202nd Meeting - Salt Lake City, UT
October 20-25, 2002
PROGRAM INFORMATION
I1 - Copper Interconnects, New Contact Metallurgies and Low-K Interlevel Dielectrics
Dielectric Science and Technology/Electronics/Electrodeposition
Monday October 21, 2002
Grand Ballroom B, First Floor, Little America Hotel
Copper Deposition
Co-Chairs: G.S. Mathad and C. Reidsema-Simpson
Time | Abs# | Title |
10:00 | 408 |
Superconformal Film Growth - T.
Moffat, D. Wheeler, B. Baker, and D. Josell (NIST) |
10:20 | 409 |
Additive Behavior during Copper Electrodeposition in Acidic Solution Containing Cl-, PEG and SPS - M. Tan and J. Harb (Brigham Young University) |
10:40 | 410 |
ULSI Wiring Formation by Copper Electroplating - S. Miura, K.
Oyamada, S. Watanabe, M. Sugimoto, H. Kouzai, and H. Honma (Kanto Gakuin University) |
11:00 | 411 |
Copper Superfilling by PEG-Cl Suppression Breakdown - M.
Hayase, M. Taketani, K. Aizawa, T. Hatsuzawa (Tokyo Institute of Technology), and K. Hayabusa (Ebara Research Co., Ltd.) |
11:20 | 412 |
Superfill of Submicrometer Features from a Silver-Cyanide Electrolyte - B. Baker, T.
Moffat, D. Josell, and D. Wheeler (National Institute of Standards and Technology) |
11:40 | 413 |
Multi-Scale Simulations of Copper Electrodeposition onto a Resistive Substrate - T. Drews (University of Illinois at Urbana-Champaign), S. Krishnan (Indiana University), J. Alameda (National Center for Supercomputing Applications), D. Gannon (Indiana University), R.
Braatz, and R. Alkire (University of Illinois at Urbana-Champaign) |
Copper Deposition
Co-Chairs: C. Reidsema-Simpson and G.S. Mathad
Time | Abs# | Title |
2:00 | 414 |
Suppression by PEG and Halide Ion in Copper Electroplating - M.
Hayase, M. Taketani, T. Hatsuzawa (Tokyo Institute of Technology), and K. Hayabusa (Ebara Research
Co.,Ltd.) |
2:20 | 415 |
Effect of Suppressors on Copper Electrochemical Deposition Fill Efficiency - J. Flake, C. Simpson, and E. Acosta (Motorola) |
2:40 | 416 |
"Seedless" Copper ECD on TiN Barrier Layers - S. Kim and D. Duquette (Rensselaer Polytechnic Institute) |
3:00 | 417 |
In Situ Microscopic Observation of Spontaneous Recrystallization at Room Temperature in Electrodeposited Copper Metallization -
D.N. Buckley, S. Ahmed, and M. Serantoni (University of Limerick) |
3:20 | |
Twenty-Minute Intermission - |
3:40 | 418 |
Microstructural Evolution of Electroplated Copper During Self-Annealing - P.
Freundlich, M. Militzer, and D. Bizzotto (The University of British Columbia) |
4:00 | 419 |
Vibrational Spectroscopy of Polyethelyne Glycol and Brighteners on Copper - B. Baker, C. Yang, L. Richter, and T. Moffat (National Institute of Standards and Technology) |
4:20 | 420 |
Self-annealing Effect of Electrolessly Deposited Copper Thin Films Based on Co(II)-ethylenediamine as a Reducing Agent -
J.J. Kim, C.H. Lee, and S.H. Cha (Seoul National University) |
4:40 | 421 |
Electroless CU Deposition on Plasma Treated Tantalum Nitride -
Y.S. Lee, S.W. Hong, and J.-W. Park (Hanyang University) |
5:00 | 422 |
Microstructure and Adhesion Strength of Electroless-plated Cu Film on Self-catalyzed Cu Seeded by MEVVA - U.-S. Chen, J.-H. Lin, W.-J. Hsieh, and
H.C. Shih (National Tsing Hua University) |
Tuesday October 22, 2002
Contacts, Barrier, and Low-k Inter Level Dielectric Films
Co-Chairs: B. Baker and Y. Kuo
Time | Abs# | Title |
9:00 | 423 |
Base Contact Issues of Si/SiGe-HBTs with Emphasis on Source/Drain Contacts of CMOS Devices - J. Hohaus and H.-U. Schreiber
(Ruhr-Universitat Bochum) |
9:20 | 424 |
Comparison of Amorphous and Crystalline Tantalum Nitrides as Diffusion Barriers in Cu/FSG Structure - C.-C. Chang and J.-S. Chen (National Cheng Kung University) |
9:40 | |
Twenty-Minute Intermission - |
10:00 | 425 |
Development and Characterization of a PECVD Silicon Nitride for Damascene Applications - A. Lee, N.
Rajagopalan, M. Le, B.H. Kim, and H. M'Saad (Applied Materials, Inc.) |
10:20 | 426 |
Copper-Barrier and Hard-Mask Elaboration by Plasma-Enhanced Chemical Vapor Deposition using Organosilane Precursors - B. Remiat
(STMicroelectronics), F. Gaillard (Applied Materials), J. Durand (Institut Europeen des Membranes de Montpellier), F. Fusalba
(STMicroelectronics), V. Jousseaume, and C. Lecornec (CEA Grenoble) |
10:40 | 427 |
Plasma Modification of the Low k Polyimide Film to Further Reduce Its k Value - T. Chung, Y.
Kuo, and H. Nominanda (Texas A and M University) |
11:00 | 428 |
Structural Properties and Defect Characterisation of Plasma Deposited Carbon Doped Silicon Oxide Low-k Dielectric Films - T. Wong, V.
Ligatchev, and R. Rusli (Nanyang Technological University) |
11:20 | 429 |
The Effect of TEOS / MTES Ratio on the Structural and Dielectric Properties of Porous Silica Film - S. Yu,
T.K.S. Wong, X. Hu, and K. Pita (Nanyang Technological University) |
11:40 | 430 |
Evaluatuion of Activating Process for Fine Pattern Deposition - T.
Nishiwaki, Y. Watanabe, S. Watanabe, K. Tashiro, and H. Honma (Kanto Gakuin University) |
Low-k Inter Level Dielectric Films
Co-Chairs: G.S. Mathad and B. Baker
Time | Abs# | Title |
2:00 | 431 |
Electrical and Material Stabilities of Cu/FSG and Cu/OSG Couples at Elevated Temperatures - J.-S.
Jeng, J.-S. Chen (National Cheng Kung University), G. Lin, and J. Su (Applied Materials Taiwan) |
2:20 | 432 |
Structural and Thermal Characterization of Spin-on Porous Low-k Dielectrics - S. Yu,
T.K. Goh, T.K.S. Wong (Nanyang Technological University), C. He (Institute of Materials Research and Engineering), and S. Wu (Institute of Microelectronics) |
2:40 | 433 |
Processing and Characterization of DMDES – TEFS Hybrid Thin Films - Z. Zhang, B. Gorman, D. Mueller, and R. Reidy (University of North Texas) |
3:00 | 434 |
Supercritical CO_2 Post-Etch Cleaning of a Patterned Porous Low-K Dielectric - D. Peters (Ashland Specialty Chemical Company), K. Masuda, K.
Iijima, T. Yoshikawa (Kobe Steel, Ltd.), G. Asai, and Y. Muraoka (Dainippon Screen Mfg. Co., Ltd.) |
3:20 | |
Twenty-Minute Intermission - |
3:40 | 435 |
Plasma Curing of Porous MSQ Films - C.
Waldfried, O. Escorcia, Q. Han, and I. Berry (Axcelis Technologies, Inc.) |
4:00 | 436 |
Etch Residue Removers Compatible with Porous Low-k Dielectrics - M.
Egbe, J. Rieker, S. Ficner, and D. Durham (Ashland Specialty Chemical Company) |
4:20 | 437 |
HeH2 Plasma for Resist Stripping over Porous MSQ Low-k Films - Q. Han, C.
Waldfried, O. Escorcia, and I. Berry (Axcelis Technologies, Inc.) |
4:40 | 438 |
Film Nanotechnology - T. Khoperia (Georgian Academy of Sciences) |
Wednesday October 23, 2002
Reliability and Copper CMP
Co-Chairs: T.L. Ritzdorf and K.B. Sundaram
Time | Abs# | Title |
10:00 | 439 |
Mechanisms of Copper Removal During Chemical Mechanical Polishing - T.
Du, V. Desai (University of Central Florida), D. Tamboli (Ashland Specialty Chemical Company), V.
Chathapuram, and K. Sundaram (University of Central Florida) |
10:20 | 440 |
Electrochemical View of Copper Chemical Mechanical Planarization - Y.
Ein-Eli, E. Rabinovich, E. Rabkin, and D. Starosvetsky (The Technion-Israel institute of Technology) |
10:40 | 441 |
Electrochemical Planarization of Copper - L. Loparco and D. Duquette (Rensselaer Polytechnic Institute) |
11:00 | 442 |
Enhancement of Post Copper CMP Cleaning Using CO_2 Cryogenic Technology - S.
Banerjee, H. Chung (EcoSnow Systems, Inc.), R. Small, B. Scott, and L. Yao (EKC Technology, Inc) |
11:20 | 443 |
Post CMP Passivation of Copper Interconnects - J. Flake, S. Usmani (Motorola), J. Groschopf (AMD-Motorola Alliance), K. Cooper (Motorola),
S.P. Sun (AMD-Motorola Alliance), S. Thrasher, C. Goldberg, O. Anilturk, and J. Farkas (Motorola) |
11:40 | 444 |
Abrasive Free Polishing For ULSI Cu Damascene Interconnect -
J.V. Fang (National Chiao Tung University), M.V.S. Tsai, B.V.T. Dai (National Nano Device Laboratories), and
M.V.S. Feng (National Chiao Tung University) |
CMP
Co-Chairs: H.S. Rathore and T.L. Ritzdorf
Time | Abs# | Title |
2:00 | 445 |
Copper Chemical Mechanical Planarization Processes with Carbon Dioxide - G. Denison, P.
Visintin, and J. Desimone (University of North Carolina at Chapel Hill) |
2:20 | 446 |
The Plasma Charging Damages for Gate Oxide and Hot-Carrier Degradation and Electromigration Properties in Cu Interconnects - D.-S. Su,
J.J. Wang, C.T. Yang, D.H. Chen, H.C. Tseng, H. Chen, and S.Y. Lee (Taiwan Semiconductor Manufacturing Company) |
2:40 | 447 |
Copper Barrier Polishing Chemistries for Low-K Films - R. Small, L.
Yao, and K.Z. Kadowaki (EKC Technology, Inc.) |
3:00 | 448 |
Process Development for Copper CMP on Ultra Low-K Dielectrics - S. Hosali (Philips Semiconductors,
Eindhoven), G. Martin (Motorola Inc.), A. Gonzalez (International SEMATECH), and S. Joshi (Texas Instruments) |
3:20 | |
Twwenty-Minute Intermission - |
3:40 | 449 |
A Comprehensive Study of Liner CMP for Advanced Cu/low k Planarization - T.-C. Tsai, Z.-H. Lin, S.-C.
Hu, A. Yu, F. Yang, and L.-Y. Fang (United Microelectronic Corp.) |
4:00 | 450 |
Chemical Mechanical Polishing of Silicon Carbide and Low-k Carbon Doped Oxide Films - W. Chen, W. Gray (Dow Corning Corporation), and K. Block
(Rodel, Inc.) |
4:20 | 451 |
Improvement of Planarization Efficiency of CU Electropolishing by Additives - S.-C. Chang (National Chiao Tung University), J.-M. Shieh (National Nano Device Laboratories), C.-C. Huang (National Chiao Tung University), B.-T. Dai (National Nano Device Laboratories), and M.-S. Feng (National Chiao Tung University) |
4:40 | 452 |
Microstructure and Interfacial Reaction of Cu(Ti)/SiO2 Interconnect - C.-J. Liu and J.-S. Chen (National Cheng Kung University) |
5:00 | 453 |
Proven Extensibility of Low Damage Cu/low k CMP Process for sub-0.13um ULSI Interconnects - T.-C. Tsai, S.-C.
Hu, C.-L. Hsu, Z.-H. Lin, M.-H. Lin, and S.-H. Hsu (United Microelectronic Corp. Central Research and Development Division) |
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