202nd Meeting - Salt Lake City, UT

October 20-25, 2002

PROGRAM INFORMATION

N2 - Sixth International Symposium on Thin Film Transistor Technologies VI (TFTTVI)

Electronics/Dielectric Science and Technology

Monday October 21, 2002

Grand Ballroom A Reception, Main Level, Grand America Hotel

Amorphous and Microcrystalline Silicon TFTs

Co-Chairs: Y. Kuo and D. Ast

TimeAbs#Title
10:00630 Large TFT-LCD Manufacturing Technology - C.-H. Hong (LG.Philips LCD)
10:30631 A Nano-Modulated Gate Dielectric and Performance of Amorphous Silicon Thin-Film Transistors - M. Ando, M. Kawasaki, M. Wakagi, and K.-I. Onisawa (Hitachi, Ltd.)
10:45632 Low Temperature (<150C) a-Si:H Films for Large Area Electronic Applications - R.B.M. Cross, T. Pease, D. Oxley, F. Clough, and E. Sankara Narayanan (De Montfort University)
11:00633 a-Si:H TFT Circuit Integration on Glass and Plastic Substrates - A. Nathan, A. Sazonov, D. Striakhilev, P. Servati, and K. Karim (University of Waterloo)
11:30634 Effect of Mechanical and Electrical Stress on the Performance of an a-Si:H TFT on Plastic Substrate - S.H. Won, C.B. Lee, H.C. Nam, J.H. Hur, and J. Jang (Kyung Hee University)
11:45635 Thin Film Transistors of Nanocrystalline Silicon Deposited at 150ircC - I.-C. Cheng and S. Wagner (Princeton University)

Polycrystalline Silicon TFTs (I)

Co-Chairs: Y. Nakata and A. Nathan

TimeAbs#Title
2:00636 A Novel Self-Aligned Ultra-Thin Elevated Channel Low Temperature CMOS Poly-Si TFT - Z. Xiong, H. Liu (Hongkong University of Science and Technology), C. Zhu (National University of Singapore), and J.K.O. Sin (Hongkong University of Science and Technology)
2:15637 Development of Poly-Si CMOS TFT Using Counter Doping Process - J. Yang, S. Yu, J. Gim, M. Yang, and C. Kim (LG.Philips LCD Inc.)
2:30638 Polysilicon CMOS TFTs Inverters with a Gate Silicon Oxide Deposited using PECVD with Hexamethyldisiloxane (HMDSO) - G. Gautier, N. Coulon (IETR), C. Viana (2LSI), S. Crand (IETR), N. Morimoto (2LSI), and O. Bonnaud (IETR)
2:45639 Location-Control of Large Grains by u-Czochralski (Grain Filter) Process and Its Application to Single- - R. Ishihara (Delft University of Technology)
3:15 Fifteen-Minute Intermission -
3:30640 Dynamic Characteristics of Single Grain Silicon TFTs - F. Yan, P. Migliorato, N. Bavidge (Cambridge University), and R. Ishihara (Delft University of Technology)
3:45641 Optimization of Sequential Lateral Solidification Processes for High Performance TFT Applications - B. Turk, P. van der Wilt, R. Sposili, A. Limanov, and J. Im (Columbia University)
4:15642 Parametric Investigation of 2-shot SLS-processed Polycrystalline Silicon TFTs - M.A. Crowder, M. Moriguchi, Y. Mitani, and A.T. Voutasas (Sharp Laboratories of America, Inc.)
4:30643 Microscopic Beam Profile and its Relationship with the Poly-Si Film Morphology Grown Laterally by a Phase-Modulated Excimer-laser Crystallization Method - Y. Kimura, M. Jyumonji, M. Hiramatsu, M. Nishitani, and M. Matsumura (Advanced LCD Technologies Development Center Co., Ltd.)

Tuesday October 22, 2002

Polycrystalline Silicon TFTs (II)

Co-Chair: J. Jang

TimeAbs#Title
8:15644 High Performance Poly-Si TFTs on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization - A. Hara, F. Takeuchi, M. Takei, K. Suga, K. Yoshino, M. Chida, Y. Sano, T. Kakehi, Y. Mishima, and N. Sasaki (Fujitsu Laboratories Limited)
8:45645 Device and Process Technology Requirements for Next-Generation, Ultra-High-Performance Poly-Si TFTs - A. Voutsas (Sharp Labs of America)
9:15646 Polysilicon TFTs on Plastic Substrates - P. Smith, P. Carey, P. Wickboldt, D. Toet, T. Sasagawa, and S. Ram (FlexICs, Inc.)
9:45647 Transfer Approach Toward Fabricating Poly-Si TFTS on Plastic Substrates - H. Li, Y. Lee, and S. Fonash (Pennsylvania State University)
10:00 Fifteen-Minute Intermission -

Crystallization, Etching, Deposition, Hydrogenation, and Metallization (I)

Co-Chairs: S. Fonash and J. Jang

TimeAbs#Title
10:15648 Polysilicon TFTs Made by Using Different Crystallization Techniques - T. Mohammed-Brahim, O. Bonnaud, and Y. Helen (Universite Rennes I)
10:45649 Ni Silicide Mediated Crystallization of Amorphous Silicon Thin Film on Glass at 360oC - S.J. Park, K.H. Kim, W.S. Sohn, J.H. Choi, and J. Jang (Kyung Hee University)
11:00650 Low Temperature Polycrystalline Silicon Thin Film Transistors Fabricated by Electroless Plating Ni Induced Crystallization of Amorphous Si - C.-W. Chao, Y.S. Wu, Y.-C. Chen, G.-R. Hu, and M.-S. Feng (National Chiao Tung University)
11:15651 The Effects of Oxygen Concentration in Ni Film on the Metal Induced Crystallization of Amorphous Silicon - Y.-D. Lin, Y.S. Wu, C.-W. Chao, and G.-R. Hu (National Chiao Tung University)
11:30652 The Effect of The Native Oxide Layer on The Mechanism of Metal-Induced Crystallization of a-Si:H - M. Barghouti and H. Naseem (University of Arkansas)
11:45653 The Effects of Pd2Si on The Electroless Plating Pd Induced Crystallization of Amorphous Silicon Thin Films - H. Tian Jiun, H. Guo-Ren, W. YewChung Sermon, and C. Chi-Wei (National Chiao Tung University)

Crystallization, Etching, Deposition, Hydrogenation, and Metallization (II)

Co-Chairs: O. Bonnaud and R. Ishihara

TimeAbs#Title
2:00654 High Quality TEOS Silicon Oxide deposited at Low Temperature for TFT Gate Dielectric Application - N. Morimoto (University of Sao Paulo)
2:30655 Low-Temperature-Proceeded Gate Insulator for Poly-Si TFTs by Combination of Photo-Oxidation and PECVD - Y. Nakata, T. Okamoto, M. Goto, and K. Azuma (Advanced LCD Tech. Development Center Co., Ltd.)
2:45656 Electrical Properties of Room Temperature SiO_2 Deposited by a Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma - G. Isai, A. Kovalgin, J. Holleman, P. Woerlee, and H. Wallinga (University of Twente)
3:00657 Effects of Plasma Treatments on the Characteristics of Poly-Si Thin-Film Transistors Having Electrical Junctions Induced by a Bottom Sub-Gate - C.-M. Yu (National Chiao-Tung University), H.-C. Lin (National Nano Device Laboratories), T.-F. Lei, and T.-Y. Huang (National Chiao-Tung University)
3:15658 Schottky Barrier Poly-Si Thin-Film Transistors with Nano-scale Channel Width - H.-C. Lin (National Nano Device Laboratories), M.-H. Lee (National Chiao-Tung University), F.-J. Hou (National Nano Device Laboratories), M.-F. Wang, and T.-Y. Huang (National Chiao-Tung University)
3:30 Fifteen-Minute Intermission -
3:45659 Electroless Deposition of Thin Metallic Films and Alloys - T. Khoperia (Georgian Academy of Sciences)
4L00660 On Gas-Pahse Depletion During LPCVD of GeSi Films using GeH_4/SiH4 AND GeH4/Si2H6 Gas Sources - A. Kovalgin and J. Holleman (University of Twente)
4:15661 Reactive Ion Etching and Via Opening in Low Permittivity Inter-level Dielectric Films for Pixelated TFT Arrays - R. Jeyakumar, K. Karim, S. Sivoththaman, and A. Nathan (University of Waterloo)
4:30662 Characteristics of Schottky Barrier Poly-Si Thin-Film Transistors with Excimer Laser Annealing Treatment - K.-L. Yeh, M.-H. Lee, H.-C. Lin, R.-W. Tsai, and T.-Y. Huang (National Chiao-Tung University)

Grand Ballrooms B and C, Main Level, Grand America Hotel

Poster Session

TimeAbs#Title
o663 Low Temperature Formation of Molybednum and Chromium Silicides on P-doped Amorphous Semiconductors - P. Savarimuthu and A. Nathan (University of Waterloo)

Wednesday October 23, 2002

Grand Ballroom A Reception, Main Level, Grand America Hotel

Devices, Modeling, and Characterization

Co-Chair: A. Voutsas

TimeAbs#Title
10:15664 Simulation and Modeling of Nanocrystalline Silicon Thin Film Transistors - B. Iniguez, D. Dosev, J. Pallares, L. Marsal (Universitat Rovira i Virgili), and T. Ytterdal (Norwegian University of Science and Technology)
10:45665 Conduction and Low-Frequency Noise:Diagnostic Tools for Low-Temperature (< 600C) Polysilicon Thin Film Transistor Technology - L. Pichon (ISMRA/Universite), A. Mercha (IMEC), O. Bonnaud (CNRS - UMR 6164), and R. Carin (ISMRA/Universite)
11:15666 Electrical Characterization of TFTs on Excimer Laser Crystallized Si Film - F. Simon, H.-J. Kahlert (Microlas Lasersystem GmbH), R. Ishihara, P.C. van der Wilt (TU Delft), M. Nerding, and H.-P. Strunk (Universitat Erlangen)
11:30667 Electrostatic Discharge Protection in a-Si:H TFT Circuits - N.T. Golo (Universite of Twente), F.G. Kuper (Philips Semiconductors), T. Mouthaan (Universite of Twente), and M. Pitt (Philips Mobile Display Systems)

New, Novel Applications and Materials

Co-Chairs: T. Mohammed-Brahim and M. Shur

TimeAbs#Title
2:00668 A Highly Stress-immune and High-performance Poly-Si TFT for System-in Displays - T. Shiba, M. Hatano, M. Ohkura, T. Itoga, and T. Miyazawa (Hitachi, Ltd.)
2:30669 Amorphous Silicon Thin-Film Transistor for Active-Matrix Field Emission Display - Y.-H. Song (Electronics and Telecommunications Research Institute)
3:00670 Polysilicon TFT Magnet Sensors - F. Le Bihan, E. Carvou, and O. Bonnaud (Groupe de Microelectronique)
3:30 Fifteen-Minute Intermission -
3:45671 Growth of Pentacene Films for Thin Film Transistor Applications - G. Malliaras (Cornell Universtity)
4:15672 Boron-doped a-Si:H Thin Film Deposition Process and Applications in p-channel Thin Film Transistor and Photodiode for He-Ne Laser Light Detection - Y. Kuo, H. Nominanda (Texas A and M University), M. Ristova (University at Skopje), H.H. Lee, and J.-Y. Tewg (Texas A and M University)
4:30 Concluding Remarks- Y. Kuo -