Co-Chairs: M. Watanabe and P. Stallhofer
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 671 | Advanced Silicon Wafers for 0.18 um Design Rule and Beyond: EPI and Flash! - R. Schmolke, M. Blietz, R. Schauer, D. Zemke, H. Oelkrug, and W. von Ammon (Wacker Siltronic AG) | |
| 2:30 | 672 | The Time Dependence of Point Defect Behavior near the Growth Interface in Cz-Si - B.M. Park and I.S. Choi (LG Siltron Inc.) | |
| 2:50 | 673 | Effect of the Shape of Crystal-Melt Interface on Point Defect Reaction in Silicon Crystals - K. Nakamura, S. Maeda, S. Togawa, T. Saishoji, and J. Tomioka (Komatsu Electronic Metals Co., Ltd.) | GIF |
| 3:10 | Twenty-Minute Intermission | ||
| 3:30 | 674 | High Pull Speed for Fast Pulled Crystal in CZ Growth - H.J. Oh, J.H. Wang, K.-M. Kim, and H.-D. Yoo (LG Siltron) | |
| 3:50 | 675 | Micro-Fluctuation of Growth-Rate and Grown-In Defect Distribution in CZ-Si - J. Fukuda, M. Hasebe, T. Iwasaki, H. Harada (NSC Electron Corporation), and M. Tanaka (Nippon Steel Corporation) | |
| 4:10 | 676 | Direct Proof of Argon Atoms Incorporation into High-Purity Silicon Single Crystals during Growth in Argon Gas Ambient - A. Ulyashin, R. Job, W. Fahrner (University of Hagen), A. Mudryi, A. Patuk, and I. Shakin (Belarussian Academy of Science) | |
| 4:30 | 677 | Nucleation of Void Defects in CZ Silicon - Y. Yamanaka, K. Tanahashi, T. Mikayama, N. Inoue. (Osaka Prefecture University), and A. Mori (The University of Tokushima) | |
| 4:50 | 678 | The Formation Mechanism for Coupled Voids in Czochralski Grown Silicon Crystals - F. Ishikawa, S. Sadohara, T. Saishoji, K. Nakamura, and J. Tomioka (Komatsu Electronic Metals Co., Ltd.) | GIF |
| 5:10 | 679 | Valence Force Field Analysis of Nitrogen in Silicon - H. Harada, K. Tanahashi (RIAST, Osaka Prefecture University), A. Koukitsu (Tokyo University of Agriculture and Technology), and N. Inoue (RIAST, Osaka Prefecture University) |
Co-Chairs: B. Sopori and T. Abe
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:00 | 680 | Silicon Float-Zone Crystal Growth as a Tool For the Study of Defects and Impurities - T.F. Ciszek and T.H. Wang (National Renewable Energy Laboratory) | |
| 8:30 | 681 | Transient Simulation of Grown-in Defect Dynamics in Czochralski Crystal Growth of Silicon - T. Mori, Z. Wang, and R. Brown (Massachusetts Institute of Technology) | |
| 8:50 | 682 | Detection of Oxygen-Related Defects in Silicon Wafers by Highly Selective Reactive Ion Etching - K. Nakashima, Y. Watanabe, T. Yoshida, and Y. Mitsushima (Toyota Central R&D Labs., Inc) | |
| 9:10 | 683 | Misfit Dislocation Nucleation Study in P/P+ Si - P. Feichtinger, M.S. Goorsky (UCLA), D. Oster, T. D'Silva (Wacker Siltronic Corp.), and J. Moreland (Wacker Siltronic AG) | |
| 9:30 | 684 | Screening of Dislocations in Silicon by Point Defects - I. Peidous (The University of the West Indies) and K. Loiko (Dallas Semiconductor Corporation) | |
| 9:50 | 685 | Vacancy-Nitrogen Complexes in Float-Zone Silicon - F. Quast, P. Pichler (Fraunhofer Institut fuer Integrierte Schaltungen, Bauelementetechnologie), H. Ryssel (Universitaet Erlangen-Nuernberg), and R. Falster (MEMC Electronic Materials SpA) | |
| 10:10 | Twenty-Minute Intermission | ||
| 10:30 | 686 | Oxygen Precipitation Behavior and Its Optimum Condition for Internal Gettering and Mechanical Strength in Polished and Epitaxial Silicon Wafers - K. Sueoka, M. Akatsuka (Sumimto Metal Industries), T. Ono, E. Asayama, Y. Koike, N. Adachi, S. Sadamitsu, H. Katahama, and H. Katahama (Sumimoto Metal Industries) | GIF |
| 11:00 | 687 | Threshold Stresses of Dislocation Generation Onset in Silicon - I. Peidous (The University of the West Indies), K. Loiko (Dallas Semiconductor Corporation), N. Balasubramanian (Institute of Microelectronics,), and T. Schuelke (Fraunhofer USA Center for Surface and Laser Processing) | |
| 11:20 | 688 | Aggressive Monitoring of OSFs Using High Temperature Oxidation - K.-M. Bae, J.-R. Kim (Posco-Huls Co. Ltd.), D.-M. Lee (MEMC Electronic Materials, Inc.), S.-S. Kim, C.-G. Koh, and S.-H. Pyi (Hyundai Electronics Industries Co., Ltd.) | |
| 11:40 | 689 | Formation and Annihilation of Epitaxial Stacking Faults Generated from Pre-Existing Nucleation Sites in Silicon - C.-R. Cho, K.Y. Noh, Y.S. Kim, D.H. Lee, C.W. Kim, S.W. Ko, D.H. Kim, C.B. Son, S.J. Kim, D.H. Cho, J.J. Choi, D.J. Kim (Fairchild Semiconductor Co.), K.M. Bae (Posco-Huls Co.), and G.A. Rozgonyi (North Carolina State University) | |
| 12:00 | 690 | Bulk and Surface Properties of Cz-Silicon after Hydrogen Plasma Treatments - R. Job, A. Ulyashin, W. Fahrner (University of Hagen), V. Markevich, L. Murin (Institute of Solid State and Semiconductor Physics), and L. Lindstrom (University of Lund) |
Co-Chairs: D. Graef and M. Shabani
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 691 | Tin Doping Effects in Silicon - E. Simoen and C. Claeys (IMEC) | |
| 2:30 | 692 | In-Situ Measurement of Iron in P-Type Silicon with the uw-PCD Technique - M. Porrini (MEMC Electronic Materials) and P. Tessariol (Universita di Padova) | GIF |
| 2:50 | 693 | Radial Distributions of Transition Metal Defects in Float Zone Silicon Crystals - H. Lemke (Technische Universitat Berlin), W. Zulehner (Wacker Siltronic AG), and B. Hallman (Institute of Crystal Growth) | |
| 3:10 | Twenty-Minute Intermission | ||
| 3:30 | 694 | Progress in Understanding the Physics of Copper in Silicon - A. Istratov, C. Flink, S. Balasubramanian (University of California), H. Hieslmair (Lawrence Berkeley National Laboratory), E. Weber (University of California), S. McHugo (Lawrence Berkeley National Laboratory), H. Hedemann, M. Seibt, and W. Schroter (University of Goettingen) | |
| 4:00 | 695 | Effect of Cobalt and Copper Contamination on the Electrical Properties of Processed Silicon - J. Benton, D. Jacobson, T. Boone, P. Silverman, C. Rafferty (Bell Laboratories, Lucent Technologies), S. Weinzierl, and B. Vu (KLA-Tencor) | |
| 4:20 | 696 | Copper Stable Isotope Spike Method as A Tool for Low Temperature Out-Diffusion of Copper in P-Type Silicon - H.-J. Maeng, H.-S. Oh, and Y.-K. Hong (Posco-Huls Co. Ltd.) | |
| 4:40 | 697 | Effect of Al on Oxide Growth and Oxide Charges in Silicon Wafers - H. Shimizu, M. Ikeda, C. Munakata, and N. Nagashima (Nihon University) | GIF |
Co-Chairs: C.L. Claeys and G.A. Rozgonyi
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 698 | Impact of Annealing Temperature and Cooling Rate on the Gettering of Fe by Polysilicon Backside - M.B. Shabani, Y. Shiina, and Y. Shimanuki (Mitsubishi Materials Co.) | |
| 10:30 | 699 | 300 mm EPI PP- Wafer: Is There Sufficient Gettering? - D. Graef, U. Lambert, R. Schmolke, R. Wahlich, W. Siebert, E. Daub, and W. von Ammon (Wacker Siltronic AG) | |
| 10:50 | 700 | Influence of LSTD Size on the Formation of Denueded Zone in Hydrogen Annealed CZ Silicon Wafers - R. Takeda, T. Miami, H. Saito, Y. Hirano, H. Fujimori (Toshiba Ceramics Co., Ltd.), K. Kashima, and Y. Matsushita (Toshiba Ceramics Co., Ltd) | |
| 11:10 | 701 | Integrated Gettering of Metalic Contaminants by Nanocavities in FZ Silicon Wafers - I. Perichaud, E. Yakimov, and S. Martinuzzi (University of Marseille) | |
| 11:30 | 702 | On the Effect of the Precipitation on DRAM Device Yield - R. Winkler (Infineon Technologies) | |
| 11:50 | 703 | Intrinsic Gettering in Nitrogen Doped Czochralski Crystal Silicon - D. Yang, Y. Shen, D. Tian, R. Fan, L. Li, and D. Que (Zhejiang University) |
Co-Chairs: H.R Huff and D.K. Schroder
| Time | Abs# | Title | View |
|---|---|---|---|
| 1:45 | 704 | Trends in Lifetime Measurements - D. Schroder (Arizona State University) | |
| 2:15 | 705 | Epitaxial Layer Lifetime Characterization in the Frequency Domain - J.-E. Park, D. Schroder, S.-E. Tan, B. Choi (Arizona State University), M. Fletcher, and A. Buczkowski (Mitsubishi America) | |
| 2:35 | 706 | Minority Carrier Lifetime and Impurity Level Scan Map in Silicon - O. Palais, E. Yakimov, J.J. Simon, and S. Martinuzzi (University of Marseille) | |
| 2:55 | 707 | Lifetime and Leakage Current Studies in Shallow p-n Junctions Fabricated in a Deep High-Energy Boron Implanted p-Well - A. Poyai, E. Simoen, C. Claeys, R. Rooyackers, G. Badenes (IMEC), and E. Gaubas (Vilnius University) | |
| 3:15 | Twenty-Minute Intermission | ||
| 3:35 | 708 | Carrier Lifetime Control and Characterization of High-Resistivity Silicon Used for High-Power Devices - H.-J. Schulze (Siemens AG), A. Frohnmeyer (Munich University of Technology), F.-J. Niedernostheide (Siemens AG), F. Hille (Munich University of Technology), P. Tutto, T. Pavelka (Semilab), and G. Wachutka (Munich University of Technology) | |
| 3:55 | 709 | Two-Dimensional Deistribution of Leakage Current in Ultrathin Oxide on Stepped Si Surface - M. Murata, N. Tokuda, D. Hojo, and K. Yamabe (University of Tsukuba) | |
| 4:15 | 710 | The Gate Oxide Quality of Annealed CZ Silicon Wafers and Its Influence on 4M DRAM Device Yield and Reliability - R. Winkler (Infineon Technologies) | |
| 4:35 | 711 | Investigation of GOI Test Methods on Silicon Surface Defect Failure Mechanisms - F. Gonzalez, R. Barbour, J. Hull (Micron Technology, Inc.), and M. Hider (Komatsu) | |
| 4:55 | 712 | Gate Oxide Integrity Response as a Function of Near the Surface Crystal Defects Morphology - G. Borionetti, P. Godio, F. Bonoli, M. Cornara, R. Orizio, and R. Falster (MEMC Electronic Materials S.p.A.) | |
| 5:15 | 713 | Impacting Device Performance and Yield Through Sacrificial Oxidation Improvements - S. Ambadi, K. Kamekona, D. Hannoun, P. Jeff, and G. Chang (ON Semiconductor) | |
| 5:35 | 714 | On the Influence of the Interstitial Oxygen on DRAM Device Yield and Reliability - R. Winkler (Infineon Technologies) | |
| 5:55 | 715 | A Process Simulation Model for the Effects Due to Nitridation of Oxides - Y.-S. Oh and D. Ward (Avant! Corporation) |
Co-Chairs: E.R. Simoen and A.A. Istratov
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:00 | 716 | High Resistivity CZ Silicon for RF Applications Substituting GaAs - T. Abe and W. Qu (Shin-Etsu Handotai) | GIF |
| 8:30 | 717 | Surface and Bulk Properties of Oxygenated FZ Silicon Wafers for Particle Detector Applications - P. Bellutti, M. Boscardin, G.-F. Dalla Betta, L. Ferrario, P. Gregori, and Z. Nicola (ITC-Irst) | |
| 8:50 | 718 | Intrinsic Defects in FZ Silicon Crystals and Their Impact on X-Ray PIN Sensor Parameters - H. Riemann, A. Luedge (Institute of Crystal Growth), and K. Schwerd (VacuTec Messtechnik GmbH) | |
| 9:10 | 719 | SOI Wafer Fabrication by Atomic-Layer Cleaving - M. Current, I. Malik, S. Bedell, H. Kirk, and F. Henley (Silicon Genesis Corporation) | |
| 9:30 | 720 | Effect of Material Properties on Stress-Induced Defect Generation in Trenched SOI - W.A. Nevin, K. Somasundram (BCO Technologies (NI) Ltd.), S. Blackstone (BCO America), S. Magee, and T. Paxton (Queen's University of Belfast) | |
| 9:50 | 721 | A New Substrate Engineering Technique to Realized Silicon on Nothing (SON) Structure Utilizing Transformation of Sub-micron Trenches to Empty Space in Silicon (ESS) by Surface Migration - Y. Tsunashima, T. Sato, and I. Mizushima (Toshiba Corporation) |
Co-Chairs: R. Rai-Choudury and J.L. Benton
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:40 | 722 | Silicon Defect Characterization by Laplace Deep Level Transient Spectroscopy - T. Peaker (University of Manchester Institute of Science and Technology) | |
| 11:10 | 723 | Surface-Separated Collection of Ionic Species for Ion-Chromatography Analysis on Silicon Wafers - K. Yanagi, H. Shibata, K. Nagai, and M. Watanabe (Komatsu Electronic Metals) | |
| 11:30 | 724 | Photomagnetic Detection of Doping Inhomogeneities in Silicon Crystals Using SQUID Magnetometers - A. Luedge, H. Riemann (Institute of Crystal Growth), J. Beyer, and T. Schurig (Physikalisch-Technische Bundesanstalt Berlin) | |
| 11:50 | 725 | The Measurement of Nitrogen in Silicon Substrates by SIMS - R.S. Hockett and D.B. Sams (Charles Evans and Associates) | GIF |
| 12:10 | 726 | Laser Spectroscopy Methods for Nondestructive Analysis of Thin Films - D. Milovzorov and N. Chigarev (Moscow State University) |
Co-Chairs: A. Peaker and P. Rai-Choudury
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 727 | Impact of the Purity of Silicon on the Evolution of Ion Beam Generated Defects: from Research to Technology - V. Privitera (IMETEM - CNR) | |
| 2:30 | 728 | Microscopic Characterization of Electrochemical Properties of Silicon Wafer Surfaces - T. Homma, T. Kono, T. Osaka (Waseda University), M. Watanabe, and K. Nagai (Komatsu Electronic Metals) | |
| 3:00 | Twenty-Minute Intermission | ||
| 3:20 | 729 | Use of Diode Diagnostics for Silicon Wafer Quality Characerization. Effect of COP on pn Junction Leakage - H. Kubota (Toshiba Ceramics Co.,Ltd.), H. Nagano, J. Sugamoto, H. Matsushita, M. Oose, and S. Nitta (Toshiba Co. Ltd.) | |
| 3:50 | 730 | Crystal Defect Information Obtained by Multiple Wafer Recleaning - L. MuleStagno, S. Keltner (MEMC Electronic Materials Inc.), R. Yalamanchili (SCP Global Technologies), M. Kulkarni, J. Libbert, and M. Banan (MEMC Electronic Materials Inc.) | |
| 4:10 | 731 | Resonance Ultrasonic Diagnostics of As-Grown and Process-Induced Defects in Cz-Si - A. Belyaev, I. Tarasov, S. Ostapenko (University of South Florida), S. Koveshnikov (SHE America, Inc), A.E. Belayev, and V.A. Kochelap (Institute of Semiconductor Physics, NASU) | |
| 4:30 | 732 | Deposition Mechanism of Trace Metals on Silicon Wafer Surfaces in Ultra Pure Water - T. Homma, J. Tsukano, T. Osaka (Waseda University), M. Watanabe, and K. Nagai (Komatsu Electronic Metals) | |
| 4:50 | 733 | A Study on “Twin” <100> Square Hillock Silicon Crystalline Defects on Silicon Substrate in Wafer Fabrication using 155 Wright Etch - H. Younan (Chartered Semiconductor Mfg Ltd) | |
| 5:10 | 734 | Reflection of Electromagnetic Waves from a Rough Surface - R. Sabet-Dariani (Azzahra, Co.) |