202nd Meeting - Salt Lake City, UT

October 20-25, 2002

PROGRAM INFORMATION

M1 - State-Of-The-Art Program on Semiconductors XXXVII

Electronics

Tuesday October 22, 2002

Sawtooth Room, Second Floor, Little America Hotel

Co-Chairs: K. Shojima and G. Chu

TimeAbs#Title
9:00558 Bright Future for GaN-on-Silicon - A. Dadgar (Universitaet Magdeburg)
9:30559 Characteristics of in-situ Photoluminescence from GaN Electrodes - E. Harvey, C. Heffernan, N. Buckley (University of Limerick), and C. O'Raifertaigh (Waterford Institute of Technology)
9:50560 High Current Bulk GaN Schottky Rectifier - K. Ip, K.H. Baik, B. Luo, F. Ren, S.J. Pearton (University of Florida), S.S. Park, Y.J. Park (Samsung Advanced Institute of Technology), and A.P. Zhang (General Electric)
10:10 Twenty-Minute Intermission -
10:30561 AlInGaN-based UV LEDs - S. Sakai, T. Sugahara (Tokushima University), and T. Wang (Nitride Semiconductors Co., Ltd.)
11:00562 A GaN HEMT with WNx T-gate for High Temperature Application - C.Y. Fang, E.Y. Chang, S.H. Chen, Y.L. Huang, Y.-C. Lien, and H.C. Chang (National Chiao Tung University)
11:20563 Improved FET Performance by Suppression of Sheet Resistance Increase in AlGaN/GaN 2DEG Structure - K. Shiojima and N. Shigekawa (NTT Photonics Laboratories)
11:40564 Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers - S. Nigam, J. Kim, B. Luo, F. Ren (University of Florida), G. Chung, M.F. MacMillan (Sterling Semiconductor), J.R. Williams (Auburn University), and S.J. Pearton (University of Florida)

Co-Chairs: P.C. Chang and L.J. Chou

TimeAbs#Title
2:00565 HBT and pHEMT Technologies for Wireless and Lightwave Communications - Y.C. Wang, M. Chertouk, D.W. Tu, and P.C. Chao (WIN Semiconductors)
2:30566 Process Integration of CYTOP Low-k Interlevel Dielectric with GaAs Power pHEMT - C.H. Lin, P.C. Chang, F. Oshita, J. Pan, A. Wang, J. Wei, S.L. Fu, M. Bramlett, R. Parkhurst, and M. Maple (Agilent Technologies)
2:50567 Processing of Very Low Dark Current High Speed Infra-Red Photodetectors for Telecommunication - R. Mehandru, B. Luo, F. Ren (University of Florida), P. Shen, K. Aliberti (Army Research Laboratory), J.R. Lothian (Multiplex, Inc.), and S.J. Pearton (University of Florida)
3:10 Twenty-Minute Intermission -
3:30568 InGaAs Metal-Semiconductor-Metal Photodetectors Under High-Power Illumination - P. Shen, K. Aliberti, G. Dang, and M. Wrabackm (US Army Research Laboratory)
4:00569 Ultra-Low Threshold Sapphire Substrate-Bonded Top-Emitting 850 NM VCSEL Array - W. Chang, J. Liu, B. Riely, P.H. Shen, N. Das, and P. Newman (US Army Research Lab)
4:30570 A High Performance, High Yield, and High Throughput VCSEL Process Technology - H.C. Kuo, J. Shi, M. Trieu, X. Dong, H. Yao, Y.H. Wang, S. Lin, J. Chang, C.P. Kuo, and A. Liao (Luxnet Corporation)
5:00571 Improvements in Direct-Current Characteristics of Reduced Turn-On Voltage Al0.45Ga0.55As/GaAs Digital Graded Superlattice-Emitter Heterojunction Bipolar Transistors by Wet-Oxidation - M.-K. Tsai and Y.-J. Yang (National Taiwan University)

Wednesday October 23, 2002

Co-Chair: F. Ren

TimeAbs#Title
10:00572 Monolithic Integration of Optoelectronic Devices Using Quantum Well Intermixing - M. Osinski (University of New Mexico)
10:30573 A Comparison Between Cermet and Bulk Resistors Using a Blowout Testing Method - E. Sabin and J. Scarpulla (TRW, Inc.)
10:50574 Photoresponse of Spray Pyrolytically Fabricated Wide Bandgap n-TiO2 Thin Films in the Water-Splitting Reaction - S. Khan and J. Akikusa (Duquesne University)
11:10575 Interfacial Structures of Dielectrics on GaAs, SiGe, and Si - L.-J. Chou (National Tsing-Hwa University)

Co-Chairs: N. Buckley and C.H. Lin

TimeAbs#Title
2:00576 Anodic Oxidation of InP in KOH Electrolytes - C. O'Dwyer, T. Melly, E. Harvey, D.N. Buckley, V.J. Cunnane, M. Serantoni, D. Sutton, and S.B. Newcomb (University of Limerick)
2:20577 Comparison of the Behaviours of GaAs and InP in the Presence of SiMo_12O404- in Acidic Solution - A. Quennoy, A. Etcheberry, and C. Debiemme-Chouvy (Universite de Versailles)
2:40578 Influence of Co(II) Ions upon the Etching Process of N-and P-type GaAs Electrodes in Boric Acid Solutions - E. Sutter (Ecole Nationale Superieure de Chimie de Paris) and C. Debiemme-Chouvy (Universite de Versailles)
3:00 Twenty-Minute Intermission -
3:20579 Formation and Characterisation of Porous InP Layers in KOH Solutions - C. O'Dwyer, T. Melly, N. Buckley, V. Cunnane, D. Sutton, and S. Newcomb (University of Limerick)
3:40580 Study by in situ UV/vis Spectroelectrochemistry of the Oxidation of Polysulfides at a GaAs Electrode - C. Debiemme-Chouvy (Universite de Versailles), C. Wartelle, and F.-X. Sauvage (UMR CNRS 8516)
4:00581 Comparison of Oscillatory Behavior on InP Electrodes in KOH and (NH_4)2S - C. O'Dwyer, T. Melly, E. Harvey, N. Buckley, V. Cunnane, D. Sutton, and S. Newcomb (University of Limerick)
4:20582 Environmental Friendly, Fast Electrochemical Sketching of Silicon - D. Starosvetsky, M. Kobler, J. Yahalom, and Y. Ein-Eli (Technion-Israel Institute of Technology)
 

 

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