204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society

October 12-October 16, 2003

PROGRAM INFORMATION

S1 - Luminescence Mechanisms, Devices, and Displays

Luminescence and Display Materials

Tuesday, October 14, 2003

Gallery Room, Lobby Level

LEDs and Displays

Co-Chairs: L. Shea-Rohwer and C. Ronda

TimeAbs#Title
10:001164 Materials Challenges for Flat Panel Displays - R. Petersen (SAES Getters USA, Inc)
10:301165 Coating Effect on CL Quenching Behavior of ZnS:Ag,Cl Phosphors - J. Bang, B. Abrams, and P. Holloway (University of Florida)
10:501166 Optical Properties of Eu+2 Activated Orthosilicate Phosphors and Their Stability Under Laser Irradiation - J. Rowland (University of Florida), G. Hong, W. Yoo, J. Yoo (Chung-Ang University), and P. Holloway (University of Florida)
11:101167 Photoluminescence Thermal Quenching of Encapsulated CdS and CdSe Quantum Dots for Solid State Lighting Applications - B. Abrams, L. Shea-Rohwer, J. Wilcoxon, S. Woessner, and S. Thoma (Sandia National Laboratories)
11:301168 Improve Hole and Electron Injection for Light Emitting Diodes Through Modifications of Electrodes with Polymer Electrolytes - T.C. Wen, L.M. Huang, and S.F. Chung (National Cheng Kung University)

Photoluminescence, Cathodoluminescence, and LEDs

Co-Chairs: L. Shea-Rohwer and C. Ronda

TimeAbs#Title
2:001169 Control of Spectral Properties in Silicate-based Phosphors for LED applications - G. Hong, W. Yoo, J. Yoo (Chung-Ang University), H. Lee, J. Rowland, and P. Holloway (University of Florida)
2:201170 Low Voltage Cathodoluminescence from Zn_2SiO4: Mn and Zn2GeO4: Mn Thin Films - L. Williams, D. Norton, and P. Holloway (University of Florida)
2:40 Twenty-Minute Intermission
3:001171 Visible Photoluminescence from Anodized p-type InP(100) - D. Lockwood (National Research Council), U. Schlierf, and P. Schmuki (University of Erlangen-Nuremberg)
3:201172 A Study on the Luminescent Properties of Erbium-activated Zn_2SnO4 Phosphors - Y.-C. Chen, Y.-H. Chang, and P.-H. Tsai (National Cheng Kung University)

Exhibit Hall, Ground Level

Technical Exhibit and Poster Session

Co-Chair: L. Shea-Rohwer

TimeAbs#Title
o1173 Growth and Characterization of MgGa_2O4:Eu Phosphor Powders Synthesized by Sol-gel method - P.-H. Tsai, Y.-H. Chang, and Y.-C. Chen (National Cheng Kung University)
o1174 Triode-type Field Emitter Arrays Using Selectively Grown Carbon Nanotubes - H.S. Uh, S.M. Lee, P.G. Jeon, B.H. Kwak, S.S. Park (Sejong University), S.J. Kwon (Kyungwon University), S.W. Ko, E.S. Cho, and J.D. Lee (Seoul National University)
o1175 Effects of Chemical Treatment of Gate Dielectric on The Electrical Characteristics of Low-Pressure Gas Assisted Organic Vapor Deposited Pentacene Thin-Film Transistors - S.D. Ahn, S.Y. Kang, Y.E. Lee, M.J. Joung, C.A. Kim, and K.S. Suh (Electronics and Telecommunications Research Institute)
o1176 Enhanced Luminescence Properties of Pulsed Laser Deposited Europium Activated Yttrium Oxide Thin Films on Porous Silicon Surfaces - J. Choi and R. Singh (University of Florida)
o1177 Effects of Divalent or Trivalent Cation Incorporation on the Emission Characteristics of SrIn2O4:Pr3+ Phosphors - S.-Y. Kang, S.-G. Kang, Y.-E. Lee, S.-D. Ahn, and K.-S. Suh (Electronics and Telecommunications Research Institute)

Wednesday, October 15, 2003

Gallery Room, Lobby Level

Luminescence Efficiency, FETs, and TFTs

Co-Chairs: B. Abrams and A. Srivastava

TimeAbs#Title
8:401178 Efficient Luminescence in Compounds Showing a Very Large Stokes Shift - C. Ronda (Philips Research Laboratories Aachen)
9:001179 Transparent ZnO-Based FET Structures for Displays - Y. Li and D. Norton (University of Florida)
9:201180 Enhancing Efficiency and Stability of Nanocrystalline Porous Silicon Electroluminescence by Surface Treatments - B. Gelloz and N. Koshida (University of A and T)
9:401181 The Influence of Processing Parameters on Photo-luminescent Properties of BaS:Ce Phosphors by Double-Crucible Method - Y.-H. Chang and Y.-F. Lin (National Cheng Kung University)
10:00 Twenty-Minute Intermission
10:201182 Novel Doping Techniques for poly-Si TFT's in Active-Matrix Flexible OLED's - W.-S. Hong and J. Kim (Sejong University)
10:401183 Photoluminescence, Electroluminescence and Charge Photogeneration in - and -conjugated Polymers and Their Blends - V. Cimrova, D. Vyprachticky, H. Hlidkova (Academy of Sciences of the Czech Republic), and H.-H. Horhold (Universitat Jena)

Flat Panel Displays, Field Emission, and Thin Films

Co-Chairs: B. Abrams and A. Srivastava

TimeAbs#Title
2:001184 Electrochemiluminescence Generated in PPV-Type Polymer Coatings - U. Janakiraman (Fritz-Haber-Institut der Max-Planck-Gesellschaft), D. Dini (University of Rome "La Sapienza"), and K. Doblhofer (Fritz-Haber-Institut der Max-Planck-Gesellschaft)
2:201185 Low Temperature Deposition of AlOxNy Dielectric Film on Poly-Ether Sulphone Substrate Using Plasma-Enhanced Atomic Layer Deposition - S.J. Yun, J.W. Lim, and J.-H. Lee (Electronics and Telecommunications Research Institute)
2:40 Twenty-Minute Intermission
3:001186 Application of Ballistic Electron Effect in Nanocrystalline Silicon Diodes to Flat Panel Displays - N. Koshida (Tokyo Univ. of A and T), A. Kojima (Quantum14), Y. Nakajima (Tokyo Univ. of A and T), T. Ichihara, Y. Watabe, and T. Komoda (Matsushita Electric Works)
3:201187 Effects of Oxidation Processes on the Field Emission Characteristics of Porous Polycrystalline Silicon Field Emitter - S.C. Bae, B.G. Jea, and S.Y. Choi (Kyungpook National University)
3:401188 Excimer Formation in Oligo[2,5-bis(hexadecyloxy)-1,4-phenylene]s Followed by Fluorescence Spectroscopy - D. Vyprachticky and V. Cimrova (Academy of Sciences of the Czech Republic)