Co-Chairs: J. Han and H.M. Ng
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | Opening Remarks | ||
| 10:05 | 376 | Kinetics and Transport in Gallium Nitride Epitaxial Lateral Overgrowth - M. Coltrin, C. Mitchell, and J. Han (Sandia National Laboratories) | |
| 10:30 | 377 | Reduction of Threading Dislocations and Residual Strain in GaN Grown by Molecular Beam Epitaxy using RF-Plasma Nitrogen on Sapphire Substrates - K. Kishino and A. Kikuchi (Sophia University) | |
| 10:55 | 378 | The Ammonia- MBE Approach for High Electron Mobility in GaN Epilayers and AlGaN/GaN HFET Structures - H. Tang, J. Webb, and J. Bardwell (National Research Council of Canada) | |
| 11:20 | 379 | Scanning Probe Studies of Defect Dominated Electronic Transport in GaN - J. Hsu, D. Lang, S. Richter, M. Manfra, R. Kleiman, L. Pfeiffer (Bell Laboratories, Lucent Technologies), and R. Molnar (MIT Lincoln Laboratory) |
Co-Chairs: J.-I. Chyi and T.D. Moustakas
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 380 | Defects in GaN Delineated by Chemical Etches and Resonant Optical Excitation - H. Morkoc (Virginia Commonwealth University) | |
| 2:25 | 381 | Surface Preparation and Oxide Growth for GaN MOSFETs - B.P. Gila, J.W. Johnson, K.N. Lee, V. Krishnamoorthy, C.R. Abernathy, F. Ren, and S.J. Pearton (University of Florida) | |
| 2:50 | 382 | Magnetic and Structural Properties of GaMnN Mixed Crystals - W. Gebicki, L. Adamowicz (Warsaw University of Technology), M. Palczewska (Institute of Electronic Materials Technology), M. Zajac, J. Szyszko (Warsaw University), T. Szczytko, S. Podsiadło (Warsaw University of Technology), and A. Twardowski (Warsaw University) | |
| 3:15 | Fifteen-Minute Intermission | ||
| 3:30 | 383 | Growth of Ga1-xMnxN Single Crystals - P. Slawomir, S. Tomasz, A. Leszek, G. Wojciech (Warsaw University of Technology), and D. Jaroslaw (Polish Academy of Science) | |
| 3:50 | 384 | GaN Production Transfer From Single Wafer Equipment to Planetary Reactors - B. Schineller, O. Schoen, H. Protzmann, M. Luenenbuerger, A. Alam, M. Heuken, and H. Juergensen (AIXTRON AG) | |
| 4:10 | 385 | A Photoelectrochemical Study of InxGa1-xN Films - A. Theuwis, K. Strubbe, and W. Gomes (University Gent) |
Co-Chairs: S.J. Pearton and S.N.G. Chu
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:15 | 386 | Market Outlook and Product Performance Requirements for Nitride-Based LEDs - W.B. Alexander (UNIROYAL Optoelectronics) | |
| 8:40 | 387 | UV Digital Cameras Based on 32x32 and 128x128 Arrays of AlGaN p-i-n Photodiodes - J.F. Schetzina, J.D. Brown, J. Matthews, J. Li, and P. Srinivasan (North Carolina State University) | |
| 9:05 | 388 | The Effect of Photo-Assist Chemical Wet Etching on Schottcky Contact for AlGaN - C.Y. Fang, E.Y. Chang, W.J. Huang, J.S. Wong, C.S. Lee, and M.S. Feng (National Chiao Tung University) | |
| 9:30 | 389 | Optical, Electrical, and Physical Characteristics of Ni/Au Metal Contacts to p-GaN for High Brightness LEDs - W.B. Alexander, T. Johnson, D. Gutierrez, K. Kidney (UNIROYAL Optoelectronics), F. Ren, A. Zhang, J. Laroche, P. Holloway, B. Liu, and E. Lambers (University of Florida) | |
| 9:50 | 390 | New Metallization Scheme for Low Resistance Ohmic Contacts to P-Type GaN - S.C. Wang (National Chiao Tung University) | |
| 10:20 | Fifteen-Minute Intermission | ||
| 10:35 | 391 | Intersubband Absorption at lambda to 1.55 um in GaN/AlGaN Multiple Quantum Wells - C. Gmachl, H.M. Ng, S.-N.G. Chu, and A.Y. Cho (Bell Laboratories, Lucent Technologies) | |
| 11:00 | 392 | Ion Beam Damage Processes in GaN - S.O. Kucheyev, J.S. Williams (The Australian National University), J. Zou (The University of Sydney), C. Jagadish, J.E. Bradby (The Australian National University), and G. Li (Ledex Corp.) | |
| 11:25 | 393 | High Performance Small Area Contact GaN/AlGaN HBTs - K.-P. Lee, A.P. Zhang, F. Ren (University of Florida), J. Han (Sandia National Labs.), W.S. Hobson (AT&T Murray), and S.J. Pearton (University of Florida) | |
| 11:45 | 394 | High-Breakdown Voltage Planar GaN and AlGaN Schottky Rectifiers - A.P. Zhang, J.W. Johnson, F. Ren, K.P. Lee, S.J. Pearton (University of Florida), and J. Han (Sandia National Laboratories) |