202nd Meeting - Salt Lake City, UT

October 20-25, 2002


M2 - Narrow Bandgap Optoelectronic Materials and Devices


Monday October 21, 2002

Sawtooth Room, Second Floor, Little America Hotel

Co-Chairs: W. Chan and A.G. Baca

10:00583 Localization, Defect, and Transport Processes in MBE and MOCVD-Grown InGaAsN (2 percent N) - S.R. Kurtz (Sandia National Laboratories)
10:30584 MBE Growth and Characterization of Room Temperature High Power 2.5 um InGaAsSb QW Laser Diodes Emitting 1 W Continuous-Wave - J.G. Kim (Sarnoff Corporation), L. Shterergas (State University of New York at Stony Brook), R.U. Martinelli (Sarnoff Corporation), G.L. Belenky (State University of New York at Stony Brook), W.K. Chan, and L. Di Marco (Sarnoff Corporation)
11:00585 Origin of Improved Luminescence Efficiency After Annealing of Ga(In)NAs Materials Grown by Molecular Beam Epitaxy - W. Li, M. Pessa (Tampere University of Technology), T. Ahlgren (University of Helsinki), and J. Dekker (Helsinki University of Technology)
11:30586 Advances in InAs/InGaSb Superlattices for Very Long Wavelength Infrared Detection - G.J. Brown (Air Force Research Lab)

Co-Chairs: H.C. Kuo and R.E. Sah

2:00587 Interface Bonding Effects on Antimonide Device Properties - M.E. Flatte and W.H. Lau (University of Iowa)
2:30588 Time-Resolved Measurements of Carrier Dynamics in 6.1 Angstrom Heterostructures - T.F. Boggess, K.C. Hall, K. Gundogdu, E. Atlunkaya (University of Iowa), J.J. Zinck, W.B. Barvosa-Carter, and S.L. Skeith (HRL Labs)
3:00 Fifteen-Minute Intermission -
3:15589 MOCVD Growth and Characterization of InNAs on GaAs - A New Narrow-Gap Semiconductor (Invited Paper) - M. Osinski, A.-R. El-Emawy, N. Nuntawong, and H. Cao (University of New Mexico)
3:45590 Low Temperature Photoluminscence Studies of GaAsSbN Narrow Bandgap Quantum Wells on GaAs - E. Jones, K. Waldrip, F. Jalali, N. Modine, J. Klem, and G. Peake (Sandia National Laboratories)
4:05591 Improved Impact Ionization Rates in Superlattice-Based Short-, Mid- and Long-Wavelength Infrared Avalanche Photodiodes - C. Grein, K. Abu El-Rub (University of Illinois), M. Flatte (University of Iowa), and H. Ehrenreich (Harvard University)
4:35592 Artificial Atoms: Next Generation of Infrared Multispectral FPAs - M. Razeghi (Northwestern University)