205th Meeting of The Electrochemical Society
May 9-May 14, 2004
PROGRAM INFORMATION
H1 - Narrow Bandgap Optoelectronic Materials and Devices Symposium II
Electronics/Sensor
Wednesday, May 12, 2004
Conference Room 12, Level 3
Antimonide Based Materials and Devices
Co-Chairs: M. Flatte and P. McCann
Time | Abs# | Title |
10:00 | 280 |
Recent Progress in the Development of Sb-based Mid-IR Interband Cascade Lasers - R.Q. Yang, C. Hill, and C. Wong (California Institute of Technology) |
10:30 | 281 |
Low-Power, High-Speed Sb-based HEMTs and HBTs - R. Magno, J. Boos, P. Campbell, B. Bennett, E. Glaser, B. Tinkham, M. Ancona, K. Hobart, N. Papanicolaou, K. Ikossi, W. Kruppa, D. Park, B. Shanabrook, J. Mittereder, W. Chang, R. Bass (Naval Research Laboratory), S. Mohney, S. Wang, J. Robinson (Pennsylvania State University), R. Tsai, M. Barsky, and A. Gutierrez (Northrop Grumman Space Technology) |
11:00 | 282 |
Design of High-Power Room-Temperature CW GaSb-based Type-I Quantum-Well Lasers with Wavelength > 2.5um. - L. Shterengas, G. Belenky (State University of New York at Stony Brook), G. Kim, and R. Martinelli (Sarnoff Corporation) |
11:30 | 283 |
Applications of Long-Wavelength Sources and Detectors for Medical Monitoring - J.T. Olesberg (University of Iowa) |
12:00 | 284 |
Design Criteria for InAs/GaInSb Superlattices for Very Long Wavelength Infrared Detectors - M.E. Flatte, D. Matthews (University of Iowa), and C.H. Grein (University of Illinois at Chicago) |
Non-Antimonide Materials and Devices
Co-Chairs: J. Olesberg and L. Shterengas
Time | Abs# | Title |
14:00 | 285 |
IV-VI Semiconductor Materials, Devices, and Applications - P. McCann (University of Oklahoma) |
14:30 | 286 |
Quantum Confinement Effects of PbSe Thin Films Formed Using EC-ALE - S. Cox, U. Happek, M. Mathe, and J. Stickney (The University of Georgia) |
14:50 | 287 |
Nanostructures on Epitaxial Si-Ge Thin Films on Silicon - L.J. Chen (National Tsing Hua University) |
15:20 | 288 |
Spin Relaxation in Narrow-Gap Semiconductors - B.N. Murdin, K. Litvinenko, M. Merrick (University of Surrey), P. Murzyn, P.J. Phillips, C.R. Pidgeon (Heriot-Watt University), L.F. Cohen, T. Zhang, S.K. Clowes (Imperial College of London), P. Buckle, and T. Ashley (QinetiQ) |
15:50 | 289 |
Heteroepitaxial Growth of Wurtzite InN Films on Si(111) Exhibiting Strong Near-Infrared Photoluminescence at Room Temperature - S. Gwo, C.L. Wu, C.H. Shen (National Tsing-Hua University), W.H. Chang, and T.M. Hsu (National Central University) |
16:10 | 290 |
PEC Behaviour of CdSe Films Pulse Plated From Nonaqueous Bath - N. Subramaniyam (Bharathiyar University), M. Murali (Central Electrochemical Research Institute), and V. Veeraragavan (Bharathiyar University) |
16:30 | 291 |
Studied the Variation of Nd and Vfb for Different Compositions of CdSexTe1-x Thin Films by Pulse Plating Technique. - S. Viswanathan (Multimedia University) and M. Kr (Central Electrochemical Research Institute) |
16:50 | 292 |
Characteristic Of Cdse Films Pulse Plated In The Presence Of Polycyclic Acids. - S.N. Manohar (Bharathidasan University), M. Murali (Central Electrochemical Research Institute), and R.C. Ravidhas (Bharathidasan University) |
17:10 | 293 |
Photoelectrochemical Characteristics of CdSe Films Brush Plated on High Temperature Substrates - M. Murali (Central Electrochemical Research Institute), A. Austine, and J. Jayasutha (J.J. College of Engineering) |
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