Co-Chairs: Y. Kuo and M. Hack
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 759 | Advances in LCDs with Glass and Plastic Substrates - E. Lueder (University of Stuttgart) | |
| 10:30 | 760 | Short Histry of Thin-Film Transistor Research in Tokyo Institute of Technology - M. Matsumura (Tokyo Institute of Technology) |
Co-Chairs: M. Matsumura and A. van Calster
| Time | Abs# | Title | View |
|---|---|---|---|
| 11:00 | 761 | ECR-PECVD of Silicon Nitride and Hydrogenated Amorphous Silicon at 80 oC for TFTs - A. Flewitt, A. Dyson, J. Robertson, and W. Milne (University of Cambridge) | |
| 11:20 | 762 | Amorphous Silicon Thin-Film Transistors Fabricated with a New Copper Etching Method - Y. Kuo, S.Y. Lee, S. Lee, J.P. Donnelly, J.-Y. Tewg, and H.H. Lee (Texas A&M University) | |
| 11:40 | 763 | Fabrication of Microcrystalline Silicon Thin Film Transistors Using Electron Cyclotron Resonance Plasma Approach - A. Krishnan, S. Bae, and S. Fonash (The Pennsylvania State University) |
Co-Chairs: A. van Calster and M. Matsumura
| Time | Abs# | Title | View |
|---|---|---|---|
| 1:45 | 764 | Microcrystalline Silicon TFTs for Multiplexing AMLCDs - I. French (Philips Research Laboratories), P. Roca i Cabarrocas (Ecole Polytechnique, Palaiseau), S. Deane (Philips Research Laboratories), R. Wehrspohn (Max-Planck-Institute for Microstructure Physics), and M. Powell (Philips Research Laboratories) | |
| 2:15 | 765 | Use OF 120oC n+-mc-Si:H in Low Temperature TFT Fabrication - T. Charania, A. Sazonov, and A. Nathan (University of Waterloo) | |
| 2:35 | 766 | Low Temperature \langle 200oC PECVD Films for Large Area Electronics - R. Cross, O. Buiu, M. Manhas, F. Clough, and S. Madathil (De Montfort University) | |
| 2:55 | 767 | Process Considerations for Small Area a-Si:H Vertical Thin Film Transistors - I. Chan, B. Park, A. Sazonov, and A. Nathan (University of Waterloo) |
Co-Chairs: D. Ast and M.K. Han
| Time | Abs# | Title | View |
|---|---|---|---|
| 3:30 | 768 | Future Trends in Low Temperature Poly-Si TFT-LCD by Excimer Laser Anneal - S. Uchikoga (Toshiba Corporation) | |
| 4:00 | 769 | Low Temperature Process Technologies and "Process Integration" for High Performance Polycrystalline Silicon Thin-Film Transistors - S. Higashi (Seiko Epson Corp) | |
| 4:30 | 770 | Laser Processing for Amorphous Si Air-Gap TFTs - P. Mei, J. Ho, Y. Wang, R. Lau, B. Street, J. Boyce, and J. Lu (Xerox Palo Alto Research Center) | |
| 4:50 | 771 | Full Optimized Process of Polysilicon TFT's Using Very Large Excimer Laser - Y. Helen, G. Gautier, K. Mourgues, T. Mohammed-Brahim, F. Raoult, O. Bonnaud (University of Rennes I), C. Prat, D. Zahorski (SOPRA S.A.), and D. Lemoine (INSA) |
Co-Chairs: E. Lueder and S. Higashi
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:30 | 772 | Polycrystalline Silicon Thin Film Transistors Free from Large Angle Grain Boundaries - M. Maekawa, Y. Nakamura, Y. Umenaka, J. Takagi, and M. Hijikigawa (SHARP Corporation) | |
| 9:00 | 773 | Low Temperature p-Channel Poly-Si TFT for AMLCD - Y.-M. Ha, J.-C. Yeo, H.-S. Choi, and D.-G. Kim (LG.Philips LCD Co., LTD) | |
| 9:30 | 774 | Interface Quality and Conduction Mechanism of Poly-Si/Al2O3/Si MOS System - K.-Y. Lim, D.-G. Park, H.-J. Cho, I.-S. Yeo, J.-S. Roh, and J.W. Park (Hyundai Electronics Co., Ltd.) | |
| 9:50 | 775 | High Performance Low Temperature Polysilicon TFTs with Ultra-Thin Liquid-Phase Deposited Gate Oxide and N2O Plasma Treatment - C.-F. Yeh, S.-C. Wang, J.-N. Jeng, and C.-Y. Lu (National Chiao-Tung University) |
Co-Chairs: S.J. Fonash and I. French
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:25 | 776 | Silicide Mediated Crystallization of Patterned Amorphous Silicon in the Electric Field - S.J. Park, K.H. Kim, B.R. Cho, A.Y. Kim, S.Y. Yoon, and J. Jang (TFT-LCD National lab.) | |
| 10:45 | 777 | Metal-Induced Solid Phase Crystallization of Amorphous Silicon Films on Plastic Substrates - S. Bae, Y. Lee, A. Krishnan, and S. Fonash (The Pennsylvania State University) | |
| 11:05 | 778 | Two-Dimensionally Controlled Ultra-Large Grain Growth Based on Phase-Modulated Excimer-Laser Crystallization Method - M. Nakata and M. Matsumura (Tokyo Institute of Technology) | |
| 11:25 | 779 | The Lateral Grain Growth of ELA poly-Si by Employing Selective Melting and Lateral Heat Sink - J.-H. Jeon, M.-C. Lee, J.-W. Park, and M.-K. Han (Seoul National University) | |
| 11:45 | 780 | Novel Wet Taper Etching of Interconnects on Large Area Substrates Using Galvanic Reaction - T. Kaneko, Y. Hashimoto, K. Ono (Hitachi, Ltd.,Displays), K. Fujii, and K. Onisawa (Hitachi, Ltd.) |
Co-Chairs: I. French and S.J. Fonash
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 781 | Annealing System for AMLCDs: 15Joules / 200ns Excimer Laser Pulse for High-Performances and Uniform TFT - C. Prat (SOPRA S.A.), D. Zahorski (SOPRA S.A), Y. Helen, T. Mohammed-Brahim, and O. Bonnaud (Universite de Rennes1) | |
| 2:20 | 782 | High Quality Silicon Oxide Deposited with a Multipolar Electron Cyclotron Resonance Plasma Source - G.I. Isai, A.Y. Kovalgin, J. Holleman, P.H. Woerlee, and H. Wallinga (Twente University) | |
| 2:40 | 783 | Effects of NH3N2 Plasma Treatment on Very Low Temperature (100OC) Oxides - C.-H. Kim, S.-H. Jung, W.-J. Nam, and M.-K. Han (Seoul National University) | |
| 3:00 | 784 | Local Electroless Deposition of Thin Films for Electronics - T.N. Khoperia (Georgian Academy of Sciences) |
Co-Chairs: F. Okumura and A. Nathan
| Time | Abs# | Title | View |
|---|---|---|---|
| 3:35 | 785 | Mechanisms Underlying the Off Characteristics of a-Si:H Thin-Film Transistors - P. Servati and A. Nathan (University of Waterloo) | |
| 3:55 | 786 | Analysis of the Leakage Current of Poly-Si TFT Using Counter-Doping Process - J.-Y. Yang, S.-H. Yu, and J.-H. Kim (LG.Philips LCD Inc.) | |
| 4:15 | 787 | Low Temperature Poly-Si TFT with Lateral Body Terminal for Stability Improvement - J.S. Yoo, M.-C. Lee, I.-H. Song, and M.-K. Han (Seoul National University) | |
| 4:35 | 788 | Nature of the Low Frequency Noise in CdSe Thin-Film Transistors - M.J. Deen (McMaster University), S.L. Rumyantsev (Ioffe Institute of Russian Academy of Science), I. Glick (Litton Systems Canada), A. Smozh (Remec-Nanowave Inc.), M. Westcott (Westaim Advanced Display Technologies), and D. Waechter (Sensor Technology Ltd.) |
Co-Chairs: Y. Kuo and D.J. Ast
| Time | Abs# | Title | View |
|---|---|---|---|
| 7:30 | Panel Discussion, "21st Century TFT Technology Trend" |
Co-Chairs: J. Jang and M. Maekawa
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 789 | Defect Reduction Technologies used to Improve Characteristic of Polycrystalline Silicon Thin Film Transistors - Y. Tsunoda, T. Samesima (Tokyo University of Agriculture and Technology), and S. Higashi (SEIKO Epson Corporation) | GIF |
| 10:20 | 790 | Poly-Si Thin Film Transistors on Glass-Ceramic Substrates - S. Krasulya, N. Nemchuk, D. Ast (Cornell University), and G. Couillard (Corning Incorporated) | |
| 10:40 | 791 | A Novel Fabrication Technology for Si TFTs on Flexible Substrates - Y. Lee, S. Bae, and S. Fonash (The Pennsylvania State University) | |
| 11:00 | 792 | Structural Differences Between Deuterated and Hydrogenated Silicon Nitride/Oxynitide - A. Shih, S.-C. Lee, T.R. Yang, and C.C. Lu (National Taiwan University) | |
| 11:20 | 793 | Highly Packed and Ultra-Large Si Grains Grown by a Single-Shot Irradiation of Excimer-Laser Light Pulse - Y. Sano, W.-C. Yeh, and M. Matsumura (Tokyo Institute of Technology) | |
| 11:40 | 794 | Low-Pressure CVD of Germanium-Silicon Films Using Silane and Germane Sources - A. Kovalgin, J. Holleman, C. Salm, and P. Woerlee (MESA+ Research Institute, University of Twente) |
Co-Chairs: M. Maekawa and J. Jang
| Time | Abs# | Title | View |
|---|---|---|---|
| 1:30 | 795 | Unhydrogenated Polycrystalline Silicon-Germanium Thin Film Transistors by LPCVD - G. Denis, H. Youri, R. Regis, S. Michel, and B. Olivier (Universite de Rennes 1) | |
| 1:50 | 796 | Glow-Discharge Sputtered Si Films for High Quality Poly-Si TFT's - T. Serikawa (NTT Electronics Co.) | GIF |
Co-Chairs: M. Shur and S. Uchikoga
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:10 | 797 | Flat Panel X-Ray Image Detectors for Medical Imaging Applications - Y. Yamane, Y. Izumi, F. Funada (Sharp Corporation), S. Adachi, and S. Yamada (Shimadzu Corporation) | |
| 2:40 | 798 | Analog Addressed Microdisplays - A. Van Calster (ELIS-TFCG/IMEC) | |
| 3:10 | Fifteen-Minute Intermission | ||
| 3:25 | 799 | A Conductivity Modulated High Voltage Poly-Si TFT with Buffer Zone - Y.Z. Xu, F. Clough, M. DeSouza, and S. Narayanan (De Montfort University) | |
| 3:45 | 800 | Polysilicon Thin Film Transistor Development for Smart Power Application - Y. Wu, F. Robb (On Semiconductor), J. Shen (University of Michigan - Dearborn), S. Robb, and K. Kamekona (On Semiconductor) | |
| 4:05 | 801 | Polysilicon Thin Film Transistor and EEPROM Characteristics for Three Dimensional Memory - J. Lindsey and T.S. Kalkur (University of Colorado at Colorado Springs) | |
| 4:25 | 802 | Active Pixel TFT Array for Digital Imaging Applications - K.S. Karim and A. Nathan (University of Waterloo) |