202nd Meeting - Salt Lake City, UT

October 20-25, 2002

PROGRAM INFORMATION

H1 - First International Symposium on High Dielectric Constant Materials: Material Science, Processing, Manufacturing and Reliability Issues

Dielectric Science and Technology/Electronics

Monday October 21, 2002

Idaho Room, First Floor, Little America Hotel

High-K Dielectrics - General

Co-Chairs: R. Singh and H. Iwai

TimeAbs#Title
10:00 Introductory Remarks -
10:10369 Technology in the Internet Age - D. Buss (Texas Instruments, Inc.)
10:50370 Challenges for the Integration of High-k Gate Dielectrics - R. Wallace (University of North Texas)
11:20371 Correlation between the Material Properties of the High-K Gate Dielectrics - S. Kar (Indian Institute of Technology) and R. Singh (Clemson University)
2:00372 High Dielectric Constant Gate Insulator Technology using Rare Earth Oxides - H. Iwai, S.-I. Ohmi, S. Akama, C. Ohshima, I. Kashiwagi, A. Kikuchi, J.-I. Taguchi, H. Yamamoto, I. Ueda, A. Kuriyama, J.-I. Tonotani, Y. Kim, Y. Yoshihara, and H. Ishiwara (Tokyo Institute of Technology)
2:30373 High Quality ZrO2 Thin Films on <100> Si Substrates as a Gate Dielectric Material: Processing and Characterization - M. Fakhruddin, R. Singh, K. Poole (Clemson University), and S. Kar (Indian Institute of Technology)
2:50374 HfO2 Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium - J. Schaeffer, N.V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda, L. Contreras, J. Christiansen, S. Zollner, P. Tobin, B.-Y. Nguyen, R. Nieh, M. Ramon, R. Rao, R. Hegde, and R. Rai (Motorola, Inc.)
3:10 Twenty-Minute Intermission -
3:30375 Electrical Characteristics Improvement of Dy2O3 Thin Films by In-situ Vacuum Anneal - H. Yamamoto, J. Taguchi, S.-I. Ohmi, and H. Iwai (Tokyo Institute of Technology)
3:50376 Electrical and Physical Characterization of Zirconium-doped Tantalum Oxide Films - J.-Y. Tewg, J. Lu, Y. Kuo (Texas A and M University), and B. Schueler (Physical Electronics)
4:10377 Effect of Deposition Sequence and Plasma Treatment on ALCVDTM HfO_2 n-MOSFET Properties - C. Lim, Y. Kim, A. Hou, J. Gutt (International SEMATECH), S. Marcus, C. Pomarede (ASM America, Inc), L. Chen, G. Bease (Tokyo Electronics America, Inc), J. Tamim, N. Chaudhary, G. Bersuker, J. Barnett, C. Young, P. Zeitzoff, G. Brown, M. Gardner, R. Murto, and H. Huff (International SEMATECH)
4:30378 Characteristics of High-k Gd2O3 Films Deposited on Different Orientation of Si Substrate - I. Kashiwagi, C. Ohshima, S.-I. Ohmi, and H. Iwai (Tokyo Institute of Technology)
4:50379 Hafnium-Doped Tantalum Oxide High-k Dielectrics - J. Lu, J.-Y. Tewg, Y. Kuo (Texas A and M University), and P.C. Liu (AMD)

Tuesday October 22, 2002

Silicate/Aluminate High-K Dielectrics and Reliability

Co-Chairs: S. Guha and J.C. Lee

TimeAbs#Title
8:30380 Band Offset Energies of Zirconium (Hafneum) Silicate Alloys with Respect to Silicon - G.L. Lucovsky, B. Raynor, Y. Zhang, D. Kang, and J. Whitten (NC State University)
9:00381 Defect Generation in High-k Gate Stacks : Characterization and Modelling - M. Houssa, J.-L. Autran (University of Provence), A. Stesmans (University of Leuven), and M. Heyns (IMEC)
9:30 Thirty-Minute Intermission -
10:00382 Ultra-Thin Zirconium and Hafnium Silicate Films Deposited by MOCVD on Si(100) - D. Landheer, X. Wu (National Research Council of Canada), H.-W. Chen (National Chiao-Tung University), M. Lee (University of Toronto), S. Moisa (National Research Council of Canada), T.-Y. Huang, T.-S. Chao (National Chiao-Tung University), and Z. Lu (University of Toronto)
10:20383 Effect of Post Annealing on the Electrical Properties of ZrO2 and ZrAlO - M. Mansouri, Y.-L. Chiou (University Of South Florida), Y. Ono, and S.T. Hsu (Sharp Laboratories of America,Inc.)
10:40384 Improved Scalability of High-k Gate Dielectrics by using Hf-Aluminates - T.H. Hou, J. Gutt, C. Lim (International Sematech), S. Marcus, C. Pomarede (ASM America, Inc), M. Gardner, R. Murto, and H. Huff (International Sematech)
11:00385 Reliability and Plasma-induced Degradation of High-K Gate Dielectrics in MOS Devices - K.-S. Chang-Liao (National Tsing Hua University)
11:20386 Stability of High-k Thin Films for Wet Process - A. Kikuchi, S. Akama, S.-I. Ohmi, and H. Iwai (Tokyo Institute of Technology)
11:40387 Photoresist and Etch Residue Removal from Substrates Containing High-k Dielectrics - M. Egbe and D. Geitz (Ashland Specialty Chemical Company)

High-K Dielectrics and Interfaces

Co-Chairs: M. Houssa and D. Misra

TimeAbs#Title
2:00388 Insulating Oxides on Silicon for CMOs and Other Applications - S. Guha (IBM)
2:30389 Nitrogen Incorporation and High-Temperature Forming Gas Anneal for High-K Gate Dielectrics - J. Lee (The University of Texas at Austin)
3:00 Twenty-Minute Intermission -
3:20390 Integrity of Hafnium Silicate/Silicon Dioxide Ultrathin Films on Si - J. Morais, L. Miotti, G.V. Soares, R.P. Pezzi, K.P. Bastos, H. Boudinov, I.J.R. Baumvol (Universidade Federal do Rio Grande do Sul), M.R. Visokay, J.J. Chambers, A.L.P. Rotondaro, and L. Colombo (Texas Instruments Incorporated)
3:40391 Suppression of Silicidation for Zirconia, Hafnia and Silicate on Silicon by Helium Annealing - K. Muraoka (Toshiba Corporation)
4:00392 Analysis of Electrically Active Defects at Si(100) HfO_2 Interface - B. O'Sullivan, E. O'Connor, P. Hurley (NMRC), H. Roussel, M. Audier, and J.-P. Senateur (INPG)
4:20393 Thermal Stability of the HfO2/SiOxNy-Si Interface - K.P. Bastos, J. Morais, L. Miotti, G.V. Soares, R.P. Pezzi, H. Boudinov, I.J.R. Baumvol (Universidade Federal do Rio Grande do Sul), R.I. Hedge, H.H. Tseng, and P.J. Tobin (Motorola)
4:40394 CRN Models of Amorphous Dielectric Films and Their Interfaces - D. Yu (University of Texas), C.B. Shin (Ajou University), and G.S. Hwang (University of Texas)
5:00395 Non-Contact Electrical Characterization of High-Dielectric-Constant (high-k) Materials - P.Y. Hung, B. Foran, A. Hou (International SEMATECH), X. Zhang, and C. Oroshiba (KlA-Tencor Corp)

Grand Ballrooms B and C, Main Level, Grand America Hotel

Poster Session

TimeAbs#Title
o396 Electrical Properties of Lanthanum Aluminate Thin Film Deposited by using MOCVD Method - J.H. Jun, J. Jun, and D.J. Choi (Yonsei University)
o397 A Study on the LaO_x Thin Film Deposited by Using DLI-MOCVD Method - J. Jun, J.H. Jun, and D.J. Choi (Yonsei University)
o398 Novel Method Preparation and Characterization of High Dielectric Constant PMN Used for Electrochemical Capacitors - X.-D. Zhou, H.U. Anderson, and W. Huebner (University of Missouri-Rolla)

Wednesday October 23, 2002

Idaho Room, First Floor, Little America Hotel

High-K Capacitor Dielectrics

Co-Chairs: F. Gonzalez and D. Landheer

TimeAbs#Title
10:00399 Ruthenium Bottom Electrode Prepared by Electroplating for High k DRAM Capacitor - J.J. Kim, O.J. Kwon, and M.S. Kang (Seoul National University)
10:20400 Regional Charge Transport Characteristics of Integrated MeOx MIM Capacitors - D. Roberts, S. Kalpat, T. Remmel, M. Sadd, M. Raymond, R. Ramprasad, E. Luckowski, C. Barron, and M. Miller (Motorola Digital)
10:40401 High Capacitance and Low Leakage Crystalline Ta2O5 MIM Capacitor for DRAM - W. Li and G. Sandhu (Micron Technology, Inc.)
11:00402 High Dielectric Constant Thin Films in TiO_2,BaO-TiO2,and BaO-SrO-TiO2 Systems via Photochemical MetalOrganic Deposition(PMOD)Processes - S. Mukherjee, H. Madsen, P. Roman, L. Svendsen, M. Fury (EKC Technology ,Inc), S. Barstow, A. Jeyakumar, and C. Henderson (Georgia Institute of Technology)
11:20403 Seed Layer Free Ruthenium Precursor for MO-CVD - N. Oshima, T. Shibutami, K. Kawano (Tosoh Corporation), S. Yokoyama, and H. Funakubo (Tokyo Institute of technology)
11:40404 Tantalum Oxide MIM Capacitor and TaN Thin Film Resistor Module for Cu-Interconnected RF BiCMOS Technology - M. Raymond, D. Roberts, T. Remmel, S. Kalpat, M. Sadd, E. Luckowski, R. Ramprasad, C. Barron, M. Miller, P. Ellappan, P. Zurcher, C. Happ, and A. Martinez (Motorola DigitalDNA(TM) Laboratories)