198th Meeting - Phoenix, Arizona

October 22-27, 2000

PROGRAM INFORMATION

M3 - Electronics/Dielectric Science and Technology Joint General Session

Electronics Division/ Dielectric Science and Technology Division

Wednesday, October 25, 2000

Yuma 26

Co-Chairs: R.K. Ulrich and R.L. Opila

TimeAbs#TitleView
1:30803 A New Approach to Enhance the Deuterium Annealing Process for Reliability Improvement in MOS Devices - K. Cheng, J. Lee, and J.W. Lyding (University of Illinois at Urbana-Champaign) PDF
1:45804 Effects of Gate Oxynitride with Heavy Nitridation on Plasma Process Induced Reliability Degradation in Metal-Oxide-Semiconductor Devices - P.-J. Tzeng, C.-C. Yeh, and K.-S. Chang-Liao (National Tsing Hua University) PDF
2:00805 Improved Electric Property in Metal-Oxide-Si Devices by Amorphous-Si Gate Electrode and Two-Step Nitridation - K.-S. Chang-Liao (National Tsing Hua University) PDF
2:15806 Formation of Interfacial Oxide at Si/Si3N4 Interface by N2O Post Annealing - L. Wenhe, P. Kin Leong (National University of Singapore), D. Zhong, C. Yew Meng, Simon, Z. Mei Sheng, A. Ting Cheong, L. Wai Sing, and G. Henry (Chartered Semiconductor Manufacturing, Ltd.) PDF
2:30807 Interface Conditioning and Growth Studies of Silicon Nitride Dielectric Layers - D. Jacques, J.L. Regolini, J. Couvert, and K. Barla (STMicroelectronics) PDF
2:45808 Effect of Annealing on the Properties of Sub 20A Thick Ultra-Thin RTCVD Silicon Nitride Stack Gate Dielectrics - J. Jeon (AMD) PDF
3:00 Fifteen-Minute Intermission
3:15809 Stress Field Dependence of the Silicon Oxidation Rate - H. Noma, H. Fujioka (University of Tokyo), Y. Baba (Japan Atomic Energy Research Institute), and M. Oshima (University of Tokyo) PDF
3:30810 Application of SEC Factors in Energy-Dispersive X-Ray Quantification Analysis of Silicon Oxide (SiO2) Layer in Wafer Fabrication - H. Younan (Chartered Semiconductor Mfg Ltd) PDF
3:45811 MeFINS Structure Capacitors for FET Type Ferroelectric Memory Applications - J. Kim, T. Kim, H.-S. Min, J.-M. Koo, W. Lee, and J.-G. Lee (Kookmin University) PDF
4:00812 Enhanced Electrical Properties of Al doped Ta2O5 Thin Films for Microelectronic Applications - P. Joshi and M. Cole (U.S. Army Research Laboratory) PDF
4:15813 Doped Tantalum Oxide High K Dielectric Thin Films - Y. Kuo, J. Donnelly, and J.-Y. Tewg (Texas A&M University,) PDF
4:30814 The Effect of La Doping on the Materials Properties of Ba1-xSrxTiO3 Thin Films for Tunable Device Applications - M. Cole, P. Joshi, E. Ngo, C. Hubbard, R. Pfeffer, M. Ervin, and M. Wood (U.S. Army Research Laboratory) PDF

Thursday, October 26, 2000

Co-Chairs: C.L. Claeys and K.B. Sundaram

TimeAbs#TitleView
8:30815 Analysis of Analog Capacitor for Mixed Signal Circuits in MDL (Merged DRAM-Logic) Devices - M.G. Jang, E.M. Huh, G. Lim, J.H. Cha, J.H. Lee, and D.H. Lee (HYUNDAI Electronics Industries Co., Ltd.) PDF
8:45816 Fatigue and Retention after Fatigue Performance of PZT Based Ferroelectric Memories - D. Hadnagy, D. Dalton, and S. Sun (Ramtron Int.) PDF
9:00817 Hydrogen Degredation Resistance of Doped Pt. Top Electrode for Ferroelectic Thin Films - F. Zhang and S.T. Hsu (Sharp) GIF
9:15818 Microstructure and Abnormal Electrical Properties of Excess PbO Doped PLT Thin Films - C. Lin, Z. Song (Chinese Academy of Sciences), S.X. Wang, and L.M. Wang (The University of Michigan) PDF
9:30 Fifteen-Minute Intermission
9:45819 An Examination of the Role of Dopants and Additives in ZnO-Based Varistors - N. Stelzer, A. Lorenz, J. Ott (Osterreichisches Forschungszentrum Seibersdorf), M. Harrer, M. Engler, E.A. Preissner, A.H. Whitehead, and M. Schreiber (Funktionswerkstoffe F & E GmbH) PDF
10:00820 New Chemical Routes to ZnO-Based Varistors - M. Schreiber (Funktionswerkstoffe F & E GmbH), A. Lorenz, J. Ott (Osterreichisches Forschungszentrum Seibersdorf), E.A. Preissner, and A.H. Whitehead (Funktionswerkstoffe F & E GmbH) PDF
10:15821 Studies & Elimination of Filed Oxide Trenching in Wafer Fabrication - E.C. Low, L.H. An, Y.N. Hua, and C.T. Tay (Chartered Semiconductor Mfg Ltd.) PDF
10:30822 Voltammetric Investigations of Supramolecular Structure in Two-Dimensional Dielectric Coatings - R.S. Clegg (California Institute of Technology), S.M. Reed (University of Oregon), R.K. Smith (The Pennsylvania State University), and J.E. Hutchison (University of Oregon) PDF
10:45823 The Relative Roles of Self-Assembled Organic Monolayers and Vacuum Contamination in the HF Vapor Etch Rate Enhancement of SiO2 - S.-J. Yang and M.N. Kozicki (Arizona State University) PDF
11:00824 Photosensitive Polyimide Stabilized at Reduced Temperatures for System-on-a-Chip Solutions - W. Feil, E. Prack, D. White, I. Adhihetty, K. Barror, and R. Liu (Motorola Semiconductor Products Sector) GIF

Co-Chairs: M.J. Deen and W.D. Brown

TimeAbs#TitleView
1:30825 Novel Technique to Enhance Etch Selectivity of Carbon ARC Over PR Based on O2/CHF3/Ar Gas Chemistry - J. Hong, J.-S. Jeon, Y.-B. Kim, and T.-H. Ahn (Samsung Electronics) PDF
1:45826 Extendibility of C4F8 Based Contact Etch in Merie Etcher for Subquarter-Micron ULSI Technology - S. Ianovitch (Silicon Manufacturing Partners Pte Ltd.) PDF
2:00827 Precisely CD-Controlled Gate Etching Using UHF-ECR Plasma - M. Mori, N. Itabashi, Y. Goto, T. Fujii (Hitachi, Ltd.), M. Yoshigai (Hitachi Techno Eng. Co., Ltd.), M. Kojima (Hitachi, Ltd.), K. Okamoto (Hitachi ULSI Systems Co. Ltd.), K. Tsujimoto, and S. Tachi (Hitachi, Ltd.) PDF
2:15828 3D Simulations of An ICP C4F8 Discharge in a GEC Reference Cell - G. Font, L. Morgan (Kinema Research & Software, L.L.C.), B. Devulapalli, and E. Grald (Fluent Inc.) PDF
2:30829 Silicon Surface Deformation During H2 Bake In SEG Using LPCVD For Epitxial Silicon Channel - D.-H. Weon, S.-H. Hahn, S.-K. Lee, J.-S. Roh, and J.W. Park (Hyundai Electronics Industries Co., Ltd.) PDF
2:45830 Considerations for Epitaxial Si1-xGex Processing in Manufacturing Operations - D.J. Meyer, J. Italiano, P. Brabant, and B. Pagliaro (ASM America) PDF
3:00 Fifteen-Minute Intermission
3:15831 A Non-Uniformity Crisis in Patterning: Origin and Solutions - M. Engelhardt and V. Weinrich (Infineon Technologies) GIF
3:30832 Increasing the Switching Speed of IGBTs - F. Robb, P. Venkatraman, H. Cheng, I. Wan, and D. Burns (ON Semiconductor) PDF
3:45833 A Rapid Chemical Method to Determine TiN Residue on Bondpads in Wafer Fabrication - H. Younan (Chartered Semiconductor Manufacturing Ltd) PDF
4:00834 Preparation of Ni Particles by Spray Pyrolysis of Nickel Ammine Complex - B. Xia, W. Lenggoro, and K. Okuyama (Hiroshima University) PDF
4:15835 Structural Characterisation of Thin Films (superlattices) of Cu/Ni Obtained by Electrodeposition - A. Tokarz and A. Wolkenberg (Technical University of Czestochowa) PDF
4:30836 Effect of an Organic Additive on Electroplated CoFe Magnetic Thin Film - R. Laurence, F. Lallemand, M.-P. Gigandet, and J. Pagetti (U.F.R. S.T. - 25 030) PDF