205th Meeting of The Electrochemical Society

May 9-May 14, 2004


H1 - Narrow Bandgap Optoelectronic Materials and Devices Symposium II


Wednesday, May 12, 2004

Conference Room 12, Level 3

Antimonide Based Materials and Devices

Co-Chairs: M. Flatte and P. McCann

10:00280 Recent Progress in the Development of Sb-based Mid-IR Interband Cascade Lasers - R.Q. Yang, C. Hill, and C. Wong (California Institute of Technology)
10:30281 Low-Power, High-Speed Sb-based HEMTs and HBTs - R. Magno, J. Boos, P. Campbell, B. Bennett, E. Glaser, B. Tinkham, M. Ancona, K. Hobart, N. Papanicolaou, K. Ikossi, W. Kruppa, D. Park, B. Shanabrook, J. Mittereder, W. Chang, R. Bass (Naval Research Laboratory), S. Mohney, S. Wang, J. Robinson (Pennsylvania State University), R. Tsai, M. Barsky, and A. Gutierrez (Northrop Grumman Space Technology)
11:00282 Design of High-Power Room-Temperature CW GaSb-based Type-I Quantum-Well Lasers with Wavelength > 2.5um. - L. Shterengas, G. Belenky (State University of New York at Stony Brook), G. Kim, and R. Martinelli (Sarnoff Corporation)
11:30283 Applications of Long-Wavelength Sources and Detectors for Medical Monitoring - J.T. Olesberg (University of Iowa)
12:00284 Design Criteria for InAs/GaInSb Superlattices for Very Long Wavelength Infrared Detectors - M.E. Flatte, D. Matthews (University of Iowa), and C.H. Grein (University of Illinois at Chicago)

Non-Antimonide Materials and Devices

Co-Chairs: J. Olesberg and L. Shterengas

14:00285 IV-VI Semiconductor Materials, Devices, and Applications - P. McCann (University of Oklahoma)
14:30286 Quantum Confinement Effects of PbSe Thin Films Formed Using EC-ALE - S. Cox, U. Happek, M. Mathe, and J. Stickney (The University of Georgia)
14:50287 Nanostructures on Epitaxial Si-Ge Thin Films on Silicon - L.J. Chen (National Tsing Hua University)
15:20288 Spin Relaxation in Narrow-Gap Semiconductors - B.N. Murdin, K. Litvinenko, M. Merrick (University of Surrey), P. Murzyn, P.J. Phillips, C.R. Pidgeon (Heriot-Watt University), L.F. Cohen, T. Zhang, S.K. Clowes (Imperial College of London), P. Buckle, and T. Ashley (QinetiQ)
15:50289 Heteroepitaxial Growth of Wurtzite InN Films on Si(111) Exhibiting Strong Near-Infrared Photoluminescence at Room Temperature - S. Gwo, C.L. Wu, C.H. Shen (National Tsing-Hua University), W.H. Chang, and T.M. Hsu (National Central University)
16:10290 PEC Behaviour of CdSe Films Pulse Plated From Nonaqueous Bath - N. Subramaniyam (Bharathiyar University), M. Murali (Central Electrochemical Research Institute), and V. Veeraragavan (Bharathiyar University)
16:30291 Studied the Variation of Nd and Vfb for Different Compositions of CdSexTe1-x Thin Films by Pulse Plating Technique. - S. Viswanathan (Multimedia University) and M. Kr (Central Electrochemical Research Institute)
16:50292 Characteristic Of Cdse Films Pulse Plated In The Presence Of Polycyclic Acids. - S.N. Manohar (Bharathidasan University), M. Murali (Central Electrochemical Research Institute), and R.C. Ravidhas (Bharathidasan University)
17:10293 Photoelectrochemical Characteristics of CdSe Films Brush Plated on High Temperature Substrates - M. Murali (Central Electrochemical Research Institute), A. Austine, and J. Jayasutha (J.J. College of Engineering)