Co-Chairs: M. Yang and M. Engelhardt
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:40 | 1292 | Effects of Arsenic Concentration Profile on Electric Properties of Gate Oxide in MOS Devices - K.-S. Chang-Liao (National Tsing Hua Univ.) and C.-S. Chuang (Nat'l Tsing Hua Univ.) | |
| 11:00 | 1293 | Suppression of Plasma Charging Damage in MOSFETs with Gate Oxynitride by Two-step Nitridation - P.-J. Tzeng, B.-F. Wu, and K.-S. Chang-Liao (National Tsing Hua University) | |
| 11:20 | 1294 | Effects of Ion Bombardment on Developed Photoresist Morphology during Reactive Etch Processes for sub 0.25 micron Semiconductor Devices - M. Naeem, R. Wise (IBM Microelectronics Division), T. Wang (Cypress Semiconductor), G. Worth, D. Dobuzinsky (IBM Microelectronics Division), Z. Lu (Infineon Technologies), and H. Abdul-Ridha (Conexant) | |
| 11:40 | 1295 | Plasma Charging Damage Performance Assessment with Scaled-up Process From 200 mm To 300 mm Dielectric Etch Chambers - S. Ma, C. Bjorkman, B. Mays, T. Kropwenicki, T. Feng, Q. Li, U. Dadu, M. Chang, and H. Shan (Dielectric Etch Division) |
Co-Chairs: G.S. Mathad and M.D. Naeem
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 1296 | Electrical Properties of Tantalum Oxide Films on Plasma Nitrided Silicon Substrates - Y.-S. Lai and J.-S. Chen (National Cheng Kung University) | |
| 2:20 | 1297 | Patterning with 193nm Resists - V. Bakshi, G. Smith, T. Alzaben, J. Beach, K. Spurlock, R. Berger, S.-T.L. Dorris, D. Holladay, and J. Woehl (International SEMATECH) | |
| 2:40 | 1298 | Impact of Chemistry and Process Kit Characteristics on Etch Rate Non-Uniformities in Pattern Transfer - M. Engelhardt (Infineon Technologies) | |
| 3:00 | 1299 | Effective Dual Damascene Process using IMD film Gap Fill Properties for Deep Sub-micron interconnects Technologies. - S.-K. lee, H.-K. Ryu, C.-H. Park, S.-I. Kim, J.-W. Kim, I.-W. Kim, and H.-K. Yoon (Hyundai Electronics Industries Co. Ltd) | |
| 3:20 | Twenty-Minute Intermission | ||
| 3:40 | 1300 | Effect of CHF3 Addition on RIE Process of Aluminum Using Inductive Coupled Plasma - S. Saito, K. Sugita (Chiba University), and J. Tonotani (Toshiba Corporation) | |
| 4:00 | 1301 | Atomic Layer Etching of Si(100) for Reducing Etching Damage - B. Kim, S. Chung, and S. Cho (Sungkyunkwan University) | |
| 4:20 | 1302 | Inductively Coupled Plasma Etching of PbZrXTi1XO3Thin Films in Cl2C2F6 and HBr plasmas - C.W. Chung, Y.H. Byun, and H.I. Kim (Inha University) |