202nd Meeting - Salt Lake City, UT
October 20-25, 2002
M2 - Narrow Bandgap Optoelectronic Materials and Devices
Monday October 21, 2002
Sawtooth Room, Second Floor, Little America Hotel
Co-Chairs: W. Chan and A.G. Baca
||Localization, Defect, and Transport Processes in MBE and MOCVD-Grown InGaAsN (2 percent N) - S.R. Kurtz
(Sandia National Laboratories)|
||MBE Growth and Characterization of Room Temperature High Power 2.5 um InGaAsSb QW Laser Diodes Emitting 1 W Continuous-Wave -
J.G. Kim (Sarnoff Corporation), L. Shterergas (State University of New York at Stony Brook),
R.U. Martinelli (Sarnoff Corporation), G.L. Belenky (State University of New York at Stony Brook),
W.K. Chan, and L. Di Marco (Sarnoff Corporation)|
||Origin of Improved Luminescence Efficiency After Annealing of Ga(In)NAs Materials Grown by Molecular Beam Epitaxy - W. Li, M. Pessa
(Tampere University of Technology), T. Ahlgren (University of Helsinki), and J. Dekker (Helsinki University of Technology)|
||Advances in InAs/InGaSb Superlattices for Very Long Wavelength Infrared Detection -
G.J. Brown (Air Force Research Lab)|
Co-Chairs: H.C. Kuo and R.E. Sah
||Interface Bonding Effects on Antimonide Device Properties -
M.E. Flatte and W.H. Lau (University of Iowa)|
||Time-Resolved Measurements of Carrier Dynamics in 6.1 Angstrom Heterostructures -
T.F. Boggess, K.C. Hall, K. Gundogdu, E. Atlunkaya (University of Iowa), J.J.
Zinck, W.B. Barvosa-Carter, and S.L. Skeith (HRL Labs)|
||Fifteen-Minute Intermission - |
||MOCVD Growth and Characterization of InNAs on GaAs - A New Narrow-Gap Semiconductor (Invited Paper) - M.
Osinski, A.-R. El-Emawy, N. Nuntawong, and H. Cao (University of New Mexico)|
||Low Temperature Photoluminscence Studies of GaAsSbN Narrow Bandgap Quantum Wells on GaAs - E. Jones, K.
Waldrip, F. Jalali, N. Modine, J. Klem, and G. Peake (Sandia National Laboratories)|
||Improved Impact Ionization Rates in Superlattice-Based Short-, Mid- and Long-Wavelength Infrared Avalanche Photodiodes - C.
Grein, K. Abu El-Rub (University of Illinois), M. Flatte (University of Iowa), and H. Ehrenreich (Harvard University)|
||Artificial Atoms: Next Generation of Infrared Multispectral FPAs - M. Razeghi (Northwestern University)|