198th Meeting - Phoenix, Arizona

October 22-27, 2000

PROGRAM INFORMATION

G1 - Fourth International Symposium on Chemical Mechanical Polishing (CMP)

Dielectric Science and Technology Division/ Electronics Division

Monday, October 23, 2000

Yuma 24

The Role of Wear and Fluid Flow

Co-Chairs: R.L. Opila and S. Seal

TimeAbs#TitleView
10:00470 Challenges and State of the Art in Simulation of Chemo-Mechanical Processes - S.B. Trickey (University of Florida) and P. Deymier (University of Arizona) PDF
10:30471 CMP Finite Element Contact Model: Wafer and Feature Scale - A. Kim, M.K.R. Williams, J. Tichy, and T. Cale (Rensselaer Polytechnic Institute) PDF
10:45472 Study on Nano-Scale Wear of Silicon Oxide in CMP Process - S. Seta, T. Nishioka, Y. Tateyama, and N. Miyashita (Toshiba Corporation) PDF
11:00473 Multi-Scale Modeling of Flow and Mass-Transfer in Chemical Mechanical Polishing - L. Jiang, H. Simka, and S. Shankar (Intel Corporation) PDF
11:15474 Developing Engineered Particulate Systems for Oxide Chemical Mechanical Polishing - G.B. Basim, J.J. Adler, U. Mahajan, R.K. Singh, and B.M. Moudgil (University of Florida) PDF
11:30475 Quantitative Filtration Method for Evaluation of Large Particle Content in a Slurry and Its Application - N. Kim, Y.-S. Lim, K. Kang, K. Lee, and I. Lee (Samsung Electronics) PDF
11:45476 Light Scatter from Roughness and Dishing on Chemically-Mechanically Polished Wafers - P. Ding, R. Diaz (Arizona State University), and D. Hirleman (Purdue University) PDF

CMP: Slurries

Co-Chairs: C. Reidsema-Simpson and M.R. Oliver

TimeAbs#TitleView
1:30477 Physical and Chemical Characterization of Re-used Oxide CMP Slurry - H.-J. Kim, D.-H. Eom, and J.-G. Park (Hanyang University) PDF
1:45478 Effect of Added Surfactants on Oxide to Polysilicon Selectivity during Chemical Mechanical Polishing (CMP) - J.-D. Lee, B.U. Yoon, S.R. Hah, and J.T. Moon (Samsung Electronics Co., Ltd.) PDF
2:00479 Aqueous Slurries in Chemical Mechanical Polishing: Adsorption of Silicate Ions by Ceria - K. Osseo-Asare and P. Suphantharida (The Pennsylvania State University) PDF
2:15480 Study on Ceria-Based Slurry for STI Planarization - Y. Tateyama, T. Hirano, T. Ono, N. Miyashita, and T. Yoda (Toshiba Corporation) PDF
2:30481 Effect of Slurry Chemistry in Metal CMP - V. Desai, D. Tamboli, C. Wei, S. Seal, A. Guha, and W. Easter (University of Central Florida) PDF
3:00 Thirty-Minute Intermission
3:30482 Concentration Gradient Effect in Tungsten Chemical Mechanical Polishing - M. Anik and K. Osseo-Asare (The Pennsylvania State University) PDF
3:45483 An Electrochemical Investigation on Ti and TiN - K. Sundaram, V. Chathapuram, V. Desai, and S. Seal (University of Central Florida) PDF
4:00484 Electrochemical Effects of Various Slurries on Chemical Mechanical Polishing of Copper - T. Tzu-Hsuan and Y. Shi-Chern (National Taiwan University) PDF
4:15485 Electrochemical Behavior of Copper in Hydroxylamine Solutions - K. Osseo-Asare and A. Al-Hinai (The Pennsylvania State University) PDF
4:30486 Effect of Organic Acids in Slurry on Cu CMP - D.-H. Eom, H.-J. Kim (Hanyang University), H.-S. Song (Dong-Woo Fine-Chem. Co. Ltd.), and J.-G. Park (Hanyang University) PDF

Tuesday, October 24, 2000

CMP: Pads and Wear

Co-Chairs: S. Seal and K. Osseo-Asare

TimeAbs#TitleView
9:00487 CMP Pad Surface Roughness and CMP Removal Rate - M. Oliver, R. Schmidt (Rodel, Inc.), and M. Robinson (Zygo Corp.) PDF
9:30488 Microstructural Characterization of CMP Polyurethane Polishing Pads - S. Machinski, K. Richardson (University of Central Florida), and W.G. Easter (Lucent Technologies) PDF
9:45489 Non-Destructive Evaluation of CMP Pads Using Scanning Ultrasonic Technique - A. Belyaev, D. Totzke, I. Tarasov, F. Diaz, F. Pachano, W. Moreno, and S. Ostapenko (University of South Florida) PDF
10:00490 Surface Characterization of Polyurethane Pads Used in Chemical Mechanical Polishing (CMP) - J. Ramsdell, S. Seal, I. Li, K.A. Richardson, V. Desai (University of Central Florida), and W.G. Easter (Lucent Technologies) PDF
10:15491 A Novel Design of Polish Pad For Advanced Copper CMP Performance - S. Tsai (Applied Materials) PDF
10:30492 Morphology Evolution during Copper CMP: Comparison of Fixed Abrasive and Conventional Pads - D. Evans (SHARP Laboratories of America, Inc.), M. Oliver, and M. Kulus (Rodel, Inc.) PDF
10:45493 Pattern Dependent Polish Rate Behavior in Oxide Chemical Mechanical Polishing - A. Lawing (Rodel, Inc.) and T. Merchant (Motorola Semiconductor Products Sector) PDF
11:00494 Planarization Characteristics and Mechanisms of Fixed Abrasive CMP for STI Applications - K. Mikhaylich, J. Boyd, and J. Brown (Lam Research Corp.) PDF
11:15495 Post CMP Defects in Sub Quarter Micron Generation Devices - M.F. Ng, Q. Li, J. Chee, J. Sudijono, T.J. Lee, and A. Cuthbertson (Chartered Semiconductor Manufacturing Ltd.) PDF

CMP: Cu

Co-Chairs: M. Landau and K.B. Sundaram

TimeAbs#TitleView
1:30496 Fundamentals of Cu CMP for Dual Damascene Technology - Y. Gotkis and R. Kistler (Lam Research Corporation) PDF
2:00497 Integration of Copper and Low-K Materials for Advanced Interconnects - A. Zutshi and R. Bajaj (Applied Materials) PDF
2:30498 Effects of Copper Film Thickness on Copper CMP Performance - T.C. Tsai, H.C. Chen, Y.T. Wei, Y.K. Shida, C.L. Hsu, and M.S. Yang (United Microelectronics Corporation) PDF
2:45499 Treatment of Post CuCMP Waste Water without Hazardous Waste Generation - R. Woodling (USFilter) PDF
3:00500 Characterization of Novel Post Cu CMP Cleaners using Cu Contaminated Interlayer Dielectrics - I. Kobayashi, K. Ishii, T. Miyazawa, H. Fukuro (Nissan Chemical Industries, Ltd.), R. Stevens (ATMI, Inc.), and T. Hara (Hosei University) PDF
3:15 Fifteen-Minute Intermission

Shallow Trench Isolation

Co-Chairs: K.B. Sundaram and R.L. Opila

TimeAbs#TitleView
3:30501 Low Cost and Effective IMD Planarization Using CMP and Resist Etchback - V. Lim and C. Feng (Chartered Semiconductor Manufacturing Ltd) PDF
3:45502 Pattern Density and Feature Size Effects in STI CMP: Their Impacts on Electrical Performance - J. Kalpathy-Cramer, E. Kirchner, and M. Berman (LSI Logic) PDF
4:00503 Reducing STI Oxide Elevation Variation Using Adjustable Time HF Dip Approach - F. Chen, S. Balakumar, K.H. Lee, and C.H. Loh (Chartered Semiconductor Manufacturing Ltd.) PDF
4:15504 Dishing Reduction Using PolySilicon Buffer STI-CMP Scheme - V. Lim and C. Feng (Chartered Semiconductor Manufacturing Ltd) PDF