Co-Chairs: C. Reidsema-Simpson and B.C. Baker
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 505 | Copper Metallization of Semiconductor Interconnects- Issues and Prospects - U. Landau (Case Western Reserve University) | |
| 10:30 | 506 | Role of Chemicals and Abrasive Particle Properties on Chemical-Echanical Polishing of Cu and Ta - Y. Li, A. Jindal, and S.V. Babu (Clarkson University) | |
| 11:00 | 507 | Effect of Additives on the Cathodic Reaction in Copper CMP - A. Al-Hinai and K. Osseo-Asare (Pennsylvania State University) | |
| 11:15 | 508 | Role of Inhibitors in Slurries in Altering Surfaces: Cu-CMP - S. Seal, A. Guha, V. Desai (University of Central Florida), and W.G. Easter (Bell Laboratories, Lucent Technologies) | |
| 11:30 | 509 | Interconnect Metallization Using Propanesulfonic Acid Electrolytes - D. Morrisey, R. Schetty (Shipley Company, L.L.C.), and N. Martyak (Elf Atochem NA) | |
| 11:45 | 510 | Analysis of Copper Plating Bath Additives – Suppressors and Levelers - B. Newton and E. Kaiser (Dionex Corporation) |