199th Meeting - Washington, DC

March 25-30, 2001


M4 - State-of-the-Art Program on Compound Semiconductors XXXIV

Electronics Division

Tuesday, March 27, 2001

Room 14, Meeting Room Level

Co-Chairs: D.N. Buckley and P.H. Shen

2:00451 Growth and Characterization of InAs and InSb Quantum Dot Superlattices in Ternary Alloy Matrices: Toward an Optimized Strain-Balanced Quantum Dot Detector - R. Leavitt and J. Little (Army Research Laboratory) PDF
2:30452 GaInNP: A Novel Material for Device Applications - C.W. Tu, Y.G. Hong, H.P. Xin, and R. Andre (University of California, San Diego) PDF
3:00 Fifteen-Minute Intermission
3:15453 Extended Defects and Electrical Properties in MOVPE-Grown GaN - M.E. Twigg, A.E. Wickenden, D.D. Koleske, R.L. Henry, M. Fatemi, J.C. Culbertson, J.A. Freitas, Jr., and S. Binari (Naval Research Laboratory) PDF
3:45454 The Mechanism of Photoenhanced Wet Etching of GaN - J. Bardwell, H. Tang, J. Webb, J. Fraser, and S. Moisa (National Research Council) PDF
4:15455 Characteristics of InP in KOH and (NH4)2S Solutions under Anodic Conditions - E. Harvey, C. O'Dwyer, T. Melly, and N. Buckley (University of Limerick) PDF
4:35456 Self-Assembly of Phosphonate-based Monolayers on GaAs and GaN - C. Hughes, S. Koh, J. Polefrone, and B. Augustine (James Madison University) PDF
4:55457 Decomposition of InP and Growth of Indium Islands in Systems with H-atoms - V. Gorbenko (Zaporozhye Institute of State and Municipal Government), J. Shvets (Zaporozhye State University), and A. Gorban (Zaporozhye Institute of State and Municipal Government) PDF

Wednesday, March 28, 2001

Co-Chairs: S.N.G. Chu and P. Chang

10:00458 Electroluminescence Characterization of Base Layers with In and N Incorporation in InGaP/InGaAsN HBTs - R. Fitch, F. Schuermeyer (Air Force Research Laboratory), R. Welser (Kopin Corporation), T. Jenkins, R. Dettmer, J. Gillespie, J. Sewell, K. Nakano, C. Bozada, D. Via, and R. Welch (Air Force Research Laboratory) PDF
10:30459 p-Ohmic Contact Study for Intra-Cavity Contacts in AlGaAs/GaAs VCSELs - B. Luo, G. Dang (University of Florida), J. Lopata, S.N.G. Chu, W.S. Hobson, L.M.F. Chirovsky (Bell Laboratories), F. Ren, and S.J. Pearton (University of Florida) PDF
10:50460 Effects of N_2 or Ar Plasma Exposure on GaAs/AlGaAs Heterojunction Bipolar Transistors - C.H. Hsu, C.C. Chen (Feng Chia University), B. Luo, G. Dang, F. Ren, S.J. Pearton, C.R. Abernathy (University of Florida), J.W. Lee (Inje University), K.D. Mackenzie, and J. Sasserath (Unaxis USA Inc.) PDF
11:20461 Study of Radiation Induced Resistance Mechanisms in GaAs MESFET and TLM Structures - B. Luo, D. Schoenfeld, and F. Ren (University of Florida) PDF
11:50462 Electrical Properties of InAlP Native Oxides for GaAs-Based MOS Applications - P. Barrios, D. Hall, G. Snider (University of Notre Dame), U. Chowdhury, and R. Dupuis (The University of Texas at Austin) PDF

Co-Chairs: A.G. Baca and R.F. Kopf

2:00463 Performance of Intra-Cavity Contacted, Shallow Implant Apertured Vertical-Cavity Surface Emitting Lasers - W.S. Hobson, J. Lopata (Bell Labs), G. Dang (University of Florida), L.M.F. Chirovsky, S.N.G. Chu, M. Tayahi (Bell Labs), F. Ren, and S.J. Pearton (University of Florida) GIF
2:30464 Progress on Vertical-Cavity Surface-Emitting Lasers - D.K. Serkland (Sandia National Laboratories), K.D. Choquette (University of Illinois), G.R. Hadley, A.J. Fischer, K.M. Geib, and A.A. Allerman (Sandia National Laboratories) PDF
3:00 Fifteen-Minute Intermission
3:15465 High-Performance Back-Illuminated Solar-Blind AlGaN Photodetectors Grown by Metalorganic Chemical Vapor Deposition - D.J.H. Lambert, B. Yang, T. Li, C.J. Collins, M.M. Wong, U. Chowdhury, J.C. Campbell, and R.D. Dupuis (The University of Texas at Austin) PDF
3:35466 Asymmetry in MSM Detector/Mixer and Its Implication in FM/cw Ladar Systems - P.H. Shen, M. Stead, W. Ruff, B. Stann (U.S. Army Research Laboratory), and P. Uppal (Sanders - A Lockheed Martin Company) PDF
4:05467 Design Optimization of InGaAsN-based Pnp Heterojunction Bipolar Transistors for Low-Power Applications - C. Monier (University of Florida), P.C. Chang, A.G. Baca (Sandia National Laboratories), N.Y. Li (Emcore Corp.), J.R. Laroche (University of Florida), H.Q. Hou (Emcore Corp.), F. Ren, and S.J. Pearton (University of Florida) PDF
4:25468 Orientation and Dielectric Overlayer Effects in InGaP/GaAs HBTs - A. Baca (Sandia National Laboratories), C. Monier (Univeristy of Florida), P.-C. Chang (Agilent Technologies), M. Armendariz, R. Briggs (Sandia National Laboratories), and S. Pearton (Univeristy of Florida) PDF
4:45469 2.4-V Operated Enhancement-Mode Pseudomorphic HEMT's for Wireless Communications - E.Y. Chang, S.H. Chen (National Chiao Tung University), and S.P. Wang (Hexawave Inc.) PDF