199th Meeting - Washington, DC

March 25-30, 2001


I2 - Sixth International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films

Dielectric Science and Technology Division/Electronics Division/High Temperature Materials Division

Wednesday, March 28, 2001

Room 7, Meeting Room Level

Oxide Wear-Out, Reliability, Stress and Interfaces

Co-Chairs: K.B. Sundaram and R.E. Sah

10:00 Introductory Remarks by the Organizers
10:05246 A Review of Oxide Wearout, Breakdown, and Reliability - D. Dumin (Clemson University) PDF
11:00247 Surface and Interface Study of ion Beam Deposited Silicon Oxide Thin Films - H.D. Wanzenboeck, E. Bertagnolli, B. Basnar, J. Smoliner, M. Gritsch, H. Hutter, J. Brenner, and H. Stoeri (Vienna University of Technology) PDF
11:20248 Study of Hole Mobility of PMOSFETs in Inversion Layer During High-Field Stressing - R. Jarawal and D. Misra (New Jersey Institute of Technology) PDF
11:40249 Two Limiting Thinnesses of the Ultrathin Gate Oxides - S. Kar (Indian Institute of Technology, Kanpur) PDF

SiO2 Stress and Interfaces

Co-Chairs: M.J. Deen and P. Lenahan

1:30250 Stress Induced Leakage Currents: Atomic Scale Defects - P. Lenahan, J. Campbell, and A. Kang (Pennsylvania State University) PDF
2:00251 Charging Damage During Plasma Enhanced Dielectric Deposition - K. Cheung (Bell Laboratories, Lucent Technologies) PDF
2:30252 Charge Transfer, Trapping and Detrapping Dynamics at Semiconductor Interfaces Probed by Second Harmonic Generation - V. Fomenko and E. Borguet (University of Pittsburgh) PDF
2:50253 Kinetics and Mechanisms of Organic Contaminant Interactions at Silicon Surfaces in High Temperature Processes - N. Rana, P. Raghu, and F. Shadman (University of Arizona) PDF
3:10 Twenty-Minute Intermission

SiO2 Films and Properties

Co-Chairs: D. Landheer and W.D. Brown

3:30254 Remote Plasma Deposited Gate Dielectrics on Si and SiGe MOSFETs - T. Ngai, R. Sharma, J. Fretwell, X. Chen, J. Chen, W. Brookover, and S. Banerjee (The University of Texas at Austin) PDF
4:00255 Rapid Thermal Processes of High Permittivity Films on Silicon for ULSI Gate Dielectrics Applications - S.-P. Tay, R. Sharangpani, and Y.Z. Hu (Steag RTP Systems) PDF
4:30256 Processing of Thick Thermal Gate Oxides in Trenchs - C.-T. Wu (Penn State University), R. Ridley, G. Dolny, T. Grebs, J. Hao (Intersil Corporation), S. Suliman, B. Venkataraman, O. Awadelkarim, R. Willams, P. Roman, and J. Ruzyllo (Penn State University) PDF
4:50257 Electrical Properties of SiO2-Films Prepared by VUV Chemical Vapor Deposition - Y. Motoyama, J. Miyano, K. Tosikawa, Y. Yagi (Miyazaki OKI Electiric Co,. Ltd.), K. Kurosawa (Institute for Moleclar Science), A. Yokotani, and W. Sasaki (University of Miyazaki) PDF
5:10258 SiO2 Film Deposition on Different Substrate Materials by Photo-CVD Using Vacuum Ultraviolet Radiation - J. Miyano, K. Toshikawa, Y. Motoyama (Miyazaki Oki Electric Co.), and K. Kurosawa (Institute for Molecular Science) PDF
5:30259 Monitoring and Removal of Organic Contaminants from Oxide-Passivated Silicon Surfaces - C.-L. Tsai, P. Roman, C.-T. Wu (Penn State University), E. Kamieniecki (QC Solutions, Inc.), and J. Ruzyllo (Penn State University) PDF

Thursday, March 29, 2001

Silicon Nitride/Oxynitrides

Co-Chairs: R.E. Sah and D. Landheer

8:30260 Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities - M. Petravic, J.S. Williams, and P.N.K. Deenapanray (Australian National University) PDF
9:00261 The Effect of Thin Oxides and Oxynitrides During the Rapid Thermal Anneal of Ultra-Low Energy Phosphorus Implants - S. Falk, D. Downey, N. Variam (Varian Semiconductor Equipment Associates), G. Roters, and W. Lerch (Steag RTP Systems) PDF
9:20262 Characteristics of Silicon Oxynitrides made by ECR Plasmas - J.A. Diniz, P.J. Tatsch, and J. Swart (State University of Campinas) PDF
9:40263 Radiation Hardening of Oxynitrides Formed by Low Nitrogen Implantation into Silicon Prior to Oxidation - J.A. Diniz, J. Godoy Fo., P.J. Tatsch, and J. Swart (State University of Campinas) PDF
10:00 Thirty-Minute Intermission

Silicon Nitride/Oxynitrides (cont'd)

Co-Chairs: D. Misra and C.P. D'Emic

10:30264 Material and Process Considerations for Ultrathin Silicon (Oxy-)Nitride Films Grown on Silicon and SiO2 Surfaces - C.P. D'Emic, E.P. Gusev, K.K. Chan, T. Zabel, M. Copel (IBM T.J. Watson Research Center), R. Murphy (IBM Microelectronics), P. Kozlowski, and J. Newbury (IBM T.J. Watson Research Center) PDF
11:00265 Silicon Oxynitride: A Versitale Material for Integrated Optics Application - K. Worhoff, A. Driessen, and P.V. Lambeck (University of Twente) PDF
11:30266 Characterization of Silicon Oxynitride Thin Films Deposited by ECR-PECVD - C. Simionescu, J. Wojcik, H.K. Haugen, J.A. Davies, and P. Mascher (McMaster University) PDF

Silicon Nitride/Oxynitrides (cont'd)

Co-Chairs: K.B. Sundaram and R.E. Sah

1:30267 Characterizations of Low-Temperature Magnetoplasma-Grown Si Oxynitride and Oxide - H. Ikoma (University of Tokyo) GIF
2:00268 Advances in Single Wafer Chemical Vapor Deposition of Oxide and Nitride Films - W. Pamler and Z. Gabric (Infineon Technologies) PDF
2:30269 Enhanced Oxidation of Silicon Nitride using In Situ Steam Generation - T. Trowbridge, N. Tam, M.-L. Chiang, G. Xing, and H.S. Joo (Applied Materials) PDF
2:50270 High Integrity Direct Oxidation /Nitridation at Low Temperatures using Radicals - T. Ohmi, S. Sugawa, and M. Hirayama (Tohoku University) PDF
3:20 Twenty-Minute Intermission

Silicon Nitride

Co-Chairs: M.J. Deen and D. Landheer

3:40271 Thermally Induced Stress Changes in High-Density Plasma Deposited Silicon Nitride Films - R.E. Sah, H. Baumann (Fraunhofer-Institut fur Angewandte Festkorperphysik), D. Serries (J. W. Goethe Universitat), M. Mikulla, and R. Kiefer (Fraunhofer-Institut fur Angewandte Festkorperphysik) PDF
4:00272 Effect of Oxygen in Deposited Ultra Thin Silicon Nitride Film on Electrical Properties - K. Muraoka and K. Kurihara (TOSHIBA Corporation) PDF
4:20273 Analysis of leakage current in CVD gate silicon nitride. - Y. Morisaki, Y. Tamura, C. Yoshida, K. Irino, and K. Takasaki (Fujitsu Laboratories Ltd.) PDF
4:40274 Study of Silicon-Nitride Barriers for Cu Metallization - W. Qin, M. Han, X. Bu, Z. Mo, L. Tang, and S. Wang (Institute of Microelectronics) PDF
5:00275 Influence of Low-Energy Argon Ion Bombardment and Vacuum Annealing on the Silicon Nitride Surface Properties - I.P. Petrenko, V.A. Gritsenko, L.M. Logvinsky (Institute of Semiconductor Physics), and H. Wong (City U) PDF