All proceedings for this year are Out of Print.
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Patterning Science and Technology, R. Gleason, G. J. Hefferon, and L. K. White, editors, PV 90-1, 240 pages. The papers at this symposium dealt primarily with optical resists and lithography and pattern transfer technology. Invited tutorial papers were presented addressing optical resist materials, resist system modeling, DUV excimer laser steppers, and dry etch damage and contamination. Out of Print.
Electrochromic Materials, M. K. Carpenter and D. A. Corrigan, editors, PV 90-2, 380 pages. Topics in the symposium included synthesis, physical properties, electrochemistry and optical properties of electrochromic materials, ionic conductors, and transparent conductors. The volume is divided into two parts: one on electrochromic materials and their properties, the other on electrochromic devices. Out of Print.
Automated Integrated Circuits Manufacturing (5th International Symposium), V. Akins, editor, PV 90-3, 288 pages. The purpose of this symposium was to bring together persons who are interested in issues associated with automation of semiconductor/IC manufacturing. This proceedings is divided into six parts: systems, simulation and scheduling, process control, contamination control and safety, factory automation, and equipment communication and interfaces. Out of Print.
Rechargeable Lithium Batteries, S. Subbarao, V. R. Koch, B. B. Owens, and W. H. Smyrl, editors, PV 90-5, 328 pages. These papers covered a wide variety of topics related to the chemistry and technology of the various rechargeable lithium battery systems presently under development. Based on the electrolyte employed, these battery systems were divided into four groups: organic electrolyte systems, polymeric electrolyte systems, inorganic electrolyte systems and molten salt electrolyte systems. Some of the important research and technology issues addressed in this symposium include cathode materials, electrolyt es, anode materials, cell chemistry, seals, safety and applications. Out of Print.
Silicon-on-Insulator Technology and Devices (4th International Symposium), D. N. Schmidt, editor, PV 90-6, 563 pages. Following two papers giving an overview, sessions were held on: manufacturing of SOI materials, SIMOX material formation and structural evaluation, nondestructive SOI layer measurement, bonded wafer material formation and structural evaluation, SOI material evaluation techniques, novel SOI technologies, and SOI device performance-discrete and IC. Out of Print.
Semiconductor Silicon 1990 (6th International Symposium), H. Huff, K. G. Barraclough and J-i. Chikawa, editors, PV 90-7, 1090 pages. Part one of the symposium contained a ULSI overview. The second part covered silicon processes. Topics dealt with are silicon crystal growth; thin films, interfaces, and epitaxy; oxidation and nitridation; diffusion and ion-implantation; gettering phenomena; silicon device microstructures; and diagnostic failure analysis. Out of Print.
Magnetic Materials, Processes, and Devices, L. T. Romankiw and D. A. Herman, Jr., editors, PV 90-8, 766 pages. The purpose of this symposium was to provide a forum for those working in the thin film processing and electrochemical technology of magnetic materials to exchange information. Sessions were held on: magnetic recording, physics and measurements for magnetic record, thin film heads and fabrication techniques, laminated soft-magnetic materials, electrochemistry of soft-magnetic materials, media for horizontal magnetic recording, media for perpendicular magnetic recording, sputtered media, overcoats, and tribology, and undercoats and magnetic aluminate media. Out of Print.
Cleaning Technology in Semiconductor Device Manufacturing (1st International Symposium), J. Ruzyllo and R. E. Novak, editors, PV 90-9, 399 pages. Water cleaning is the most frequently applied processing step in IC fabrication technique. The overview paper was on the evolution of silicon wafer cleaning technology. Sessions were held on: wet cleaning technology, dry cleaning technology, particles and airborne contaminants, characterization of cleaning, cleaning before thermal oxidation, and cleaning of III-IV semiconductors. Out of Print.
Analytical Techniques for Semiconductor Materials and Process Characterization, B. O. Kolbesen, D. V. McCaughan, and W. Vandervorst, editors, PV 90-11, 364 pages. The analytical techniques and tools described are organized according to applications in three parts: bulk impurities and defects, surfaces, interfaces and thin films, and chemical trace analysis. Most of the papers deal with analytical methods and tools which are already routinely used in research and development and some also in production and quality assurance: e.g., methods for monitoring and identification of metals impurities on surfaces and in the bulk of semiconductor materials as well as in liquids and chemicals used in the fabrication of semiconductor materials and devices; methods for the characterization of thin films such as Auger electron spectroscopy and x-ray structural techniques; methods for defect character ization and monitoring such as x-ray topography and transmission electron microscopy. In addition, a number of papers were selected which discuss the basic principles and the application potential of relatively novel analytical techniques that are just entering the semiconductor characterization arena. Out of Print.
Chemical Vapor Deposition (11th International Conference), K. E. Spear and G. W. Cullen, editors, PV 90-12, 734 pages. Sessions were held on: fundamentals-fluid dynamics, kinetics, and thermodynamics; application-specific and low temperature deposition; deposition of superconductors; silicon and germanium deposition; carbides, nitrides, and oxides for electronic applications; selective and nonselective tungsten and silicides; chemical vapor infiltration modeling and experiments; miscellaneous applications and measurements; and hard coatings and refractory materials. Out of Print.
Ion Implantation and Dielectrics for Elemental and Compound Semiconductors, S. J. Pearton, K. S. Jones, and V. J. Kapoor, editors, PV 90-13, 472 pages. The papers covered two critical aspects in the processing and fabrication of compound semiconductor devices, namely the deposition of dielectrics as encapsulants for annealing, for surface passivation, and the creation of doped or insulating regions by ion implantation. The topics of implant activation and annealing, ion-semiconductor interactions, synthesis of buried oxides and silicides by implantation, damage structures in implanted III-V materials, ion-induced disordering of superlattics and MeV implantation were addressed. Out of Print.
Plasma Processing (8th International Symposium), G. S. Mathad and D. W. Hess, editors, PV 90-14, 787 pages. Sessions were held on: modeling, mechanisms, and measurements; surface damage and modifications; ECR and microwave plasma processes; magnetron plasma processes; RECVD processes, and etching processes. Out of Print.
State-of-the-Art Program on Compound Semiconductors XII/Superlattice Structures and Devices, D. C. D'Avanzo, R. E. Enstrom, A. T. Macrander, and D. DeCoster, editors, PV 90-15, Montreal, Quebec, Canada - May 1990, 467 pages. The program for SOTAPOCS XII consisted of five half day sessions including: compound semiconductor surfaces; substrate, epitaxy and ion-implantation technologies; heterojunction devices and circuits; new process and device technologies; and opto-electronic device and integrated circuits. Ten papers were presented at the symposium on Superlattice Structures and Devices covering a wide range of topics including Si and III-V compounds, MBE and OMVPE growth techniques and x-diffraction and other characterization techniques. Out of Print.
Molten Carbonate Fuel Cell Technology (2nd International Symposium), J. R. Selman, H. C. Maru, D. A. Shores, and I. Uchida, editors, PV 90-16, 531 pages. This symposium volume provides an overview of recent advances in the fundamental knowledge base supporting MCFC development and is intended to help define the future directions of research. The symposium volume starts off with keynote contributions outlining the directions and shape of U.S. and Japanese commercialization efforts and research programs. These are followed by overview papers, summarizingecent results and status of major components of the MCFC and reviewingasic research supporting that development in Japan and the U.S. The second part of the volume contains research papers reporting progress in cell and stack testing, materials exploration and physico-chemical research on all aspects of the carbonate fuel cell. Out of Print.
Molten Salts (7th International Symposium), C. L. Hussey, J.. Wilkes, S. N. Flengas, and Y. Ito, editors, PV 90-17, 875 pages. These 69 papers cover a diverse range of topics, including batteries and fuel cells, electrochemistry, structure, theory, thermodynamics, transport properties, and both inorganic and organic synthesis. The titles of some of the papers: molten metal halides; structure of molten salts; ordered ionic liquids; structure analysis of an ambient temperature molten salt; electronic conduction in molten cryolite saturated with alumina; the temperature dependence of the thermal conductivity of molten salts; reduction of aromatic compounds in basic chloroaluminate melts; behavior of the chlorine electrode in fused alkali chlorides; the rmochemistry and models of ionic and non-ionic melts. Out of Print.
High Temperature Materials Chemistry (5th International Symposium) W. B. Johnson and R. A. Rapp, editors, PV 90-18, 248 pages. This symposium volume focuses on the chemical properties and behavior of materials at elevated temperatures. It covers the following topics: high temperature corrosion, high temperature processing of electronic materials, high temperature properties and reactions, laser and microwave processing of materials, high temperature synthesis of materials. Out of Print.
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