207th ECS Meeting - Quebec City, Canada

May 15 - May 20, 2005

PROGRAM INFORMATION
 

F1 - Electrochemical Processing in ULSI Fabrication and Electrodeposition of and on Semiconductors VI

Electrodeposition/Dielectric Science and Technology/Electronics and Photonics/High Temperature Materials
 

Tuesday, May 17, 2005

Room 302B, Level 3, Quebec City Convention Center

Copper Electrodeposition I

Co-Chairs: J. Stickney & L. Deligianni
TimeAbs#Title and Authors
14:00 325 Direct Copper Electrodeposition on Ruthenium Barrier L. Deligianni (IBM TJ Watson Research Center), P. Vereecken (IBM), F. Xue (University of Illinois), S. Malhotra (IBM), X. Shao (IBM TJ Watson Research Center), A. Radisic (Johns Hopkins University) and F. Ross (IBM)
14:30 326 Electrodeposition of Cu on Ru Barrier Layers for Damascene Processing T. Moffat, M. Walker, L. Richter and D. Josell (NIST)
15:00 327 Electrodeposition of Cu on Ru and Ru Oxide Ultra-thin Films and its Application to Cu Interconnects O. Chyan, T. Arunagiri, Y. Zhang, O. Ojeda, S. Flores and P. Nalla (University of North Texas)
15:30 328 Copper Metallization Needs for Wafer-Level, Three-Dimensional Integration R. Gutmann, J. Lu, J. Yu (Rensselaer Polytechnic Institute), K. Chen and R. Reif (Massachusetts Institute of Technology)
16:00 Intermission (20 Minutes)
16:20 329 Electrochemical Processing for On-Chip Interconnects V. Dubin (Intel Corporation)
16:50 330 Room Temperature Resistance Transient of Electrodeposited Copper X. Shao (IBM TJ Watson Research Center), P. Vereecken, B. Baker (IBM), L. Deligianni (IBM TJ Watson Research Center), R. Henry, K. Kwietniak, C. Parks and S. Seo (IBM)
17:10 331 Copper Electrodeposition on Thin-Seed Substrates H. Hafezi, A. Rosenfeld, S. Singh, J. Dukovic and M. Birang (Applied Materials, Inc)
17:30 332 In-situ Electrochemical Sensor for Early Fault Detection in Copper Damascene Plating Process A. Jaworski, K. Wikiel (Technic, Inc.) and R. Carpio (Sematech)
 

Room 200A/200B/200C, Level 2, Quebec City Convention Center

Tuesday Evening Poster Session

Co-Chairs: J. Stickney & A. Kolics
TimeAbs#Title and Authors
o 333 Effect of Ultrasonic Field on the Properties of Sonoelectrochemically Deposited CdSe Films M. Murali (CECRI) and P. Kumaresan (Saranathan Engg College)
o 334 Properties of CdTe Films Brush Plated on High Temperature Substrates M. Murali (CECRI) and B. Jayasutha (JJ College of Engineering)
o 335 Pulse Electrodeposition of ZnTe Films M. Murali (CECRI) and C. Ravidass (Bishop Heber College)
o 336 Luminescence Properties of Pulse Plated Nanocrystalline CdSe Films M. Murali and D. Trivedi (CECRI)
o 337 Preparation of GaAs Films by Periodic Pulse Technique M. Murali (CECRI)
o 338 Electroless Deposition of Nano-Sized Films for Fabrication of Photomasks, ULSI, Piezodevices T. Khoperia (Intitute of Physics), L. Maisurdze, M. Berberashvili and V. Chikhradze (Institute of Physics)
o 339 Electrochemical Scanning Tunneling Microscopy Study of Cu-Modified Au(111) Electrodes in NaOH Solution D. Friebel (UniversitBonn), C. Schlaup (Universit䴠Bonn), P. Broekmann (University Bonn) and K. Wandelt (Universit䴠Bonn)
o 340 Aluminum Dual Damascene Process for the Fabrication of Sub-100 nm Memory Devices C. Kim (Ajou University), H. Ryu (LG Chem, Ltd), Y. Kim (Hynix Semiconductor) and C. Shin (Ajou University)
o 341 Growth and Characterization of CuInSe2 by Electrodeposition and Solar Cell Applications K. Soon Hyung, K. Yu-Kyung, C. Don Soo and S. Yung-Eun (Seoul National university)
o 342 In Situ STM Study of an Ultrathin Copper Sulfide Film on Au(111) in Alkaline Solution D. Friebel (UniversitBonn), C. Schlaup (Universit䴠Bonn), P. Broekmann (University Bonn) and K. Wandelt (Universit䴠Bonn)
o 343 Determining the Role of W in Suppressing Crystallization of Electroless Ni-W-P Films S. Antonelli, T. Allen and D. Johnson (University of Oregon)
o 344 High Density Plasma Enhanced Atomic Layer Deposition of Lanthanum Oxide for High-k Gate Oxide Material M. Ko, E. Lee and J. Park (Hanyang University)
o 345 Electrochemical Potentiodynamic Polarization Effects of Mixed Oxidizer on W-CMP Y. Seo (Daebul University) and W. Lee (Chosun University)
o 346 Substrate-dependent Copper Electroless Deposition Y. Kim, H. Kim, J. Cho, H. Seo, G. Kim, H. Shin (Chonbuk National University), J. Senkevich (Brewer Science), G. Ten Eyck and T. Lu (Rensselaer Polytechnic Institute)
 

Wednesday, May 18, 2005

Room 302B, Level 3

Copper Electrodeposition II

Co-Chairs: A. Kolics & A. Chyan
TimeAbs#Title and Authors
10:00 347 PVD vs. ECD Copper Diffusion and Interfacial Stability Studies Across a 5 nm Ruthenium Film Deposited on Silicon T. Arunagiri, Y. Zhang and O. Chyan (University of North Texas)
10:20 348 Interface Evolution of Epoxy Layers Due to Wet-Chemical Treatments and its Relevance to Adhesion of Electrochemically Deposited Copper S. Siau, A. Vervaet, E. Schacht and A. Van Calster (University Gent)
10:40 349 Monitoring of Additives in Copper Plating Bath by Cyclic Voltammetric Stripping with a Microelectrode J. Sun, B. Xie, X. Xie and G. Chen (Fuzhou University)
11:00 350 Interfacial Characterization of Electrodeposited Cu on 5-10 nm Ru Films Supported by Low-k Dielectrics P. Nalla, A. Tiruchirapalli N, O. Chyan (University of North Texas) and T. Hurd (Silicon Technology Research)
11:20 351 New Organic Additives for 65 NM Technology Node Copper Interconnects K. Hong, I. Shin, J. Lee, J. Lee, K. Yee (Chungnam National University), M. Lee, S. Pyo and S. Kim (MagnaChip Semiconductor)
11:40 352 Seedless Copper Electrochemical Deposition on Ultra-Thin Air Exposed TaN and Ru Barrier Layers N. Lay (Rensselaer Polytechnic Institute) and D. Duquette (RPI)
12:00 353 Study of Internal Stress and Crystal size of Electroplated Sn-Cu alloy Films H. Sasaki, K. Katou, M. Saito, Y. Wada and T. Homma (Waseda University)
 

Room 302B, Level 3, Quebec City Convention Center

CU III/Leveling

Co-Chairs: A. Kolics & A. West
TimeAbs#Title and Authors
14:00 354 Degradation Study of a Copper Electroplating Bath By Electrochemical Impedance Spectroscopy H. Chen, S. Parulekar (Illinois Institute of Technology) and A. Zdunek (American Air Liquide)
14:20 355 Plasma Etch Process for Multilayer Copper Interconnect Vias Having an Organic Layer with Vertical Sidewalls D. Weston, W. Dauksher and N. Le (Motorola Inc.)
14:40 356 Practical and Theoretical Aspects of the Electrochemical Planarization of Copper A. West (Columbia University), E. Cooper, X. Shao and L. Deligianni (IBM TJ Watson Research Center)
15:10 357 Unifying Understanding of Leveling: Control of Submicrometer Overfill Bumping to Macroscopic Scratch Filling D. Josell, T. Moffat and D. Wheeler (NIST)
15:30 Intermission (40 Minutes)
16:10 358 Development of Ru CMP Slurry and its Application to the Node Separation of RIR Capacitor S. Yun, J. Lee (Samsung Electronics Co., LTD.), K. Orui, H. Nojo (DuPont AirProducts NanoMaterials K.K.), B. Yoon, C. Hong, H. Cho (Samsung Electronics Co., LTD.) and J. Moon (Samsung Electronics)
16:30 359 Investigation of Parameters Influencing Planarization Efficiency in Electrochemical Mechanical Deposition of Copper B. Basol, C. Uzoh (ASM NuTool Inc.) and T. Wang (ASM NuTool)
16:50 Intermission (20 Minutes)
17:10 360 Differential Scanning Calorimetry Study of Electrodeposited Copper Metallization S. Ahmed, S. Nakahara and D. Buckley (University of Limerick)
17:30 361 Development of New Chemistry and Process Tool for the Selective Capping of Copper with CoWP T. Weidman (Applied Materials, Inc.), Z. Zhu, H. Fang, F. Mei, Y. Wang, A. Shanmugasundram, B. Kapoor, K. Wijekoon (Applied Materials), D. Lubomirsky (Applied Materials.) and I. Pancham (Applied Materials)
17:50 362 Initial Stages of Electroless Cap Formation on Copper Interconnects A. Kolics, M. Polyanskaya and I. Ivanov (Blue29)
 

Thursday, May 19, 2005

Room 302B, Level 3, Quebec City Convention Center

Semiconductors

Co-Chairs: J. Feliu & F. Endres
TimeAbs#Title and Authors
08:00 363 Atomic-Scale Observation on the Nucleation and Growth Mechanisms of Displacement-Activated Palladium Catalysts and Electroless Copper Plating S. Lin, C. Lai, I. Song (National Tsing Hua University) and S. Chang (National Chung Hsing University)
08:20 364 Electrochemical Processing for Cu and Ni Nanowire Arrays M. Motoyama, Y. Fukunaka, T. Sakka and Y. Ogata (Kyoto University)
08:40 365 Microstructural Evolution of LIGA Ni-Electrodeposits N. Yang (Sandia National Labs), J. Kelly (Sandia Natl Labs) and T. Headley (Sandia National labs)
09:00 366 Gold Plating Using Hydantoin Complexes Y. Ohtani, K. Sugawara, K. Nemoto, A. Shiozawa, S. Saito, A. Yamaguchi, K. Oyaizu and M. Yuasa (Tokyo University of Science)
09:20 367 Electrodeposition of Gold Particles on Aluminum Substrates Containing Copper T. Olson (University ofNew Mexico), D. Brevnov and P. Atanassov (University of New Mexico)
09:40 368 Cathodic Electrophoresis of Ceramic Nano-particle Mn-Zn Iron Oxide C. Washburn (Sandia National Laboratories), S. Kurinec (Rochester Institute of Technology) and J. Jorne (University of Rochester)
10:00 369 Investigation of Distribution of Phosphorus in Electroless Ni(P) Films K. Semkow, L. Wiggins, P. Flaitz and C. Goldsmith (IBM)
10:20 370 Electrochemical Impedance Study on n-type Si(100) in Hydrofluoric Acid C. Lai, J. Lin, W. Jehng and S. Lee (National Central University)
10:40 371 Electrodeposition of Nanoscale Silicon in an Ionic Liquid F. Endres (Clausthal University of Technology)
11:10 372 Electrochemical Behavior of Thallium Underpotential Deposition on Pt (111) and Stepped Surfaces. Applications in the Study of Superficial Structure of Nanoparticles J. Feliu, P. Rodriguezez, E. Herrero, J. Solla, F. Vidal and A. Aldaz (University of Alicante)
11:40 373 Two Dimensional Compound Formation of a Cu Submonolayer with S on Au(111) in Alkaline Solution an In Situ STM Study D. Friebel (UniversitBonn), C. Schlaup (Universit䴠Bonn), P. Broekmann (University Bonn) and K. Wandelt (Universit䴠Bonn)
12:00 374 Photodefinable Metal Deposition on Amorphous TiO2 Layer K. Song, C. Noh, J. Kim, S. Cho, T. Byk, O. Hwang (samsung advanced institute of technology) and H. Lee (Samsung Coring)
12:20 375 Photo-Electrochemical Corrosion on the n-type (100) Silicon Single Crystal J. Lin, C. Tsai, W. Jehng, C. Lai and S. Lee (National Central University)