205th Meeting of The Electrochemical Society

May 9-May 14, 2004


D1 - Plasma Processing XV

Dielectric Science and Technology/Electrodeposition/Electronics

Tuesday, May 11, 2004

Conference Room 8, Level 3

Plasma Deposition and Etching

Co-Chairs: G.S. Mathad and Y. Kuo

09:00133 High-Density PECVD processing of Gate Insulator for High Performance TFTs - P. Joshi, A. Voutsas, and J. Hartzell (SHARP Laboratories of America, Inc.)
09:20134 A Thermally Stable, k<2.5 Carbon-Doped Oxide Film Deposited by a Plasma-Enhanced CVD Process - A. Demos, L. D'Cruz, F. Schmitt, Y. Zheng, H. Armer, and H. M'Saad (Applied Materials)
09:40 Twenty-Minute Intermission
10:00135 Plasma Enhanced Deposition of Carbon for Hardmask Applications - M. Vogt, M. Kirchhoff, M. Stavrev, and S. Wege (Infineon Technologies Dresden GmbH and Co. OHG)
10:20136 Design and Modeling of a New Inductively-Coupled Plasma Source for Semiconductor Wafer Processing - D.-H. Lee, Y.K. Oh, and N.H. Kim (Adaptive Plasma Technology Corporation)
10:40137 Screening Experiments for Dielectric Etches of Damascene Trench Structures with Deep Sub-100nm Critical Dimensions - M. Engelhardt and G. Steinlesberger (Infineon Technologies, Corporate Research)
11:00138 Line Edge Roughness Investigations for Dielectric Etches with 193nm Lithography - S. Machill, L. Volkel, T. Marschner, and S. Wege (Infineon Technologies SC300 GmbH and Co. KG)
11:20139 A Photoresist Etch Back Process for Deep Trench Capacitor Applications - H. Goto, T. Uk (Novellus Systems, Inc.), and S. Kundalgurki (Infineon Technologies Dresden Gmbh and Co. OHG)
11:40140 Interaction of a Variety of Ashing Plasma with MSQ Low-k Dielectric - Q.T. Le (IMEC), M. Patz (JSR Corporation), H. Struyf, M. Baklanov, W. Boullart, S. Vanhaelemeersch (IMEC), and K. Maex (Katholieke Universitiet Leuven)

Plasma Etching Processes

Co-Chairs: D.W. Hess and M. Engelhardt

14:00141 Evaluation and Improvement of Diffusion Barrier/Copper Interface for Damascene Nono-Interconnects - M.-H. Lee, S.G. Pyo, S.-J. Park, C.-J. Ko, S.-B. Kim, and J.-G. Lee (Hynix Semiconductor Inc.)
14:20142 Improvement of Electrical and Interface Property in MOS Device with Gate Hafnium Oxynitride by Plasma Dry Cleaning - C.-L. Cheng and K.-S. Chang-Liao (National Tsing Hua University)
14:40143 Dry Etching of MRAM Structures - S. Pearton (University of Florida) and J. Childress (Hitachi Almaden Research Center)
15:20 Twenty-Minute Intermission
15:40144 Reactive Ion Etching of TaN for a Metal Gate Electrode and ZrO_2 and Gd2O3 for High-k Gate Insulators - J. Tonotani, S. Takagi (Toshiba Corporation), S.-I. Ohmi, and H. Iwai (Tokyo Institute of Technology)
16:00145 Reactive Ion Etching of TiW Thin Film - Y. Kuo and G. Liu (Texas A and M University)
16:20146 Diagnostics of Plasmas, Using Optical Emission from Traces of Rare Glasses - V.M. Donnelly (University of Houston)