198th Meeting - Phoenix, Arizona

October 22-27, 2000

PROGRAM INFORMATION

L1 - High Purity Silicon VI

Electronics Division/ SPIE

Monday, October 23, 2000

Yuma 21

High Purity Silicon Fabrication Techniques

Co-Chairs: M. Watanabe and P. Stallhofer

TimeAbs#TitleView
2:00671 Advanced Silicon Wafers for 0.18 um Design Rule and Beyond: EPI and Flash! - R. Schmolke, M. Blietz, R. Schauer, D. Zemke, H. Oelkrug, and W. von Ammon (Wacker Siltronic AG) PDF
2:30672 The Time Dependence of Point Defect Behavior near the Growth Interface in Cz-Si - B.M. Park and I.S. Choi (LG Siltron Inc.) PDF
2:50673 Effect of the Shape of Crystal-Melt Interface on Point Defect Reaction in Silicon Crystals - K. Nakamura, S. Maeda, S. Togawa, T. Saishoji, and J. Tomioka (Komatsu Electronic Metals Co., Ltd.) GIF
3:10 Twenty-Minute Intermission
3:30674 High Pull Speed for Fast Pulled Crystal in CZ Growth - H.J. Oh, J.H. Wang, K.-M. Kim, and H.-D. Yoo (LG Siltron) PDF
3:50675 Micro-Fluctuation of Growth-Rate and Grown-In Defect Distribution in CZ-Si - J. Fukuda, M. Hasebe, T. Iwasaki, H. Harada (NSC Electron Corporation), and M. Tanaka (Nippon Steel Corporation) PDF
4:10676 Direct Proof of Argon Atoms Incorporation into High-Purity Silicon Single Crystals during Growth in Argon Gas Ambient - A. Ulyashin, R. Job, W. Fahrner (University of Hagen), A. Mudryi, A. Patuk, and I. Shakin (Belarussian Academy of Science) PDF
4:30677 Nucleation of Void Defects in CZ Silicon - Y. Yamanaka, K. Tanahashi, T. Mikayama, N. Inoue. (Osaka Prefecture University), and A. Mori (The University of Tokushima) PDF
4:50678 The Formation Mechanism for Coupled Voids in Czochralski Grown Silicon Crystals - F. Ishikawa, S. Sadohara, T. Saishoji, K. Nakamura, and J. Tomioka (Komatsu Electronic Metals Co., Ltd.) GIF
5:10679 Valence Force Field Analysis of Nitrogen in Silicon - H. Harada, K. Tanahashi (RIAST, Osaka Prefecture University), A. Koukitsu (Tokyo University of Agriculture and Technology), and N. Inoue (RIAST, Osaka Prefecture University) PDF

Tuesday, October 24, 2000

Intrinsic and Inpurity Related Defects

Co-Chairs: B. Sopori and T. Abe

TimeAbs#TitleView
8:00680 Silicon Float-Zone Crystal Growth as a Tool For the Study of Defects and Impurities - T.F. Ciszek and T.H. Wang (National Renewable Energy Laboratory) PDF
8:30681 Transient Simulation of Grown-in Defect Dynamics in Czochralski Crystal Growth of Silicon - T. Mori, Z. Wang, and R. Brown (Massachusetts Institute of Technology) PDF
8:50682 Detection of Oxygen-Related Defects in Silicon Wafers by Highly Selective Reactive Ion Etching - K. Nakashima, Y. Watanabe, T. Yoshida, and Y. Mitsushima (Toyota Central R&D Labs., Inc) PDF
9:10683 Misfit Dislocation Nucleation Study in P/P+ Si - P. Feichtinger, M.S. Goorsky (UCLA), D. Oster, T. D'Silva (Wacker Siltronic Corp.), and J. Moreland (Wacker Siltronic AG) PDF
9:30684 Screening of Dislocations in Silicon by Point Defects - I. Peidous (The University of the West Indies) and K. Loiko (Dallas Semiconductor Corporation) PDF
9:50685 Vacancy-Nitrogen Complexes in Float-Zone Silicon - F. Quast, P. Pichler (Fraunhofer Institut fuer Integrierte Schaltungen, Bauelementetechnologie), H. Ryssel (Universitaet Erlangen-Nuernberg), and R. Falster (MEMC Electronic Materials SpA) PDF
10:10 Twenty-Minute Intermission
10:30686 Oxygen Precipitation Behavior and Its Optimum Condition for Internal Gettering and Mechanical Strength in Polished and Epitaxial Silicon Wafers - K. Sueoka, M. Akatsuka (Sumimto Metal Industries), T. Ono, E. Asayama, Y. Koike, N. Adachi, S. Sadamitsu, H. Katahama, and H. Katahama (Sumimoto Metal Industries) GIF
11:00687 Threshold Stresses of Dislocation Generation Onset in Silicon - I. Peidous (The University of the West Indies), K. Loiko (Dallas Semiconductor Corporation), N. Balasubramanian (Institute of Microelectronics,), and T. Schuelke (Fraunhofer USA Center for Surface and Laser Processing) PDF
11:20688 Aggressive Monitoring of OSFs Using High Temperature Oxidation - K.-M. Bae, J.-R. Kim (Posco-Huls Co. Ltd.), D.-M. Lee (MEMC Electronic Materials, Inc.), S.-S. Kim, C.-G. Koh, and S.-H. Pyi (Hyundai Electronics Industries Co., Ltd.) PDF
11:40689 Formation and Annihilation of Epitaxial Stacking Faults Generated from Pre-Existing Nucleation Sites in Silicon - C.-R. Cho, K.Y. Noh, Y.S. Kim, D.H. Lee, C.W. Kim, S.W. Ko, D.H. Kim, C.B. Son, S.J. Kim, D.H. Cho, J.J. Choi, D.J. Kim (Fairchild Semiconductor Co.), K.M. Bae (Posco-Huls Co.), and G.A. Rozgonyi (North Carolina State University) PDF
12:00690 Bulk and Surface Properties of Cz-Silicon after Hydrogen Plasma Treatments - R. Job, A. Ulyashin, W. Fahrner (University of Hagen), V. Markevich, L. Murin (Institute of Solid State and Semiconductor Physics), and L. Lindstrom (University of Lund) PDF

Metallic Impurities in Silicon

Co-Chairs: D. Graef and M. Shabani

TimeAbs#TitleView
2:00691 Tin Doping Effects in Silicon - E. Simoen and C. Claeys (IMEC) PDF
2:30692 In-Situ Measurement of Iron in P-Type Silicon with the uw-PCD Technique - M. Porrini (MEMC Electronic Materials) and P. Tessariol (Universita di Padova) GIF
2:50693 Radial Distributions of Transition Metal Defects in Float Zone Silicon Crystals - H. Lemke (Technische Universitat Berlin), W. Zulehner (Wacker Siltronic AG), and B. Hallman (Institute of Crystal Growth) PDF
3:10 Twenty-Minute Intermission
3:30694 Progress in Understanding the Physics of Copper in Silicon - A. Istratov, C. Flink, S. Balasubramanian (University of California), H. Hieslmair (Lawrence Berkeley National Laboratory), E. Weber (University of California), S. McHugo (Lawrence Berkeley National Laboratory), H. Hedemann, M. Seibt, and W. Schroter (University of Goettingen) PDF
4:00695 Effect of Cobalt and Copper Contamination on the Electrical Properties of Processed Silicon - J. Benton, D. Jacobson, T. Boone, P. Silverman, C. Rafferty (Bell Laboratories, Lucent Technologies), S. Weinzierl, and B. Vu (KLA-Tencor) PDF
4:20696 Copper Stable Isotope Spike Method as A Tool for Low Temperature Out-Diffusion of Copper in P-Type Silicon - H.-J. Maeng, H.-S. Oh, and Y.-K. Hong (Posco-Huls Co. Ltd.) PDF
4:40697 Effect of Al on Oxide Growth and Oxide Charges in Silicon Wafers - H. Shimizu, M. Ikeda, C. Munakata, and N. Nagashima (Nihon University) GIF

Wednesday, October 25, 2000

Gettering Studies

Co-Chairs: C.L. Claeys and G.A. Rozgonyi

TimeAbs#TitleView
10:00698 Impact of Annealing Temperature and Cooling Rate on the Gettering of Fe by Polysilicon Backside - M.B. Shabani, Y. Shiina, and Y. Shimanuki (Mitsubishi Materials Co.) PDF
10:30699 300 mm EPI PP- Wafer: Is There Sufficient Gettering? - D. Graef, U. Lambert, R. Schmolke, R. Wahlich, W. Siebert, E. Daub, and W. von Ammon (Wacker Siltronic AG) PDF
10:50700 Influence of LSTD Size on the Formation of Denueded Zone in Hydrogen Annealed CZ Silicon Wafers - R. Takeda, T. Miami, H. Saito, Y. Hirano, H. Fujimori (Toshiba Ceramics Co., Ltd.), K. Kashima, and Y. Matsushita (Toshiba Ceramics Co., Ltd) PDF
11:10701 Integrated Gettering of Metalic Contaminants by Nanocavities in FZ Silicon Wafers - I. Perichaud, E. Yakimov, and S. Martinuzzi (University of Marseille) PDF
11:30702 On the Effect of the Precipitation on DRAM Device Yield - R. Winkler (Infineon Technologies) PDF
11:50703 Intrinsic Gettering in Nitrogen Doped Czochralski Crystal Silicon - D. Yang, Y. Shen, D. Tian, R. Fan, L. Li, and D. Que (Zhejiang University) PDF

Device Performance

Co-Chairs: H.R Huff and D.K. Schroder

TimeAbs#TitleView
1:45704 Trends in Lifetime Measurements - D. Schroder (Arizona State University) PDF
2:15705 Epitaxial Layer Lifetime Characterization in the Frequency Domain - J.-E. Park, D. Schroder, S.-E. Tan, B. Choi (Arizona State University), M. Fletcher, and A. Buczkowski (Mitsubishi America) PDF
2:35706 Minority Carrier Lifetime and Impurity Level Scan Map in Silicon - O. Palais, E. Yakimov, J.J. Simon, and S. Martinuzzi (University of Marseille) PDF
2:55707 Lifetime and Leakage Current Studies in Shallow p-n Junctions Fabricated in a Deep High-Energy Boron Implanted p-Well - A. Poyai, E. Simoen, C. Claeys, R. Rooyackers, G. Badenes (IMEC), and E. Gaubas (Vilnius University) PDF
3:15 Twenty-Minute Intermission
3:35708 Carrier Lifetime Control and Characterization of High-Resistivity Silicon Used for High-Power Devices - H.-J. Schulze (Siemens AG), A. Frohnmeyer (Munich University of Technology), F.-J. Niedernostheide (Siemens AG), F. Hille (Munich University of Technology), P. Tutto, T. Pavelka (Semilab), and G. Wachutka (Munich University of Technology) PDF
3:55709 Two-Dimensional Deistribution of Leakage Current in Ultrathin Oxide on Stepped Si Surface - M. Murata, N. Tokuda, D. Hojo, and K. Yamabe (University of Tsukuba) PDF
4:15710 The Gate Oxide Quality of Annealed CZ Silicon Wafers and Its Influence on 4M DRAM Device Yield and Reliability - R. Winkler (Infineon Technologies) PDF
4:35711 Investigation of GOI Test Methods on Silicon Surface Defect Failure Mechanisms - F. Gonzalez, R. Barbour, J. Hull (Micron Technology, Inc.), and M. Hider (Komatsu) PDF
4:55712 Gate Oxide Integrity Response as a Function of Near the Surface Crystal Defects Morphology - G. Borionetti, P. Godio, F. Bonoli, M. Cornara, R. Orizio, and R. Falster (MEMC Electronic Materials S.p.A.) PDF
5:15713 Impacting Device Performance and Yield Through Sacrificial Oxidation Improvements - S. Ambadi, K. Kamekona, D. Hannoun, P. Jeff, and G. Chang (ON Semiconductor) PDF
5:35714 On the Influence of the Interstitial Oxygen on DRAM Device Yield and Reliability - R. Winkler (Infineon Technologies) PDF
5:55715 A Process Simulation Model for the Effects Due to Nitridation of Oxides - Y.-S. Oh and D. Ward (Avant! Corporation) PDF

Thursday, October 26, 2000

Device Applications

Co-Chairs: E.R. Simoen and A.A. Istratov

TimeAbs#TitleView
8:00716 High Resistivity CZ Silicon for RF Applications Substituting GaAs - T. Abe and W. Qu (Shin-Etsu Handotai) GIF
8:30717 Surface and Bulk Properties of Oxygenated FZ Silicon Wafers for Particle Detector Applications - P. Bellutti, M. Boscardin, G.-F. Dalla Betta, L. Ferrario, P. Gregori, and Z. Nicola (ITC-Irst) PDF
8:50718 Intrinsic Defects in FZ Silicon Crystals and Their Impact on X-Ray PIN Sensor Parameters - H. Riemann, A. Luedge (Institute of Crystal Growth), and K. Schwerd (VacuTec Messtechnik GmbH) PDF
9:10719 SOI Wafer Fabrication by Atomic-Layer Cleaving - M. Current, I. Malik, S. Bedell, H. Kirk, and F. Henley (Silicon Genesis Corporation) PDF
9:30720 Effect of Material Properties on Stress-Induced Defect Generation in Trenched SOI - W.A. Nevin, K. Somasundram (BCO Technologies (NI) Ltd.), S. Blackstone (BCO America), S. Magee, and T. Paxton (Queen's University of Belfast) PDF
9:50721 A New Substrate Engineering Technique to Realized Silicon on Nothing (SON) Structure Utilizing Transformation of Sub-micron Trenches to Empty Space in Silicon (ESS) by Surface Migration - Y. Tsunashima, T. Sato, and I. Mizushima (Toshiba Corporation) PDF

Novel and Improved Characterization Techniques - I

Co-Chairs: R. Rai-Choudury and J.L. Benton

TimeAbs#TitleView
10:40722 Silicon Defect Characterization by Laplace Deep Level Transient Spectroscopy - T. Peaker (University of Manchester Institute of Science and Technology) PDF
11:10723 Surface-Separated Collection of Ionic Species for Ion-Chromatography Analysis on Silicon Wafers - K. Yanagi, H. Shibata, K. Nagai, and M. Watanabe (Komatsu Electronic Metals) PDF
11:30724 Photomagnetic Detection of Doping Inhomogeneities in Silicon Crystals Using SQUID Magnetometers - A. Luedge, H. Riemann (Institute of Crystal Growth), J. Beyer, and T. Schurig (Physikalisch-Technische Bundesanstalt Berlin) PDF
11:50725 The Measurement of Nitrogen in Silicon Substrates by SIMS - R.S. Hockett and D.B. Sams (Charles Evans and Associates) GIF
12:10726 Laser Spectroscopy Methods for Nondestructive Analysis of Thin Films - D. Milovzorov and N. Chigarev (Moscow State University) PDF

Novel and Improved Characterization Techniques - II

Co-Chairs: A. Peaker and P. Rai-Choudury

TimeAbs#TitleView
2:00727 Impact of the Purity of Silicon on the Evolution of Ion Beam Generated Defects: from Research to Technology - V. Privitera (IMETEM - CNR) PDF
2:30728 Microscopic Characterization of Electrochemical Properties of Silicon Wafer Surfaces - T. Homma, T. Kono, T. Osaka (Waseda University), M. Watanabe, and K. Nagai (Komatsu Electronic Metals) PDF
3:00 Twenty-Minute Intermission
3:20729 Use of Diode Diagnostics for Silicon Wafer Quality Characerization. Effect of COP on pn Junction Leakage - H. Kubota (Toshiba Ceramics Co.,Ltd.), H. Nagano, J. Sugamoto, H. Matsushita, M. Oose, and S. Nitta (Toshiba Co. Ltd.) PDF
3:50730 Crystal Defect Information Obtained by Multiple Wafer Recleaning - L. MuleStagno, S. Keltner (MEMC Electronic Materials Inc.), R. Yalamanchili (SCP Global Technologies), M. Kulkarni, J. Libbert, and M. Banan (MEMC Electronic Materials Inc.) PDF
4:10731 Resonance Ultrasonic Diagnostics of As-Grown and Process-Induced Defects in Cz-Si - A. Belyaev, I. Tarasov, S. Ostapenko (University of South Florida), S. Koveshnikov (SHE America, Inc), A.E. Belayev, and V.A. Kochelap (Institute of Semiconductor Physics, NASU) PDF
4:30732 Deposition Mechanism of Trace Metals on Silicon Wafer Surfaces in Ultra Pure Water - T. Homma, J. Tsukano, T. Osaka (Waseda University), M. Watanabe, and K. Nagai (Komatsu Electronic Metals) PDF
4:50733 A Study on “Twin” <100> Square Hillock Silicon Crystalline Defects on Silicon Substrate in Wafer Fabrication using 155 Wright Etch - H. Younan (Chartered Semiconductor Mfg Ltd) PDF
5:10734 Reflection of Electromagnetic Waves from a Rough Surface - R. Sabet-Dariani (Azzahra, Co.) PDF