204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society

October 12-October 16, 2003

PROGRAM INFORMATION

F1 - Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues

Dielectric Science and Technology/Electronics

Monday, October 13, 2003

Diamond Room, Ground Level

Interface Issues

Co-Chairs: P. Chalker and R. Singh

TimeAbs#Title
10:00532 Tailoring High-k/Silicon Interface for Nanoelectronics Applications - J. Chang (UCLA)
10:30533 Reducing the Interfacial Formation of SiO_x in HfO2/Si MOS Structures: A Study in Pre-deposition cleaning and Surface Oxidation and Post-deposition Annealing - S. Gangopadhyay, H. Harris, K. Choi, N. Biswas, I. Chary, N. Mehta, G. Kipshidze (NanoTech Center, Texas Tech University), L. Xie, M. White (Lehigh University), and H. Temkin (NanoTech Center, Texas Tech University)
11:00534 Influence of the 5 TaNx Interface Layer on Dielectric Properties of the Zr-doped TaOx High-k Film - J.-Y. Tewg, J. Lu, and Y. Kuo (Texas A and M University)
11:20535 Plasma Modification of Hf High k Dielectrics: Effects of Nitridation and Silicon Nitride Deposition - W. Tsai, J. Chen, E. Young, and S. DeGendt (Intel Corporation/IMEC)
11:40536 Method for Determining the Effectiveness of Silicon Nitride as a barrier layer for HfO2 - H. Kraus, J. Snow, P. van Doorne, P. Mertens (IMEC), and F. Kovacs (SEZ)
12:00537 Effect Of Surface Preparation On High-k Gate Stack Performance - N. Moumen, J. Barnett, R. Murto, M. Gardner, B.H. Lee, G. Bersuker, and H. Huff (International SEMATECH)

Deposition Methods and Processing I

Co-Chair: J. Chang

TimeAbs#Title
2:00538 Some Recent Developments In The Chemical Vapor Deposition of Electroceramic Oxides - P. Chalker and A. Jones (University of Liverpool)
2:30539 A Comparative Study of Erbium Oxide and Gadolinium Oxide High-k Dielectric Thin Films Grown by low-pressure Metalorganic Chemical Vapour Deposition (MOCVD) using b-Diketonates as Precursors - M. Singh, C. Thakur, K. Shalini (Indian Institute of Science), T. Shripathi (Inter University Consortium), N. Bhat, and S. Shivashankar (Indian Institute of Science)
2:50540 HfONx High-k Layers Deposited by MOCVD in Mixed Gas Flows of N2O and O2 - C. Zhao, S. Van Elshocht, T. Conard, Z. Xu, M. Caymax, S. DeGendt, and M. Heyns (IMEC)
3:10541 Contamination of SiO2 by Aqueous Zirconium and Hafnium Species - V. Lowalekar, V. Pandit, S. Raghavan, H. Parks (The University of Arizona), and J. Jeon (Advanced Micro Devices)

Electrical Characterization I

Co-Chair: S. Gangopadhyay

TimeAbs#Title
4:00542 Internal Photoemission over High-k Insulating Barriers - V. Afanas'ev and A. Stesmans (University of Leuven)
4:30543 Leakage Current Behavior for HfO2 Thin Films - M. Jones and D. Norton (University of Florida)
4:50544 Experimental Values of a Quantization Index of the Accumulation Layers of Different High-K Gate Dielectrics - R. Singh, M. Bhagat, S. Bhatia, T. Kachru, and S. Kar (Indian Institute of Technology)
5:10545 Electrical Characteristics of High-k Stack Gate Dielectric Thin Films with La_2O3 as Buffer Layer - I. Ueda, S.-I. Ohmi, and H. Iwai (Tokyo Institute of Technology)
5:30546 Low-frequency Noise Characteristics of MISFET's with La_2O3 Gate Dielectrics - H. Sauddin, Y. Yoshihara, S.-I. Ohmi, K. Tsutsui, and H. Iwai (Tokyo Institute of Technology)

Tuesday, October 14, 2003

Deposition Methods and Processing II

Co-Chair: D. Landheer

TimeAbs#Title
8:30547 Evaluation of High-k Dielectric Gate Oxides Made by Atomic Layer Deposition from Different Zr and Hf Precursors - M. Leskela, K. Kukli, and M. Ritala (University of Helsinki)
9:00548 Tensile Strain in Si due to Expansion of Lattice Spacings in CeO_2 Epitaxially Grown on Si (111) - Y. Nishikawa, D. Matsushita (Toshiba Corporation), N. Satou, M. Yoshiki (Toshiba Nanoanalysis Corporation), T. Schimizu, T. Yamaguchi, H. Satake, and N. Fukushima (Toshiba Corporation)
9:20 Forty-Minute Intermission
10:00549 Selective Wet Etching of Hf-based Layers - M. Claes, V. Paraschiv, H. Boutkabout, S. De Gendt, O. Richard, R. Lindsay, W. Boullart, and M. Heyns (IMEC vzw)
10:20550 Alternating Pulse Deposition of High-k Metal Oxide Thin Films using Hf(NO_3)4 as a Metal and an Oxygen Source with Multiple in-situ Annealing - J.F. Conley, Jr., Y. Ono, D. Tweet, G. Stecker (Sharp Labs of America), R. Solanki (Oregon Graduate Institute School of Science and Engineering), and W.W. Zhuang (Sharp Labs of America)
10:40551 Improvement of Electrical Prpperties of Alumina Films by Nitrogen Added Plasma Enhanced Atomic Layer Deposition - J.W. Lim, S.J. Yun, and J.H. Lee (Electronics and Telecommunications Research Institute (ETRI))

Diamond room, Ground Level

Metal Gates

Co-Chair: V. Afanas'ev

TimeAbs#Title
11:00552 Characterization of Resistivity and Work Function of Sputtered-TaN Film for Gate Electrode Applications - C. Kang, H. Cho, Y. KIm, R. Choi, A. Sharhriar, C. Kang, C. Choi, S. Rhee, and J. Lee (The University of Texas at Austin)
11:20553 NbO as a Gate Electrode for NMOSFETs - W. Gao, J. Conley, and Y. Ono (Sharp Labs of America)
11:40554 Novel Iridium Precursor for MOCVD - N. Oshima (TOSOH Corporation), K. Kawano, M. Takamori, T. Yamakawa (Sagami Chemical Research Center), S. Watari, H. Fujisawa, and M. Shimizu (Himeji Institute of Technology)
12:00555 Advanced Ruthenium Precursors for Thin Film Deposition - D. Thompson, G. Piotrowski, J. Peck, M. Litwin, and C. Hoover (Praxair Electronics)

Diamond Room, Ground Level

Silicates and Effects of Post-Deposition Treatments

Co-Chair: Stefan De Gendt

TimeAbs#Title
2:00556 Physical and Electrical Stability of HfSiON Dielectrics - J.J. Chambers, M. Quevedo-Lopez, M.R. Visokay, H. Bu, A. Shanware, and L. Colombo (Texas Instruments Inc.)
2:30557 Densification and Crystallization Phenomena in Hf-silicates Deposited by MOCVD - B. Crivelli, M. Alessandri, S. Alberici, M. Climent, A.C. Elbaz, G. Pavia (STMicroelectronics), C. Wiemer (Laboratorio MDM-INFM), G. Cautiero, and L. Date (Applied Materials)
2:50558 Effects of NH3 Annealing on High-k HfSiON/HfO2 Gate Stack Dielectrics - H.-J. Cho, C.Y. Kang, C.S. Kang, Y.H. Kim, R. Choi, A. Shahriar, C.H. Choi, S.J. Rhee, and J. Lee (The University of Texas at Austin)
3:10559 Nitridation of HfSiO Thin Films Deposited by Atomic Layer Deposition - Y. Senzaki, H. Chatham, R. Higuchi, C. Bercaw, and J. DeDontney (ASML Thermal Division)

Thermal Stability and Compatibility with CMOS Processing

Co-Chair: H. Iwai

TimeAbs#Title
4:00560 Scaling of Hf-based Gate Dielectrics Integration with Polysilicon Gates - S. De Gendt, M. Caymax (IMEC), J. Chen (ISMT assignee at IMEC), M. Claes, T. Conard, A. Delabie, W. Deweerd (IMEC), V. Kaushik, A. Kerber (ISMT assignee at IMEC), S. Kubicek (IMEC), M. Niwa (Matsushita assignee at IMEC), L. Pantisano, R. Puurunen, L.-A. Ragnarsson, T. Schram (IMEC), Y. Shimamoto (Hitachi assignee at IMEC), W. Tsai (ISMT assignee at IMEC), E. Rohr, S. Van Elshocht, T. Witters (IMEC), E. Young (ISMT assignee at IMEC), C. Zhao, and M. Heyns (IMEC)
4:30561 Crystallization of HfO_2 Synthesized by Atomic Layer Deposition: Electrical and Microstructural Behavior - H. Kim, P. McIntyre, and K. Saraswat (Stanford University)
4:50562 Structure and Stability of Alternative High-K Gate Dielectrics - S. Stemmer, Y. Yang (University of California Santa Barbara), B. Foran, P. Lysaght (Sematech), W. Zhu, and T.-P. Ma (Yale University)
5:10563 Suppression of Silicidation in Poly-Si /High-k Insulator /SiO_2 /Si Structure by Helium Through Process - K. Muraoka (Toshiba Corporation)
5:30564 Effect of Post Metallization Annealing for La2O3 Gate Thin Films on Electrical Characteristics - A. Kuriyama, S.-I. Ohmi, K. Tsutsui, and H. Iwai (Tokyo Institute of Technology)

Exhibit Hall, Ground Level

Technical Exhibit and Poster Session, 7:00 - 9:00 PM

Co-Chair: S. Kar

TimeAbs#Title
o565 Structural and Electrical Properties of Lanthanum Aluminate Thin Film Depostied by MOCVD - J.H. Jun and D.J. Choi (Yonsei University)
o566 Reaction Mechanism of a Titanium Source, Ti(MPD)(METHD)2, in Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO3 Films - T. Nishimura, T. Nakamura, and K. Tachibana (Kyoto University)
o567 Characteristics of (Pb, Sr)TiO3 Films Post Treated by Low Temperature Technologies - J.-L. Wang, C.-K. Jan, D.-C. Shye, and H.-C. Cheng (National Chiao-Tung University)
o568 The Improved Thermal Stability of HfO2 and (HfO2)x(Al2O3)1-x Films by Reactive Sputtering. - Y.-S. Kim, D. Lee, Y.-E. Hong, D.-H. Ko (Yonsei University), J.-H. Ku (Samsung Electronics Co., Ltd.), and C.-W. Yang (Sungkyunkwan University)
o569 Chlorine Detection and Quantification in ALCVD HfO2 High-k Dielectric Films Using Total Reflection X-Ray Fluorescence Spectrometry - D. Hellin, A. Delabie, R. Puurrunen, T. Conard, S. De Gendt (IMEC), and C. Vinckier (KuLeuven)
o570 Organic/Plastic High-Dielectric-Constant Materials - C. Huang (The Pennsylvania State University)
o571 Investigation of High-k Dielectric Properties with the Non-contact SASS Technique - M. Wilson, J. Lagowski, J. D'Amico, and A. Savtchouk (Semiconductor Diagnostics, Inc.)

Wednesday, October 15, 2003

Diamond Room, Ground Level

Defects Characterization and Reliability

Co-Chair: D. Misra

TimeAbs#Title
10:00572 Photoelectron Spectroscopy Investigation of High k Dielectrics - R. Opila (University of Delaware)
10:30573 Soft Breakdown Phenomena in High-k Gate Dielectrics - H. Satake (Toshiba Corporation)
11:00574 Low Frequency Noise Study of n-MOSFETs with HfO2 Gate Dielectric - C. Claeys, E. Simoen, A. Mercha, L. Pantisano (IMEC), and E. Young (International Sematech, Philips Semiconductor)
11:20575 Simulations of Bias Temperature Instabilities in pMOSFETs with HfxSiOy-Based Gate Dielectrics - C. Bizzari, M. Houssa, and J.-L. Autran (University of Provence)
11:40576 The Effects of Forming Gas Anneal Temperature and Dielectrics Leakage Current on TDDB Properties of HfO2 Devices - Y.-H. Kim (University of Texas at Austin)
12:00577 Charge Trapping and Mobility Degradation in MOCVD Hafnium Silicate Gate Dielectric Stack Structures - C. Young (International SEMATECH), A. Kerber (IMEC), T.H. Hou (TSMC), E. Cartier (IBM Research Division), G. Brown, G. Bersuker (International SEMATECH), Y. Kim (Intel), C. Lim (Infineon), J. Gutt, P. Lysaght, J. Bennett, C.-H. Lee, S. Gopalan, M. Gardner, P. Zeitzoff (International SEMATECH), G. Groeseneken (IMEC), R. Murto, and H. Huff (International SEMATECH)

Electrical Characterization II

Co-Chair: M. Houssa

TimeAbs#Title
2:00578 High Hole Mobility of Al2O3 MOSFETs on Dislocation Free Ge-on-Insulator Wafers - A. Chin, D.S. Yu, C.H. Huang (National Chiao Tung Univ.), C.H. Wu (Chung Hua Univ.), and W.J. Chen (National Huwei Inst. ofTechnology)
2:30579 Extraction of the High-K Gate Dielectric Parameters from the Capacitance Data - S. Kar (Indian Institute of Technology)
2:50580 Characteristics of Thermally Evaporated HfO_2 - R. Garg, D. Misra, and R. Jarwal (New Jersey Institute of Technology)
3:10 Twenty-Minute Intermission
3:30581 Characterization of High-k Dielectric Stacks - M. Mansouri, S. Gaddipati, and Y.L. Chiou (University of South Florida)
3:50582 Electrical Characteristics of High-k La_2O3 Thin Film Deposited by E-Beam Evaporation Method - Y. Kim, S.-I. Ohmi, K. Tsutsui, and H. Iwai (Tokyo Institute of Technology)
4:10583 Non-contact Corona-based Nitrogen Content Indicator for Si-O-N Dielectrics - J. D'Amico, J. Lagowski, M. Wilson, and A. Savtchouk (Semiconductor Diagnostics, Inc.)

Thursday, October 16, 2003

Ferroelectric Layers and Memory Devices

Co-Chairs: R. Opila and J. Morais

TimeAbs#Title
8:30584 Effect of Glass Addition on Microstructure and Microwave Properties of Ba(Mg_1/3Ta2/3)O3 - T.-W. Huang (National Cheng Kung University), Y.-H. Chang (Department of Material Science and Engineering, National Cheng Kung University), and G.-J. Chen (I-Shou University)
8:50585 Dielectric Properties of La-substituted Ba_1-xLax (Fe1/2Nb1/2)1-x/4O3$ Ceramics - C.Y. Chung, Y.H. Chang, and Y.S. Chang (National Cheng Kung University)
9:10586 Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Thin Films Deposited by RF Magnetron Sputtering - S. Stemmer and J. Lu (University of California Santa Barbara)
9:30 Thirty-Minute Intermission
10:00587 Floating Gate Flash Memory Devices Using HfAlOx As Inter-Poly Oxide - M. Mansouri and Y.L. Chiou (University of South Florida)
10:20588 Development of a Novel MIM Capacitor Using Al_2O3/Ta205 Stack Dielectric for 90nm Embedded Dram Applications - N. Jourdan (STMicroelectronics), E. Gerritsen (Philips Semiconductors), M. Piazza, D. Fraboulet, F. Monsieur (STMicroelectronics), and K.-Y. Oh (Jusung Engineering)
10:40589 Fabrication and Characterization of Integrated PLZT Capacitors Formed via Robocasting - D. Williams, B. Tuttle, J. Cesarano, and P. Clem (Sandia National Laboratories)