198th Meeting - Phoenix, Arizona

October 22-27, 2000

PROGRAM INFORMATION

G2 - Joint Session: Fourth International Symposium on Chemical Mechanical Polishing (CMP) & Copper Interconnects, New Contact Metallurgies/Structures, and Low-K Interlevel Dielectrics

Dielectric Science and Technology Division/ Electronics Division/Electrodeposition Division

Wednesday, October 25, 2000

Yuma 24

Cu Metallization Deposition and CMP

Co-Chairs: C. Reidsema-Simpson and B.C. Baker

TimeAbs#TitleView
10:00505 Copper Metallization of Semiconductor Interconnects- Issues and Prospects - U. Landau (Case Western Reserve University) PDF
10:30506 Role of Chemicals and Abrasive Particle Properties on Chemical-Echanical Polishing of Cu and Ta - Y. Li, A. Jindal, and S.V. Babu (Clarkson University) PDF
11:00507 Effect of Additives on the Cathodic Reaction in Copper CMP - A. Al-Hinai and K. Osseo-Asare (Pennsylvania State University) PDF
11:15508 Role of Inhibitors in Slurries in Altering Surfaces: Cu-CMP - S. Seal, A. Guha, V. Desai (University of Central Florida), and W.G. Easter (Bell Laboratories, Lucent Technologies) PDF
11:30509 Interconnect Metallization Using Propanesulfonic Acid Electrolytes - D. Morrisey, R. Schetty (Shipley Company, L.L.C.), and N. Martyak (Elf Atochem NA) PDF
11:45510 Analysis of Copper Plating Bath Additives Suppressors and Levelers - B. Newton and E. Kaiser (Dionex Corporation) PDF