Co-Chairs: R. Kirschman and V. Grassi
| Time | Abs# | Title | View |
|---|---|---|---|
| 10:00 | 1392 | Low Temperature Characteristics of Ultra-Short Gate Length, Ultra-Thin SOI MOSFETS, and Si Nanowire Devices - E. Suzuki, K. Ishii, S. Kanemura (Nanoelectric Research Institute), and T. Tsutsumi (Meiji Univeristy) | |
| 10:30 | 1393 | Performance and Reliability of Advanced pMOSFET Devices - B. Cretu, F. Balestra, and G. Ghibaudo (CNRS/INPG) | |
| 10:50 | 1394 | The Impact of the Drain Saturation Voltage on the Multiplciation Current Modeling of the MOSFETs at Liquid Helium Temperatures - C. Claeys and E. Simoen (IMEC) | |
| 11:10 | 1395 | Carrier Freeze-out and Relaxation Effects in CMOS N-channel MOSFETS at Cryogenic Temperatures Under Dynamic Operating Conditions - G. Oleszek (University of Colorado) | |
| 11:30 | 1396 | Prospects for the Operation of Deep Sub-0.1µm MOSFETs at Low Temperature - F. Balestra and G. Ghibaudo (CNRS/INPG) |
Co-Chairs: F. Balestra and G.M. Oleszek
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 1397 | Low Temperature Space-Borne Power Electronics and Semiconductor Devices - V.J. Kapoor, C.H. Melkonian, T.A. Miller (The University of Toledo), J.E. Dickman, and R.L. Patterson (NASA-Glenn Research Center) | |
| 2:30 | 1398 | Compound Semiconductor Devices for Space-Borne Power Electronic Systems - C.H. Melkonian, D. Bernardon, V.J. Kapoor (The University of Toledo), J.E. Dickman, and R.L. Patterson (NASA-Glenn Research Center) | |
| 2:50 | 1399 | Investigation of Ge Transistors for Cryogenic Power Applications - R. Ward, R. Kirschman (GPD Optoelectronics Corp.), O. Mueller (LTE-Low Temperature Electronics), R. Patterson, J. Dickman (NASA Glenn Research Center), and A. Hammoud (Dynacs Corp.) | |
| 3:10 | 1400 | Development of Cryogenic Ge JFETs - IV - R. Ward, R. Kirschman (GPD Optoelectronics Corp.), M. Jhabvala (NASA Goddard Space Flight Center), S. Babu (Ball Aerospace & Technologies Corp.), D. Camin, V. Grassi, C. Colombo (The University of INFN), W. Kandiah (Consultant), and J. Rosenberg (Harvey Mudd College) | |
| 3:30 | Twenty-Minute Intermission | ||
| 3:50 | 1401 | Low Frequency Noise versus Temperature Spectroscopy of Si and Ge JFETs - V. Grassi, C. Colombo, and D. Camin (Dell'Universita and INFN) | |
| 4:20 | 1402 | Experimental Investigation of pHEMT at 4.2K: Fabrication and Characterization - T. Lucas and Y. Jin (CNRS) | |
| 4:40 | 1403 | Analysis of BJT/JFET PTAT Sensor Operation - S. Amon, M. Mozek, D. Vrtacnik, D. Resnik, and M. Cvar (UL) | |
| 5:00 | 1404 | Transient Phenomena during the Self-Heating of Silicon Devices Operating at Low Temperatures - F.J. De la Hidalga (Instituto Nacional de Astrofisica) and M.J. Deen (McMaster University) |