197th Meeting - Toronto, Ontario, Canada

May 14-19, 2000

Sheraton Centre Toronto

Call for Papers

Deadline for Abstracts is January 3, 2000!

A1--GENERAL SOCIETY STUDENT POSTER SESSION

(All Divisions and Groups)

This Poster Session provides a forum for graduate and undergraduate students to present research results of general interest to the Society. The purpose of this session is to foster and promote work in both electrochemical and solid state science and technology, and to stimulate active student interest and participation in the Society. A competition for the two best posters will be part of the session. A cash prize of $250 and a scroll will be awarded to the winning student authors. In the case of coauthors, a maximum award of $750 per winning poster will be divided equally between student coauthors. The awards will be made without regard to sex, citizenship, race, or financial need.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizers: J.M. Fenton, Department of Chemical Engineering, U-222, Room 208, University of Connecticut, Storrs, CT 06269 USA, Phone: (860) 486-2490, Fax: (860) 486-2959, E-mail: jmfent@engr.uconn.edu; and P.S. Fedkiw, Department of Chemical Engineering, North Carolina State University, 113 Riddick Laboratories, Box 7905, Raleigh, NC 27695-7905 USA, Phone: (919) 515-3572, Fax: (919) 515-3465, E-mail: peter_fedkiw@ncsu.edu

B1--MICRO POWER SOURCES

(Battery/Energy Technology)

Micro-power sources such as micro-batteries, micro-fuel cells and micro-capacitors that can provide power in the range of microwatt to milliwatt range for extended periods of time are required for several microelectronics devices that are being developed for future applications. These devices include computer memory chips, medical implantable devices, sensors, MEM's devices, radio-frequency transmitters etc. Papers are solicited on the both fundamental and applied aspects of development of these micro-power sources. This symposium will provide a forum to discuss recent progress that has been made in the development of electrode materials, electrolytes, fabrication methods and unique cell designs for micro-power sources.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: K. ZaghibInstitut de Recherche d'Hydro-Quebec (IREQ) 1800 Boul. Lionel Boulet Varennes (Quebec) Canada, J3X 1S1, Phone: (450) 652-8019, Fax: (450) 652-8424, E-mail: karimz@ireq.ca; and S. Surampudi, Jet Propulsion Laboratory, MS 277-211, 4800 Oak Grove Drive, Pasadena, CA 91109 USA, Phone: (818) 354-0352, Fax: (818) 383-6951, E-mail: subbarao.surampudi@jpl.nasa.gov

B2--BATTERY/ENERGY TECHNOLOGY JOINT GENERAL SESSION

(Battery/Energy Technology)

Papers are solicited on the fundamental and applied aspects of energy conversion, storage, and transmission not covered by other symposia at this Meeting. Of particular interest are unconventional conversion methods and applications, new materials for batteries and fuel cells, and novel methods for energy storage and transmission. In the case of batteries, examples are: 1. zinc-manganese dioxide, 2. lead-acid, 3. nickel-cadmium, and 4. nickel-zinc batteries, 5. lithium batteries.

Papers on theoretical models and the economics of energy systems are also welcome.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizers: R. Swaroop, EPRI, 3412 Hillview Avenue, Palo Alto, CA 94304 USA; Phone: (650) 855-1097, Fax: (650) 855-2737, E-mail: rswaroop@epri.com; and J.S. Symanski, 9569 West Upham Avenue, Greenfield, WI 53228 USA, Phone: (414) 228-2364, Fax: (414) 228-2008, E-mail: james.s.symanski@jci.com

C1--CORROSION INHIBITORS

(Corrosion)

In recent years there has been much interest in the development of corrosion inhibitors, primarily those that are environmentally friendly. The development of inhibitors, primarily those that are environmentally friendly. The development of inhibitors encompasses a wide range of topics ranging from understanding inhibition chemistry to novel delivery systems and "smart", self-sensing inhibitors. Many recent advances have occurred due to the development of local electrochemical, optical, electron and mechanical probes for characterizing inhibitor-substrate interactions.

This symposium will provide a forum to present papers on basic and applied research describing advances in the area of corrosion inhibitors. Papers are invited on a broad range of topics and applications including: natural product and biomimetic corrosion inhibitors, micro-encapsulation, redox sensors, localized probe techniques and quantitative analytical techniques. Papers are also invited on recent research in traditional inhibitor systems that provides new understanding or approaches for the study of emerging inhibitor systems.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: R.G. Buchheit, Ohio State University, Department of Materials Science and Engineering, 477 Watts Hall, 2041 College Road, Columbus, OH 43210 USA, Phone: (614) 292-6085, Fax: (614) 292-1537, E-mail: buchheit@er6s1.eng.ohio-state.edu; and D.C. Hansen, EG&G Instruments, Inc., 801 South Illinois Avenue, Oak Ridge, TN 37831 USA, Phone: (423) 483-2141, Fax: (423) 425-1334, E-mail: Doug_Hansen@egginc.com

C2--OXIDE FILMS

(Corrosion)

This symposium is concerned with oxide films on metals, alloys or semiconductors. Technological interest in understanding these films derives from their important roles in corrosion and corrosion protection, the electronics industry, and electrocatalysis, among other areas. The films to be considered can include "native" oxide films formed by contact of reactive surfaces with ambient oxygen or water, electrochemically or thermally grown films, and films deposited chemically or physically. Papers are sought on the following aspects of film behavior: mechanisms and kinetics of oxide growth and transport; characterization of film structure, composition, and electronic properties; defects and spatially heterogenous properties; mechanical properties such as stress; environmental interactions, including those leading to pitting and other forms of corrosion.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: K. R. Hebert, Iowa State University, Department of Chemical Engineering, 3231 Sweeney Hall, Ames, IA 50011 USA, Phone: (515) 294-6763, Fax: (515) 294-2689, E-mail: krhebert@iastate.edu; R. S. Lillard, Los Alamos National Laboratory, MS 6755, Los Alamos, NM 87544-0600 USA, Phone: (505) 665-5171, Fax: (505) 667-2264, E-mail: lillard@lanl.gov; and B.R. MacDougall, National Research Council, Institute for Environmental Chemistry, Ottawa, Ontario, Canada KIA0R6, Phone: (613) 993-8573, Fax: (613) 941-2529, E-mail: macdougall@nrc.ca

C3--CORROSION GENERAL SESSION

(Corrosion)

Papers concerning all aspects of corrosion and associated phenomena in liquid and gaseous phases not covered by topic areas of other specialized Corrosion Division symposia at this Meeting are welcome. Theoretical analyses, experimental techniques for the study of corrosion processes, and corrosion products are also of interest.

Contributed papers will be ordered depending on the titles and content of the Meeting Abstracts.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizer: C.R. Clayton, State University of New York at Stony Brook, Department of Materials Science and Engineering, Stony Brook, NY 11794 USA, Phone: (516) 632-8381, Fax: (516) 632- 8381, E-mail: cclayton@ccmail.sunysb.edu

D1 -- FIFTH INTERNATIONAL SYMPOSIUM ON LOW AND HIGH DIELECTRIC CONSTANT MATERIALS: MATERIALS SCIENCE, PROCESSING, AND RELIABILITY ISSUES

(Dielectric Science and Technology Division)

This symposium will emphasize all aspects of Low and High Dielectric Materials in Silicon and Compound Semiconductor Integrated Circuits, packaging of integrated circuits and microwave devices. In case of low dielectric constant materials, special emphasis will be placed on the issues related to the use of these materials in multilevel interconnections for ultra large scale integrated circuits. In case of high dielectric constant materials, special emphasis will be placed on the use of these materials for DRAM and as gate dielectric materials for sub 180 nm feature size integrated circuits. Papers are encouraged in all areas related to materials, processing, reliability, equipment, process integration and manufacturing.

Areas of interest include: 1. Fundamental issues in the synthesis and processing of low and high dielectric constant material systems, 2. Materials, processing and reliability issues related to low k dielectric materials with dielectric constant K, 3.84 , 3. Materials, processing, and reliability issues related to Al and Cu multilevel interconnect ( use of low K dielectric as the interlevel dielectric layer) systems, 4. Materials, processing and reliability issues related to high K dielectric (Ta2O5, BaSrTiO3, Pb LaZrTiO3 etc.) materials in DRAM, 5. Materials, processing and reliability issues related to high K dielectrics as gate dielectric materials for sub 180 nm feature size Si integrated circuits, 6. Issues related to the integration of low K materials in multilevel chip modules and other packaging systems, 7. Issues related to the integration of high K dielectric materials in microwave devices, 8. All aspects of equipment issues related to processing of low and K dielectric materials, and 9. All aspects of process integration issues of low and high K dielectrics.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: R. Singh, Department of Electrical & Computer Engineering, Clemson University, 102 Riggs Hall, Clemson, SC 29634 USA, Phone: (864) 656-0919, Fax: (864) 656-5910, E-mail: srajend@coe-nw.clemson.edu : H.S. Rathore, IBM Corporation, Dept 25M Zip AE1, East Fishkill Facility, Hopewell Junction, NY 12533 USA, Phone: (914) 892-2905, Fax: (914) 892-3039, E-mail: rathore@us.ibm.com; M.J. Loboda, Dow Corning Corporation, MS CO41A1, Midland, MI 48686 USA, Phone: (517) 496-6249, Fax: (517) 496-5121, E-mail: mark.loboda@dowcorning.com ; S.S. Ang, Department of Electrical Engineering, 3217 Bell Engineering Center, University of Arkansas, Fayetteville, AR 72701 USA, Phone: (501) 575-7683, Fax: (501) 575-7967, E-mail: ssa@engr.uark.edu; R.P.S. Thakur, Steag Electronik Systems, 4425 Fortran Drive, San Jose, CA 95134 USA, Phone: (408) 935-2010, Fax: (408) 935-2775, E-mail: randir.thakur@agai.com; C.C. Schuckert, DuPont Co., 1201 Hopeton Road, Wilmington, DE 19807-3014 USA, Phone: (302) 658-4836, Fax: (302) 658-3330, E-mail: craig.c.schuckert@usa.dupont.com; and S.C. Sun, Taiwan Semiconductor Manufacturing Co., No. 9 Creation Road 1, Science Based Industrial Park, Hsinchu, Taiwan 300, Phone: (519) 933-3184, Fax: (519) 933-5497, E-mail: scsun@tsmc.com.tw

D2--PLASMA PROCESSING XIII

(Dielectric Science and Technology/Electronics)

This symposium solicits original papers, emphasizing both fundamental and applied aspects of plasma processing used in 0.35 and sub-0.35 um device fabrication. The following topics are suggested: i) new plasma source and reactor designs, ii) process modeling, iii) novel processes for thin film etching, iv) plasma diagnostics & process control, v) modeling & control of plasma damage, and vi) PE-CVD.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: G.S. Mathad, Siemens, ITTM, 1167 Route 52, Suite 206, Fishkill, NY 12524-1616 USA, Phone: (914) 897-1134, Fax: (914) 897-5713, E-mail: smathad@dda.siemens.com; D.W. Hess, School of Chemical Engineering, Georgia Institute of Technology, 778 Atlantic Drive, Atlanta, GA 30332 USA, Phone: (404) 894-5922, Fax: (404) 894-2866, E-mail: dennis.hess@che.gatech.edu; M. Meyyappan, NASA Ames Research Center, MS 229-3, Moffett Field, CA 94035 USA, Phone: (650) 604-2616, Fax: (650) 604-5244, E-mail: meyya@orbit.arc.nasa.gov; M. Yang, Texas Instruments,Inc., Silicon Technology Development, 13570 North Central Expressway, MS 3701, Dallas, TX 75243 USA, Phone: (972) 995-8289, Fax: (972) 995-4432, Email: myang@ti.com; and C.K. Celler, Bell Laboratories - Lucent Technologies, Room 3L-402, 600 Mountain Avenue, Murray Hill, NJ 07974-0636 USA, Phone: (908) 582- 2861, Fax: (908) 582-2950, E-mail: ckc@lucent.com

D3--THIRD INTERNATIONAL SYMPOSIUM ON ENVIRONMENTAL ISSUES WITH MATERIALS AND PROCESSES FOR THE ELECTRONICS AND SEMICONDUCTORS INDUSTRIES

(Dielectric Science and Technology/Electronics)

Recent increases in environmental awareness on issues such as global warming, greenhouse gases, ozone depletion, and toxic pollutants will have a profound effect on the process technologies used for electronic component manufacture. This symposium will focus on these issues with emphasis on the waste treatment and abatement of the materials causing such detrimental effects. Topics will focus on these issues with emphasis on the waste stream treatment and recovery, gas stream abatement and possible alternative chemistries. Both invited and contributed papers will be represented from industry, academia, and government.

The Following environmental areas of concern are suggested: 1. CVD and PVD metallization for semiconductor and electronics processing; 2. CMP processes, slurry chemistries; 3. Wet and Dry etch chemistries; 4. Heavy metal contaminants from plating and solder processes; 5. New and current dielectric processing and materials; 6. Photoresist solvents and materials; 7. Implant gases and abatement issues; 8. Passivation and barrier layers; 9. Encapsulation materials; and 10. III/V semiconductor materials and processes.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: L. Mendicino, Motorola Corporation, M/S K-10, 3501 Ed Bluestein Boulevard, Austin, TX 78721 USA, Phone: (512) 933-3938, Fax: (512) 933-6962, E-mail: ra1573@email.sps.mot.com; and L. Simpson, Applied Materials, Inc., 9050Capital of Texas Highway, Suite 320, Austin, TX 78759 USA, Phone: (512) 272-7606, Fax: (512) 272-7646, E-mail: logan_simpson@amat.com

E1--TRIBOLOGY OF ELECTRODEPOSITED AND COMPOSITE LAYERS

(Electrodeposition)

The tribology (wear, friction and lubrication) of electrodeposited coatings is becoming increasingly important in a variety of applications. The properties and processing of electrolytic and electroless deposits are the target areas of this symposium. Specific topics include: 1. Electrodeposition of advanced materials including: alloys, composites, and nanostructured materials, having tribologically relevant applications; 2. Testing of tribological properties, measurement design, instrumentation and analysis advances; 3. Interactions between chemical and wear processes, tribocorrosion; 4. Tribological features important to MEMS devices and magnetic thin-film technology; 5. Modeling of the electrodeposition process of tribologically important materials; 6. Modeling fundamentals related to tribological phenomena; 7. Chemical-mechanical polishing (CMP) of electrodeposits. Both applied and theoretical papers are welcome.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: D.D. Snyder, General Motors R&D Center, Physics and Physical Chemistry Department, MS 480-106-224, 3050 Mound Road, Warren, MI 48090 USA, Phone: (801) 986-0706, Fax: (810) 986-3091, E-mail: dsnyder@cmsa.gmr.com; J. Fransaer, KULeuven, Department of Metallurgy and Materials Engineering, de Croylaan 2, 3001 Heverlee, Belgium, Phone: 32-16-321239, Fax: 32-16-321991, E-mail: jan.fransaer@mtm.kuleuven.ac.be; and E.J. Podlaha, Louisiana State University, Department of Chemical Engineering, South Stadium Road, Baton Rouge, LA 70803 USA, Phone (225) 388-3056, Fax: (225) 388-1476, E-mail: podlaha@che.lsu.edu

F1--ELECTROCHEMICAL PROCESSING IN ULSI FABRICATION III

(Electrodeposition/Dielectric Science and Technology/Electronics)

Electrochemical processes are receiving much attention in microelectronic applications. The most prominent example at present is the electrochemical deposition of copper for interconnect wiring on silicon wafers. Another technology of high commercial impact is solder deposition for flip-chip interconnects. Many other electrochemical processes and techniques, at various stages of emergence and development, hold promise for the electronics industry and beyond; these include chemical-bath deposition of semiconductors and compounds, formation of heterojunctions and metal- semiconductor contacts, deposition of magnetic multi layers and nanowires, wet etching, chemical-mechanical polishing, electrolytic and electroless deposition of patterned structures, and scanning-probe patterning.

This symposium is intended to be a balanced forum for discussion of both the practical and fundamental aspects of electrochemical processes. Practical aspects of interest include: design and modeling of plating and etching equipment; thickness uniformity; patterning techniques; shape evolution and filling of high-aspect-ratio cavities; bath-composition control; integration of the electrochemical process with other process steps to make devices; device performance; electromigration, failure modes, and device reliability. Consideration is given to the multi-disciplinary technological challenges involved in implementing an electrochemical process in semiconductor manufacturing. Fundamental aspects of interest include: the initial stages of nucleation and growth as revealed by in-situ and ex-situ means such as SPM, X-ray techniques, and TEM; the influence of surface pretreatment; the action of additive molecules at electrode surfaces; structural and electrical characterization of interfaces (e.g., Schottky diode, ohmic contacts, heterojunctions). Much emphasis will be given to process-structure-property relationships, since process dynamics determine material and interfacial structure, which in turn determine numerous properties and ultimately device characteristics.

Contributions are solicited in the following areas: electroless and electrolytic plating of copper and copper alloys for chip wiring; integration aspects of chip metallization based on copper; failure and reliability of copper metallization especially as they relate to deposit properties and methods of deposition; influence of organic additives on shape evolution and deposit properties; processes for electrochemical deposition, removal, and patterning of lead-containing and lead-free solders for flip-chip interconnection; design and modeling of plating and etching tools; porous silicon formation and characterization; device isolation processing; anisotropic electrochemical processes for high levels of integration; electrochemical aspects of chemical-mechanical polishing (CMP) technology including mechanisms, slurry composition and performance, and process characterization and control; novel applications of electrochemical processes in ULSI fabrication; electrochemical deposition of magnetic thin films, multilayers and wires on semiconductor substrates; nanocontact formation and characterization; patterning using scanning-probe microscopy (SPM) for nanoelectronics applications; electrochemical deposition of microelectromechanical devices including LIGA; electrodeposition of compound semiconductors; deposition phenomena related to impurities and to wafer cleaning.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: P.C. Andricacos, IBM T.J. Watson Research Center, P.O. Box 218, Box 04-204, Yorktown Heights, NY 10598-0218 USA, Phone: (914) 945-2683, Fax: (914) 945-4520, E-mail: ndricac@us.ibm.com; P.C. Searson, Department of Materials Science and Engineering, The Johns Hopkins University, 102 Maryland Hall, Baltimore, MD 21218 USA, Phone: (410) 516-8774, Fax: (410) 516-5293 E-mail: searson@jhu.edu; C. Reidsema- Simpson, Motorola, Advanced Products Research and Development Laboratory, 3501 Ed Bluestein Boulevard MS K-10, Austin, TX 78721 USA, Phone: (512) 933-3184, Fax: (512) 933-6962, E-mail: ra1557@email.sps.mot.com; P. Allongue, Laboratoire de Physiques des Liquides et Electrochimie, CNRS-UPR15, Universite Paris 6, 4 place Jussieu, Tow 2225, 75005 Paris, France, Phone: 33-01-44-274147, Fax: 33-01-434-274074, E-mail: pa@ccr.jussieu.fr; J.L. Stickney, Department of Chemistry, University of Georgia, Athens, GA 30602 USA, Phone (706) 542-1967, Fax: (706) 542-9453, E-mail: stickney@sunchem.chem.uga.edu; and G.M. Oleszek, Department of Electrical and Computer Engineering, University of Colorado, P.O. Box 7150, Colorado Springs, CO 80933-7150 USA, Phone: (719) 593-3490, Fax: (719) 548-9404, E-mail: gmoleszek@eas.uccs.edu

G1--COMPOUND SEMICONDUCTOR POWER TRANSISTORS II

(Electronics)

This symposium will provide a central forum to update scientific and technical information covering a wide range of compound semiconductor power transistors technologies. Symposium solicits papers in the following areas: 1. Growth techniques for power transistor materials; 2. Novel power device structures; 3. Advanced packaging and wafer scale thermal management; 4. Reliability and degradation mechanisms of power devices; 5. Simulation tools for power devices; 6. Advanced processing techniques; and 7. Testing at high current and voltage.

The symposium will consist of both invited and contributed papers.

Publication of a joint Proceedings Volume is planned with SOTAPOCS (G4), to be published before the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words by February 1, 2000. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: A. G. Baca, Sandia National Laboratories, MS 0603, P.O. Box 5800, Albuquerque, NM 87185-0603, Phone: (505) 844-7127, Fax: (505) 844-8985 E-mail: agbaca@sandia.gov; F. Ren, University of Florida, Department of Chemical Engineering, 227 Chemical Engineering Blvd. Room 317, Gainesville, FL 32611 USA, Phone: (352) 392-4727, Fax: (352) 392-9513, E-mail: fren@che.ufl.edu; C. Bozada, US Air Force, 2241 Avionics Circle, Room C2G69, WPAFB, OH 45433-7322 USA, Phone: (937) 255-1874, ext. 3376, Fax: (937) 1444-2306, E-mail: bozada@el.wpafb.af.mil; and S.N.G. Chu, Bell Laboratories - Lucent Technologies, Room 7C-221, 600 Mountain Avenue, Murray Hill, NJ 07974-0636 USA, Phone: (908) 582-7318, Fax: (908) 582-7660, E-mail: sngchu@bell-labs.com.

G2--ELECTRONIC AND PHOTONIC MATERIALS FOR THE 21ST CENTURY

(Electronics)

In this symposium we attempt to anticipate the materials technologies that will enable the electronic and photonic devices, circuits, and systems of the 21st century. Currently known limitations in materials, processing, and device performance will be discussed. Materials technologies which will contribute to circumventing these limitations in the next generations of devices and systems will be identified. Emphasis will be placed on the potential impact of innovative materials technologies on device performance and on the viability of processing the devices of the 21st century. All of the speakers in this symposium will be invited. Controversial and speculative opinions will be encouraged.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: G.K. Celler, Bell Laboratories, Lucent Technologies, Room 3L-402, 600 Mountain Avenue, Murray Hill, NJ 07974-0636 USA, Phone: (908) 582-2861, Fax: (908) 582-2950, E-mail: gkc@lucent.com; G.W. Cullen, David Sarnoff Research Center, P.O. Box 5300, Princeton, NJ 08543-5300 USA, Phone: (609) 734-2851, Fax: (609) 734-2035, E-mail: gcullen@sarnoff.com; T. Abe, Shin-Etsu-Handotai, Isobe 2-Chome, Annaki-Shi, Gunma-ken 379- 0196 Japan, Phone: 81-27-385-2575, Fax: 81-27-385-2774, E-mail: abe@seh.co.jp; and C.L. Claeys, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, Phone: 32-16-281328, Fax: 32-16-281214, E-mail: cor.claeys@imec.be.

G3--FABRICATION ISSUES FOR SUB-TENTH MICRON DEVICE TECHNOLOGIES

(Electronics)

The fundamental demands for lower power dissipation, increased performance and lower cost have been the driving forces for the current accelerated development of 0.18 and 0.13 micron silicon technologies. These same requirements mandate future generations of silicon technologies that will advance into the sub-tenth micron region. However, manufacture of devices with sub-tenth micron features will require significant innovations in fabrication processes and device design. The purpose of this symposium is to provide a forum for the presentation and discussion of the unique issues associated with sub-tenth micron technology development.

Both experimental and theoretical papers are solicited in the areas of materials, fabrication, processing, device physics- modeling-simulation, topological and vertical structure innovations, and the fundamental limits associated with sub-tenth micron silicon technologies. The symposium will consist of invited and contributed papers. Sessions will be organized around common subjects in order to enhance discussion on fundamental issues.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: G. M. Oleszek, Department of Electrical and Computer Engineering, University of Colorado, 1420 Austin Bluffs Parkway., P.O. Box 7150, Colorado Springs, CO 80933-7150 USA, Phone: (719) 593-3490, Fax: (719) 548-9404, E-mail: goleszek@eas.uccs.edu; J. L. Benton, Bell Laboratories, Lucent Technologies, Room 1E430, 600 Mountain Avenue, P.O. Box 636, Murray Hill, NJ 07974, USA, Phone: (908) 582-3643, Fax: (908) 582-4228, E- mail: jlb@bell-labs.com

G4--STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXII

(Electronics)

The thirty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) will address the most recent advances in compound semiconductors. Original contributions are solicited on materials growth, characterization, processing, device fabrication, reliability, and other related topics. Papers on both practical issues and fundamental studies, are solicited. Specific areas of interest include: 1. Novel devices and materials growth. 2. New advances of processing technologies. 3. Characterization of materials, devices, and processes. 4. Wide bandgap material growth and processing. 5. Wafer-level testing and mapping. 6. Device degradation mechanisms. 7. Monolithic device integration. 8. High-speed III-V electronics technologies for wireless, automotive and microwave applications. 9. Fundamental optical, electrical, and other physical properties.

This symposium will consist of both invited and contributed papers.

Publication of a joint Proceedings Volume is planned with Compund Semiconductor Power Transistors II (G1), to be published before the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words by February 1, 2000. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: R.F. Kopf, Lucent Technologies, Bell Laboratories, Room 1C413A, P.O. Box 636, 600 Mountain Avenue, Murray Hill, NJ 07974-0636 USA, Phone: (908) 582-5280, Fax: (908) 582-6322, E-mail:rek@lucent.com; R.E. Sah, Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, D-79108 Freiburg, Germany, Phone: 49-761-5159-175, Fax: 49-761-5159-400, E-mail:sah@iaf.fhg.de, D.N. Buckley , University of Limerick, Department of Physics, Limerick, Ireland, Phone: 353-61-202902, Fax: 353-61-202423, E-mail: noel.buckley@ui.ie; K.H. Chen, Academia Sinica, National Taiwan University, 886-2-366-8232, Fax: 886-2- 366-8232, E-mail:chenkh@ns.iams.sinica.edu.tw; Y. Mochizuki, Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan, Phone: 81-298-56-6122, Fax: 81-298-56-6137, E- mail: mochizuk@frl.cl.nec.co.jp, and J.P. Vilicot, Institut d'Electronique et de Microelectronique du Nord, UMR CNRS 9929, Avenue Poincare, BP 69, F-59652, Villeneuve D'Ascq Cedex, France, Phone: 33-320107065, Fax: 33-3209- 7966, E-mail: vilcot@iemn.univ-lille1.fr

H1--FOURTH INTERNATIONAL SYMPOSIUM ON THE PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE

(Electronics/Dielectric Science and Technology)

The Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface provides a forum where researchers from different disciplines can come together to discuss the physics and chemistry of SiO2 and its interface with silicon. Engineers, physicists, chemists, materials scientists, metallurgists, ceramicists, geologists, mineralogists, and all others interests in different aspects of the SiO2 system are encouraged to attend and increase their contacts and interactions.

This symposium, which is sponsored by the Electronics Division of ECS, is the fourth in a series, and follows the one held in Los Angeles in the 1996 Spring Meeting of The Electrochemical Society. The fourth symposium is planned to provide an opportunity to examine the progress made in all areas of our understanding of this important system over the last four years. This symposium will also provide a forum to explore future directions in dielectrics science and technology in the next millennium.

Contributed papers are solicited on the following topics to complement invited talks: 1. Insulator Technology: cleaning and its effects on SiO2 growth and properties; thermal, rapid-thermal, and other assisted-growth mechanisms; deposited insulators. 2. Insulator Properties: thermal, structural, chemical, and electronic properties of SiO2, oxynitrides, and other related insulators; insulator bulk and interface defects and traps; electron and hole transport in insulators; direct tunneling and Fowler-Nordheim tunneling; injection and radiation damage; breakdown mechanisms. 3. Interface Properties: structural, chemical, and electronic properties of the Si-SiO2 interface; silicon interface to alternate insulators; SiO2 interfaces to other semiconductors and contacts. 4. Device-Related Issues: ultrathin dielectrics (10-100 A); buried oxides and bonded interfaces; nanostructure effects; single-electron phenomena.

Authors must submit 4 copies of a one-page abstract (500-word maximum) by October 1, 1999 to the Symposium Organizer: H. Z. Massoud, Department of Electrical and Computer Engineering, 163 Hudson Hall, P.O. Box 90291, Duke University, Box 90291, Science Drive, Durham, NC 27708-0291 USA. Accompanied by a cover letter, this 500-word abstract should clearly indicate the purpose of the work, the approach, the manner and degree to which it advances the field, specific results, and their significance. This is required in order to assist the reviewers in evaluating the suitability of the abstract to be selected for oral presentation at the symposium. On November 10, 1999, authors will be notified of acceptance and given instructions for manuscript preparation.

A complete Meeting Abstract must be submitted via the ECS Web Site by January 2, 2000.

Publication of a Proceedings Volume is planned before the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit three copies of a typed camera ready copy of the full proceedings volume manuscript and list of key words by January 5, 2000 to allow time for both full-manuscript review and the publication of the Symposium Proceedings.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: H.Z. Massoud, Department of Electrical and Computer Engineering, Duke University, Durham, NC 27708-0291 USA, Phone: (919) 660-5257, Fax: (919) 660-5293, E-mail: massoud@ee.duke.edu; I. Baumvol, Instituto de Fisica - Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre RS, Brazil, E-mail: israel@if.ufrgs.br; M. Hirose, Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan, E-mail: hirose@sxsys.hiroshima-u.ac.jp; and E.H. Poindexter, Army Research Laboratory, AMSRL-SE, 2800 Powder Mill Road, Adelphi, MD 20783 USA, Phone: (301) 394-1287, Fax: (301) 394-1318, E-mail: epoindexter@arl.mil

H2--DIELECTRIC SCIENCE AND TECHNOLOGY/ELECTRONICS JOINT GENERAL SESSION

(Electronics/Dielectric Science and Technology)

Original papers are solicited on all aspects of electronic materials, devices, and processing technologies not covered by specialized topical symposia at this Meeting. The sessions will be organized depending on the content of the Meeting Abstracts. One or more of the sessions may be organized as a poster session. Contributors should specify their preference as to poster or oral presentation, and all efforts will be made to accommodate their requests.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizers:

W. D. Brown, 3217 Bell Center University of Arkansas, Fayetteville AR 72701 USA, Phone:(501) 575-6045, Fax: (501) 575-7967, E-mail: wdb@engr.uark.edu">wdb@engr.uark.edu, R. K. Ulrich, 3203 Bell Center, University of Arkansas, Fayetteville AR 72701 USA, Phone: (501) 575-5645, Fax: (501) 575-7926,E-mail: rku@engr.uark.edu, R.B. Fair, Duke University, Department of Electrical and Computer Engineering, Durham, NC 27708, Phone: (919) 660-5277, Fax: (919) 660-5221, E-mail: rfair@ee.duke.edu; K.B. Sundaram, University of Central Florida, Department of Electrical Engineering, Orlando, FL 32816 USA, Phone: (407) 823-5326, Fax: (407) 823-5835, E-mail: kbs@ece.engr.ucf.edu; and M.J. Deen, Simon Fraser University, School of Engineering Science, Vancouver, British Columbia, Canada V5A 1S6, Phone: (604) 291-3248, Fax: (604) 291-4951, E-mail: jamal@cs.sfu.ca

I1--RAPID THERMAL AND OTHER SHORT-TIME PROCESSING TECHNOLOGIES

(Electronics/Dielectric Science and Technology/High Temperature Materials)

This symposium will cover the latest developments in Rapid Thermal Processing and other short-time processing technologies with emphasis on CMOS gate stack, source/drain and channel engineering. As such in addition to conventional RTP technologies such as RTA, RTO and RTCVD, and related equipment and modelling issues, we welcome applications of techniques such as UV or laser-assisted processing in annealing, doping, etc., and thin-film deposition techniques such as short-time UHV-CVD, MBE, sputtering, etc., for the synthesis of ultra-thin films.

Researchers and technologists are encouraged to submit their abstracts on applications in the areas of: formation and/or deposition of ultra-thin gate dielectrics (including novel higher dielectric constant materials) and their gate electrodes; doping technologies to form ultra-shallow junctions; formation of low-resistivity contacts to such junctions; advanced channel engineering approaches including Si-Ge channels and ultrathin SOI technologies; equipment issues. Papers outside mainstream CMOS engineering (or integration), such as III-V compound semiconductors, flat panel displays, compound, glass reflow, and non-semiconductor thin films are also welcome, provided they represent breakthroughs in applications of short-time processing. Finally, new developments in RTP and other short-time processing equipment to improve throughput, uniformity, process control and modelling are of special interest to this symposium.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizers: F. Roozeboom, Philips Research Labs (WA 14), Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands, Phone: 31-40-2742767, Fax: 31-40-2743352, E-mail: roozeboo@natlab.research.philips.com; J.C. Gelpey, Steag-AST Elektronik, 4904 Heatherwood Lane, Peabody, MA 01960 USA, Phone: (978) 535-2260, Fax: (978) 535-1677, E-mail: JeffAST@aol.com; M.C. Ozturk, North Carolina State University, Department of Electrical and Computer Engineering, PO Box 7911, Raleigh, NC 27695-7911 USA, Phone: (919) 515 5245, Fax (919) 515-3027, E-mail: mco@eos.ncsu.edu; K. Reid, Motorola, MD K-10, 3501 Ed Bluestein Boulevard, Austin, TX 78721 USA, Phone: (512) 933-5371, Fax: (512)-933-2691, Email: rzg140@email.sps.mot.com; D.-L. Kwong, University of Texas at Austin, MER 2.60A, Mailcode R9950, Austin, TX 78712-1100 USA, Phone: (512) 471-5922, Fax (512) 471-4345, E-mail: dlkwong@mail.utexas.edu; and S.E. Mohney, Pennsylvania State University, Department of Materials Science and Engineering, 221 Steidle Building, University Park, PA 16802 USA, Phone: (814) 863-0744, Fax: (814) 865-2917, E-mail: mohney@ems.psu.edu

J1--THIN FILM SOLID STATE ENERGY DEVICES

(Energy Technology)

The organizers of this symposium invite researchers to present work related to thin film materials and devices incorporating II-VI and chalcopyrite compounds and alloys for solar energy conversion (photovoltaics), III-V compounds and alloys for solar energy conversion as well as heat energy (thermophotovoltaic) conversion, and innovative materials and concepts (such as superlattices) for thermoelectric energy conversion. Examples of topics include innovative growth or characterization techniques for any of these thin film materials, device studies including multijunction concepts for high efficiency photovoltaics, low-cost substrate ideas for single-crystal-like thin films, and quantum confinement concepts such as nanocrystals or superlattices for energy conversion. We encourage overview presentations by recognized authorities in these fields.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: R.D. McConnell, Center for Basic Sciences, National Renewable Energy Laboratory, 1617 Cole Blvd, Golden, CO 80401 USA, Phone: (303) 384-6419, Fax: (303) 384-6481, E-mail: robert_mcconnell@nrel.gov; and V.K. Kapur, International Solar Electric Technology, Inc., 5350 Corbin Avenue, Tarzana, CA 91350 USA, Phone: (310) 216-4427, Fax: (310) 216-2908, E-mail: vkkapur@earthlink.net

K1--NANOSTRUCTURED MATERIALS IN ELECTROCHEMISTRY AND PHOTOELECTROCHEMISTRY

(Energy Technology/Fullerenes)

The preparation and characterization of nanostructured materials as particles, composites and thin films are becoming increasingly important in electrochemistry and photoelectrochemistry. Examples include catalysts for fuel cell applications, chemical sensors and semiconductors for photovoltaic and photoelectrochemical solar energy conversion. This Symposium will focus on critical issues and latest advancements in the science and technology of nanostructured materials. Papers are solicited in all areas related to materials including metals, semiconductors, and self assembled monolayers.

Areas of interest include: 1.Electrochemical and chemical deposition methods for casting nanostructured films of semiconductors, metals and composites 2. Self assembled monolayers of nanoparticles and nanocomposites; 3. Quantum dots and size quantization effects ;4. Surface characterization including IR, NMR, STM, AFM and non-linear spectroscopic methods (SHG, SFG) confocal and near field spectroscopies; 5. Charge separation and interfacial charge transfer; 6. Dye-sensitization of semiconductor thin films 7. Photoelectrochemistry of nanostructured films; and 8.Applications related to chemical sensors, solar energy conversion and storage, environmental management and remediation, catalysis and analytical chemistry.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: P.V. Kamat, Radiation Laboratory, University of Notre Dame, Notre Dame, IN 46556-0579 USA, Phone: (219) 631-5411, Fax: (219) 631-8068, E-mail: pkamat@nd.edu; and K. Uosaki, Division of Chemistry, Graduate School of Science, Hokkaido University, Sapporo, Japan 060-0810, Japan, Phone: 81-11-706-3812; Fax: 81-11-706-3440; E-mail: uosaki@pcl.sci.hokudai.ac.jp

L1--TUTORIALS IN ENERGY CONVERSION DEVICES

(Energy Technology/Industrial Electrolysis and Electrochemical Engineering/Battery)

Tutorial papers on energy conversion devices are solicited. Subjects can range from the fundamental and applied aspects of energy conversion to design principles and materials selection for systems ranging from aqueous and nonaqueous batteries to fuel cells and photoelectric and thermoelectric cells. Of particular interests are new development in micro-turbines and generators, micro-fuel cells and batteries on a chip. The paper should be tutorial in nature to advance the education of scientists and engineers.

Publication of a Proceedings Volume is planned before the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words by February 1, 2000. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: T.V. Nguyen , Department of Chemical and Petroleum Engineering, 4006 Learned Hall, University of Kansas, Lawrence, KS 66044 USA, Phone: (785) 864-3938, Fax: (785) 864-4967, E-mail: cptvn@kuhub.cc.ukans.edu; J. Prakash, Department of Chemical and Environmental Engineering, 10 West 33rd Street, Chicago, Illinois Institute of Technology, IL 60616 USA, Phone: (312) 567-3639, Fax: (312) 567-8874, E- mail: prakash@charlie.cns.iit.edu, and B.V.Ratnakumar, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive #277-207, Pasadena, CA 91109-8001 USA, Phone: (818) 354-0110, Fax: (818) 393-6951, E-mail: ratnakumar.V.Bugga@jpl.nasa.gov

M1--APPLICATIONS OF SURFACE SCIENCE TO ENERGY TECHNOLOGIES

(Energy Technology/Physical Electrochemistry)

The purpose of this symposium is to demonstrate the impact on research in the field of electrochemical energy technologies by the recent adaptation to electrochemistry of a vast multitude of surface science techniques developed (or improved) in the last decade. The technologies that will be concerned are: (I) electrochemical materials science related to batteries, electrodeposition and intercalation processes, (ii) electrocatalysis, including fuel cell catalysis, and (iii) corrosion at the metal/solution interface. The focus will be on documenting the increasing knowledge of the elementary processes involved in the chemical reactions related to these technologies (on the molecular-level), with the emphasis on the nature of surface-reactant interactions at relevant interfaces. These interactions can either be two dimensional, such as those encountered in electrocatalysis (both on the model and/or well-defined surfaces or on nano-crystalline highly dispersed formulations), or three dimensional, such as those involved in intercalation hosts (cage-like spinel, or layered structures).

This call aims to solicit papers, which will cover not only the applications of the traditional ultra-high vacuum techniques (AES, XPS, LEED, EELS, HREELS, etc.), but also the newer extensions of these methods. Among these are the synchrotron based spectroelectrochemical techniques of adsorption and scattering of radiation in the broad spectral range, including far infrared radiation. In addition, techniques such as an in situ scanning tunneling microscopy (STM) and quartz crystal microbalance have an increasing utility in identifying electrochemical structure of interest to this Symposium.

The list of typical spectroscopies that will fall under the overall scope of this Call for Papers is the following: Ultra- high vacuum techniques: XPS, AES, LEED, EELS (core level), HREELS etc., synchrotron based x-ray techniques: X-ray adsorption and diffraction, synchotron far-infrared methods, FTIR techniques such as SNIFTIRS, IRRAS, etc., scanning probe microscopies including Atomic Force Microscopy and Scanning Tunneling Microscopy, Electrochemical quartz crystal microbalance, differential electrochemical mass spectrometry, second harmonic generation/sum frequency generation, electrochemical NMR spectroscopy, surface enhanced raman spectroscopy, Kelvin probes, and electron spin resonance.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: S. Mukerjee, Department of Chemistry, Northeastern University, 1 Hurtig Hall, 360 Huntington Avenue, Boston, MA 02115 USA, Phone: (617) 373-2382, Fax: (617) 373-8795, E-mail: smukerje@lynx.neu.edu; and A. Wieckowski, Department of Chemistry, Box 56-5, University of Illinois at Urbana- Champaign, 600 South Mathews, Urbana, IL 61801 USA, Phone: (217) 333-7943, Fax: (217) 244-8068, E-mail: andrezej@scs.uiuc.edu

N1-N9 FULLERENES, NANOTUBES AND CARBON NANOCLUSTERS

(Fullerenes Group)

Papers are invited for this symposium in the areas listed below. Authors should clearly state the appropriate symposium number, N1 through N9, on the Meeting Abstract. The Meeting Abstract must be submitted via the ECS Website by January 2, 2000. The organizers of each symposium will determine the suitability of the papers for inclusion in the oral or poster presentation of the program.

Publication of one or more Proceedings Volumes is planned on the topics below. Acceptance of a paper for presentation will obligate the author(s) to submit a camera-ready manuscript at the meeting. The Proceedings Volumes will include sections as the topics listed below. Specific details about the format for contributed papers for the Proceedings Volume can be obtained from the Session Organizers of each symposium.

Questions and information may be obtained from: K.M. Kadish, University of Houston, Department of Chemistry, Houston, TX 77204-5641 USA, Phone: (713) 743-2740; Fax: (713) 743-2745; E-mail: kkadish@uh.edu; and P.V. Kamat, Notre Dame Radiation Laboratory, Notre Dame, IN 46556-0579, Phone:(219) 631-5411, Fax: (219) 631-8068, E-mail: pkamat@nd.edu. Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Organizers of the corresponding symposium listed below:

N1 - FULLERENES IN THE UNDERGRADUATE CURRICULUM

(Fullerenes Group)

This symposium will focus on methods for using the novelty and appeal of fullerenes to enhance undergraduate chemical education. The main focus will be curricular innovations that bring fullerenes into laboratory courses taught to chemistry majors. Papers are welcome describing implemented or planned courses that involve any of the following topics: preparation, separation, purification, spectroscopy, characterization, or computer modeling of fullerenes and their derivatives. These projects may be taught as free-standing modules or instead form parts of conventional lab courses in organic, analytical, instrumental, or physical chemistry. Participants will be expected to share new ideas and report on successful approaches.

Organizer: R.B. Weisman, MS-60, Department of Chemistry, Rice University, 6100 Main Street, Houston, TX 77005 USA. Phone: (713) 527-8101, ext. 3709, Fax: (713)285-5155, E-mail: weisman@rice.edu

N2 - ELECTROCHEMISTRY AND ESR

(Fullerenes Group)

Papers are invited in the following areas of Fullerenes and Carbon Nanotubes: Electrochemistry, ESR, electron transfer chemistry, spectroelectrochemistry, photoelectrochemistry, catalysis, sensor studies and applications. of fullerenes and related compounds (carbon nanotubes, organofullerenes, electroactive fullerenes, supramolecular fullerenes, organometallic fullerenes, endohedral fullerenes, fullerene films and composites).

Organizers.: F. D'Souza, Department of Chemistry, Wichita State University, 1845 Fairmount, Wichita, KS 67260-0051 USA, Phone: (316) 978-3120, Fax: (316) 978-3431, E-mail: dsouza@wsuhub.uc.twsu.edu, and S. Fukuzumi, Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan, Phone: 81-6-6879-7368, Fax: 81-6-6879-7370, E-mail: fukuzumi@chem.eng.osaka-u.ac.jp

N3 - PHOTOINDUCED PROCESSES

(Fullerenes Group)

The focus of this symposium is to discuss the photochemical and photophysical aspects of fullerenes, functionalized fullerenes, and photoactive donor-acceptor type assemblies. Topics of this symposium range from excited state properties, energy and electron transfer processes, free radical induced reactions, and photochemical transformations to light energy harvesting aspects of fullerene based materials.

Organizers: D.M. Guldi, Radiation Laboratory, University of Notre Dame, Notre Dame, IN 46556 USA Phone: (219) 631-7441, Fax: (219) 631-8068, E-mail: guldi@hertz.rad.nd.edu; and K.P. Dinse, Phys. Chem. III, Tu Darmstadt, Petefrenstrasse 20, D-64287 Darmstadt, Germany, Phone: 49-6151-162607, Fax: 49-6151-164347, E-mail: dinse@pc07.pc.chemie.tu-darmstadt.de

N4 - FUNCTIONALIZED FULLERENES

(Fullerenes Group)

The purpose of this symposium is to provide a forum for the presentation of original research concerned with all aspects of chemical functionalization of the fullerenes. This rapidly growing area includes nucleophilic and radical additions, cycloadditions, hydrogenations, transition metal complex formation, oxidations and reactions with electrophiles. Also included are contributions on multiple additions to fullerenes, ring opening reactions, synthesis of heterofullerenes as well as studies toward the total synthesis of fullerenes. The mentioned topics may be considered as representative examples and should not be regarded as restrictive.

Organizers: M. Maggini, Department of Organic Chemistry, University of Padova Via Marzolo, 1 35131 Padova, Italy; Phone: 39-049-8275662, Fax: 39-049-8275239, E-mail: maggini@chor.unipd.it; and N. Martin, Department of Organic Chemistry, Faculty of Chemistry, Complutense University E-28040 Madrid, Spain, Phone: 34-91-394-4227, Fax: 34-91-394-4103, E-mail: nazmar@eucmax.sim.ucm.es

N5 - NANOTUBES AND NANOSTRUCTURED MATERIALS

(Fullerenes Group)

The symposium will addresses the research on fullerene nanotubes, nanoclusters and related materials as building blocks for novel nanoscale devices. Topics include new techniques for fabrication and study of nanoscale materials, morphology, characterization, chemistry and physics of nanoscale materials.

Organizers: S. Subramoney, E. I. DuPont de Nemours & Company, DuPont Experimental Station, Building 228, Room 114, Wilmington, DE 19880-0228 USA, Phone: (302) 695-2992, Fax: (302) 695-1351, E-mail: subrams@esvax.dnet.dupont.com; and Z. F. Ren, Department of Physics, Boston College, Chestnut Hill, MA 02167, Phone: (617) 552-3575, Fax: (617) 552-8478, E-mail: zren@bc.edu

N6 - ENERGETICS AND STRUCTURE OF FULLERENES

(Fullerenes Group)

Original research papers that address both theoretical and experimental aspects of fullerenes and carbon nanoclusters are being solicited for this symposium. The topics include quantum chemistry, topology, statistical mechanics, molecular dynamics, thermodynamics, kinetics, thermal properties, solubility, mechanism, ionization, collisons, electronic properties and catalysis.

Organizers: E. Osawa, Knowledge-Based Information Engineering, Toyohashi, University of Technology, Tempaku-cho, Toyohashi 441, Japan, Phone: 81-532-44-6881, Fax: 81-532- 48-5588, E-mail: osawa@cochem.tutkie.tut.ac.jp; Z. Slanina, Knowledge-Based Information Engineering, Toyohashi University of Technology, Tempaku-cho, Toyohashi 441, Japan, Phone: 81- 532-44-6880, Fax: 81-532-48-5588, E-mail: slanina@cochem2.tutkie.tut.ac.jp; O.V. Boltalina, Chemistry Department, Moscow State University, 119899, Moscow, Russia, Phone: 095-939-53-73, Fax: 095-939-12-40, E-mail: ovb@capital.ru; and G. Gigli, Departmento de Chimica, Universita di Roma "La Sapienza", 00185 Roma, Italy, Phone: 39-6-49913373, Fax: 39-6-49913951, E-mail: gigli@caspur.it

N7 - ENDOFULLERENES AND CARBON NANOCAPSULES

(Fullerenes Group)

Original papers are solicited on all aspects of endofullerenes such as endohedral metallofullerenes and endohedral rare-gas and other types of fullerenes. Papers on carbon nanocapsules and metal encapsulates are also welcome. The topics of this symposium include synthesis, characterization and properties of different types of endofullerenes and carbon nanocapsules.

Organizers: H. Shinohara, Nagoya University, Department of Chemistry, Nagoya 464-8602, Japan, Phone: 81-52-789-2482, Fax: 81-52-789-2962, E-mail: nori@chem2.chem.nagoya-u.ac.jp; and T. Akasaka, Graduate School of Science and Technology, Niigata University, Niigata 950- 2181, Japan, Phone: 81-25-262-7390, Fax: 81-25-262-7390, E-mail: akasaka@gs.niigata-u.ac.jp

N8 - SOLID STATE PHYSICS

(Fullerenes Group)

The symposium focuses on the topic of solid state physics, structure and properties of fullerene compounds. The topics include chemical reactivity, superconductivity, surface studies, thin films, diffraction studies, thermal and electronic properties.

Organizers: K. Tanigaki, Department of Material Science, Faculty of Science, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585, Japan, Phone: +81-6-6605-255, Fax: +81-6-6905-563, E-mail: tanigaki@sci.osaka-cu.ac.jp; V. Buntar, Atomic Institute of the Austrian Universities, Schuettelstr. 115, A-1020 Vienna, Austria, Phone: 43-1-58-801-14190, Fax: 43-1-58-801-14199, E-mail: buntar@ati.ac.at; K. Prassides, School of Chemistry, Physics and Environmental Science, University of Sussex, Falmer, Brighton, BN1 9QJ, UK, Phone: 44-1273-678-454, Fax: 44-1273-677-196, E-mail: k.prassides@sussex.ac; and O. Gunnarsson, Max-Planck Institut, Postfach 800 665, Stuttgart D-70506, Germany, Phone: 49-711-6891669, Fax: 49-711-6891010, Email: gunnar@and.mpi-stuttgart.mpg.de

N9 - BIOCHEMICAL AND PHARMACEUTICAL ASPECTS OF FULLERENE MATERIALS

(Fullerenes Group)

Original papers are solicited on all aspects of pharmaceutical, biological, biotechnology, and medical applications of fullerenes and functionalized fullerenes.

Organizer: S.R. Wilson, Department of Chemistry, New York University, 100 Washington Square East, New York, NY 10003-6688 USA, Phone: (212) 998-8461, Fax: (212) 260-7905, E-mail: steve.wilson@nyu.edu

O1--FIFTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION: CVD XV

(High Temperature Materials/Dielectric Science and Technology/Electronics/American Ceramic Society)

This symposium extends the tradition of international conferences on the topic of chemical vapor deposition and is intended to focus on, but is not limited to, papers covering the topics listed below. In addition to these areas of general interest, we plan special "minisymposia" on current "hot" areas. To this end, we are especially encouraging submission of papers in the areas of quantum dots, nanodeposits and nanostructures, low-K dielectrics, III-V compounds, ferroelectrics, and process control based on in-situ chemical analysis.

Papers are solicited on the following topics: 1) Fundamental Principles and Measurements: gas-phase and surface chemistry; thermochemistry; kinetics; mechanisms; mass and energy transport; fluid dynamics; precursor design/synthesis; 2) Modeling: Theory, and Experimental Verification: thermochemical, chemical-kinetic, mass transport, or coupled processes; nucleation and renucleation; growth; partial equilibrium; sequential, parallel, or mixed processes; combinatorial approaches; mismatch stresses; 3) Materials Types: optical materials; semiconductors; superconductors; insulators; metals; dielectrics; ferroelectrics; barrier layers; magnetic materials; nuclear materials; hard coatings; refractories; organic materials; thermal and environmental barrier coatings; multilayers; and solid lubricants; 4) Special Applications: single crystal growth; homo- and hetero-epitaxy; microstructural control; multiphase deposition; MOCVD; infiltration (CVI); area- or phase-selective deposition; quantum dots; and 5) Approaches: advanced in situ characterization for diagnostics and control; intelligent process control; unique activation methods (e.g., laser- and plasma-assisted deposition); chemical control (additives, alternative precursor delivery systems, selective CVD, interface design); atomic-layer epitaxy.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office. The paper should be concise and emphasize current results and conclusions.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to one of the Symposium Organizers: M.D. Allendorf, Sandia National Laboratories, MS 9052, Livermore, CA 94551-0969 USA, Phone: (925) 294-2895, Fax: (925) 294-2276, E-mail: mdallen@sandia.gov; T.M. Besmann, Oak Ridge National Laboratory, 1 Bethel Valley Road, P.O. Box 2008, Oak Ridge, TN 37831-6063, USA, Phone: (423) 574-6852, Fax: (423) 574- 6918, E-mail: tmb@ornl.gov; M.L. Hitchman, Department of Pure and Applied Chemistry, University of Strathelyde, 295 Cathedral St., Glasgow, G1 1XL, UK, Phone: 44-141-553-4189, Fax:44-141-548-4822, E-mail: m.l.hitchman@strath.ac.uk; M.D. Robinson, Lawrence Semiconductor Research Laboratory, 2300 West Huntington Drive, Tempe, AZ 85282 USA, Phone: (602) 438-2300, Fax: (602) 438-9591, E-mail: shimo@dpe.mm.t.u-tokyo.ac.jp; F. Teyssandier, ISGMP, CNRS-UPR8521, Universite, F-66860 Perpignan, Cedex, France, Phone: 33-4-68-66-21-01, Fax: 33-4-68-66-17-26. E-mail: fteyssa@univ-perp.fr; and R.K. Ulrich, High Density Electronics Center, 3202 Bell, University of Arkansas, Fayetteville, AR 72701 USA, Phone: (501) 575-5645, Fax: (501) 575-7926, E-mail: rku@engr.uark.edu

P1--INDUSTRIAL ELECTROLYSIS AND ELECTROCHEMICAL ENGINEERING GENERAL SESSION

(Industrial Electrolysis and Electrochemical Engineering)

This symposium will provide a forum to review recent progress in areas of industrial electrochemical engineering and processes not covered by other symposia at this Meeting. Papers are solicited from all areas and industries, including electrolysis, electrodeposition, electrochemical processing of wastes and other environmental applications, design operation, testing and modeling of industrial electrochemical systems. Presentations dealing with electrocatalysis, development of microelectrochemical systems and on such industrially significant areas as fluorine production, manufacture of aluminum and other metals are welcome. Also included are papers on the novel use of electrochemical methods in pulp and paper bleaching and generation of environmentally friendly bleaching chemicals. Contributed papers will be programmed in some related order, depending on the titles and content of abstracts.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizer: E. Kalu, Department of Chemical Engineering, FAMU- FSU College of Engineering, 2525 Pottsdamer Street, Tallahassee, FL 32310 USA, Phone: (850) 410-6327, Fax: (850) 410-6150, E-mail: ekalu@eng.fsu.edu

Q1--FIFTH INTERNATIONAL SYMPOSIUM ON ELECTROCHEMISTRY IN MINERAL AND METAL PROCESSING

(Industrial Electrolysis and Electrochemical Engineering/Energy Technology)

This is the fifth international symposium concerned with electrochemical aspects of concentrating and extracting base, precious and light metals from ores and associated energy and environmental considerations. The theme will parallel that of the previous symposia, held during the Spring Meetings of 1984 (Proc. Vol. 84-10), 1988 (Proc. Vol. 88-21), 1992 (Proc. Vol. 92-17) and 1996 (Proc. Vol. 96-6). Both fundamental and applied work will be covered with emphasis placed on recent progress in the following areas: 1. Mineral flotation - surface properties of sulfide minerals; electrochemical and thermodynamic aspects of mineral collector interactions and the action of modifying reagents; electrochemical properties of new collectors; redox conditions in grinding and effects on collector-mineral interactions; role of semi-conductor properties of sulfide reactions; application of electrochemical concepts to flotation practice; use of potential for monitoring and control of plotation plants; 2, hydrometallurgy - mechanisms kinetics and thermodynamics of sulfide dissolution reactions; process developments that minimize energy consumption; behavior of sulphides in mineral assemblages; maximizing recovery of precious metal values from base-metal sulfide ores; oxidation of sulfides to release precious metals values; 3, electrowinning and refining - mechanisms and kinetics of electrodissolution/electrodeposition reactions of base metals; electrowinning aluminum and magnesium; energy consumption and process efficiencies; influence of impurities; process control; fluidized- bed and spouted-bed electrodes; high intensity electrowinning; application of DSAs to electrowinning; 4, environmental technologies - flotation separation of pyrite from coal, removal of heavy metals and other environmentally sensitive species from liquid and gaseous waste streams; fundamental reactions leading to acid mine drainage and release of heavy metals.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: R. Woods, 9, Allambee Avenue, Camberwell, Vic 3124, Australia; F.M. Doyle, University of California, Department of Minerals Science & Mineral Engineering, 577 Evans Hall 1760, Berkeley, CA 94720 USA, Phone: (510) 642-2846, Fax: 510-643-5792, E-mail: fiona@garnet.berkeley.edu; and S. Licht, Department of Chemistry, Techion Israel Institute of Technology, Haifa 32000, Israel, Phone: 972-04-8922963, Fax: 972-04-8233735, E-mail: chrlicht@techunix.technion.ac.il

R1--ELECTROCHEMISTRY IN THE PREPARATION OF FLUORINE AND ITS COMPOUNDS

(Industrial Electrolysis and Electrochemical Engineering/Organic and Biological Electrochemistry)

The direct and indirect electrochemical preparation of the element and its compounds are the subjects of this symposium. Contributions are invited in the following areas: 1. The fundamental nature of electrode processes, practical aspects of the processes in the electrochemical cell, or processes that take place outside of the cell that are related to cell operation; 2. The preparation of the element, its handling, and its use; 3. The formation of carbon- fluorine bonds [these would include Simons Electrochemical Fluorination (ECF), Phillips (CAVE) ECCF, and anodic substitution (soft ECF)]; 4. The formation of bonds between fluorine and elements other than carbon (one example would be the preparation of nitrogen trifluoride); and 5. The electrochemical molecular conversion of organic fluorine compounds (examples would include the use of fluorine-containing reactants in Kolbe-type reactions, and electrochemical oxidation and reduction to prepare fluorine-containing compounds).

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: C.L. Gross, 3M Company, 3M Center, 236-3B-89 St. Paul, MN 55144-1000 USA, Phone: (651) 736-4379, Fax: (651) 736-0191, E-mail: clgross@mmm.com; and T. Fuchigami, Department of Electronic Chemistry, Tokyo Inst. Of Technology, Nagasuta, Midori-ku, Yokohama 227 Japan, Phone: 81-45-924-5406, Fax: 81-45-924-5489, E-mail: fuchi@echem.titech.ac.jp

S1--LUMINESCENCE AND DISPLAY MATERIALS GENERAL SESSION

(Luminescence and Display Materials)

The focus of this symposium will be on all aspects of the chemistry and physics of phosphors. Chemistry papers on phase relations, impurity effects and methods of preparation including fluxes and novel synthesis methods, sol-gel, etc., are welcomed. In the area of physics, papers on photoluminescent, electroluminescent and cathodoluminescent excitation, loss processes, energy transfer, site selection spectroscopy, up-conversion, luminescent in quantum wells, luminescence in amorphous materials, etc., are welcome.

We are also encouraging papers on phosphor coatings and screening techniques including topics, such as, reduction of screen defects, blue discoloration, cross contamination, etc., screening methods and models; optimum particle size distributions; and color uniformity in both screens and lamps. Also surface properties and treatments of phosphor particles to improve suspension characteristics, dispertion, or packing density are welcome.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: W.M. Yen, University of Georgia, Department of Physics, and Astronomy, Athens, GA 30602 USA, Phone: (706) 542-2491, Fax: (706) 542-2492, E-mail: wyen@hal.phusast.uga.edu; D.J. Lockwood, National Research Council, Institute for Microstructural Science, Ottawa, Ontario, Canada K1A OR6, Phone: (613) 993-9614, Fax: (613) 993-6486, E-mail: david.lockwood@nrd.ca; and C. Ronda, Philips Research Labs, Weibhausstrabe, 52066, Aachen, Germany, Phone: 49-241-6003-397, Fax: 49-241-6003-442, E-mail: ronda@pfa.research.philips.com

T1--FOURTH INTERNATIONAL MANUEL M. BAIZER AWARD SYMPOSIUM ON ORGANIC ELECTROCHEMISTRY IN HONOR OF J. SIMONET AND J.H.P. UTLEY

(Organic and Biological Electrochemistry)

This symposium will deal with all aspects of organic electrosynthesis. Contributed papers are solicited on topics including the general areas of anodic oxidations and cathodic reductions of organic and organometallic substrates, direct and indirect processes, mechanistic investigations, electrode materials, etc. Some submitted papers may be selected for a poster session because many papers are expected.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: A. Fry, Department of Chemistry, Wesleyan University, Middletown, CT 06459 USA, Phone: (860) 685-2622, Fax: (860) 685-2211, E-mail: afry@wesleyan.edu; Y. Matsumura, Institute for Fundamental Research of Organic Chemistry, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan, Phone: 92-642-2794, Fax: 95-843-2442, E-mail: matumura@net.nagasaki-u.ac.jp; and E. Steckhan, Kekule- Institute fuer Organische Chemie und Biochemie der Universitaet Bonn, Gerhard-Domagk-Str. 1, D-53121 Bonn, Germany, Phone: 49-228-732653, Fax: 49-228-739608, E-mail: steckhan@uni-bonn.de

T2--ORGANIC AND BIOLOGICAL ELECTROCHEMISTRY GENERAL SESSION

(Organic and Biological Electrochemistry)

Papers concerning any aspect of organic and biological electrochemistry not covered by topic areas of other specialized symposia at this Meeting are welcome. Contributed papers will be programmed in some related order depending on the titles and contents of the Meeting Abstracts.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizer: K. Niki, Department of Chemistry, Illinois State University, Normal, IL 61790-4160, USA, Phone: (309) 438-3506, Fax: (309) 438-5538, E-mail: kniki@xenon.che.ilstu.edu

U1--SCALE-UP IN ORGANIC AND PHARMACEUTICAL ELECTROSYNTHESIS

(Organic and Biological Electrochemistry/Industrial Electrolysis and Electrochemical Engineering)

In order to increase acceptance of organic electrosynthesis in the wider chemical community, it is essential that to promote studies involved with scale-up and with applications such as electrosynthesis of specialty organics and pharmaceuticals. Papers are invited on all aspects of electroorganic synthesis at the laboratory, pilot and production scale, including both direct and mediated reactions, mechanistic studies, cell reaction design, new electrode materials and/or electrolytic media, solvent/supporting electrolyte recycling, and overall process economics.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: D. J. Mazur, The Electrosynthesis Company, Inc., 72 Ward Road, Lancaster, NY 14086 USA, Phone: 716-684-0513, Fax 716-684-0511, E-mail: mazurdjm@electrosynthesis.com; I. Nishiguchi, Department of Chemistry, Nagaoka University of Technology, 1603-1, Kamitomioka-cho, Nagaoka, Niigata 940- 2188, Japan, Phone: 81-258-47-9307, Fax: 81-258-47-9300, E-mail: nishiiku@vos.nagaokaut.ac.jp; P.N. Pintauro, Department of Chemical Engineering, Tulane University, New Orleans, LA 70118 USA, Phone:(504) 865-5872, Fax: (504) 865-6744, E-mail: peter.pintauro@tulane.edu; and P. Tatapudi, Dupont Central Research and Development, 304/A210, Wilmington, DE 19880-0304 USA, Phone: 302-695-9640, Fax: 302-695-3501, E-mail: pallav.tatapudi@usa.dupont.com

V1--ELECTROCHEMICAL DOUBLE LAYER STRUCTURE: UHV AND EMMERSED ELECTRODES

(Physical Electrochemistry)

The objective of this symposium is to provide a forum for the discussion of the continuously evolving roles played by ultraviolet vacuum-based surface analytical techniques in studies of electrode-solution interfaces. A variety of analytical techniques have been developed over the last few decades that are compatible with the liquid-solid interface. Nonetheless, significant limitations still remain in our ability to probe and study this environment in situ. Notorious is our inability to perform direct elemental composition analysis. We also continue to struggle with the inability to probe solvent molecules in the vicinity of smooth, well-ordered surfaces. Consequently, strategies utilizing UHV-based diffraction and spectroscopic techniques continue to play pivotal roles in studies of the electrochemical interfaces.

Papers are solicited in topics that relate to the use of UHV-based techniques to the study of electrochemical systems. Some specific examples include, but are not limited to, the use of emmersed electrode tactics as a means to obtain information that is not accessible in situ; discussions addressing the nature of the measurement of adsorption energies; discussions of issues regarding the process of electrode emersion and transfer to UHV-including interface desolvation and modification of adsorbate and adsorbate-surface interactions; the use of immersed electrode tactics in electrodeposition studies; low-temperature double layer modeling in UHV as a means to obtain information about solvation interactions at solid surfaces including the roles played by the surface in the solvation of adsorbed species; the use of vibrational spectroscopy in UHV to probe solvent molecules adjacent to the electrode surface; and the use of double layer modeling tactics to study surface-adsorbate and adsorbate-adsorbate interactions in a sequential fashion.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: I. Villegas, Department of Chemistry, The University of New Mexico, Clark Hall 103, Albuquerque, NM 87131-1096 USA, Phone: (505) 277-5328, Fax: (505) 277-2609, E-mail: villegas@unm.edu; and M.P. Soriaga, Department of Chemistry, Texas A&M University, College Station, TX 77843 USA, Phone: (409) 845-1846, Fax: (409) 845-3523, E-mail: soriaga@mail.chem.tamu.edu

V2--HYDROGEN AT SURFACES AND INTERFACES

(Physical Electrochemistry)

The symposium focuses on contemporary developments in electrochemical surface science of hydrogen adsorption on metal, metal-alloy, and intermetallic surfaces in relation to Faradaic electrode processes and hydrogen interfacial transfer. Special emphasis is given to the following topics: (i) thermodynamics and kinetics of H adsorption on single-crystal and polycrystalline electrodes; (ii) co-adsorption of H with molecular and anionic species; (iii) the interfacial dualism of site blocking species (SBS) in H adsorption, H2 evolution reaction, and H adsorption; (iv) mechanistic and kinetic aspects of H interfacial transfer into metallic hosts; (v) kinetics and mechanisms of the cathodic H2 evolution reaction; (vi) metal hydrides as rechargeable anodes; (vii) intermetallics for H storage; (viii) hydrogen storage in nanotubes; (ix) hydrogen embrittlement; (x) selective electrohydrogenation of organic compounds; (xi) oscillatory behavior related to H adsorption into metals, alloys and intermetallics.

The Symposium includes invited and contributed papers.

Publication of a hard cover Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office. The organizers will examine the scientific contents and the format of the manuscripts submitted for publication in order to ensure a high profile of the envisaged publication.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: G. Jerkiewicz, Departement de Chimie, Universite de Sherbrooke, 2500, boul, Universite, Sherbrooke, Quebec, J1K 2R1 Canada, Phone: (819) 821- 7085, Fax: (819) 821-8017, E-mail: gregory.jerkiewicz@courrier.usherb.ca; J.M. Feliu, Departamento de Quimica Fisica, Universidad de Alicante, Ap. Correos 99, Alicante, Spain, Phone: 34-65909301, Fax: 34-65903537, E-mail: juan.feliu@ua.ed; and B.N. Popov, Department of Chemical Engineering, University of South Carolina, 2633 Swearingen Engineering Center, Columbia, SC 29208 USA, Phone: (803) 777-7314, Fax: 803-777-8265, E-mail: popov@engr.sc.edu

V3--ORGANIC MONOLAYERS AT ELECTRODES

(Physical Electrochemistry)

This symposium provides a forum for presentation of new results on electrochemistry of thin organic films at electrode surfaces in the context of the recent developments in surface science and bioelectrochemistry. It provides an opportunity for interdisciplinary exchange between researchers in electrochemistry, surface science, materials science and bioelectrochemistry. Specific areas of interest (session topics) include: 1) adsorption of organic molecules at electrode surfaces, 2) characterization of adsorbed organic films by spectroscopic, diffraction and imaging techniques, 3) kinetics of adsorption and phase transitions in organic monolayers, 4) Langmuir-Blodgett films and supported bilayers at electrode surfaces, 5) self-assembled monolayers for molecular recognition devices.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: V. Birss, Department of Chemistry, University of Calgary, Calgary, Alberta, Canada, T2N I4N, Phone: (403) 220-6432, Fax: (403) 289-9488, E-mail: birss@ucalgary.ca; D. Bizzotto, Department of Chemistry, University, University of British Columbia, Vancouver, British Columbia, Canada, V6T 1Z1, Phone: (604) 822-6816, Fax: (604) 822-2847, E-mail: bizzotto@chem.ubc.ca; J. Lipkowski, Department of Chemistry and Biochemistry, University of Guelph, Guelph, Ontario, Canada N1G 2W1, Phone: (519) 824-4120 ex. 8543, Fax: (519) 766-1499, E-mail: lipowski@chembio.uoguelph.ca; and S. Roscoe, Department of Chemistry, Acadia University, Wolfville, Nova Scotia, Canada, B0P 1X0, Phone: (902) 585-1156, Fax: (902) 585-1114, E-mail: sharon.roscoe@acadiau.ca

V4--PHYSICAL ELECTROCHEMISTRY GENERAL SESSION

(Physical Electrochemistry)

Papers concerning any aspect of physical electrochemistry not covered by topic areas of other specialized symposia at this Meeting are welcome. Contributed papers will be programmed in some related order, depending on the titles and content of the Meeting Abstracts.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Session Organizer: J. Leddy, University of Iowa, Department of Chemistry, Iowa City, IA 52242 USA, Phone: (319) 335-1720, Fax: (319) 335-1270, E-mail: jleddy@blue.weeg.uiowa.edu

W1--ELECTROCHEMISTRY OF NOVEL ELECTRODE MATERIALS

(Physical Electrochemistry/Energy Technology)

This symposium will cover a wide range of studies on the electrochemical properties and applications of novel electrode materials. This emphasis will be put on electrode materials without restriction on their specific electrochemical response. This symposium will include studies of (I) new electrode materials, (ii) electrode materials already known but prepared by new, non-common processes, (iii) electrode materials already known but used in non-traditional areas of electrochemistry, and (iv) applications of all of these materials in electrochemistry. Papers dealing with all outstanding aspects of electrochemistry of novel electrode materials will be accepted, including description of preparation procedures, characterization of the electrode materials, and studies of their electrochemical proprieties and responses. Ideally, a contribution could cover all the aspects listed above.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: A. Lasia, Department de chimie, Universite de Sherbrooke, Sherbrooke, P.Q., J1K 2R1, Canada, Phone: (819) 821-7097, Fax: (819) 821-8017, E-mail: alasia@courrier.usherb.ca; D. Guay, INRS-Energie et materiaux, 1650 Blvd. Lionel-Boulet, C.P. 1020, Varennes, P.Q., J3X 1S2, Canada, Phone: (450) 929-8141, Fax: (450) 929-8102, E-mail: srini@princeton.edu

X1--ADVANCES IN SENSORS FOR DIABETES MONITORING

(Sensor)

The world is facing an epidemic of diabetes with a projected 220 million diabetics worldwide by 2010. Current technology for the management of diabetes consists of glucose sensors that provide discrete measurements using whole blood obtained from a painful finger stick. The theme of this symposium will be advances in sensor technology intended to improve upon the current methods of diabetes monitoring. The symposium will cover sensors that come in direct contact with a body fluid and is not intended to cover the optical approaches to non-invasive glucose testing. The goal of the symposium is to build a better understanding of the fundamentals of how sensors operate so better sensors can be developed to improve the diabetic's life.

Papers are encouraged that address the following fundamental areas of interest in diabetes monitoring: stability of the sensor in contact with a body fluid, understanding and eliminating sensor drift, understanding the differences between in-vivo and ex-vivo calibration, elimination of interferences, biocompatibility of the sensor, miniaturization, sterilization. The area of continuous glucose sensing, both in-vivo and ex-vivo, is strongly encouraged as this may lead to a closed loop control system. Sensors for analytes other than glucose are encouraged as long as they apply to diabetes monitoring.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

In the event of a large number of papers, some papers may be presented in a poster session.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: T. Henning, Abbott Laboratories, D-9NL/AP20, 100 Abbott Park Road, Abbott Park, Illinois 60064-6015 USA, Phone: (847) 937-3527, Fax: (847) 938-7072, E-mail: timothy.henning@add.ssw.abbott.com; D. Cunningham, Abbott Laboratories, D-9NL/AP20, 100 Abbott Park Road, Abbott Park, Illinois 60064-6015 USA, Phone: (847) 938-6577, Fax: (847) 938-7072, E-mail: david.cunningham@abbott.com; and G. Jobst, Albert-Ludwigs-Universitaet Freiburg, Dept. Microsystem Technology, Am Flugplatz 79, D-79085 Freiburg, Germany, Phone: (+49 761) 203-8014, Fax: (+49 761) 203-8012, E-Mail: jobst@informatik.uni-freiburg.de

X2--POLYMER MANUFACTURING PROCESS SENSORS II

(Sensor)

Polymer manufacturers rely increasingly on real-time data to control processes. Parameters that could previously be acquired only by sampling and off-line analysis can now be directly measured in real-time using process sensors. The benefits of such real-time monitoring include tighter process control, more consistent quality, higher productivity, and waste minimization. Measurements increase understanding of processes and provide the experimental basis for process model development. This symposium will focus on the application of sensors to the real-time measurement of polymer process parameters. Sensors may utilize any of a number of sensing mechanisms including (but not restricted to) rheology, ultrasonic or acoustic transduction, dielectric or impedance spectroscopy, eddy current, electrochemistry, optical spectroscopy or light scattering, interactions with MOS devices, and chemical or biochemical reactions. Sensors can be applied in-line, on-line, or at-line. Such sensors are used to quantify: 1. physical properties such as temperature, pressure and molecular mass; 2. rheological properties such as strain rate and viscosity; 3. optical properties such as turbidity and color; and 4. chemical properties such as polymer composition, copolymer constituency, trace contaminant levels and solution pH. Application can be anywhere in the polymer manufacturing process, from monomer synthesis and polymerization, to extrusion, injection molding, and final product testing.

Publication of a Proceedings Volume is planned after the Meeting. Acceptance of a paper in this symposium (oral or poster) obligates the authors to submit a typed camera ready copy of the full proceedings volume manuscript and list of key words at the Meeting. Instructions for preparing the manuscript will be sent out by the Symposium Organizers after the official notification of acceptance is distributed by the ECS Headquarters Office.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: E.B. Stokes, General Electric Corporate Research and Development, One Research Circle, Building K1, Room 3B31, Schenectady, NY 12309 USA, Phone: (518) 387-7529, Fax: (518) 387-5604, E-mail: ebstokes@crd.ge.com; D.E. Kranbuehl, Department of Chemistry, College of William and Mary, P.O. Box 8795, Williamsburg, VA 23187 USA, Phone: (757) 221-2542, Fax: (757) 221-2715, E-mail: dekran@facstaff.wm.edu; and A.J. Bur, Polymers Division, NIST, 100 Bureau Drive, Stop 8542, Gaithersburg, MD 20899-8542 USA, Phone: (301) 975-6748, Fax: (301) 975-4924, E-mail: abur@nist.gov

Y1--SENSORS FOR ENERGY TECHNOLOGY

(Sensor/Energy Technology)

Electrochemistry makes significant contributions to advance chemical sensor technology in amperometric, potentiometric, and conductimetric as well as the solid state and biosensor area. This symposium will explore the sensor requirements of energy technologies in applications ranging from process control to protection of human health and the environment. Typical papers should discuss a relevant chemical sensor research and/or development effort that could include advances in materials for sensing, methods of utilization of sensors, or new "micro/nano" geometries for chemical sensors. In recognition of the breadth of applications within energy technologies and the breadth of chemical sensor approaches, this symposium will seek to promote a session that is both interdisciplinary and interprofessional. Researchers with a broad interest in either the energy technology as well as the chemical sensor science are encouraged to submit papers and attend these sessions.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: J. R. Stetter, Illinois Institute of Technology, BCPS Department, Chicago, IL 60616 USA, Phone: (312) 567 3443, fax 312 567 3494, E-mail: stetter@charlie.cns.iit.edu; E. Logothetis, Ford Motor Company, MD 3028, P.O. Box 2053, Dearborn, MI 48123 USA, Phone: (313) 323-8553, Fax: (313) 323-7044, E-mail: elogothe@ford.com; and T. Zawodinski, Los Alamos National Laboratory, MS 0429, P.O. Box 1663, Los Alamos, NM 87544-0600 USA, Phone: (505) 667-0925, Fax: (505) 665-4292.

Z1--ELECTROCHEMICAL IMPEDANCE FOR ANALYSIS OF CHEMICAL AND ELECTROCHEMICAL PROCESSES AND MECHANISMS

(Sensor/Physical Electrochemistry)

The purpose of this Symposium is to bring together experts with a variety of different experimental and theoretical skills. The aim is to show the power of Electrochemical Impedance Spectroscopy for understanding electrochemical systems: characterizing homogeneous or inhomogeneous materials by their charge transport and dielectric properties, recognizing effects and signatures of surface layers, space charge regions, spontaneously occurring corrosion reactions and products, the occurrence and rates of generation and destruction of charge carriers on the bulk or on surfaces.

The materials of this field are general. Papers could consider liquid phases, solid electrolytes, conventional semiconductors and biological materials occurring as single phases, on surfaces, or in macroscopic or microscopic mixtures.

Abstracts, suggestions, and inquiries should be sent electronically to the ECS Headquarters Office and to the Symposium Organizers: R.P. Buck, Department of Chemistry, UNC-CH Chapel Hill, NC 27599-3200 USA, Phone: (919) 962-2304, Fax (919) 962-2388 (Spring semester only); P.J. Hesketh, EECS Department M/C 154, University of Illinois at Chicago, 851 South Morgan Street, Chicago, IL 60607 USA, Phone: (312) 413-7574, Fax: (312) 413- 0024, E-mail: peter@eecs.uic.edu; and P. Vanysek, Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb, IL 60115 USA, Phone: (815) 753-6876, Fax: (815) 753-4802; E-mail: pvanysek@niu.edu