202nd Meeting - Salt Lake City, UT
October 20-25, 2002
PROGRAM INFORMATION
H1 - First International Symposium on High Dielectric Constant Materials: Material Science, Processing, Manufacturing and Reliability Issues
Dielectric Science and Technology/Electronics
Monday October 21, 2002
Idaho Room, First Floor, Little America Hotel
High-K Dielectrics - General
Co-Chairs: R. Singh and H. Iwai
Time | Abs# | Title |
10:00 | |
Introductory Remarks - |
10:10 | 369 |
Technology in the Internet Age - D. Buss (Texas Instruments, Inc.) |
10:50 | 370 |
Challenges for the Integration of High-k Gate Dielectrics - R. Wallace (University of North Texas) |
11:20 | 371 |
Correlation between the Material Properties of the High-K Gate Dielectrics - S. Kar (Indian Institute of Technology) and R. Singh (Clemson University) |
2:00 | 372 |
High Dielectric Constant Gate Insulator Technology using Rare Earth Oxides - H. Iwai, S.-I.
Ohmi, S. Akama, C. Ohshima, I. Kashiwagi, A. Kikuchi, J.-I. Taguchi, H. Yamamoto, I. Ueda, A.
Kuriyama, J.-I. Tonotani, Y. Kim, Y. Yoshihara, and H. Ishiwara (Tokyo Institute of Technology) |
2:30 | 373 |
High Quality ZrO2 Thin Films on <100> Si Substrates as a Gate Dielectric Material: Processing and Characterization - M.
Fakhruddin, R. Singh, K. Poole (Clemson University), and S. Kar (Indian Institute of Technology) |
2:50 | 374 |
HfO2 Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium - J. Schaeffer,
N.V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda, L. Contreras, J. Christiansen, S.
Zollner, P. Tobin, B.-Y. Nguyen, R. Nieh, M. Ramon, R. Rao, R. Hegde, and R. Rai (Motorola, Inc.) |
3:10 | |
Twenty-Minute Intermission - |
3:30 | 375 |
Electrical Characteristics Improvement of Dy2O3 Thin Films by In-situ Vacuum Anneal - H. Yamamoto, J. Taguchi, S.-I.
Ohmi, and H. Iwai (Tokyo Institute of Technology) |
3:50 | 376 |
Electrical and Physical Characterization of Zirconium-doped Tantalum Oxide Films - J.-Y.
Tewg, J. Lu, Y. Kuo (Texas A and M University), and B. Schueler (Physical Electronics) |
4:10 | 377 |
Effect of Deposition Sequence and Plasma Treatment on ALCVDTM HfO_2 n-MOSFET Properties - C. Lim, Y. Kim, A.
Hou, J. Gutt (International SEMATECH), S. Marcus, C. Pomarede (ASM America, Inc), L. Chen, G. Bease (Tokyo Electronics America, Inc), J.
Tamim, N. Chaudhary, G. Bersuker, J. Barnett, C. Young, P. Zeitzoff, G. Brown, M. Gardner, R.
Murto, and H. Huff (International SEMATECH) |
4:30 | 378 |
Characteristics of High-k Gd2O3 Films Deposited on Different Orientation of Si Substrate - I.
Kashiwagi, C. Ohshima, S.-I. Ohmi, and H. Iwai (Tokyo Institute of Technology) |
4:50 | 379 |
Hafnium-Doped Tantalum Oxide High-k Dielectrics - J. Lu, J.-Y.
Tewg, Y. Kuo (Texas A and M University), and P.C. Liu (AMD) |
Tuesday October 22, 2002
Silicate/Aluminate High-K Dielectrics and Reliability
Co-Chairs: S. Guha and J.C. Lee
Time | Abs# | Title |
8:30 | 380 |
Band Offset Energies of Zirconium (Hafneum) Silicate Alloys with Respect to Silicon -
G.L. Lucovsky, B. Raynor, Y. Zhang, D. Kang, and J. Whitten (NC State University) |
9:00 | 381 |
Defect Generation in High-k Gate Stacks : Characterization and Modelling - M.
Houssa, J.-L. Autran (University of Provence), A. Stesmans (University of
Leuven), and M. Heyns (IMEC) |
9:30 | |
Thirty-Minute Intermission - |
10:00 | 382 |
Ultra-Thin Zirconium and Hafnium Silicate Films Deposited by MOCVD on Si(100) - D.
Landheer, X. Wu (National Research Council of Canada), H.-W. Chen (National Chiao-Tung University), M. Lee (University of Toronto), S. Moisa (National Research Council of Canada), T.-Y. Huang, T.-S. Chao (National Chiao-Tung University), and Z. Lu (University of Toronto) |
10:20 | 383 |
Effect of Post Annealing on the Electrical Properties of ZrO2 and ZrAlO - M.
Mansouri, Y.-L. Chiou (University Of South Florida), Y. Ono, and S.T. Hsu (Sharp Laboratories of
America,Inc.) |
10:40 | 384 |
Improved Scalability of High-k Gate Dielectrics by using Hf-Aluminates -
T.H. Hou, J. Gutt, C. Lim (International Sematech), S. Marcus, C. Pomarede (ASM America, Inc), M. Gardner, R.
Murto, and H. Huff (International Sematech) |
11:00 | 385 |
Reliability and Plasma-induced Degradation of High-K Gate Dielectrics in MOS Devices - K.-S.
Chang-Liao (National Tsing Hua University) |
11:20 | 386 |
Stability of High-k Thin Films for Wet Process - A. Kikuchi, S.
Akama, S.-I. Ohmi, and H. Iwai (Tokyo Institute of Technology) |
11:40 | 387 |
Photoresist and Etch Residue Removal from Substrates Containing High-k Dielectrics - M. Egbe and D. Geitz (Ashland Specialty Chemical Company) |
High-K Dielectrics and Interfaces
Co-Chairs: M. Houssa and D. Misra
Time | Abs# | Title |
2:00 | 388 |
Insulating Oxides on Silicon for CMOs and Other Applications - S. Guha (IBM) |
2:30 | 389 |
Nitrogen Incorporation and High-Temperature Forming Gas Anneal for High-K Gate Dielectrics - J. Lee (The University of Texas at Austin) |
3:00 | |
Twenty-Minute Intermission - |
3:20 | 390 |
Integrity of Hafnium Silicate/Silicon Dioxide Ultrathin Films on Si - J.
Morais, L. Miotti, G.V. Soares, R.P. Pezzi, K.P. Bastos, H. Boudinov, I.J.R. Baumvol
(Universidade Federal do Rio Grande do Sul), M.R. Visokay, J.J. Chambers,
A.L.P. Rotondaro, and L. Colombo (Texas Instruments Incorporated) |
3:40 | 391 |
Suppression of Silicidation for Zirconia, Hafnia and Silicate on Silicon by Helium Annealing - K. Muraoka (Toshiba Corporation) |
4:00 | 392 |
Analysis of Electrically Active Defects at Si(100) – HfO_2 Interface - B. O'Sullivan, E. O'Connor, P. Hurley
(NMRC), H. Roussel, M. Audier, and J.-P. Senateur (INPG) |
4:20 | 393 |
Thermal Stability of the HfO2/SiOxNy-Si Interface -
K.P. Bastos, J. Morais, L. Miotti, G.V. Soares, R.P. Pezzi, H. Boudinov, I.J.R. Baumvol
(Universidade Federal do Rio Grande do Sul), R.I. Hedge, H.H. Tseng, and P.J. Tobin (Motorola) |
4:40 | 394 |
CRN Models of Amorphous Dielectric Films and Their Interfaces - D. Yu (University of Texas),
C.B. Shin (Ajou University), and G.S. Hwang (University of Texas) |
5:00 | 395 |
Non-Contact Electrical Characterization of High-Dielectric-Constant (high-k) Materials -
P.Y. Hung, B. Foran, A. Hou (International SEMATECH), X. Zhang, and C. Oroshiba
(KlA-Tencor Corp) |
Grand Ballrooms B and C, Main Level, Grand America Hotel
Poster Session
Wednesday October 23, 2002
Idaho Room, First Floor, Little America Hotel
High-K Capacitor Dielectrics
Co-Chairs: F. Gonzalez and D. Landheer
Time | Abs# | Title |
10:00 | 399 |
Ruthenium Bottom Electrode Prepared by Electroplating for High k DRAM Capacitor -
J.J. Kim, O.J. Kwon, and M.S. Kang (Seoul National University) |
10:20 | 400 |
Regional Charge Transport Characteristics of Integrated MeOx MIM Capacitors - D. Roberts, S.
Kalpat, T. Remmel, M. Sadd, M. Raymond, R. Ramprasad, E. Luckowski, C. Barron, and M. Miller (Motorola Digital) |
10:40 | 401 |
High Capacitance and Low Leakage Crystalline Ta2O5 MIM Capacitor for DRAM - W. Li and G. Sandhu (Micron Technology, Inc.) |
11:00 | 402 |
High Dielectric Constant Thin Films in TiO_2,BaO-TiO2,and BaO-SrO-TiO2 Systems via Photochemical MetalOrganic Deposition(PMOD)Processes - S.
Mukherjee, H. Madsen, P. Roman, L. Svendsen, M. Fury (EKC Technology ,Inc), S. Barstow, A.
Jeyakumar, and C. Henderson (Georgia Institute of Technology) |
11:20 | 403 |
Seed Layer Free Ruthenium Precursor for MO-CVD - N.
Oshima, T. Shibutami, K. Kawano (Tosoh Corporation), S. Yokoyama, and H. Funakubo (Tokyo Institute of technology) |
11:40 | 404 |
Tantalum Oxide MIM Capacitor and TaN Thin Film Resistor Module for Cu-Interconnected RF BiCMOS Technology - M. Raymond, D. Roberts, T.
Remmel, S. Kalpat, M. Sadd, E. Luckowski, R. Ramprasad, C. Barron, M. Miller, P.
Ellappan, P. Zurcher, C. Happ, and A. Martinez (Motorola DigitalDNA(TM) Laboratories) |
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