2001 Joint International Meeting - the 200th Meeting of The Electrochemical Society, Inc. and the 52nd Annual Meeting of the International Society of Electrochemistry - San Francisco, California

September 2-7, 2001

PROGRAM INFORMATION

N1A - Compound Semiconductor and Low Temperature Electronic Applications: State-of-the-Art Program on Compund Semiconductors XXXV

ECS Cosponsors - Electronics/Dielectric Science and Technology

Tuesday, September 4, 2001

Continental Parlor 3, Ballroom Level

Co-Chairs: P. Chang and S.N. Chu

TimeAbs#TitleView
9:001359 Blue Lasers on Copper: The Integration of InGaN Laser Diodes on Dissimilar Substrates by Wafer Bonding and Laser Lift-off - W. Wong, M. Kneissl, D. Treat, M. Teepe, N. Miyashita, and N. Johnson (Xerox Palo Alto Research Center) PDF
9:301360 Photonic Bandgap Microcavity Surface Emitting Electroluminescence Light Source - P. Bhattacharya, W. Zhou, and J. Sabarinathan (University of Michigan, Ann Arbor) PDF
10:00 Thirty-Minute Intermission
10:301361 MOCVD-grown InGaAsN Using Efficient and Novel Precursor, Tertibutylhydrazine, for Optoelectronic Device Applications - N.-Y. Li (Kingmax Optoelectronics Inc.), P. Sharps, F. Newman (Emcore Corporation), P.C. Chang, A.G. Baca (Sandia National Laboratories), and H.Q. Hou (Emcore Corporation) PDF
11:001362 Effects of Residual Arsenic Incorporation during Gas-Source MBE Growth of InGaAsP Waveguides - S. Wey, R. Andre, and C. Tu (University of California, San Diego) PDF
11:301363 InP/InGaAs Carbon Doped DHBT –Growth, Process and Reliability - H.-C. Kuo (Luxnet corp) PDF

Co-Chairs: J. Wei and R.F. Kopf

TimeAbs#TitleView
2:001364 High Performance GaN/AlGaN HEMTs - A.G. Baca, R.D. Briggs, J.W. Johnson, C. Monier, A.A. Allerman, C.C. Mitchell, J.R. Wendt, R.J. Shul (Sandia National Laboratories), and F. Ren (University of Florida) PDF
2:301365 K-band AlGaN/GaN Power HFETs - J. Moon, M. Micovic, P. Janke, A. Kurdoghlian, P. Hashimoto, and W. Wong (HRL Laboratories LLC,) PDF
3:00 Thirty-Minute Intermission
3:301366 GaInNAs-Base NpN DHBTs Grown by GS-MBE with 2% Nitrogen Incorporation - R. Welty (University of California, San Diego), H. Xin (Emcore Corporation), C. Tu, and P. Asbeck (University of California, San Diego) PDF
3:501367 High-speed Performance of NpN InGaAsN-based Heterojunction Bipolar Transistors - C. Monier, A.G. Baca, P.C. Chang (Sandia National Laboratories), F. Newman, N.Y. Li (Emcore Photovoltaics), E. Armour (Emcore Corporation), R.D. Briggs (Sandia National Laboratories), and H.Q. Hou (Emcore Photovoltaics) PDF
4:201368 InGaAs/GaAs Composite Doped Channel Heterostructure Field-Effect Transistor - K.H. Yu, W.C. Liu, K.W. Lin, K.P. Lin, and C.H. Yen (National Cheng-Kung University) PDF
4:401369 In0.5Ga0.5PIn0.2Ga08 As Dual-Gate Pseudomorphic High Electron Mobility Transistors - W.-S. Lour (National Taiwan-Ocean University), M.-K. Tsai (National Taiwan University), K.-C. Chen, Y.-W. Wu, S.-W. Tan (National Taiwan-Ocean University), and Y.-J. Yang (National Taiwan University) PDF

Wednesday, September 5, 2001

Co-Chairs: A.G. Baca and N. Buckley

TimeAbs#TitleView
9:001370 Thin-Film Resistor fabrication for InP Technology Applications - R. Kopf, R. Melendes, D. Jacobson, A. Tate, M. Melendes, R. Reyes, R. Hamm, Y. Yang, J. Frackoviak, N. Weimann, H. Maynard, and C. Liu (Lucent Technologies, Bell Laboratories) PDF
9:301371 Pore Formation on InP Anodes in Alkaline Electrolytes - E. Harvey, C. O'Dwyer, T. Melly, N. Buckley, V. Cunnane, D. Sutton, and S. Newcomb (University of Limerick) PDF
9:501372 AlGaN/GaN HEMT Sub-bands Study using Low-temperature Photoluminescence - C.Y.J. Fang, C.F. Lin, E.Y. Chang, and M.S. Feng (National Chiao Tung University) PDF
10:10 Thirty-Minute Intermission
10:401373 Femtosecond Studies of High-Field Transient Electron Transport in GaN - M. Wraback, H. Shen (U.S. Army Research Laboratory, Sensors and Electron Devices Directorate), E. Bellotti (Electrical and Computer Engineering Department, Boston University), J.C. Carrano (DARPA), C.J. Collins, J.C. Campbell, R.D. Dupuis (Microelectronics Research Center, Department of Electrical and Computer Engineering), M.J. Schurman, and I.A. Ferguson (Emcore Corporation) PDF
11:101374 Surface Reactivity of InSb Studied by Cyclic Voltammetry Coupled to XPS - B. Erne, B. Canava, J. Vigneron, E.M. Khoumri, and A. Etcheberry (Institut Lavoisier (IREM)) PDF
11:301375 AlGaN Schottky Characteristics after Hybrid Photoenhanced Wet and Inductively Coupled Plasma Etching - W.J. Huang, C.Y. Fang, J.S. Wong, E.Y. Chang, and M.S. Feng (National Chiao Tung University) PDF

Co-Chairs: C. Monier and A.W. Wang

TimeAbs#TitleView
2:001376 Widely Tunable Vertical Cavity Surface Emitting Lasers Near 1.55 Micron Emission Wavelength - J. Baillargeon, W.-Y. Hwang, K.A. Anselm, J. Zheng, and S. Murry (Applied Optoelectronics, Inc.) PDF
2:301377 Energy Levels in Coupled Quantum-Wells and the Possible Application in QWIP - W.-S. Lour, Y.-Y. Chen (National Taiwan-Ocean University), M.-K. Tsai, and Y.-J. Yang (National Taiwan University) PDF
2:501378 Characteristics of InP/InGaAs Superlattice-emitter Resonant Tunneling Bipolar Transistors (SE'RTBT) - W.C. Liu, W.C. Wang, K.H. Yu, K.W. Lin, C.H. Yen, and K.P. Lin (National Cheng-Kung University) PDF
3:10 Thirty-Minute Intermission
3:401379 A Novel I- line Phase Shift Mask (PSM) Technique for Siubmicron T-Gate Formation - D.K. Fu, H.C. Chang, C.Y.J. Fang, and E.Y. Chang (National Chiao Tung University) PDF
4:001380 Sub-Micron Gate FET¡¦s by Optical Lithography Using Re-flow and SOG Method - W.-S. Lour (National Taiwan-Ocean University), M.-K. Tsai (National Taiwan University), K.-C. Chen, Y.-W. Wu, S.-W. Tan (National Taiwan-Ocean University), and Y.-J. Yang (National Taiwan University) PDF

Copyright 1995 The Electrochemical Society, Inc.