Co-Chairs: J. Ruzyllo and T. Ohmi
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 1405 | Influence of Molecular Weight of Organic Contaminants upon Adsorption Behaviors onto Silicon Surfaces - M. Nagase, M. Kitano, Y. Wakayama, Y. Shirai, and T. Ohmi (Tohoku University) | |
| 2:20 | 1406 | The Removal of Organic Contamination by O3/DI-water Processes: A Theoretical Study - F. De Smedt, H. Vankerckhoven, C. Vinckier (University of Leuven), S. De Gendt, M. Claes, and M. Heyns (IMEC) | |
| 2:40 | 1407 | Impact of Organic Contamination on Device Performance - D. Riley (International SEMATECH), J. Guan (Advanced Micro Devices), G. Gale (Tokyo Electron America, Inc.), G. Bersuker, J. Bennett, P. Lysaght, and B. Nguyen (International SEMATECH) | |
| 3:00 | 1408 | Removal Of Light And Heavy Organics By Ozone Processes - A. Sehgal and M.R. Yalamanchili (SCP Global Technologies, Inc.) | |
| 3:20 | 1409 | Surface Preparation Challenges with Cu/Low-k Damascene Structures - B.K. Kirkpatrick (Texas Instruments) | |
| 3:50 | 1410 | Post Etch/Ash Cleaning of Dual Damascene Structures: Single Wafer Megasonics with STG Dry - Y. Fan and B. Fraser (Verteq, Inc.) | |
| 4:10 | 1411 | Removal of Photoresist by O3DI-Water Processes: Determination of Degradation Products - H. Vankerckhoven, F. Desmedt, C. Vinckier (Katholieke Universiteit Leuven), B. Vanherp, M. Claes, S. Degendt, and M. Heyns (IMEC) | |
| 4:30 | 1412 | Corrosive Behavior of Tungsten in EKC265 Solution - H. Zhang (National University of Singapore), J.H. Ye (Institute of Materials Research and Engineering), B.H. Chen (National University of Singapore), Y.M. Chooi, and C.L. Cha (Chartered Semiconductor Manufacturing Ltd) | |
| 4:50 | 1413 | Ozonated HF Applications in a Spray Processing Tool - M. Claes, E. Rohr, S. De Gendt, M. Heyns (IMEC vzw.), S. Lagrange, and E. Bergman (Semitool Inc.) |
Co-Chairs: R.E. Novak and D. Riley
| Time | Abs# | Title | View |
|---|---|---|---|
| 9:40 | 1414 | A Study of Metallic Contamination Removal and Addition Using Modified SC-1 Solutions - C. Beaudry (Applied Materials), H. Morinaga (Mitsubishi Chemical Corporation), and S. Verhaverbeke (Applied Materials) | |
| 10:00 | 1415 | Engineering Tools for Designing a Metallic Removal Solution - S. Verhaverbeke (Applied Materials) | |
| 10:30 | 1416 | Different Adsorption Behaviors of Platinum Group Metals on Silicon Surfaces - G.-M. Choi, K. Kitami, I. Yokoi, and T. Ohmi (Tohoku University) | |
| 10:50 | 1417 | Co-deposition Mechanism of Trace Cu and Fe on H-Si(100) Surface in Buffered Fluoride Solutions - T. Homma, T. Kono, T. Osaka (Waseda University), M. Chemla (University P. & M. Curie), and V. Bertagna (University of Orleans) | |
| 11:10 | 1418 | Micro-contaminations of Copper and Silver on Silicon Wafer Surfaces - X. Cheng, C. Gu, C.-J. Lin, and Z.-D. Feng (Xiamen University) | |
| 11:20 | 1419 | Ionic Contamination of the Silicon Wafer from Wafer Cleaning Process - H. Omoregie, S. Buffat, and D. Sinha (SCP Global Technologies) | |
| 11:40 | 1420 | Titanium and Cobalt Etching by SC1 and SC2 in VLSI Technology - L. Liu, A. Walter, and S. Bay (Mattson Technology, Inc) |
Co-Chairs: T. Hattori and S. Verhaverbecke
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 1421 | Optimization of a Brush Scrubber for Nano-Particles - K. Xu, R. Vos, S. Arnauts (IMEC vzw), W. Schaetzlein, U. Speh (Mattson), and P. Mertens (IMEC vzw) | |
| 2:20 | 1422 | Sub 100nm Particle Removal with Deionized Water and A Megasonic Frequency of 835kHz - J. Lauerhaas, K. Xu, G. Vereecke, R. Vos, K. Kenis, P. Mertens (IMEC vzw), Y. Wu, T. Nicolosi (Verteq, Inc.), and M. Heyns (IMEC vzw) | |
| 2:40 | 1423 | Effect of H2O2 and IPA Addition in Dilute HF Solutions on Surface Etching and Particle Removal Efficiency - D.-H. Eom (Hanyang University), H.-S. Song (Dong-Woo Fine-Chem. Co. Ltd.), and J.-G. Park (Hanyang University) | |
| 3:00 | 1424 | Evaluation of New Megasonic System for Single Wafer Cleaning - K. Takeuchi, A. Tomozawa, A. Onishi, A. Tanzawa (Hitachi Tohbu Semiconductor Ltd.), T. Azuma, S.-I. Umemura (Hitachi Ltd.), Y. Wu, M. Bran, and B. Frazer (Verteq, Inc.) | |
| 3:20 | 1425 | Activity of HF Solutions and Particle Removal Using HF Solutions - S. Nelson, J. Sabol, and K. Christenson (FSI International Inc.) | |
| 3:40 | 1426 | A New Approach for Study of Particle Adhesion and Removal Relevant to Post CMP Cleaning - L. Su-Youn, L. Sang-Ho (Hanyang University), S. Hyung-Soo (Dongwoo Fine Chem, R&D Center), and P. Jin-Goo (Hanyang University) | |
| 4:00 | 1427 | Effect of Wafer Backside on Particle Addition Behaviour of HF-RCA Sequence - M. Strada, D. Lodi, E. Bellandi, and M. Alessandri (STMicroelectronics) | |
| 4:20 | 1428 | Spectroscopic and Electrochemical Studies of the Growth of Chemical Oxide in SC1 and SC2 - P. Sebastien, G. Francois, B. Kathy (STMicroelectronics), R. Nicolas, R. Dominique (DTS/SCPC CEA Grenoble), and B. valerie (Universite d'Orleans) | |
| 4:40 | 1429 | Electrochemical Study of Ultra-Thin Silicon Oxides - B. Valerie, E. Rene (Universite d'Orleans), P. Sebastien, L. Didier (STMicroelectronics), and C. Marius (Universite Pierre et Marie Curie) |
Co-Chairs: B. Kirkpatrick and M. Heyns
| Time | Abs# | Title | View |
|---|---|---|---|
| 8:30 | 1430 | A Surface Chemistry Approach to the Development of Gas Phase Wafer Cleaning Processes - A. Muscat, C. Finstad, A. Thorsness, and G. Montano-Miranda (University of Arizona) | |
| 9:00 | 1431 | Vacuum Clustered Dry Cleaning for Pre-Gate Surface Preparation - B. Schwab, R. Gifford, and J. Butterbaugh (FSI International, INC.) | |
| 9:20 | 1432 | Etching of Silicon Native Oxide Using Ultra Slow Multicharged Arq Ions - V. Le Roux, G. Machicoane, G. Borsoni, M. Korwin-Pawlowski, N. Bechu, S. Kerdiles, R. Laffitte, L. Vallier (X-ion), P. Roman, and J. Ruzyllo (Pennsylvania State University) | |
| 9:40 | 1433 | Gas-Phase Surface Conditioning in a High-k Gate Stack Cluster - P. Roman (PRIMAXX, Inc.), D.-O. Lee, J. Wang, C.-T. Wu, V. Subramanian (Pennsylvania State University), M. Brubaker, P. Mumbauer, R. Grant (PRIMAXX, Inc.), and J. Ruzyllo (Pennsylvania State University) | |
| 10:00 | 1434 | Effect of Composition and Post-Deposition Annealing on the Etch Rate of Hafnium and Zirconium Silicates in Dilute HF - J. Chambers, A. Rotondaro, M. Bevan, M. Visokay, and L. Colombo (Silicon Technology Research) | |
| 10:20 | Twenty-Minute Intermission | ||
| 10:40 | 1435 | Effects of Supercritical CO2 on the Electrical Characteristics of Semiconductor Devices - C. O'Murchu, A. Mathewson (NMRC), and E. Francais (Separex) | |
| 11:00 | 1436 | CryoKinetic Cleaning on Cu/Low-k Dual Damascene Structures - B. Kirkpatrick, E. Williams, S. Lavangkul (Texas Instruments), and J. Butterbaugh (FSI International) | |
| 11:20 | 1437 | Estimation of Evaporating Water Film Thickness During Different Drying Processes - W. Fyen, F. Holsteyns, P. Mertens (Imec), J. Lauerhaas (Verteq Inc.), and M. Heyns (Imec) | |
| 11:40 | 1438 | Influence of Ambient Oxygen and Moisture on the Growth of Native Oxide on Silicon Surfaces in Mini-environments - K. Saga, H. Kuniyasu, and T. Hattori (Sony Corporation) |
Co-Chairs: R.L. Opila and A.J. Muscat
| Time | Abs# | Title | View |
|---|---|---|---|
| 2:00 | 1439 | Single-Wafer Spin Cleaning with Repetitive Use of Ozonized Water and Dilute HF "SCROD" - T. Osaka, A. Okamoto, H. Kuniyasu, and T. Hattori (Sony corporation) | |
| 2:30 | 1440 | Effect of pH Values in Ozonized Ultrapure Water on Cleaning Efficiency - I. Yokoi, G.-M. Choi, and T. Ohmi (Tohoku University) | |
| 2:50 | 1441 | Advanced Single Chemistry Alkaline Cleaning in a STEAG Single Tank Tool - B. Onsia (IMEC), E. Schellkes (Mattson Wet Products), R. Vos, S. De Gendt (IMEC), O. Doll, A. Fester, B. Kolbesen (Johann Wolfgang Goethe University), M. Hoffman (Ashland Specialty Chemical), Z. Hatcher (SEZ America), K. Wolke (Mattson Wet Products), P. Mertens, and M. Heyns (IMEC) | |
| 3:10 | 1442 | The Effect of Surfactants in Dilute HF Solutions - M. Jackson (Rochester Institute of Technology), C. Spivey, B. Hong, and E. Mori (General Chemical Corp.) | |
| 3:30 | 1443 | Diluted NH4F-Based Wet Chemistry for Pre-Gate Clean - J.H. Ye, T.H. Bok (Institute of Materials Research and Engineering), S.F.Y. Li, E. Teo, D. Poon, B.J. Cho (National University of Singapore), A. See, S.Y.M. Chooi, and L. Chan (Chartered Semiconductor Manufacturing Ltd,) | |
| 3:50 | 1444 | Improved Post-Etch Via Clean with Fluoride-based Semi-Aqueous Chemistry Using an Intermediate Rinse - J. Diedrick, M. Fussy (FSI International), R. Small, and W. Robertson (EKC Technology) | |
| 4:10 | 1445 | Improvement of SC-1 Bath Stability by Complexing Agents - H. Saloniemi, T. Visti, S. Eranen (VTT Electronics), A. Kiviranta (VTT Chemical Technology), and O. Anttila (Okmetic Oyj) | |
| 4:30 | 1446 | Advanced Pre-Gate Cleans for High Quality Ultra-Thin Oxides and Nitrided Gate Stacks - E. Baiya, J. Rosato (SCP Global Technologies), D. Acock, and J. Smythe (ZiLOG, INC) | |
| 4:50 | 1447 | Prevention of Si Etching in Diluted SC1 Solutions - E. Bellandi, M. Strada, D. Lodi, M. Alessandri, F. Pipia, S. Petitdidier, and D. Levy (STMicroelectronics) | |
| 5:10 | 1448 | New Short Cycle Wet Cleaning Concept for a 300 mm Fabrication Line - S. Verhaverbeke and K. Truman (Applied Materials) | |
| 5:40 | 1449 | InSitu Pre-Epi Clean Process for Next Generation Devices - I. Kashkoush, G. Chen, R. Ciari, and R. Novak (Akrion LLC) |