Co-Chairs: D.N. Buckley and P.H. Shen
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 451 | Growth and Characterization of InAs and InSb Quantum Dot Superlattices in Ternary Alloy Matrices: Toward an Optimized Strain-Balanced Quantum Dot Detector - R. Leavitt and J. Little (Army Research Laboratory) | |
| 2:30 | 452 | GaInNP: A Novel Material for Device Applications - C.W. Tu, Y.G. Hong, H.P. Xin, and R. Andre (University of California, San Diego) | |
| 3:00 | Fifteen-Minute Intermission | ||
| 3:15 | 453 | Extended Defects and Electrical Properties in MOVPE-Grown GaN - M.E. Twigg, A.E. Wickenden, D.D. Koleske, R.L. Henry, M. Fatemi, J.C. Culbertson, J.A. Freitas, Jr., and S. Binari (Naval Research Laboratory) | |
| 3:45 | 454 | The Mechanism of Photoenhanced Wet Etching of GaN - J. Bardwell, H. Tang, J. Webb, J. Fraser, and S. Moisa (National Research Council) | |
| 4:15 | 455 | Characteristics of InP in KOH and (NH4)2S Solutions under Anodic Conditions - E. Harvey, C. O'Dwyer, T. Melly, and N. Buckley (University of Limerick) | |
| 4:35 | 456 | Self-Assembly of Phosphonate-based Monolayers on GaAs and GaN - C. Hughes, S. Koh, J. Polefrone, and B. Augustine (James Madison University) | |
| 4:55 | 457 | Decomposition of InP and Growth of Indium Islands in Systems with H-atoms - V. Gorbenko (Zaporozhye Institute of State and Municipal Government), J. Shvets (Zaporozhye State University), and A. Gorban (Zaporozhye Institute of State and Municipal Government) |
Co-Chairs: S.N.G. Chu and P. Chang
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 458 | Electroluminescence Characterization of Base Layers with In and N Incorporation in InGaP/InGaAsN HBTs - R. Fitch, F. Schuermeyer (Air Force Research Laboratory), R. Welser (Kopin Corporation), T. Jenkins, R. Dettmer, J. Gillespie, J. Sewell, K. Nakano, C. Bozada, D. Via, and R. Welch (Air Force Research Laboratory) | |
| 10:30 | 459 | p-Ohmic Contact Study for Intra-Cavity Contacts in AlGaAs/GaAs VCSELs - B. Luo, G. Dang (University of Florida), J. Lopata, S.N.G. Chu, W.S. Hobson, L.M.F. Chirovsky (Bell Laboratories), F. Ren, and S.J. Pearton (University of Florida) | |
| 10:50 | 460 | Effects of N_2 or Ar Plasma Exposure on GaAs/AlGaAs Heterojunction Bipolar Transistors - C.H. Hsu, C.C. Chen (Feng Chia University), B. Luo, G. Dang, F. Ren, S.J. Pearton, C.R. Abernathy (University of Florida), J.W. Lee (Inje University), K.D. Mackenzie, and J. Sasserath (Unaxis USA Inc.) | |
| 11:20 | 461 | Study of Radiation Induced Resistance Mechanisms in GaAs MESFET and TLM Structures - B. Luo, D. Schoenfeld, and F. Ren (University of Florida) | |
| 11:50 | 462 | Electrical Properties of InAlP Native Oxides for GaAs-Based MOS Applications - P. Barrios, D. Hall, G. Snider (University of Notre Dame), U. Chowdhury, and R. Dupuis (The University of Texas at Austin) |
Co-Chairs: A.G. Baca and R.F. Kopf
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 463 | Performance of Intra-Cavity Contacted, Shallow Implant Apertured Vertical-Cavity Surface Emitting Lasers - W.S. Hobson, J. Lopata (Bell Labs), G. Dang (University of Florida), L.M.F. Chirovsky, S.N.G. Chu, M. Tayahi (Bell Labs), F. Ren, and S.J. Pearton (University of Florida) | GIF |
| 2:30 | 464 | Progress on Vertical-Cavity Surface-Emitting Lasers - D.K. Serkland (Sandia National Laboratories), K.D. Choquette (University of Illinois), G.R. Hadley, A.J. Fischer, K.M. Geib, and A.A. Allerman (Sandia National Laboratories) | |
| 3:00 | Fifteen-Minute Intermission | ||
| 3:15 | 465 | High-Performance Back-Illuminated Solar-Blind AlGaN Photodetectors Grown by Metalorganic Chemical Vapor Deposition - D.J.H. Lambert, B. Yang, T. Li, C.J. Collins, M.M. Wong, U. Chowdhury, J.C. Campbell, and R.D. Dupuis (The University of Texas at Austin) | |
| 3:35 | 466 | Asymmetry in MSM Detector/Mixer and Its Implication in FM/cw Ladar Systems - P.H. Shen, M. Stead, W. Ruff, B. Stann (U.S. Army Research Laboratory), and P. Uppal (Sanders - A Lockheed Martin Company) | |
| 4:05 | 467 | Design Optimization of InGaAsN-based Pnp Heterojunction Bipolar Transistors for Low-Power Applications - C. Monier (University of Florida), P.C. Chang, A.G. Baca (Sandia National Laboratories), N.Y. Li (Emcore Corp.), J.R. Laroche (University of Florida), H.Q. Hou (Emcore Corp.), F. Ren, and S.J. Pearton (University of Florida) | |
| 4:25 | 468 | Orientation and Dielectric Overlayer Effects in InGaP/GaAs HBTs - A. Baca (Sandia National Laboratories), C. Monier (Univeristy of Florida), P.-C. Chang (Agilent Technologies), M. Armendariz, R. Briggs (Sandia National Laboratories), and S. Pearton (Univeristy of Florida) | |
| 4:45 | 469 | 2.4-V Operated Enhancement-Mode Pseudomorphic HEMT's for Wireless Communications - E.Y. Chang, S.H. Chen (National Chiao Tung University), and S.P. Wang (Hexawave Inc.) |