Co-Chairs: G. S. Mathad and R. L. Opila
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 1303 | Improved Determination of Additives in Acid Copper Plating Baths - E. Kaiser, B. Newton, B. Joyce, and J. Rohrer (Dionex Corporation) | |
| 2:20 | 1304 | Connecting the Evolution and Coalescence of 3-Dimensional Grain Structures to Reactor-Scale Phenomena - M. Bloomfield, D. Richards, T. Cale, O. Klass, J. Lu, A. Maniatty, and K. Jansen (Rensselaer Polytechnic Institute) | |
| 2:40 | 1305 | The Control of Topographical Selectivity in Pd-Activated Electroless Copper Deposition - Y.-J. Oh, S.M. Cho, and C.-H. Chung (Sungkyunkwan University) | |
| 3:00 | 1306 | Microstructure Control of Copper Films by Addition of Molybdenum in an Advanced Metallization Process - J.H. Jang (Kookmin University), W.H. Lee (Sejong University), and J.G. Lee (Kookmin University) | |
| 3:20 | 1307 | A Coulometric Technique for Monitoring the Morphology of Copper Electrodeposits - L.D. Burke and A. O 'Connell (University College Cork) | |
| 3:40 | 1308 | Tribological Properties of Cu/Ultra Low-k Wafers - P. Gopalan, T. Dyer, B. Mueller, I. Emesh, and S. Chadda (SpeedFam-IPEC Corporation) | |
| 4:00 | Twenty-Minute Intermission | ||
| 4:20 | 1309 | Slurry Corrosion Behavior as It Relates to Improved Copper CMP/Low k CMP Process - B. Mueller, T. Dyer, B. Palmer, I. Emesh, and P. Gopalan (Speedfam-IPEC) | |
| 4:40 | 1310 | The Effect of Additives in Cu CMP Slurry on Cu Polishing - Y.-K. Hong, D.-H. Eom, and J.-G. Park (Hanyang University) | |
| 5:00 | 1311 | A Multi-Scale Elasto-hydrodynamic Contact Model of Chemical Mechanical Planarization - A. Kim, J. Tichy, and T. Cale (Rensselaer Polytechnic Institute) | |
| 5:20 | 1312 | A New Chemical Mechanical Polishing Method using the Frozen Etchant Pad - Y.-J. Oh, G.-S. Park (Sungkyunkwan University), S.Y. Park (Fine Semitech Co., Ltd), T.W. Jung (Hyundai Electronics Industries Co., Ltd), and C.-H. Chung (Sungkyunkwan University) |
Co-Chairs: H.S. Rathore and T.S. Cale
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:30 | 1313 | Thermal Reactions of Cu/Fluorinated Silicon Oxide and Cu/Organosilicate Glasses on Silicon - J.S. Jeng, J.-S. Chen (National Cheng Kung University), G. Lin, and J. Su (Applied Materials Taiwan) | |
| 8:50 | 1314 | "Seedless" Electrochemical Deposition of Copper on PVD-W2N Liner Materials for ULSI Devices - M. Shaw (Sandia National Laboratory) and D. Duquette (Rensselaer Polytechnic Institute) | |
| 9:10 | 1315 | Electroless Nickel Ternary Alloy Films for Copper Interconnection Technology - N. Takano, T. Kurokawa, T. Osaka (Waseda University), and K. Ueno (NEC Corporation) | |
| 9:30 | 1316 | The Integration of Cu, TaN, and Porous Dielectrics - R.L. Opila (Agere Systems) and S. Yang (Bell Labs, Lucent Technologies) | |
| 9:50 | 1317 | Electrical Properties of Nanoporous PMSSQ - S.-K. Min, J.M. Park, K. Song, B.-S. Kim (Sogang University), M.Y. Jin (Korea Research Institute of Chemical Technology), K.H. Char (Seoul National University), H.-W. Rhee (Sogang University), and D.Y. Yoon (Seoul National University) | |
| 10:10 | Thirty-Minute Intermission | ||
| 10:40 | 1318 | Adhesion Properties of Silica-Based Low Dielectric Constant Films by Modified Edge Lift-Off Test - Y.-D. Kim, D.-S. Sin, M.-S. Moon, H.-Y. Nam, J.-W. Kang, B.-K. Choi, G.-G. Kang, and M.-J. Ko (LG Chemical) | |
| 11:00 | 1319 | Copper Patterning Using Plasma Oxidation or Anodization - Y. Li and D. Hess (Georgia Institute of Technology) | |
| 11:20 | 1320 | Electromigration Characteristics of Copper Damascene Interconnects Integrated with SiLK, Low k- Dielectric - D. Nguyen, H. Rathore, B. Agarwala, and R. Procter (IBM Microelectronics) | |
| 11:40 | 1321 | Effects of Geometry on Electromigration on Lifetime of CU Interconnects in Oxide Dielectrics - B. Agarwala and H. Rathore (IBM Microelectronics) |