202nd Meeting - Salt Lake City, UT
October 20-25, 2002
PROGRAM INFORMATION
M3 - High Purity Silicon
Electronics
Monday October 21, 2002
Arizona Room, First Floor, Little America Hotel
Crystal Growth and Defect Control
Co-Chairs: C. Claeys and M. Watanabe
Time | Abs# | Title |
2:00 | 593 |
The Impact of Wafer Topography Issues on the Next Generation Process - T. Fukuda, M.
Watanbe, M. Yoshise, Y. Shimizu, S. Akiyama, and M. Hashimoto (JEITA) |
2:30 | 594 |
Grown-in Microdefects in Silicon as a Guide to the Properties of Point Defects - V. Voronkov and R. Falster
(MEMC Electronic Materials) |
3:00 | 595 |
Dynamics of Point Defects and Formation of Microdefects in Czochralski Crystal Growth: Modeling, Simulation, and Experiments - M. Kulkarni
(MEMC Electronic Materials, Inc.), V. Voronkov, and R. Falster (MEMC Electronic Materials) |
3:20 | |
Twenty-Minute Intermission - |
3:40 | 596 |
Simulation of Oxide Formation and Point Defect Dynamics in Silicon: The Role of Oxide Morphology - Z. Wang and R. Brown (Department of Chemical Engineering) |
4:10 | 597 |
Simulation of Silicon Cz Growth: Where We Are Now - O.
Anttila, M. Laakso, J. Paloheimo (Okmetic Oyj), J. Heikonen, J. Ruokolainen, and V. Savolainen (Center fo Scientific Computing, Ltd.) |
4:30 | 598 |
High-Speed Growth of FZ Silicon for Photovoltaics - A.
Luedge, H. Riemann, and B. Hallmann-Seiffert (Institute of Crystal Growth) |
4:50 | 599 |
Observation of Ring-OSF Nuclei in As-Grown CZ Silicon Crystals by Highly Selective Reactive Ion Etching - K. Nakashima (Toyota Central R and D Labs., Inc.), K. Nakamura, T. Saisyoji (Komatsu Electronic Metals
Co.,Ltd.), Y. Watanabe, Y. Mitsushima (Toyota Central R and D Labs., Inc.), and N. Inoue (Osaka Prefecture University) |
5:10 | 600 |
On the Nucleation and Growth of Bulk Stacking Faults in Cz Silicon - J.
Vanhellemont, O. De Gryse, and P. Clauws (Ghent University) |
Tuesday October 22, 2002
Impurities in Silicon
Co-Chairs: O. Anttilla and V. Voronkov
Time | Abs# | Title |
8:30 | 601 |
Grown-in Defects in Nitrogen-doped Czochralski Silicon - D. Yang
(Zhejiang University) |
9:00 | 602 |
Measurement of Nitrogen Concentration in CZ-Si - A.
hashimoto, T. Matsumoto, and N. Inoue (Osaka Prefecture University) |
9:20 | 603 |
Segregation of Nitrogen in CZ Silicon - N. Inoue (Osaka Prefecture University) |
9:40 | 604 |
Theoretical Analysis of Nitrogen Complexes in CZ Si - D.
Funao, I. Ohkubo, N. Inoue (Osaka Prefecture University), A. Karoui, F. Karoui, and G. Rozgonyi (North Carolina State University) |
10:00 | |
Twenty-Minute Intermission - |
10:20 | 605 |
Low Temperature Doping of Silicon by Hydrogen Plasma Treatments - R. Job, A.
Ulyashin, W. Fahrner (University of Hagen), E. Simoen, C. Claeys (IMEC), F.-J.
Niedernostheide, and H.-J. Schulze (Infineon AG) |
10:50 | 606 |
Surface Structure of Hydrogen Annealed Silicon Wafer using Ozonized Water and Dilute HF Cleaning - H. Kurita, K.
Izunome, H. Nagahama (Toshiba Ceramics Co., Ltd), T. Ino, J. Yamabe, and N. Sakurai (Toshiba Corporation) |
11:10 | 607 |
Dislocation Locking by Oxygen in Silicon: New Insights to Oxygen Diffusion at Low Temperatures - S.
Senkader, P. Wilshaw (University of Oxford), and R. Falster (MEMC Electronic Materials
SpA) |
11:40 | 608 |
Chemical and Structural Characterization of Oxide Precipitates in Heavily Boron Doped Silicon by Infrared Spectroscopy and Transmission Electron Microscopy - O. De
Gryse, P. Clauws, J. Vanhellemont (Ghent University), O. Lebedev, J. Van Landuyt (University of
Antwerp-EMAT), E. Simoen, and C. Claeys (IMEC) |
Process Induced Defects in Silicon
Co-Chairs: N. Inoue and P. Rai-Choudhury
Time | Abs# | Title |
2:00 | 609 |
Stress-Induced Dislocations in Silicon Device Structures - I.
Peidous, K. Loiko, D. Simpson (Dallas Semiconductor), and H. Huff (International
SEMATECH) |
2:30 | 610 |
Backside Grinding Induced Stress Measurement by Raman Spectroscopy - M. Watanabe, Y.
Kozuki, Y. Tomitsuka (SEZ Japan, Inc.), T. Nakamura, and A. Inoue (Center for Analytical Chemistry and Science, Inc.) |
2:50 | 611 |
Detection of Metal Contamination in Internally Gettered Wafers -
M.L. Polignano, P. Bacciaglia, D. Caputo, C. Clementi (ST Microelectronics), B. Padovani
(INFM-MDM Laboratory), F. Priolo (University of Catania), and T. Simpson (Shin-Etsu Handotai Europe) |
3:10 | 612 |
Analytical Approximations for the Distributions of Substitutional Transition Metal Defects in Silicon Float Zone Crystals - H. Lemke
(Universitat Berlin) |
3:30 | |
Twenty-Minute Intermission - |
3:50 | 613 |
Gettering and Lifetime Engineering in Silicon Wafers - S.
Martinuzzi, O. Palais, and I. Perichaud (University of Marseilles) |
4:20 | 614 |
Sensitive Copper Detection in P-Type CZ Silicon Using Microwave Photoconductive Decay - H.
Vainola, M. Yli-Koski, A. Haarahiltunen, and M. Palokangas (Helsinki University of Technology) |
4:40 | 615 |
Topography Change with Multilayer Oxidation at SiO\_2/Si(111) Interfaces - D.
Hojo, N. Tokuda, and K. Yamabe (University of Tsukuba) |
5:00 | 616 |
Diode Analysis of Deep Submicron CMOS p-well Implantation Damage - A.
Poyai, E. Simoen, C. Claeys, and R. Rooyackers (IMEC) |
5:20 | 617 |
New Method for Accurate Determination of the Electric-Field Enhancement in Junctions - Theoretical Model and Application to STI Diodes with High Fields - A. Czerwinski (Institute of Electron Technology), E.
Simoen, A. Poyai, and C. Claeys (IMEC) |
5:40 | 618 |
Defect-Reactions of Copper in Silicon - S. Knack, J. Weber (TU Dresden), and S.K. Estreicher (Texas Technical University) |
Wednesday October 23, 2002
Process and Irradiation-induced Defects
Co-Chairs: T. Shaffner and D. Schroder
Time | Abs# | Title |
10:00 | 619 |
Photoluminescence Intensity Analysis In Application To Contactless Characterization Of Silicon Wafers - A.
Buczkowski, B. Orschel, S.-B. Kim, S. Rouvimov, B. Snegirev, M. Fletcher, and F. Kirscht
(SUMCO USA) |
10:30 | 620 |
Local Electrical Characteristics of Cu-Contaminated SiO2 Thin Films - N. Tokuda (University of Tsukuba), S. Yamasaki (Advanced Semiconductor Reseach Center), K. Miki
(Nanotechnology Reseach Institute), and K. Yamabe (University of Tsukuba) |
10:50 | 621 |
Influence of Irradiation Induced Defects on the Electrical Preformance of Power Devices - H.-J. Schulze, F.-J.
Niedernostheide, M. Schmitt (Infineon Technologies), U. Kellner-Werdehausen (Eupec), and G. Wachutka (Munich University of Technology) |
11:20 | 622 |
Impact of High-Temperature Electron Irridation on the Electrical Paramters of N-Type CZ Silicon - V.
Neimash, A. Kraitchinskii, N. Kras'ko, V. Tischenko, V. Voitovych (National Academy of Science of Ukraine), E.
Simoen, and C. Claeys (IMEC) |
11:40 | 623 |
In Situ TEM Investigation of Electron Beam Irradiation of Nitrogen Doped Czochralski Silicon - N. Stoddard, A.
Karoui, G. Duscher, and G. Rozgonyi (North Carolina State University) |
Alternative Silicon Substrates and Structures
Co-Chairs: H. Huff and E. Simoen
Time | Abs# | Title |
2:00 | 624 |
Smart-Cut®: A Generic Layer Transfer Solution for High Volume SOI Production - C. Maleville
(SOITEC SA) |
2:30 | 625 |
Electrical and Structural Characterization of Silicon on Silicon Bonded Interfaces - P. McCann (Analog Devices), D. Nicholson, H. Gamble (Queen's University), and A. Nevin (Analog Devices) |
2:50 | 626 |
Epitaxial Wafers Prepared by Hydrophobic Wafer Bonding - M. Reiche
(Max-Planck-Institut für Mikrostrukturphysik), E. Hiller, and D. Stolze (CIS Institut fur Mikrosensorik
gGmbH) |
3:10 | 627 |
Fabrication of 3-D Structure on P-type Silicon using Electrochemical Etching - S.
Izuo, F. Saitoh, H. Ohji, T. Fukami (Mitsubishi Electric Corp.), P.J. French (T.U. Delft), and K. Tsutsumi (Mitsubishi Electric Corp.) |
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