulation of Surface Diffusion of Silicon and Hydrogen on Single Crystal Silicon Surfaces - S. Goel, B. Khomami, and R. Lovett (Washington University,St. Louis) | |
| 11:00 | 844 | Activation Energy Study for the Nucleation and Growth Stages of Cu(TMVS)(hfac) Sourced Copper CVD - D. Yang, J. Hong, and T.S. Cale (Rensselaer Polytechnic Institute) | |
| 11:20 | 845 | Development of Gas Phase and Surface Kinetic Schemes for The MOCVD of CdTe, ZnS and ZnSe - C. Cavallotti, V. Bertani, M. Masi, and S. Carra (Politecnico di Milano) | |
| 11:40 | 846 | Estimation of Reactive Sticking Coefficient of Radical Using Two Species Model and Evaluation of its Influences in Silane Reduced Pressure CVD - D.-S. Tsai, T.-C. Chang (National Taiwan University of Science and Technology), H. Hamamura, an d Y. Shimogaki (University of Tokyo) |
Co-Chairs: F. Teyssandier and M.D. Allendorf
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 847 | A Combined Experimental and Theoretical Investigation of the Surface Reactions in Plasma Deposition of Hydrogenated Amorphous Silicon Films - E. Aydil, D. Maroudas, D. Marra, S. Ramalingam, S. Sriraman (University of California Santa Barbar a), W.M.M. Kessels, and R. Van de Sanden (Eindhoven University of Technology) | |
| 2:30 | 848 | Determination of Energy Transfer Effects for Molecular Decomposition - W. Tsang and V. Mokrushin (National Institute of Standards and Technology) | |
| 2:50 | 849 | SiH4 Reaction Mechanism Research Using A Fast Wafer-Rotating Reactor - Y. Sato, N. Tamaoki, and T. Ohmine (Toshiba Corp.) | |
| 3:15 | Fifteen-Minute Intermission | ||
| 3:30 | 850 | Measurement of the Kinetics of the High Temperature Oxidation of TiCl4 - R. Raghavan, D. Lee, D. Conrad, and P. Morrison (Case Western Reserve University) | |
| 3:50 | 851 | Aspects of Gas Phase Chemistry During Chemical Vapor Deposition of Ti-Si-N Thin Films with Ti(NMe2)4 (TDMAT), NH3, and SiH4 - C. Amato-Wierda, E. Norton, Jr (University of New Hampshire), and D. W ierda (Saint Anselm College) | |
| 4:10 | 852 | Influence of Carbon Precursor on the Gas-Phase Chemistry of the Ti-C-Cl-H System - S. de Persis, F. Teyssandier (Institut de Science et de Genie des Materiaux et Procedes), A. McDaniel, and M. Allendorf (Sandia National Laboratories) | |
| 4:30 | 853 | A Two-Dimensional Simulation Model for Oxy-Acetylene Flame CVD of Diamond Films - M.(R. Okkerse, C. Kleijn, H. VandenAkker (Delft University of Technology), M. DeCroon (Eindhoven University of Technology), and G. Marin (University of Ghent) |
Co-Chairs: D. Goodwin and M.D. Allendorf
| Time | Abs# | Title | View |
|---|---|---|---|
| 4:50 | 854 | Nanostructures by CVD Assisted Methods Using Mineral Precursors - P. Doppelt, R. Even (ESPCI-CNRS), F. Marchi, V. Bouchiat, H. Dallaporta, S. Safarov, D. Tonneau (Universite de la Mediteranee), P. Hoffmann, F. Cicoira (Institute of Applied Optics), B. Dwir, I. Utke, and K. Leifer (Institute de Micro-et Optoelectronique) | |
| 5:20 | 855 | Self-Assembling of Ge Dots by LPCVD - L. Vescan (Institute for Thin Films and Ion Technology) | |
| 5:40 | 856 | Effect of Carbon Predeposition on Nucleation of Quantum Dots - Q. Zhao and D. Greve (Carnegie Mellon University) |
Co-Chairs: M.T. Swihart and L. Kadinski
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:00 | 857 | 3D Analysis of MOVPE in Epitaxial Reactors by Numerical Modeling - L. Kadinski (University Erlangen - Nuremberg) and M. Dauelsberg (AIXTRON AG) | |
| 8:20 | 858 | CVD of SiC from CH3SiCl3 in a Hot-Wall-Reactorsystem: Fluid Dynamic and Kinetic Aspects - V.K. Wunder, N. Popovska, H. Gerhard, G. Emig (Universitaet Erlangen-Nuernberg), P. Kaufmann, L. Kadinski, and F. Durst (Lehrstu hl fuer Stroemungsmechanik) | |
| 8:40 | 859 | A Benchmark Solution for Multi-Dimensional Thermal CVD Modeling with Detailed Chemistry - C.R. Kleijn (Delft Univesirsity of Technology) | |
| 9:00 | 860 | On Some Numerical Issues in CVD Modeling - A. Ern (CERMICS - ENPC) | GIF |
| 9:30 | Twenty-Minute Intermission |
Co-Chairs: M.T. Swihart and L. Kadinski
| Time | Abs# | Title | View |
|---|---|---|---|
| 9:50 | 861 | Modeling and System Design for Atmospheric Pressure CVD of YSZ - T. Besmann (Oak Ridge National Laboratory), T. Starr (University of Louisville), V. Varanasi, and T. Anderson (University of Florida) | |
| 10:10 | 862 | A Stagnation-Flow MOCVD Reactor for Intelligent Deposition of YBCO Thin Films - A. Tripathi, D. Boyd, M. Gallivan, H. Atwater, R. Murray, D. Goodwin (California Institute of Technology), L. Raja, and R. Kee (Colorado School of Mines) | |
| 10:30 | 863 | Improvement of Temperature Uniformity in Rapid Thermal CVD Systems Using Multivariable Predictive Control - F. van Bilsen (ASM America, Inc.) and R. de Keyser (University of Gent) | |
| 10:50 | 864 | Silicon Films Morphology Design Through Multiscale CVD Modeling - M. Masi, C. Cavallotti, V. Bertani, and S. Carra' (Politecnico di Milano) | |
| 11:10 | 865 | The Dynamics of Spiral Thin Film Growth: A Modeling Study - M. Gallivan, R. Murray, and D. Goodwin (California Institute of Technology) | |
| 11:30 | 866 | Systematic Approach to Controlling Abnormal Structures Growth in CVD - Simulation of Nodule Structure Evolution - Y. Egashira, T. Mina, and K. Ueyama (Osaka University) | |
| 11:50 | 867 | Modeling Particle Nucleation during Thermal CVD of Silicon from Silane using Kinetic Monte Carlo Simulation - X. Li and M. Swihart (University at Buffalo (SUNY)) |
Co-Chairs: C. Amato-Wierda and T.M. Besmann
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 868 | New Liquid Precursors for CVD of Main-Group Metals - R. Gordon (Harvard University) | |
| 2:30 | 869 | Novel MOCVD Process for the Low Temperature Deposition of the Chromium Nitride Phases - F. Maury, D. Duminica, and F. Senocq (CNRS/INPT) | |
| 2:50 | 870 | MOCVD of WNx Thin Films Using Novel Amido/Imido Precursors - S. Johnston, C. Ortiz, L. McElwee-White, and T. Anderson (University of Florida) | |
| 3:10 | 871 | Vapor Phase Epitaxy of Magnesium Oxide on Silicon Using Methylmagnesium Alkoxides - M. Sung, S. Lee, C. Kim, S. Lee, Y. Lee, E. Nah, C. Kim, S. Lee, and Y. Kim (Korea Research Institute of Chemical Technology) | |
| 3:30 | Twenty-Minute Intermission |
Co-Chairs: T.M. Besmann and E.J. Wuchina
| Time | Abs# | Title | View |
|---|---|---|---|
| 3:50 | 872 | Chemical Vapor Deposition of MoS2 on and in TiN Coatings - H. Keune, G. Wahl (TU Braunschweig), and W. Lacom (Oesterreichisches Forschungszentrum Seibersdorf) | |
| 4:10 | 873 | MOCVD of Chromium Carbide from Bis-Ethyl-Benzene-Chromium - V.K. Wunder, M. Satschko, N. Popovska, H. Gerhard, and G. Emig (Universitaet Erlangen-Nuernberg) | |
| 4:30 | 874 | Measurement of the Retarding Effect of HCl on the Rate of CVD of Titaniumdiboride - C.-H. Yu, E. Zimmermann, and D. Neuschuetz (Rheinisch-Westfalische Technische Hochschule Aachen (RWTH Aachen)) | |
| 4:50 | 875 | Chemical Vapor Deposition of Aluminum on Silicon Carbide for the Investigation of the Interfacial Microstructure in Discontinuously Reinforced Aluminum - P. Ortiz, D. Oquab (Ecole Nationale Superieure de Chimie de Toulouse), I.W. Hall (Univ ersity of Delaware), and C. Vahlas (Ecole Nationale Superieure de Chimie de Toulouse) | |
| 5:10 | 876 | Nucleation and Growth of Combustion Flame Deposited Diamond on Silicon Nitride - R.T. Rozbicki (Novellus Systems, Inc.) and V.K. Sarin (Boston University) | |
| 5:30 | 877 | Effect of H2S on the Microstructure and Deposition Characteristics of Chemically Vapour Deposited kappa-Al2O3 - S. Ruppi (Seco Tools AB) and A. Larsson (Chalmers University of Tecnology and Goteborg Universi ty) | |
| 5:50 | 878 | Cosmo-Mimetic Carbon Micro-Coils - D. Motojima (Gifu University) |
Co-Chairs: T.M. Besmann and M.D. Allendorf
| Time | Abs# | Title | View |
|---|---|---|---|
| o | 879 | Gas-Phase Chemistry in the CVD of Silicon Carbide : Theoretical Study of the Reactions SiH2+CH4, SiH2+C2H2, and SiH2+C2H4 - C. Raffy (LTPCM-ENSEEG), M.D . Allendorf (Sandia National Laboratories), E. Blanquet (LTPCM-ENSEEG), and C.F. Melius (Sandia National Laboratories) | |
| o | 880 | Evaluation of Gas Phase Reaction Rate Constant by Deposition Profile Analysis for In-Situ Counter Diffusion CVD - Y. Egashira, H. Tanaka, T. Mina, N. Mori, and K. Ueyama (Osaka University) | |
| o | 881 | Integration of a Mass Spectrometer and a Quartz Crystal Microbalance for In Situ Characterization of Atomic Layer Deposition Processes in Flow Type Reactors - A. Rahtu, M. Leskela, and M. Ritala (University of Helsinki) | |
| o | 882 | Molecular Beam Mass Spectrometry Studies Of The Thermal Decomposition Of Tetrakis(Dimethylamino)Titanium - C.C. Amato-Wierda, E.T. Norton, Jr. (University of New Hampshire), and D.A. Wierda (Saint Anselm College) | |
| o | 883 | A Theoretical/Experimental Study of Atmospheric Pressure Epitaxial Silicon Reactors - S. Kommu (Washington University), G. Wilson (MEMC Electronics Materials, Inc.), and B. Khomami (Washington University) | |
| o | 884 | Kinetics and Mechanism of CVD Reactions of Silicon-Based Thin Films - V. Vassiliev (Chartered Semiconductor Manufacturing Ltd.) | |
| o | 885 | Numerical Simulation of Silicon Carbide Deposition in a Cold Wall CVD Reactor - G. Chaix, A. Dollet, M. Matecki, S. De Persis, Y. Wang, and F. Teyssandier (Institut de Science et de Genie des Materiaux et Procedes) | |
| o | 886 | The Influence of Nitrogen on Diamond Growth: Testing Several Hypotheses for the Oxy-Acetylene Torch Reactor - M. Okkerse, M.H.J.M. de Croon (Eindhoven University of Technology), C.R. Kleijn, H.E.A. van den Akker (Delft University of Technol ogy), and G.B. Marin (Universiteit Gent) | |
| o | 887 | On the Occurrence of Non-Symmetric Flows in Axi-Symmetric CVD Reactors - H. van Santen, C.R. Kleijn, and H.E.A. van den Akker (Delft University of Technology) | |
| o | 888 | Use of Ti(dpm)2(OPri)2 Precursor to Obtain TiO2 Film - V. Krisyuk, A. Turgambaeva, I. Igumenov (Institute of Inorganic Chemistry), V. Bessergenev, I. Khmelinskii, and R. Pereira (University of Alg arve) | |
| o | 889 | Monitoring of MOCVD Fabrication of LaF3 Films Using the Novel La(hfac)3?Diglyme Adducts and In Situ Synthesized La(hfac)3 Anhydrous Precursor - G. Condorelli and I. Fragala' (Universitàa di Catania) | |
| o | 890 | Characterisation of Ti-W-C Thin Films Deposited by CVD - H.X. Ji and C. Amato-Wierda (University of New Hampshire) | GIF |
| o | 891 | Development of CVD Mullite Coatings - S. Basu and V. Sarin (Boston University) | |
| o | 892 | MOCVD of Aluminosilicate Corrosion Protection Coatings - S. Zemskova, J. Haynes, and T. Besmann (Oak Ridge National Laboratory) | |
| o | 893 | CVD of TiC and WC: How Deposition Variables Affect Film Composition and Hardness Through Factorial Design - C. Amato-Wierda, K. Versprille, and P. Ramsey (University of New Hampshire) | |
| o | 894 | Growth of Gamma-Al2O3 Using Conventional CVD - A. Larsson (Chalmers University of Technology and Goteborg University) and S. Ruppi (Seco Tools AB) | |
| o | 895 | Morphology of Carbon Micro-coils Grown by Pre-Pyrolysis of Propane in a CVD Process - X. Chen (Huaqiao University) and S. Motojima (Gifu University) | |
| o | 896 | Effect of Gas Phase Nucleation on Silicon Carbide Chemical Vapor Deposition - M. Bogdanov, S. Karpov, A. Komissarov (Soft-Impact, Ltd.), A. Lovtsus (State Technical University), A. Vorob'ev (Institute for Fine Mechanics and Optics), Y. Maka rov (Fluid Mechanics Institute, University of Erlangen-Nurnberg), and S. Lowry (CFD Research Corporation) | |
| o | 897 | Plasma-Enhanced MOCVD of Smooth Nanometersized Metal/Silicon Single- and Multilayers - F. Hamelmann, G. Haindl, A. Aschentrup, A. Klipp, U. Kleineberg, P. Jutzi, and U. Heinzmann (University of Bielefeld) | |
| o | 898 | Chemical Vapor Deposition of Tantalum Nitride Thin Film Using Pentakis (Ethylmethylamido) Tantalum (PEMAT) as a Diffusion Barrier for Cu Metallization: Thermal Decomposition and Effects of Ion Beam Bombardment - K. Soo-Hyun, K. Ki-Bum (Seou l National University), C. Xiaohong, and W. Jack (ADCS, Ltd.) | |
| o | 899 | Platinum Metals Thin Films Obtained via MOCVD on CaF2 and Quartz Windows as Electrode Surfaces for In Situ Spectroelectrochemistry - S. Santi (Universit'{a} di Padova), G. Carta, S. Garon, L. Rizzo, G. Rossetto, P. Zanella (CNR), D. Barreca, and E. Tondello (Universita di Padova) | |
| o | 900 | Electrodes with Iridium Containing Coatings Obtained by CVD for Electrochemical Processes - N.V. Gelfond, N.B. Morozova, N.E. Fedotova, E.F. Reznikova, and I.K. Igumenov (Siberian Branch of Russian Academy of Sciences) | |
| o | 901 | Density Functional Theory Study on Aluminum CVD - T. Nakajima, T. Tanaka, and K. Yamasita (The University of Tokyo) | |
| o | 902 | CVD Tungsten Via Void Minimization for Sub 0.25 mm Technology - A.M. Haider, D.J. Rose, and S.P. Zuhoski (Texas Instruments, Inc.) | |
| o | 903 | Three-Dimensional Computer Simulation of WSix CVD VLSI Processing-Effect of Outlet Postion - K. Sugawara, M. Kunishige (Nihon University), Y.K. Chae, Y. Shimogaki, H. Komiyama (University of Tokyo), and Y. Egashira (Osaka University) | GIF |
| o | 904 | Processing of Tungsten Single Crystal by Chemical Vapor Deposition - R. Zee, S. Gale, and Z. Xiao (Auburn University) | |
| o | 905 | CVD/PVD Co-Deposition of the DEB/Palladium Hydrogen Getter System - D. Carroll, K. Salazar, M. Trkula, C. Sandoval, J. Rau, and D. Pesiri (Los Alamos National Laboratory) | |
| o | 906 | Ultra Thin TiO2 Films Deposited by Atomic Layer Chemical Vapor Deposition - M. Schuisky, M. Ludvigsson, A. Harsta (Uppsala University), K. Kukli, J. Aarik, and A. Aidla (University of Tartu) | |
| o | 907 | Characterisation of Ta2O5 Films Prepared by ALCVD - K. Forsgren, J. Sundqvist, A. Harsta (University of Uppsala), K. Kukli, J. Aarik, and A. Aidla (Tartu University) | |
| o | 908 | Growth Kinetics of Al2O3 Thin Films Using Aluminium Dimethylisopropoxide - D. Barreca (Universita di Padova), G.A. Battiston, and R. Gerbasi (CNR) | |
| o | 909 | Quality Improvement of SiO2-Films by Adding Foreign Gases in Photo-Chemical Vapor Deposition - Y. Motoyama, J.-I. Miyano (Miyazaki OKI electric Co.,Ltd.), K. Kurosawa (Institute for Molecular Science), and A. Yokotani (University of Miyazaki) | |
| o | 910 | SiO2 Deposition Mechanism in Photo-Chemical Vapor Deposition Using Vacuum Ultraviolet Excimer Lamp - J. Miyano, Y. Motoyama (Miyazaki Oki Co. Ltd.), K. Kurosawa (Institute for Molecular Science), K. Toshikawa, T. Yokoyama, H. Mut ou (Miyazaki Oki Co. Ltd.), A. Yokotani, and W. Sasaki (University of Miyazaki) | |
| o | 911 | In-Situ Preparation of Ti-Containing Ta2O5 Films by Halide CVD - K. Forsgren and A. Harsta (University of Uppsala) | |
| o | 912 | In-Situ Measurement of the Decomposition on GaN OMVPE Precursors by Raman Spectroscopy - C. Park, S. Lee (Yeungnam University), M. Huang, and T. Anderson (University of Florida) | |
| o | 913 | Quasi-Thermodynamic Models of Surface Chemistry: Application to MOVPE of III-V Ternary Compounds - S.Y. Karpov, E.V. Yakovlev, V.G. Prokofjev, R.A. Talalaev (Soft-Impact Ltd.), Y.A. Shpolyanskiy (Institute for Fine Mechanics and Optics), Y. N. Makarov (University of Erlangen-Nuenberg), and S.A. Lowry (CFD Research Corporation) | |
| o | 914 | Thin Film Deposition of Manganese Oxides and Lanthanum Manganite by the ALE Process - O. Nilsen (University of Oslo), M. Peussa (Helsinki University of Technology), H. Fjellvag (University of Oslo), L. Niinisto (Helsinki University of Techn ology), and A. Kjekshus (University of Oslo) | |
| o | 915 | Stability of RuO2 Bottom Electrode and its Effect on the Ba-Sr-Ti Oxide Film Quality - Y.-J. Oh and C.-H. Chung (Sungkyunkwan University) | |
| o | 916 | Buffer Layers for the Growth of HTc Superconductors on Unconventional Substrates: MOCVD Depositions of Pt <100> and CeO2 <100> Oriented Films - G. Malandrino, R. Lo Nigro, and I. Fragala' (Universita' di Catania,) | |
| o | 917 | Global Model of Silicon Chemical Vapor Deposition in Centura Reactors - A. Segal (Institute for Fine Mechanics and Optics), A. Galyukov, A. Kondratyev, A. Sid'ko, S. Karpov (Soft-Impact, Ltd.), Y. Makarov (University of Erlangen-Nurnberg), W. Siebert (Wacker Siltronics AG), and S. Lowry (CFD Research Corporation) | |
| o | 918 | Evaluation of Precursors for the Chemical Vapour Deposition of Tin Oxide - A.M.B. van Mol, G.R. Alcott (TNO-TPD), M.H.J.M. de Croon (Eindhoven University of Technology), C.I.M.A. Spee (TNO-TPD), and J.C. Schouten (Eindhoven University of Te chnology) | GIF |
Co-Chairs: Y. Shimogaki and M.L. Hitchman
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 919 | Chemical Vapor Deposition of Low Trap Density SiGe Quantum Well Layers on Silicon - S. Kar (Indian Institute of Technology, Kanpur) and P. Zaumseil (Institute for Semiconductor Physics) | |
| 10:30 | 920 | Loading Effects during Non-Selective Epitaxial Growth of Si and SiGe - J. Pejnefors, S.-L. Zhang, M. Ostling (Royal Institute of Technology (KTH) - Stockholm), and T. Winzell (Lund University) | |
| 10:50 | 921 | Thermodynamic Analysis of Selective Epitaxial Growth of Silicon - W.-S. Cheong, J.-H. Joung, J.-W. Park, and D.-J. Ahn (Hyundai Electronics Co., Inc.) | |
| 11:10 | 922 | Nanocrystals Formation and Microstructure Evolution of Amorphous Si and Si0.7Ge0.3 by Using Low Pressure Chemical Vapor Deposition - T.-S. Yoon, D.-H. Lee, J.-Y. Kwon, K.-B. Kim (Seoul National University), and S.-H. M in (Kangnung National University) | |
| 11:30 | 923 | The Profile Control of n-type Doping in Low-Temperature Si Epitaxy and its Effect on the Performance of High Frequency Bipolar Transistors - H.H. Radamson, B. Mohadjeri, B.G. Malm, J.V. Grahn, M. Ostling, and G. Landgren (Royal Institute of Technology (KTH)) | |
| 11:50 | 924 | CVD-Epitaxial Growth on Porous Si for ELTRAN SOI-Epi Wafers - N. Sato, S. Ishii, and T. Yonehara (Canon Inc.) |
Co-Chairs: M.L. Hitchman and Y. Shimogaki
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 925 | Comparison of Dislocation Generation in Selective and Non Selective SiGe Epitaxy - C. Fellous, F. Romagna, and D. Dutartre (Centre Commun CNET/STMicroelectronics) | |
| 2:20 | 926 | MOSFET Evaluation of Ultraclean-CVD Si and SiGe Grown at 550 Degrees C on SIMOX - K. Fujinaga (Hokkaido Institute of Technology) | GIF |
Co-Chairs: M.L. Hitchman and Y. Shimogaki
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:40 | 927 | Selective Deposition of Metals via OMCVD Onto Self-Assembled Monolayers - R.A. Fischer, U. Weckenmann, and C. Winter (Ruhr-Universitaet Bochum) | |
| 3:10 | Twenty-Minute Intermission | ||
| 3:30 | 928 | Surface Adsorption of WF6 on Si and SiO2 in Selective W-CVD - Y. Yamamoto, T. Matsuura, and J. Murota (Tohoku University) | |
| 3:50 | 929 | A Kinetic Study on W Deposition Using Non-flowing CVD Reactor - S. Kim (Colorado State University) and C. McConica (Oregon State University) | |
| 4:10 | 930 | Chemical Vapor Deposition of Titanium Nitride and Titanium Silicon Nitride Thin Films From Tetrakis-(dimethylamido)Titanium and Hydrazine as a Co-Reactant - C. Amato-Wierda (University of New Hampshire) and D.A. Wierda (Saint Anselm College ) | |
| 4:30 | 931 | Chemical Vapor Deposition of Copper Using hfacCu(I)DMB(3,3-dimethyl-1-butene) Liquid Precursor - C. Kyeong-Keun and R. Shi-Woo (Pohang University of Science and Technology) | |
| 4:50 | 932 | Reaction of Bis-(2,4-Pentanedionato) M(II) (M= Ni, Cu) Under Low Pressure CVD Conditions - C. Vestal, H. Sturgill, and T. DeVore (JamesMadison University) | GIF |
| 5:10 | 933 | Metalorganic Chemical Vapor Deposition of Nickel Films: Investigation of a New Precursor, [Ni(tmen)(u-CF3CO2)(CF3CO2)]2(u-H2O) - J.-K. Kang (Pohang University of Science and Technology) , F. Senocq, A. Gleizes (Ecole Nationale Superieure de Chimie de Toulouse), S.-W. Rhee (Pohang University of Science and Technology), and C. Vahlas (Ecole Nationale Superieure de Chimie de Toulouse) | |
| 5:30 | 934 | Surface Analysis of CVD-Al Film Prepared from Dimethyl-Aluminum-Hydride - M. Sugiyama, H. Ogawa (University of Tokyo), H. Itoh, J. Aoyama (STARC), Y. Horiike, H. Komiyama, and Y. Shimogaki (University of Tokyo) | GIF |
| 5:50 | 935 | Simplified CMP Planarization Process Integration for Trench Isolation Applications - K. Kapkin, M. Mogaard, T. Curtis (SVG Thermal Systems), C. Artufel (ATMEL FAB 7 / ES2), and J. deRuiter (SVG Thermal Systems) |
Co-Chairs: R.K. Ulrich and R.A. Fischer
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:00 | 936 | CVD of Zr-Sn-Ti-O for Capacitor Applications - Y. Senzaki (Schumacher), G. Alers (Lucent Technologies), A. Hochberg, D. Roberts, J. Norman (Schumacher), R. Fleming, and H. Kauter (Lucent Technologies) | |
| 8:20 | 937 | Atomic Layer Deposition of High-k Oxides - M. Ritala, K. Kukli, M. Vehkamaki, T. Hanninen, T. Hatanpaa, and M. Leskela (University of Helsinki) | |
| 8:40 | 938 | Atomic Layer Deposition of Metal Oxide Films by using Metal Alkoxides as an Oxygen Source - P. Raisanen, K. Kukli, A. Rahtu, M. Ritala, and M. Leskela (University of Helsinki) | |
| 9:00 | 939 | Reactor Scale Simulation of Metal Oxide Deposition from an Inorganic Precursor - J.V. Cole (Motorola Advanced Systems Research Laboratory), A. Nangia (Motorola Advanced Products Research and Development Laboratory), and T. Mihopoulos (Motor ola Advanced Systems Research Laboratory) | |
| 9:30 | 940 | Characterisation of LPCVD Nitride Deposition in the ONO Stack for NVM Applications - M.J. Teepen, M.A.A.M. vanWijck, and H. Sprey (ASM Europe bv) | |
| 9:50 | Twenty-Minute Intermission |
Co-Chairs: R.A. Fischer and R.K. Ulrich
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:10 | 941 | Reaction-Transport Models of the Metalorganic Vapor Phase Epitaxy of Gallium Nitride - R. Pawlowski, C. Theodoropoulos (State University of New York), A. Salinger, H. Moffat (Sandia National Laboratories), and T.J. Mountziaris (State Univer sity of New York) | |
| 10:30 | 942 | Investigations of GaN CVD Using Synchrotron Radiation - C. Thompson (Northern Illinois University), G.B. Stephenson, J.A. Eastman, A. Munkholm, O. Auciello, R. Murty (Argonne National Laboratory), P. Fini, S.P. DenBaars, and J.S. Speck (Uni versity of California - Santa Barbara) | |
| 11:00 | 943 | Experimental and Numerical Study of InGaAsP Materials Growth Kinetics and Composition - O. Feron, M. Sugiyama, Y. Nakano, and Y. Shimogaki (University of Tokyo) | |
| 11:20 | 944 | Ruthenium Doped Indium Phosphide Growth by Low Pressure Hydride Vapor Phase Epitaxy - D. Soderstrom, S. Lourdudoss, M. Wallnas (Royal Institute of Technology), A. Dadgar, O. Stenzel, D. Bimberg, and H. Schumann (Technische Universitat Berli n) | |
| 11:40 | 945 | Growth of Hexagonal GaN Films by MOCVD Using Novel Single Precursors - C. Kim, S.H. Yu, J.H. Lee, Y. Lee, M. Sung, and Y. Kim (Korea Research Institute of Chemical Technology) |
Co-Chairs: R.K. Ulrich and R.A. Fischer
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 946 | Multi 6 Inch MOVPE Technology for GaAs, GaInP, and AlGaInP Compounds - M. Bremser (AIXTRON Inc.), T. Schmitt, M. Deufel, G. Strauch, D. Schmitz, M. Heuken, and H. Juergensen (AIXTRON AG) | GIF |
| 2:20 | 947 | Growth Kinetics and Mechanistic Studies of GaN Thin Films Grown by OMVPE Using (N3)2Ga[(CH2)3NMe2] as Single Source Precursor - R.A. Fischer, A. Wohlfart, A. Devi, W. Rogge (Ruhr-Universitaet Bochum), J. Schaefer, J. Wolfrum (Ruprecht-Karls -Universitaet Heidelberg), and M.D. Allendorf (Sandia National Laboratories) |
Co-Chairs: M.D. Allendorf and K. Dahmen
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:40 | 948 | Thin Films of Magnetoresistive Intermetallic and Composite Materials - K.-H. Dahmen and I. Chuprakov (Florida State University,) | |
| 3:00 | 949 | Diagnostics of Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO3 Films by Microdischarge Optical Emission Spectroscopy - S. Momose, T. Nakamura, and K. Tachibana (Kyoto University) | |
| 3:20 | Twenty-Minute Intermission | ||
| 3:40 | 950 | Bismuth Titanate Thin Films Deposited by Halide Chemical Vapor Deposition - M. Schuisky and A. Harsta (Uppsala University) | |
| 4:00 | 951 | LPCVD of Optical Interference Coatings for Micro-Optical Applications - M. George and D. Rogers (Deposition Sciences, Inc.) | |
| 4:20 | 952 | Characteristics of Silicon Oxy-Nitride Thin Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition - C. Simionescu, F. Bounasri, S. Wallace, H. Haugen, J. Davies, and P. Mascher (McMaster University) | |
| 4:40 | 953 | CVD of Molecule-based Conductors and Magnets - L. Valade, D. de Caro, H. Casellas, M. Basso-Bert, C. Faulmann, J.-P. Legros, P. Cassoux (CNRS - Laboratoire de Chimie de Coordination), and L. Aries (CNRS - Laboratoire de Chimie des Matériaux Inorganiques et Energétiques) | |
| 5:00 | 954 | Molecular Dynamics Simulation on Crystal Growth Process of Electronics Materials - M. Kubo, Y. Inaba, T. Onozu, S. Takami, A. Miyamoto (Tohoku University), M. Kawasaki, M. Yoshimoto, and H. Koinuma (Tokyo Institute of Technology) |