202nd Meeting - Salt Lake City, UT
October 20-25, 2002
PROGRAM INFORMATION
O1 - Diagnostic Techniques for Semiconductor Materials and Devices
Electronics/The International Society for Optical Engineering (SPIE)
Thursday October 24, 2002
Imperial Ballroom C, Main Floor, Grand America Hotel
Overview of Techniques
Co-Chairs: D.K. Schroder, T.J. Shaffner, and M. Tajima
Impurities, Capacitance, and Optical
Co-Chairs: D.K. Schroder, T.J. Shaffner, and M. Tajima
Time | Abs# | Title |
2:00 | 685 |
Direct Observation of Substitutional and Interstitial Fe atoms in Si by High-Temerature and In-Beam Mossbauer Spectroscopy - Y. Yoshida (Shizuoka Institute of Science and Technology) |
2:30 | 686 |
Quantitative Evaluation of Iron at the Silicon Surface After Wet Cleaning Treatments - C.
Carpanese, P. Bacciaglia, D. Caputo, M.L. Polignano (ST Microelectronics), P.
Lazzeri, M. Bersani, L. Vanzetti (ITC-irst), P. Pianetta (SLAC), and L. Moro (SRI International) |
2:45 | 687 |
Influence of Cobalt Contamination in the Measurement of Diffusion Length of P-type CZ Silicon Wafers - N.
Pic, M.L. Polignano, D. Caputo, G. Salva (STMicroelectronics), M. Sardo (Metron Technology), and A. Danel
(CEA / LETI) |
3:00 | 688 |
Applying Microwave Photoconductive Decay Method to Copper Detection in p-type Silicon - H.
Väinölä, M. Yli-Koski, A. Haarahiltunen, and M. Palokangas (Helsinki University of Technology) |
3:15 | |
Fifteen-Minute Intermission - |
3:30 | 689 |
Nitrogen Concentration Measurement of CZ Si - N. Inoue (Osaka Prefecture University), N.
Fujiyama, and H. Yagi (JEITA) |
4:00 | 690 |
Extraction of the Capacitance of Ultrathin High-K Gate Dielectrics - S. Kar (Indian Institute of Technology) |
4:15 | 691 |
Optical Surface Analysis of Transparent Substrates for Manufacturing Applications - L.
Bechtler, V. Velidandla, and G. Lane (Candela Instruments) |
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