204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society

October 12-October 16, 2003

PROGRAM INFORMATION

H1 - Interfaces in Electronic Materials

Dielectric Science and Technology/Electronics/High Temperature Materials/Electronics Division of The American Ceramic Society

Monday, October 13, 2003

Captain Room, Lobby Level

Planar Interfaces I

Co-Chairs: K. Jain and T. Hara

TimeAbs#Title
10:00632 Interface Characterization in the Semiconductor Industry - A.C. Diebold, P. Hung, B. Foran (International SEMATECH), and T. Kelly (Imago)
10:30633 Tetragonal Plus Displacive Ferroelectric Distortion in Thin SrTiO3 Films Grown on Si(001) - J. Woicik (National Institute of Standards and Technology)
11:00634 Electrical, Structural, and Chemical Etch Studies of Strained Si/SiGe Epitaxial Heterostructures - K.R. Bray, W. Zhao, L. Kordas (North Carolina State University), M. Robinson (Lawrence Semiconductor Research Compnay), G. Rozgonyi (North Carolina State University), and R. Wise (Texas Instruments)
11:15635 Thermodynamic Analysis - A.V. Davydov, W.J. Boettinger, L.A. Bendersky, D. Josell, A.J. Shapiro, and M.D. Vaudin (NIST)
11:45636 Investigation of Interface Between Co-enhanced Low Temperature Epitaxial Si and the Si Substrates - Y. Uchida, M. Inagaki, S. Akisawa, and K. Ishida (Teikyo University of Science and Technology)

Planar Interfaces II

Co-Chairs: P.Y. Hung and N. Browning

TimeAbs#Title
2:00637 Molecular Dynamics Simulations of the Interface Between Amorphous and Crystalline Solids - S. Garofalini (Rutgers University)
2:30638 Structure-Property Relationships of Interfaces in Epitaxial SnO2 Thin Films - X. Pan, J. Dominguez, W. Kim, and H. Sun (University of Michigan)
3:00639 Metal-Oxide Interfaces in 2nd Generation HTS Wires: Mechanism of Epitaxial Growth of Oxide Films Mediated by a Sulfur Superstructure - C. Cantoni, D.K. Christen, A. Goyal, L. Heatherly, F.A. List, E.D. Specht, M. Varela, and S.J. Pennycook (Oak Ridge National Laboratory)
3:30640 Effect of the Surface and Interface on the Superconducting Properties of REBa2Cu3O7 Films - Q. Jia, S. Foltyn, J. MacManus-Driscoll, H. Wang, and P. Arendt (Los Alamos National Lab)

Tuesday, October 14, 2003

Processing

Co-Chairs: S. Garofalini and H. Gu

TimeAbs#Title
8:30641 Application of an In-line, Non-destructive, Electrical Metrology in the Evaluation of Pre-gate Clean - P.Y. Hung (International SEMATECH), L. Tan (Solid State Measurement, Inc), J. Barnett (International SEMATECH), R.J. Hillard (Solid State Measurement, Inc), and A. Diebold (International SEMATECH)
8:45642 Interface Modification for Organic Thin Film Transistors Using a Statistical Optimization Method - W.-S. Hong (Sejong University), B. Koo, and I. Kang (Samsung Advanced Institute of Technology)
9:00643 Interface Passivation By Hydrogen and Deuterium Implantation - T. Kundu and D. Misra (New Jersey Institute Of Technology)
9:30 Thirty-Minute Intermission
10:00644 Electrochemical Fabrication of Large-area Au/TiO_2 Junctions for Photovoltaic Application - J. Tang, G. Stucky, and E. McFarland (University of California)
10:15645 Microstructure of Interfaces Made by Epitaxial Electrodeposition - F. Oba (Case Western Reserve University), R. Liu, E.W. Bohannan (University of Missouri-Rolla), F. Ernst (Case Western Reserve University), and J.A. Switzer (University of Missouri-Rolla)
10:45646 TEM Studies of Interfacial Microstructures in YBa_2Cu3Oy Coated Conductors - T. Holesinger, B. Gibbons, S. Foltyn, P. Arendt, V. Matias, Q. Jia (Los Alamos National Laboratory), R. Feenstra, A. Gapud, E. Specht (Oak Ridge National Laboratory), D. Verebelyi, W. Zhang, X. Li, and M. Rupich (American Superconductor Corporation)
11:15647 Thermochemically Driven Reactions at Metal/Ceramic and Ceramic/Ceramic Interfaces in Multilayered Electronics Materials - L.P. Cook, W. Wong-Ng, I. Levin, P.K. Schenck, M.D. Vaudin, and J. Suh (NIST)

Advances in Characterization

Co-Chairs: J. Tang and R. DeSouza

TimeAbs#Title
2:00648 Mapping The Electronic Structure at Interfaces with Atomic Spatial Resolution - N. Browning, I. Arslan (University of California at Davis), J. Buban (University of Illinois at Chicago), R. Erni, J.-C. Idrobo, H. Iddir, Y. Jing (University of California at Davis), Y. Lei, and S. Ogut (University of Illinois at Chicago)
2:30649 XANES/ELNES: A Powerful Tool For Interface Characterization of Electronic Materials - W.-Y. Ching (University of Missouri-Kansas City)
3:00650 Local Magnetism at Interfaces in La-Ca-Mn-O CMR Thin Films - D. Miller, V. Vlasko-Vlasov, and U. Welp (Argonne National Laboratory)
3:30651 Energetic of Interfaces in Refractory Oxides: Development of Calorimetric Techniques - S. Ushakov, A. Navrotsky (University of California at Davis), and A. Demkov (Motorola, Inc.)
4:00652 Characterization of Embedded Interfaces in Electronic Materials with Local Electrode Atom Probes - T. Kelly (Imago Scientific Instruments Corporation)
4:30653 Characterization of the Silicon Dioxide-Silicon Interface with the Scanning Capacitance Microscope - J. Kopanski, R. Thurber (National Institute of Standards and Technology), and M. Chun (Brown University)
5:00654 Dopant Profiling of Metal-Oxide Semiconductor (MOS) Structures with Scanning Electron Microscopy - W.-C. Hsiao, C.-P. Liu (National Cheng Kung University), L.-C. Sun, and T. Hung (Taiwan Semiconductor Manufacturing Company)

Wednesday, October 15, 2003

Grain Boundaries, Twins and Domains

Co-Chairs: W.Y. Ching and J. Woicik

TimeAbs#Title
10:00655 Mechanisms for Impurity Adsorption and Wetting at Grain Boundaries: Implications for Electronic Ceramics - R.M. Cannon (Lawrence Berkeley National Laboratory)
10:30656 Solving the Grain Boundary Problem of the High-Tc-Cuprates - G. Hammerl, A. Weber, A. Schmehl, C.W. Schneider, and J. Mannhart (University of Augsburg)
11:00657 Transport Across External and Internal Interfaces in Fe-doped SrTiO_3 - R. De Souza (RWTH Aachen) and J. Maier (Max-Planck Institute for Solid State Research)
11:30658 Interfacial Defect Chemistry in Metal Oxides: Complementary Analytical Electron Microscopy and Impedance Spectroscopy Studies - E. Dickey, Q. Wang, G. Yang, and C. Randall (Pennsylvania State University)

Grain Boundaries, Twins and Domains II

Co-Chairs: T. Kundu and T. Holesinger

TimeAbs#Title
2:00659 Local Structure and Composition of Amorphous Grain Boundary Films in Electronic Ceramics - H. Gu (Chinese Academy of Sciences)
2:30660 Switching Behavior and Phase Transitions in KNbO3/KTaO3 Superlattices by Atomic-Level Simulation - M. Sepliarsky, S. Phillpot, D. Wolf (Argonne National Laboratory), M. Stachiotti, and R. Migoni (Instituto de Fisica Rosario)
3:00661 Twin Boundaries, Their Microstructure and Correlation to Critical Current Densities in Superconducting YBa2Cu3O7-x (YBCO) - S.-W. Chan (Columbia University)
3:30662 18O Tracer Diffusion in Donor-Doped SrTiO3 Key to an Advanced Understanding of the Formation of a Grain Boundary Potential Barrier - R. Meyer (RWTH Aachen), J. Helmbold, G. Borchardt (TU Clausthal), and R. Waser (RWTH Aachen)
4:00663 Role of Bonding and Coordination in the Atomic and Electronic Structure of Diamond and Silicon Grain Boundaries and in Carbon Nanotube Junctions - P. Keblinski (Rensselaer Polytechnic Institute)
4:30664 TEM Studies of Interfaces in III-V Compounds - C.B. Carter (University of Minnesota)
5:00665 Effects of Insoluble Particles on the Crystalline Structure of Polycrystalline Sheet Silicon - R. Zhang, G. Rozgonyi (North Carolina State University), J. Rand, and R. Jonczyk (AstroPower, Inc.)
5:15666 Porosity of Titania Films on Alumina - K. Jain (Delphi Research Labs)

Thursday, October 16, 2003

Interfaces in Service

Co-Chairs: S. Ushakov and D. Miller

TimeAbs#Title
8:30667 Adhesion and Reliability of Thin-Film Structures for Device Technologies: New Material and Length Scale Challenges - R. Dauskardt (Stanford University)
9:00668 Fundamental Understanding of Failure Mechanism of Ni-BaTiO3 BME MLCCs Using Impedance Spectroscopy and Electron Microscopy - E. Furman, G.-Y. Yang, B. Dickey, and C. Randall (The Pennsylvania State University)
9:30 Thirty-Minute Intermission
10:00669 Glass/Metal Interfaces under High Field Exposure - L. Klein (Rutgers, the State University of New Jersey), M. Alvarez (Denglas), and E.K. Akdogan (Rutgers, the State University of New Jersey)
10:30670 Adhesion of Titania Films on Alumina - K. Jain (Delphi Research Labs)
10:45671 Dielectric Degradation of Ba_0.5Sr0.5TiO3 Thin Film Capacitor under Dry or Wet Condition - T. Hara, H. Nishikawa, S. Konushi, F. Fukumaru, and S. Nambu (Kyocera Corporation)
11:00672 Si-SiO_2 Interface Behavior in n-MOSFETs with Reverse Bias Voltage During High-field and Hot Electron Injection - P. Srinivasan, M. Durgamadha, and B. Vootukuru (New Jersey Institute of Technology)
11:15673 Thermal Stability of Low Resistance Ohmic Contacts Between Ti and Se Passivated n-type Si-(001) - D. Udeshi, S. Agarwal, M. Tao, N. Basit, E. Maldonado, W. Kirk (University of Texas at Arlington), and Y. Xu (Texas Instruments)