Co-Chairs: K.B. Sundaram and R.E. Sah
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | Introductory Remarks by the Organizers | ||
| 10:05 | 246 | A Review of Oxide Wearout, Breakdown, and Reliability - D. Dumin (Clemson University) | |
| 11:00 | 247 | Surface and Interface Study of ion Beam Deposited Silicon Oxide Thin Films - H.D. Wanzenboeck, E. Bertagnolli, B. Basnar, J. Smoliner, M. Gritsch, H. Hutter, J. Brenner, and H. Stoeri (Vienna University of Technology) | |
| 11:20 | 248 | Study of Hole Mobility of PMOSFETs in Inversion Layer During High-Field Stressing - R. Jarawal and D. Misra (New Jersey Institute of Technology) | |
| 11:40 | 249 | Two Limiting Thinnesses of the Ultrathin Gate Oxides - S. Kar (Indian Institute of Technology, Kanpur) |
Co-Chairs: M.J. Deen and P. Lenahan
| Time | Abs# | Title | View |
|---|---|---|---|
| 1:30 | 250 | Stress Induced Leakage Currents: Atomic Scale Defects - P. Lenahan, J. Campbell, and A. Kang (Pennsylvania State University) | |
| 2:00 | 251 | Charging Damage During Plasma Enhanced Dielectric Deposition - K. Cheung (Bell Laboratories, Lucent Technologies) | |
| 2:30 | 252 | Charge Transfer, Trapping and Detrapping Dynamics at Semiconductor Interfaces Probed by Second Harmonic Generation - V. Fomenko and E. Borguet (University of Pittsburgh) | |
| 2:50 | 253 | Kinetics and Mechanisms of Organic Contaminant Interactions at Silicon Surfaces in High Temperature Processes - N. Rana, P. Raghu, and F. Shadman (University of Arizona) | |
| 3:10 | Twenty-Minute Intermission |
Co-Chairs: D. Landheer and W.D. Brown
| Time | Abs# | Title | View |
|---|---|---|---|
| 3:30 | 254 | Remote Plasma Deposited Gate Dielectrics on Si and SiGe MOSFETs - T. Ngai, R. Sharma, J. Fretwell, X. Chen, J. Chen, W. Brookover, and S. Banerjee (The University of Texas at Austin) | |
| 4:00 | 255 | Rapid Thermal Processes of High Permittivity Films on Silicon for ULSI Gate Dielectrics Applications - S.-P. Tay, R. Sharangpani, and Y.Z. Hu (Steag RTP Systems) | |
| 4:30 | 256 | Processing of Thick Thermal Gate Oxides in Trenchs - C.-T. Wu (Penn State University), R. Ridley, G. Dolny, T. Grebs, J. Hao (Intersil Corporation), S. Suliman, B. Venkataraman, O. Awadelkarim, R. Willams, P. Roman, and J. Ruzyllo (Penn State University) | |
| 4:50 | 257 | Electrical Properties of SiO2-Films Prepared by VUV Chemical Vapor Deposition - Y. Motoyama, J. Miyano, K. Tosikawa, Y. Yagi (Miyazaki OKI Electiric Co,. Ltd.), K. Kurosawa (Institute for Moleclar Science), A. Yokotani, and W. Sasaki (University of Miyazaki) | |
| 5:10 | 258 | SiO2 Film Deposition on Different Substrate Materials by Photo-CVD Using Vacuum Ultraviolet Radiation - J. Miyano, K. Toshikawa, Y. Motoyama (Miyazaki Oki Electric Co.), and K. Kurosawa (Institute for Molecular Science) | |
| 5:30 | 259 | Monitoring and Removal of Organic Contaminants from Oxide-Passivated Silicon Surfaces - C.-L. Tsai, P. Roman, C.-T. Wu (Penn State University), E. Kamieniecki (QC Solutions, Inc.), and J. Ruzyllo (Penn State University) |
Co-Chairs: R.E. Sah and D. Landheer
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:30 | 260 | Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities - M. Petravic, J.S. Williams, and P.N.K. Deenapanray (Australian National University) | |
| 9:00 | 261 | The Effect of Thin Oxides and Oxynitrides During the Rapid Thermal Anneal of Ultra-Low Energy Phosphorus Implants - S. Falk, D. Downey, N. Variam (Varian Semiconductor Equipment Associates), G. Roters, and W. Lerch (Steag RTP Systems) | |
| 9:20 | 262 | Characteristics of Silicon Oxynitrides made by ECR Plasmas - J.A. Diniz, P.J. Tatsch, and J. Swart (State University of Campinas) | |
| 9:40 | 263 | Radiation Hardening of Oxynitrides Formed by Low Nitrogen Implantation into Silicon Prior to Oxidation - J.A. Diniz, J. Godoy Fo., P.J. Tatsch, and J. Swart (State University of Campinas) | |
| 10:00 | Thirty-Minute Intermission |
Co-Chairs: D. Misra and C.P. D'Emic
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:30 | 264 | Material and Process Considerations for Ultrathin Silicon (Oxy-)Nitride Films Grown on Silicon and SiO2 Surfaces - C.P. D'Emic, E.P. Gusev, K.K. Chan, T. Zabel, M. Copel (IBM T.J. Watson Research Center), R. Murphy (IBM Microelectronics), P. Kozlowski, and J. Newbury (IBM T.J. Watson Research Center) | |
| 11:00 | 265 | Silicon Oxynitride: A Versitale Material for Integrated Optics Application - K. Worhoff, A. Driessen, and P.V. Lambeck (University of Twente) | |
| 11:30 | 266 | Characterization of Silicon Oxynitride Thin Films Deposited by ECR-PECVD - C. Simionescu, J. Wojcik, H.K. Haugen, J.A. Davies, and P. Mascher (McMaster University) |
Co-Chairs: K.B. Sundaram and R.E. Sah
| Time | Abs# | Title | View |
|---|---|---|---|
| 1:30 | 267 | Characterizations of Low-Temperature Magnetoplasma-Grown Si Oxynitride and Oxide - H. Ikoma (University of Tokyo) | GIF |
| 2:00 | 268 | Advances in Single Wafer Chemical Vapor Deposition of Oxide and Nitride Films - W. Pamler and Z. Gabric (Infineon Technologies) | |
| 2:30 | 269 | Enhanced Oxidation of Silicon Nitride using In Situ Steam Generation - T. Trowbridge, N. Tam, M.-L. Chiang, G. Xing, and H.S. Joo (Applied Materials) | |
| 2:50 | 270 | High Integrity Direct Oxidation /Nitridation at Low Temperatures using Radicals - T. Ohmi, S. Sugawa, and M. Hirayama (Tohoku University) | |
| 3:20 | Twenty-Minute Intermission |
Co-Chairs: M.J. Deen and D. Landheer
| Time | Abs# | Title | View |
|---|---|---|---|
| 3:40 | 271 | Thermally Induced Stress Changes in High-Density Plasma Deposited Silicon Nitride Films - R.E. Sah, H. Baumann (Fraunhofer-Institut fur Angewandte Festkorperphysik), D. Serries (J. W. Goethe Universitat), M. Mikulla, and R. Kiefer (Fraunhofer-Institut fur Angewandte Festkorperphysik) | |
| 4:00 | 272 | Effect of Oxygen in Deposited Ultra Thin Silicon Nitride Film on Electrical Properties - K. Muraoka and K. Kurihara (TOSHIBA Corporation) | |
| 4:20 | 273 | Analysis of leakage current in CVD gate silicon nitride. - Y. Morisaki, Y. Tamura, C. Yoshida, K. Irino, and K. Takasaki (Fujitsu Laboratories Ltd.) | |
| 4:40 | 274 | Study of Silicon-Nitride Barriers for Cu Metallization - W. Qin, M. Han, X. Bu, Z. Mo, L. Tang, and S. Wang (Institute of Microelectronics) | |
| 5:00 | 275 | Influence of Low-Energy Argon Ion Bombardment and Vacuum Annealing on the Silicon Nitride Surface Properties - I.P. Petrenko, V.A. Gritsenko, L.M. Logvinsky (Institute of Semiconductor Physics), and H. Wong (City U) |