2001 Joint International Meeting - the 200th Meeting of The Electrochemical Society, Inc. and the 52nd Annual Meeting of the International Society of Electrochemistry - San Francisco, California

September 2-7, 2001


N1B - Compound Semiconductor and Low Temperature Electronic Applications: Sixth International Symposium on Low Temperature Electronics

ECS Cosponsors - Electronics/Dielectric Science and Technology

Thursday, September 6, 2001

Continental Parlor 3, Ballroom Level

Silicon Devices

Co-Chairs: R. Kirschman and V. Grassi

10:001392 Low Temperature Characteristics of Ultra-Short Gate Length, Ultra-Thin SOI MOSFETS, and Si Nanowire Devices - E. Suzuki, K. Ishii, S. Kanemura (Nanoelectric Research Institute), and T. Tsutsumi (Meiji Univeristy) PDF
10:301393 Performance and Reliability of Advanced pMOSFET Devices - B. Cretu, F. Balestra, and G. Ghibaudo (CNRS/INPG) PDF
10:501394 The Impact of the Drain Saturation Voltage on the Multiplciation Current Modeling of the MOSFETs at Liquid Helium Temperatures - C. Claeys and E. Simoen (IMEC) PDF
11:101395 Carrier Freeze-out and Relaxation Effects in CMOS N-channel MOSFETS at Cryogenic Temperatures Under Dynamic Operating Conditions - G. Oleszek (University of Colorado) PDF
11:301396 Prospects for the Operation of Deep Sub-0.1Ám MOSFETs at Low Temperature - F. Balestra and G. Ghibaudo (CNRS/INPG) PDF

Device Performance

Co-Chairs: F. Balestra and G.M. Oleszek

2:001397 Low Temperature Space-Borne Power Electronics and Semiconductor Devices - V.J. Kapoor, C.H. Melkonian, T.A. Miller (The University of Toledo), J.E. Dickman, and R.L. Patterson (NASA-Glenn Research Center) PDF
2:301398 Compound Semiconductor Devices for Space-Borne Power Electronic Systems - C.H. Melkonian, D. Bernardon, V.J. Kapoor (The University of Toledo), J.E. Dickman, and R.L. Patterson (NASA-Glenn Research Center) PDF
2:501399 Investigation of Ge Transistors for Cryogenic Power Applications - R. Ward, R. Kirschman (GPD Optoelectronics Corp.), O. Mueller (LTE-Low Temperature Electronics), R. Patterson, J. Dickman (NASA Glenn Research Center), and A. Hammoud (Dynacs Corp.) PDF
3:101400 Development of Cryogenic Ge JFETs - IV - R. Ward, R. Kirschman (GPD Optoelectronics Corp.), M. Jhabvala (NASA Goddard Space Flight Center), S. Babu (Ball Aerospace & Technologies Corp.), D. Camin, V. Grassi, C. Colombo (The University of INFN), W. Kandiah (Consultant), and J. Rosenberg (Harvey Mudd College) PDF
3:30 Twenty-Minute Intermission
3:501401 Low Frequency Noise versus Temperature Spectroscopy of Si and Ge JFETs - V. Grassi, C. Colombo, and D. Camin (Dell'Universita and INFN) PDF
4:201402 Experimental Investigation of pHEMT at 4.2K: Fabrication and Characterization - T. Lucas and Y. Jin (CNRS) PDF
4:401403 Analysis of BJT/JFET PTAT Sensor Operation - S. Amon, M. Mozek, D. Vrtacnik, D. Resnik, and M. Cvar (UL) PDF
5:001404 Transient Phenomena during the Self-Heating of Silicon Devices Operating at Low Temperatures - F.J. De la Hidalga (Instituto Nacional de Astrofisica) and M.J. Deen (McMaster University) PDF

Copyright 1995 The Electrochemical Society, Inc.