Co-Chairs: R. Singh and S.S. Ang
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | Opening Remarks by R. Singh | ||
| 10:05 | 224 | The Future of Silicon IC Technology - S. Hillenius (Bell Laboratories, Lucent Technologies) | |
| 10:45 | 225 | Liquid Source Misted Chemical Deposition (LSMCD) of Thin Dielectric Films - D.-O. Lee, P. Roman (The Pennsylvania State University), P. Mumbauer, R. Grant (PRIMAXX Inc.), M. Horn, and J. Ruzyllo (The Pennsylvania State University) | |
| 11:05 | 226 | Comparison of Furnace and Rapid Photothermal Processing of IP9333 for High K Applications - M. Fakhruddin, R. Singh, and K. Poole (Clemson University) | |
| 11:25 | 227 | Anomalous TixTayO High K Thin Films - Y. Kuo, J.-Y. Tewg, and J. Donnelly (Texas A&M University) | |
| 11:45 | 228 | Precise Characterization of ZrO2 Ultra Thin Gate Dielectrics by Various Independent Techniques - J.L. Stehle, P. Boher, C. Defranoux, S. Janicot, P. Evrard (SOPRA S.A.), J.P. Piel, Y. Hu (STEAG RTP Systems), and S.-P. Tay (SOPRA S.A.) |
Co-Chairs: S.S. Ang and R. Singh
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 229 | Chemistry and Reactivity of Metal/Polymer Interfaces - P.S. Ho (The University of Texas at Austin) | |
| 2:30 | 230 | High Dielectric Constant Ceramics for Electronic Applications: A Review - F. Barlow, A. Elshabini, S. Ang, and W.D. Brown (University of Arkansas) | |
| 3:00 | 231 | Preparation of SiTiO Films by Liquid Phase Deposition - M.-K. Lee and C.-M. Shih (National Sun Yat-sen University) | |
| 3:20 | 232 | Process and Material Characteristics of Titanium Tantalum Oxide (TixTayO)- a New High K Thin Film - Y. Kuo, J.-Y. Tewg, and J. Donnelly (Texas A&M University) | |
| 3:40 | Twenty-Minute Intermission |
Co-Chairs: H.S. Rathore and M.J. Loboda
| Time | Abs# | Title | View |
|---|---|---|---|
| 3:50 | 233 | PECVD Deposited SiCOH Films with Reduced Dielectric Constants. - A. Grill and V. Patel (IBM Research Division) | |
| 4:20 | 234 | Fluorine Distribution and Film Stability of HDP-FSG and PE-FSG Dielectric Materials- A Comparative Study - W.-T. Tseng (WaferTech, LLC) and J. Song (Novellus System, Inc.) | |
| 4:40 | 235 | Formation and Properties of Low-k, Porous Spin-on-Glass - A. Padovani, S.A. Allen, and P. Kohl (Georgia Institute of Technology) | |
| 5:00 | 236 | Patterning and Pattern Development in Parylenes - K. Grant Pruden and S. Beaudoin (Arizona State University) | |
| 5:20 | 237 | Low Dielectric Constant Polymers for Next Generation Microelectronic Packaging - M. Alexander Jr., T. Dang, C. Specker, M. Houtz, and F. Arnold (Air Force Research Laboratory) | |
| 5:40 | 238 | Low-k, Porous Spin-on-Glass - A. Padovani (Georgia Institute of Technology) |
Co-Chairs: M.J. Loboda and H.S. Rathore
| Time | Abs# | Title | View |
|---|---|---|---|
| 9:00 | 239 | Electromigration Characteristics of Copper Damascene Interconnect with Low k- (FSG/USG) Dielectrics - D. Nguyen and H. Rathore (IBM) | |
| 9:30 | 240 | Evaluation and Integration of PECVD Carbon-doped SiO2 Low-k Thin Films for Copper Dual-damascene Metallization - L. Han, N. Loke (Institute of Microelectronics), J. Shi (Novellus Systems, Inc.), S. Santhanesh, C. li, J. Kang, L. Koh, J. Xie, P.D. Foo, and J. Xie (Institute of Microelectronics) | |
| 9:50 | 241 | Characterization of SiO2 Dielectric Films in Photo-Chemical Vapor Deposition Using Vacuum Ultraviolet Excimer Lamp - K. Toshikawa, J. Miyano, Y. Motoyama (Miyazaki OKI Electric Co. Ltd.), and K. Kurosawa (Institute for Moleculer Science) | |
| 10:10 | 242 | Selectivity Control in Plasma Etching for Dual Damascene with OSG films - S.-Y. Li and S.M.R. Sadjadi (Lam Research Corporation) | |
| 10:30 | Fifteen-Minute Intermission | ||
| 10:45 | 243 | Reliability of Silicon Oxide deposited by an Ion Beam as Insulator for Microelectronic Interconnect Layer - H.D. Wanzenboeck, S. Gergov, E. Auer, S. Harasek, E. Bertagnolli, M. Gritsch, H. Hutter, J. Brenner, and H. Stoeri (Vienna University of Technology) | |
| 11:15 | 244 | Electrical Characteristics of Organic Monolayer Dielectrics on Silicon - S. Kar (Indian Institute of Technology) and D. Vuillaume (CNRS) | |
| 11:35 | 245 | Fluorine Concentration and Film Characteristics of PE-FSG and HDP-FSG: Their Differences and Impacts on IMD Process Integration - W.-T. Tseng (WaferTech, LLC) and J. Song (Novellus System, Inc.) |