204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society
October 12-October 16, 2003
PROGRAM INFORMATION
S1 - Luminescence Mechanisms, Devices, and Displays
Luminescence and Display Materials
Tuesday, October 14, 2003
Gallery Room, Lobby Level
LEDs and Displays
Co-Chairs: L. Shea-Rohwer and C. Ronda
Time | Abs# | Title |
10:00 | 1164 |
Materials Challenges for Flat Panel Displays - R. Petersen (SAES Getters USA, Inc) |
10:30 | 1165 |
Coating Effect on CL Quenching Behavior of ZnS:Ag,Cl Phosphors - J. Bang, B. Abrams, and P. Holloway (University of Florida) |
10:50 | 1166 |
Optical Properties of Eu+2 Activated Orthosilicate Phosphors and Their Stability Under Laser Irradiation - J. Rowland (University of Florida), G. Hong, W. Yoo, J. Yoo (Chung-Ang University), and P. Holloway (University of Florida) |
11:10 | 1167 |
Photoluminescence Thermal Quenching of Encapsulated CdS and CdSe Quantum Dots for Solid State Lighting Applications - B. Abrams, L. Shea-Rohwer, J. Wilcoxon, S. Woessner, and S. Thoma (Sandia National Laboratories) |
11:30 | 1168 |
Improve Hole and Electron Injection for Light Emitting Diodes Through Modifications of Electrodes with Polymer Electrolytes - T.C. Wen, L.M. Huang, and S.F. Chung (National Cheng Kung University) |
Photoluminescence, Cathodoluminescence, and LEDs
Co-Chairs: L. Shea-Rohwer and C. Ronda
Time | Abs# | Title |
2:00 | 1169 |
Control of Spectral Properties in Silicate-based Phosphors for LED applications - G. Hong, W. Yoo, J. Yoo (Chung-Ang University), H. Lee, J. Rowland, and P. Holloway (University of Florida) |
2:20 | 1170 |
Low Voltage Cathodoluminescence from Zn_2SiO4: Mn and Zn2GeO4: Mn Thin Films - L. Williams, D. Norton, and P. Holloway (University of Florida) |
2:40 | |
Twenty-Minute Intermission |
3:00 | 1171 |
Visible Photoluminescence from Anodized p-type InP(100) - D. Lockwood (National Research Council), U. Schlierf, and P. Schmuki (University of Erlangen-Nuremberg) |
3:20 | 1172 |
A Study on the Luminescent Properties of Erbium-activated Zn_2SnO4 Phosphors - Y.-C. Chen, Y.-H. Chang, and P.-H. Tsai (National Cheng Kung University) |
Exhibit Hall, Ground Level
Technical Exhibit and Poster Session
Co-Chair: L. Shea-Rohwer
Time | Abs# | Title |
o | 1173 |
Growth and Characterization of MgGa_2O4:Eu Phosphor Powders Synthesized by Sol-gel method - P.-H. Tsai, Y.-H. Chang, and Y.-C. Chen (National Cheng Kung University) |
o | 1174 |
Triode-type Field Emitter Arrays Using Selectively Grown Carbon Nanotubes - H.S. Uh, S.M. Lee, P.G. Jeon, B.H. Kwak, S.S. Park (Sejong University), S.J. Kwon (Kyungwon University), S.W. Ko, E.S. Cho, and J.D. Lee (Seoul National University) |
o | 1175 |
Effects of Chemical Treatment of Gate Dielectric on The Electrical Characteristics of Low-Pressure Gas Assisted Organic Vapor Deposited Pentacene Thin-Film Transistors - S.D. Ahn, S.Y. Kang, Y.E. Lee, M.J. Joung, C.A. Kim, and K.S. Suh (Electronics and Telecommunications Research Institute) |
o | 1176 |
Enhanced Luminescence Properties of Pulsed Laser Deposited Europium Activated Yttrium Oxide Thin Films on Porous Silicon Surfaces - J. Choi and R. Singh (University of Florida) |
o | 1177 |
Effects of Divalent or Trivalent Cation Incorporation on the Emission Characteristics of SrIn2O4:Pr3+ Phosphors - S.-Y. Kang, S.-G. Kang, Y.-E. Lee, S.-D. Ahn, and K.-S. Suh (Electronics and Telecommunications Research Institute) |
Wednesday, October 15, 2003
Gallery Room, Lobby Level
Luminescence Efficiency, FETs, and TFTs
Co-Chairs: B. Abrams and A. Srivastava
Flat Panel Displays, Field Emission, and Thin Films
Co-Chairs: B. Abrams and A. Srivastava
Time | Abs# | Title |
2:00 | 1184 |
Electrochemiluminescence Generated in PPV-Type Polymer Coatings - U. Janakiraman (Fritz-Haber-Institut der Max-Planck-Gesellschaft), D. Dini (University of Rome "La Sapienza"), and K. Doblhofer (Fritz-Haber-Institut der Max-Planck-Gesellschaft) |
2:20 | 1185 |
Low Temperature Deposition of AlOxNy Dielectric Film on Poly-Ether Sulphone Substrate Using Plasma-Enhanced Atomic Layer Deposition - S.J. Yun, J.W. Lim, and J.-H. Lee (Electronics and Telecommunications Research Institute) |
2:40 | |
Twenty-Minute Intermission |
3:00 | 1186 |
Application of Ballistic Electron Effect in Nanocrystalline Silicon Diodes to Flat Panel Displays - N. Koshida (Tokyo Univ. of A and T), A. Kojima (Quantum14), Y. Nakajima (Tokyo Univ. of A and T), T. Ichihara, Y. Watabe, and T. Komoda (Matsushita Electric Works) |
3:20 | 1187 |
Effects of Oxidation Processes on the Field Emission Characteristics of Porous Polycrystalline Silicon Field Emitter - S.C. Bae, B.G. Jea, and S.Y. Choi (Kyungpook National University) |
3:40 | 1188 |
Excimer Formation in Oligo[2,5-bis(hexadecyloxy)-1,4-phenylene]s Followed by Fluorescence Spectroscopy - D. Vyprachticky and V. Cimrova (Academy of Sciences of the Czech Republic) |
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