Co-Chairs: R.L. Opila and S. Seal
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 470 | Challenges and State of the Art in Simulation of Chemo-Mechanical Processes - S.B. Trickey (University of Florida) and P. Deymier (University of Arizona) | |
| 10:30 | 471 | CMP Finite Element Contact Model: Wafer and Feature Scale - A. Kim, M.K.R. Williams, J. Tichy, and T. Cale (Rensselaer Polytechnic Institute) | |
| 10:45 | 472 | Study on Nano-Scale Wear of Silicon Oxide in CMP Process - S. Seta, T. Nishioka, Y. Tateyama, and N. Miyashita (Toshiba Corporation) | |
| 11:00 | 473 | Multi-Scale Modeling of Flow and Mass-Transfer in Chemical Mechanical Polishing - L. Jiang, H. Simka, and S. Shankar (Intel Corporation) | |
| 11:15 | 474 | Developing Engineered Particulate Systems for Oxide Chemical Mechanical Polishing - G.B. Basim, J.J. Adler, U. Mahajan, R.K. Singh, and B.M. Moudgil (University of Florida) | |
| 11:30 | 475 | Quantitative Filtration Method for Evaluation of Large Particle Content in a Slurry and Its Application - N. Kim, Y.-S. Lim, K. Kang, K. Lee, and I. Lee (Samsung Electronics) | |
| 11:45 | 476 | Light Scatter from Roughness and Dishing on Chemically-Mechanically Polished Wafers - P. Ding, R. Diaz (Arizona State University), and D. Hirleman (Purdue University) |
Co-Chairs: C. Reidsema-Simpson and M.R. Oliver
| Time | Abs# | Title | View |
|---|---|---|---|
| 1:30 | 477 | Physical and Chemical Characterization of Re-used Oxide CMP Slurry - H.-J. Kim, D.-H. Eom, and J.-G. Park (Hanyang University) | |
| 1:45 | 478 | Effect of Added Surfactants on Oxide to Polysilicon Selectivity during Chemical Mechanical Polishing (CMP) - J.-D. Lee, B.U. Yoon, S.R. Hah, and J.T. Moon (Samsung Electronics Co., Ltd.) | |
| 2:00 | 479 | Aqueous Slurries in Chemical Mechanical Polishing: Adsorption of Silicate Ions by Ceria - K. Osseo-Asare and P. Suphantharida (The Pennsylvania State University) | |
| 2:15 | 480 | Study on Ceria-Based Slurry for STI Planarization - Y. Tateyama, T. Hirano, T. Ono, N. Miyashita, and T. Yoda (Toshiba Corporation) | |
| 2:30 | 481 | Effect of Slurry Chemistry in Metal CMP - V. Desai, D. Tamboli, C. Wei, S. Seal, A. Guha, and W. Easter (University of Central Florida) | |
| 3:00 | Thirty-Minute Intermission | ||
| 3:30 | 482 | Concentration Gradient Effect in Tungsten Chemical Mechanical Polishing - M. Anik and K. Osseo-Asare (The Pennsylvania State University) | |
| 3:45 | 483 | An Electrochemical Investigation on Ti and TiN - K. Sundaram, V. Chathapuram, V. Desai, and S. Seal (University of Central Florida) | |
| 4:00 | 484 | Electrochemical Effects of Various Slurries on Chemical Mechanical Polishing of Copper - T. Tzu-Hsuan and Y. Shi-Chern (National Taiwan University) | |
| 4:15 | 485 | Electrochemical Behavior of Copper in Hydroxylamine Solutions - K. Osseo-Asare and A. Al-Hinai (The Pennsylvania State University) | |
| 4:30 | 486 | Effect of Organic Acids in Slurry on Cu CMP - D.-H. Eom, H.-J. Kim (Hanyang University), H.-S. Song (Dong-Woo Fine-Chem. Co. Ltd.), and J.-G. Park (Hanyang University) |
Co-Chairs: S. Seal and K. Osseo-Asare
| Time | Abs# | Title | View |
|---|---|---|---|
| 9:00 | 487 | CMP Pad Surface Roughness and CMP Removal Rate - M. Oliver, R. Schmidt (Rodel, Inc.), and M. Robinson (Zygo Corp.) | |
| 9:30 | 488 | Microstructural Characterization of CMP Polyurethane Polishing Pads - S. Machinski, K. Richardson (University of Central Florida), and W.G. Easter (Lucent Technologies) | |
| 9:45 | 489 | Non-Destructive Evaluation of CMP Pads Using Scanning Ultrasonic Technique - A. Belyaev, D. Totzke, I. Tarasov, F. Diaz, F. Pachano, W. Moreno, and S. Ostapenko (University of South Florida) | |
| 10:00 | 490 | Surface Characterization of Polyurethane Pads Used in Chemical Mechanical Polishing (CMP) - J. Ramsdell, S. Seal, I. Li, K.A. Richardson, V. Desai (University of Central Florida), and W.G. Easter (Lucent Technologies) | |
| 10:15 | 491 | A Novel Design of Polish Pad For Advanced Copper CMP Performance - S. Tsai (Applied Materials) | |
| 10:30 | 492 | Morphology Evolution during Copper CMP: Comparison of Fixed Abrasive and Conventional Pads - D. Evans (SHARP Laboratories of America, Inc.), M. Oliver, and M. Kulus (Rodel, Inc.) | |
| 10:45 | 493 | Pattern Dependent Polish Rate Behavior in Oxide Chemical Mechanical Polishing - A. Lawing (Rodel, Inc.) and T. Merchant (Motorola Semiconductor Products Sector) | |
| 11:00 | 494 | Planarization Characteristics and Mechanisms of Fixed Abrasive CMP for STI Applications - K. Mikhaylich, J. Boyd, and J. Brown (Lam Research Corp.) | |
| 11:15 | 495 | Post CMP Defects in Sub Quarter Micron Generation Devices - M.F. Ng, Q. Li, J. Chee, J. Sudijono, T.J. Lee, and A. Cuthbertson (Chartered Semiconductor Manufacturing Ltd.) |
Co-Chairs: M. Landau and K.B. Sundaram
| Time | Abs# | Title | View |
|---|---|---|---|
| 1:30 | 496 | Fundamentals of Cu CMP for Dual Damascene Technology - Y. Gotkis and R. Kistler (Lam Research Corporation) | |
| 2:00 | 497 | Integration of Copper and Low-K Materials for Advanced Interconnects - A. Zutshi and R. Bajaj (Applied Materials) | |
| 2:30 | 498 | Effects of Copper Film Thickness on Copper CMP Performance - T.C. Tsai, H.C. Chen, Y.T. Wei, Y.K. Shida, C.L. Hsu, and M.S. Yang (United Microelectronics Corporation) | |
| 2:45 | 499 | Treatment of Post CuCMP Waste Water without Hazardous Waste Generation - R. Woodling (USFilter) | |
| 3:00 | 500 | Characterization of Novel Post Cu CMP Cleaners using Cu Contaminated Interlayer Dielectrics - I. Kobayashi, K. Ishii, T. Miyazawa, H. Fukuro (Nissan Chemical Industries, Ltd.), R. Stevens (ATMI, Inc.), and T. Hara (Hosei University) | |
| 3:15 | Fifteen-Minute Intermission |
Co-Chairs: K.B. Sundaram and R.L. Opila
| Time | Abs# | Title | View |
|---|---|---|---|
| 3:30 | 501 | Low Cost and Effective IMD Planarization Using CMP and Resist Etchback - V. Lim and C. Feng (Chartered Semiconductor Manufacturing Ltd) | |
| 3:45 | 502 | Pattern Density and Feature Size Effects in STI CMP: Their Impacts on Electrical Performance - J. Kalpathy-Cramer, E. Kirchner, and M. Berman (LSI Logic) | |
| 4:00 | 503 | Reducing STI Oxide Elevation Variation Using Adjustable Time HF Dip Approach - F. Chen, S. Balakumar, K.H. Lee, and C.H. Loh (Chartered Semiconductor Manufacturing Ltd.) | |
| 4:15 | 504 | Dishing Reduction Using PolySilicon Buffer STI-CMP Scheme - V. Lim and C. Feng (Chartered Semiconductor Manufacturing Ltd) |