201st Meeting - Philadelphia, PA

May 12-17, 2002


R1 - Wide Bandgap Semiconductors For Photonic And Electronic Devices And Sensors II


Monday, May 13, 2002

Conference Rooms 302-303, Level 3

Co-Chairs: E.B. Stokes and W. Chang

10:00 Introductory Remarks -
10:05753 New Physics of Electron Transport in Nitrides - M. Shur (Rensselaer Polytechnic Institute)
10:35754 Excitation Mechanisms of Rare Earth Ions Embedded in GaN Thin Films - J. Zavada (US Army Research Office), U. Hommerich (Hampton University), and A. Steckl (University of Cincinnati)
11:05755 Electronic and Optoelectronic Devices Using Quarternary A1InGaN Layers - A. Khan (University of South Carolina)
11:35756 III-N Based Dilute Magnetic Semiconductors for Spintronics Applications - Y.D. Park, J.S. Lee, S.-Y. Lee, Z.G. Khim, E. Oh (Seoul National University), G.T. Thaler, M.E. Overberg, C.R. Abernathy, S.J. Pearton, J.-H. Kim, and F. Ren (University of Florida)

Co-Chairs: H.M Ng and A.G. Baca

1:40757 Sources of the Parasitic Chemical Reactions during AlGaN OPVE - J.R. Creighton, W.G. Breiland, and M.E. Coltrin (Sandia National Labs)
2:10758 GaN/Gd203/GaN Single Crystal Heterostructure - M. Hong, J. Kwo, S.N.G. Chu, J.P. Mannaerts (Agere Systems, Inc.), A.R. Kortan, H.M. Ng, A.Y. Cho, K.A. Anselm (Bell Labs/Lucent Technologies), C.M. Lee, and J.I. Chyi (National Central University)
2:40759 Growth of III-Nitrides by MBE - T. Moustakas, E. Iliopoulos, A. Sampath, A. Bhattacharyya, I. Sandeep, and I. Friel (Boston University)
3:10 Fifteen-Minute Intermission -
3:25760 Growth and Characterization of GaMnN Dilute Magnetic Semiconductors - G. Thaler, M. Overberg, C. Abernathy, S. Pearton, J. Kim, F. Ren (University of Florida), Y.D. Park, J.S. Lee (Seoul National University), N. Theodoropoulou, and A. Hebard (University of Florida)
3:55761 Er-doped GaN Grown By Molecular Beam Epitaxy - H.M. Ng (Bell Labs, Lucent Technologies)
4:15762 Improved Surface Morphology and Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown by MOCVD Using Different Growth Parameters - D. Florescu, D. Lee, and J. Ramer (Emcore Corporation)
4:35763 AlN Firms Epitaxialy Formed by Direct Nitridation of Sapphire using Aluminum Oxynitride as a Buffer Layer - W. Nakao, H. Fukuyama, and K. Nagata (Tokyo Institute of Technology)
4:55764 High Temperature Effects in Metal-Organic Vapor Phase Epitaxy of GaN and AlGaN - R.A. Talalaev, E.V. Yakovlev, A.V. Lobanova, Y.A. Shpolyanskiy, I.Y. Evstratov (Soft-Impact Ltd.), and Y.N. Makarov (STR Inc.)
5:15 Discussion by A. Osinsky -

Tuesday, May 14, 2002

Co-Chairs: J. Han and J.M. Zavada

8:20765 Semiconductor Ultraviolet Optical Sources for Biological Agent Detection - J.C. Carrano (Defense Advanced Research Projects Agency) and A.J. Maltenfort (Booz Allen & Hamilton Inc.)
8:50766 Commercialization of the SiC Flame Sensor - D. Brown, J. Kretchmer (GE Corporate Research & Development), L. Lombardo, and D. Schneider (GE Reuter-Stokes)
9:20767 Development of SiC Gas Sensor Systems - G. Hunter (NASA Glenn Research Center at Lewis Field), V. Thomas (Ohio Aerospace Institute), P. Neudeck (NASA Glenn Research Center at Lewis Field), D. Makel (Makel Engineering, Inc), C.C. Liu (Case Western Reserve University), L. Chen (Ohio Aerospace Institute), R. Okojie (NASA Glenn Research Center at Lewis Field), and B. Ward (Case Western Reserve University)
9:50768 Pyroelectronics and Pyrosensors Based on AlGaN/GaN Heterostructures - O. Ambacher (Technical University Munich)
10:20769 ZnO-Based Photoconductive UV Detector - M. Oh (Korea Institute of Science & Technology), J. Cho (Yonsei University), and W. Choi (Korea Institute of Science & Technology)

Co-Chairs: R.C. Fitch and H. Shen

2:10770 Activating Ion Implants in 4H-SiC by Annealing with an AlN or BN Cap - K. Jones (Army Research Labs)
2:40771 Nonlinear Effects in AlGaN/GaN HFET's Under Large-Signal RF Conditions - R.J. Trew and B. Davis (Virgina Tech)
3:10772 Photo-enhanced Wet Oxidation and Etching of GaN - L.-H. Peng, H.-M. Wu (National Taiwan University), C.-C. Chuo, and J.-I. Chyi (National Central University)
3:25 Twenty Five-Minute Intermission -
3:55773 Microstructure and the Optical Properties of InxGa1-xN Alloys - F.A. Ponce, S. Srinivasan, F. Bertram, A. Bell, L. Geng (Arizona State University), S. Tanaka, H. Omiya, and Y. Nakagawa (Nichia Corp.)
4:25774 N-Type Doping of High Aluminum Concentration Algan Based Materials for Optoelectronic Applications - S. Guo, M. Pophristic, B. Peres (EMCORE Corporation), and I. Ferguson (Georgia Institute of Technology)
4:45775 Enhancement of Photoluminescence and Microstructure of Undoped ZnO Thin Film Growth on Al_2O3 (0001) Substrate by rf Magnetron Sputtering - J. Cho, K. Yoon (Yonsei University), M. Oh, and W. Choi (Korea Institute of Science and Technology)
5:05776 Thermodynamics for Fabricating AlN/alon/sapphire Double Epitaxial Layers as an Advanced Substrate for Blue/Ultraviolet Optical Devices - H. Fukuyama, W. Nakao, and K. Nagata (Tokyo Institute of Technology)
5:25777 Optical Acceptor Ionization in III-Nitrides - S.F. LeBouef, E.B. Stokes, A. Cao, A. Ebong, and P. Sandvik (General Electric Corporate Research & Development)

Wednesday, May 15, 2002

Conference Rooms 302-303, Level 3

Co-Chairs: T.D. Moustakas and F. Ren

8:20778 Thermal Stability of Ni-based Ohmic Contacts to n-SiC For High Temperature and Pulsed Power Device Applications - M. Cole, P. Joshi, C. Hubbard, D. Demaree, and M. Ervin (U.S. Army Research Laboratory)
8:50779 Electron Injection-Induced Effects in III-Nitrides - L. Chernyak (University of Central Florida)
9:20780 GaN and SiC Power Rectifiers - J. Kim (University of Florida)
9:40781 Effect of Proton Radiation on dc And rf Performance of AlGaN/GaN HEMTs - B. Luo (University of Florida)
10:00782 Annealing Behavior of Ar Implanted GaN - I. Usov, N. Parikh (University of North Carolina at Chapel Hill), D. Thomson, Z. Reitmeier, and R. Davis (North Carolina State University)
10:20783 Electrical Characteristics of a New Ni-MPS Rectifier - K.-Y. Park, H.-H. Choi, J.-S. Kim, S.-Y. Kwon, and S.-Y. Choi (Kyungpook National University)