202nd Meeting - Salt Lake City, UT
October 20-25, 2002
PROGRAM INFORMATION
M1 - State-Of-The-Art Program on Semiconductors XXXVII
Electronics
Tuesday October 22, 2002
Sawtooth Room, Second Floor, Little America Hotel
Co-Chairs: K. Shojima and G. Chu
Time | Abs# | Title |
9:00 | 558 |
Bright Future for GaN-on-Silicon - A. Dadgar
(Universitaet Magdeburg) |
9:30 | 559 |
Characteristics of in-situ Photoluminescence from GaN Electrodes - E. Harvey, C.
Heffernan, N. Buckley (University of Limerick), and C. O'Raifertaigh (Waterford Institute of Technology) |
9:50 | 560 |
High Current Bulk GaN Schottky Rectifier - K.
Ip, K.H. Baik, B. Luo, F. Ren, S.J. Pearton (University of Florida), S.S. Park,
Y.J. Park (Samsung Advanced Institute of Technology), and A.P. Zhang (General Electric) |
10:10 | |
Twenty-Minute Intermission - |
10:30 | 561 |
AlInGaN-based UV LEDs - S. Sakai, T. Sugahara (Tokushima University), and T. Wang (Nitride Semiconductors Co., Ltd.) |
11:00 | 562 |
A GaN HEMT with WNx T-gate for High Temperature Application -
C.Y. Fang, E.Y. Chang, S.H. Chen, Y.L. Huang, Y.-C. Lien, and H.C. Chang (National Chiao Tung University) |
11:20 | 563 |
Improved FET Performance by Suppression of Sheet Resistance Increase in AlGaN/GaN 2DEG Structure - K. Shiojima and N. Shigekawa (NTT Photonics Laboratories) |
11:40 | 564 |
Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers - S.
Nigam, J. Kim, B. Luo, F. Ren (University of Florida), G. Chung, M.F. MacMillan (Sterling Semiconductor),
J.R. Williams (Auburn University), and S.J. Pearton (University of Florida) |
Co-Chairs: P.C. Chang and L.J. Chou
Time | Abs# | Title |
2:00 | 565 |
HBT and pHEMT Technologies for Wireless and Lightwave Communications -
Y.C. Wang, M. Chertouk, D.W. Tu, and P.C. Chao (WIN Semiconductors) |
2:30 | 566 |
Process Integration of CYTOP Low-k Interlevel Dielectric with GaAs Power pHEMT -
C.H. Lin, P.C. Chang, F. Oshita, J. Pan, A. Wang, J. Wei, S.L. Fu, M. Bramlett, R.
Parkhurst, and M. Maple (Agilent Technologies) |
2:50 | 567 |
Processing of Very Low Dark Current High Speed Infra-Red Photodetectors for Telecommunication - R.
Mehandru, B. Luo, F. Ren (University of Florida), P. Shen, K. Aliberti (Army Research Laboratory),
J.R. Lothian (Multiplex, Inc.), and S.J. Pearton (University of Florida) |
3:10 | |
Twenty-Minute Intermission - |
3:30 | 568 |
InGaAs Metal-Semiconductor-Metal Photodetectors Under High-Power Illumination - P.
Shen, K. Aliberti, G. Dang, and M. Wrabackm (US Army Research Laboratory) |
4:00 | 569 |
Ultra-Low Threshold Sapphire Substrate-Bonded Top-Emitting 850 NM VCSEL Array - W. Chang, J. Liu, B.
Riely, P.H. Shen, N. Das, and P. Newman (US Army Research Lab) |
4:30 | 570 |
A High Performance, High Yield, and High Throughput VCSEL Process Technology -
H.C. Kuo, J. Shi, M. Trieu, X. Dong, H. Yao, Y.H. Wang, S. Lin, J. Chang, C.P.
Kuo, and A. Liao (Luxnet Corporation) |
5:00 | 571 |
Improvements in Direct-Current Characteristics of Reduced Turn-On Voltage Al0.45Ga0.55As/GaAs Digital Graded Superlattice-Emitter Heterojunction Bipolar Transistors by Wet-Oxidation - M.-K. Tsai and Y.-J. Yang (National Taiwan University) |
Wednesday October 23, 2002
Co-Chair: F. Ren
Co-Chairs: N. Buckley and C.H. Lin
Time | Abs# | Title |
2:00 | 576 |
Anodic Oxidation of InP in KOH Electrolytes - C.
O'Dwyer, T. Melly, E. Harvey, D.N. Buckley, V.J. Cunnane, M. Serantoni, D. Sutton, and
S.B. Newcomb (University of Limerick) |
2:20 | 577 |
Comparison of the Behaviours of GaAs and InP in the Presence of SiMo_12O404- in Acidic Solution - A.
Quennoy, A. Etcheberry, and C. Debiemme-Chouvy (Universite de Versailles) |
2:40 | 578 |
Influence of Co(II) Ions upon the Etching Process of N-and P-type GaAs Electrodes in Boric Acid Solutions - E. Sutter
(Ecole Nationale Superieure de Chimie de Paris) and C. Debiemme-Chouvy (Universite de Versailles) |
3:00 | |
Twenty-Minute Intermission - |
3:20 | 579 |
Formation and Characterisation of Porous InP Layers in KOH Solutions - C.
O'Dwyer, T. Melly, N. Buckley, V. Cunnane, D. Sutton, and S. Newcomb (University of Limerick) |
3:40 | 580 |
Study by in situ UV/vis Spectroelectrochemistry of the Oxidation of Polysulfides at a GaAs Electrode - C. Debiemme-Chouvy
(Universite de Versailles), C. Wartelle, and F.-X. Sauvage (UMR CNRS 8516) |
4:00 | 581 |
Comparison of Oscillatory Behavior on InP Electrodes in KOH and (NH_4)2S - C.
O'Dwyer, T. Melly, E. Harvey, N. Buckley, V. Cunnane, D. Sutton, and S. Newcomb (University of Limerick) |
4:20 | 582 |
Environmental Friendly, Fast Electrochemical Sketching of Silicon - D.
Starosvetsky, M. Kobler, J. Yahalom, and Y. Ein-Eli (Technion-Israel Institute of Technology) |
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