207th ECS Meeting - Quebec City, Canada

May 15 - May 20, 2005

PROGRAM INFORMATION
 

J1 - Eighth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications

Electronics and Photonics
 

Monday, May 16, 2005

Room 301B, Level 3, Quebec City Convention Center

Applications of Bonded SOI Substrates

Co-Chairs: K. Hobart & H. Baumgart
TimeAbs#Title and Authors
10:00 476 High Performance SOI Device Options S. Huang (IBM)
10:40 477 Applications of Bonding SOI Technology to High Performance LSI Circuits M. Yoshimi (SOITEC Asia, Inc.), C. Mazure and I. Cayrefourcq (SOITEC)
11:20 478 Device Applications Using Bonded SOI Wafers S. Fujino, H. Himi, T. Fukada and H. Yamaguchi (DENSO CORPORATION)
 

Advanced Bonding and Transfer Techniques

Co-Chairs: S. Fujino & F. Letertre
TimeAbs#Title and Authors
14:00 479 Surface Plasma Activation Before Direct Wafer Bonding : A Short Review and Recent Results H. Moriceau (CEA/Leti), F. Rieutord, C. Morales, S. Sartori (cea) and A. Charvet (CEA/Leti DIHS/LTFC)
14:40 480 Capabilities of an Ambient Pressure Plasma for Activation in LT Wafer Bonding Processes M. Gabriel, S. Hansen (Suss MicroTec AG) and V. Cetin (Suss MicroTec)
15:00 481 Plasma Bonding Replacement Methods for Traditional Bond Technologies S. Farrens, V. Dragoi, R. Pelzer (EV Group) and M. Wimplinger (EV Group Inc.)
15:20 Intermission (20 Minutes)
15:40 482 Direct Wafer Bonding & Thinning Down : A Generic Technology to Perform New Structures B. Aspar, C. Lagahe-Blanchard (TRACIT) and H. Moriceau (CEA/Leti)
16:20 483 200 mm Germanium-On-Insulator (GeOI) Structures Realized from Epitaxial Wafers Using the Smart Cut(TM) Technology C. Deguet (CEA LETI), J. Dechamp, C. Morales (cea), A. Charvet (CEA/Leti DIHS/LTFC), L. Clavelier (LETI), V. Loup, J. Hartmann (CEA Grenoble), N. Kernevez (CEA), Y. Campidelli (STMicroelectronics), F. Allibert, C. Richtarch, T. Akatsu and F. Letertre (SOITEC)
16:40 484 Wafer Bonding and Layer Transfer Approach for Strained Silicon-On-Insulator (sSOI) Fabrication R. Singh, I. Radu, M. Reiche, U. Gosele, S. Christiansen (Max Planck Institute of Microstructures Physics) and D. Webb (ATMI Epitaxial Services)
17:00 485 Layer Transfer and Characterization of SOI and GeOI Substrates Z. Liu, V. Loryuenyong, N. Cheung (UCBerkeley), B. Schmidt, P. Chen and S. Lau (UCSD)
 

Tuesday, May 17, 2005

Room 301B, Level 3, Quebec City Convention Center

Alternative and Engineered Substrate Bonding

Co-Chairs: B. Aspar & M. Yoshimi
TimeAbs#Title and Authors
09:00 486 Recent Progress on Engineered Substrates for GaN Applications B. Faure, F. Letertre (SOITEC), H. Larheche (Picogiga International), S. Bressot (Soitec), D. Da Cruz (Picogiga International), A. Boussagol (Soitec) and P. Bove (Picogiga International)
09:40 Intermission (20 Minutes)
10:00 487 Transfer of Two-inch GaN Film by the Smart CutTM Technology A. Tauzin (CEA - LETI), T. Akatsu (SOITEC), M. Rabarot (CEA - LETI), J. Dechamp, M. Zussy (CEA), H. Moriceau (CEA/Leti), J. Michaud (CEA - LETI), A. Charvet (CEA/Leti DIHS/LTFC), L. Di Cioccio, F. Fournel (CEA - LETI), J. Garrione, F. Letertre, B. Faure (SOITEC) and N. Kernevez (CEA)
10:20 488 Low Temperature Integration of CdZnTe(211)B/Si(100) by Wafer Bonding J. Huang (The University of Texas at Dallas), M. Kim and D. Cha (The University of Texas at Dallas,Richardson,TX 75083)
10:40 489 The Effects of Implantation Heating on the Exfoliation of InP S. Hayashi (University of California, Los Angeles), R. Sandhu (Northrop Grumman), D. Bruno and M. Goorsky (UCLA)
11:00 490 GaN Based Light Emitting Diodes for Vertical Electrodes by Laser Lift-Off and Wafer Bonding K. Pan, C. Lee and C. Yang (National Chung Hsing University)
11:20 491 AlGaN/GaN Heterostructure Field Effect Transistors Fabricated on 100MM Si/POLY SiC Composite Substrates J. Roberts, P. Rajagopal, J. Cook, R. Therrien, E. Piner, K. Linthicum (Nitronex Corporation), K. Hobart, M. Twigg, J. Mittereder and S. Binari (Naval Research Laboratory)
11:40 492 White LEDs Fabricated by Photon Recycling Y. Su (National Chung Hsing University), R. Horng (National Chung Xing University) and C. Lee (National Chung Hsing University)
 

Wafer Bonding for MEMS Applications

Co-Chairs: J. Bagdahn & S.M. Spearing
TimeAbs#Title and Authors
14:00 493 Wafer bonding for MEMS P. Enoksson (Chalmers University of Technology)
14:40 494 Wafer Scale Packaging of MEMS by Using Plasma Activated Wafer Bonding T. Suni (VTT), K. Henttinen, A. Lipsanen, J. Dekker, H. Luoto and M. Kulawski (VTT Information Technology)
15:00 495 Wafer Bonding for Optical MEMS M. Reiche (Max Planck Institute of Microstructures Physics), T. Bakke, B. Voelker, H. Schenk (Fraunhofer-Institut für Photonoische Mikrosysteme) and I. Radu (Max Planck Institute of Microstructures Physics)
15:20 496 Direct Bonding of Thick Film Polysilicon to Glass Substrates H. Luoto (VTT Information Technology), T. Suni (VTT), K. Henttinen and M. Kulawski (VTT Information Technology)
15:40 Intermission (20 Minutes)
16:00 497 Low- and High- Temperature Silicon Wafer Direct Bonding for Micro- Machined Absolute Pressure Sensors R. Knechtel, G. Dahlmann and U. Schwarz (X-FAB Semiconductor Foundries AG)
16:20 498 SOI Wafers with Buried Cavities K. Henttinen (VTT Information Technology), T. Suni (VTT), J. Dekker, H. Luoto, M. Kulawski (VTT Information Technology), J. Makinen (Okmetic Oyj.) and R. Mutikainen (VTI Technologies Oy)
16:40 499 Si-based Condenser Microphone by Wafer Bonding Technique R. Horng, K. Hu and C. Hsu (National Chung Xing University)
17:00 500 In-Line Critical Leak Rate Testing of Vacuum-Sealed and Backfilled Resonating MEMS Devices W. Reinert, P. Metz, M. Oldsen and D. Kahler (Fraunhofer Institute for Silicon Technology)
 

Room 200A/200B/200C, Level 2, Quebec City Convention Center

Tuesday Evening Poster Session

Co-Chairs: C. Hunt
TimeAbs#Title and Authors
o 501 Silicon Wafer Bonding Using Deposited and Thermal Oxides: A Comparative Study I. Radu, R. Singh, M. Reiche, U. Gosele, S. Christiansen (Max Planck Institute of Microstructures Physics), B. Kuck and B. Tillack (IHP microelectronics)
o 502 Oxide Free Transfer of Silicon Layers in UHV A. Fecioru (Max-Planck-Institut für Mikrostrukturphysik), S. Senz and U. Goesele (Max-Planck-Institut fuer Mikrostrukturphysik)
o 503 Direct Wafer Fusion of GaAs Thin Film on InP by Chemical and Plasma Activation A. Jesudoss (Institute of Material and Research Engineering), S. Vicknesh, S. Tripathy and R. Akkipeddi (IMRE, Singapore)
o 504 Room Temperature UHV Bonding of Si to GaAs A. Fecioru (Max-Planck-Institut für Mikrostrukturphysik), S. Senz and U. Goesele (Max-Planck-Institut fuer Mikrostrukturphysik)
o 505 A Nano-thick SOI Fabrication Method C. Huang, J. Cheng, H. Wang, Y. Hsu, C. Chang, S. Lee and T. Lee (National Central University)
o 506 Thermal-microwave Hybrid SOI Materials Technology J. Cheng, G. Gan, C. Huang, Y. Hsu, C. Chang, H. Wang, S. Lee and T. Lee (National Central University)
o 507 UV Activation Treatment for Wafer Bonding H. Dang (California State University), C. Colinge and S. Holl (CSUS)
o 508 UHV- Direct Bonding of Semiconductor Wafers at Room Temperature using Hydrogen Ion Beam Surfaces Cleaning N. Razek, N. Razek and A. Schindler (Leibniz-Institut für Oberflächenmodifizierun)
o 509 Surface Morphology for Hydrogen Transferred and Thinned by Oxidation SOI Layers V. Popov (Institute of Semiconductor Physics)
o 510 Fabrication of Silicon-on-Diamond (SOD) Substrates T. Feygelson (Geo-Centers, Inc.), K. Hobart, M. Ancona, F. Kub and J. Butler (Naval Research Laboratory)
o 511 Interferometric Optical Isolator with Si Guiding Layer Operated in Unidirectional Magnetic Field H. Yokoi (Faculty of Engineering)
o 512 Electrical Properties of Low-Temperature Bonded Unipolar Si/Si Junctions B. Raeissi Nafchi and O. Engstrm (Chalmers University of Technology)
o 513 XPS Analysis of the Dose-Dependent Interaction of UV Radiation with a Silicon Surface J. Kowal (The Open University), T. Rogers (Applied Microengineering Limited), T. Nixon (The Open University) and N. Aitken (Appled Microengineering Limited)
 

Wednesday, May 18, 2005

Room 301B, Level 3, Quebec City Convention Center

Mechanical Characterization of Bonded Substrates

Co-Chairs: H. Moriceau & P. Enoksson
TimeAbs#Title and Authors
10:00 514 Mechanical Aspects of Wafer Bonding S. Spearing (University of Southampton) and K. Turner (Massachusetts Institute of Technology)
10:40 515 Mechanical Reliability of Directly Bonded Silicon J. Bagdahn (Fraunhofer Institute for Mechanics of Materials), M. Wiemer (Fraunhofer Institute Reliability and Microintegration) and M. Petzold (Fraunhofer Institute for Mechanics of Materials)
11:20 516 Influence of a Ductile Layer on the Toughness of Hydrophilic Wafer Bonding Y. Bertholet, J. Raskin and T. Pardoen (Universite Catholique de Louvain)
11:40 517 Effect of Wafer-Scale Shape Variations and Mounting in Wafer Bonding K. Turner (Massachusetts Institute of Technology), S. Spearing (University of Southampton), P. Hester, J. Sinha (ADE Corporation) and W. Baylies (BayTech Group)
 

Low Temeprature Bonding for SOI and MEMS

Co-Chairs: S. Bengtsson & T. Suga
TimeAbs#Title and Authors
14:00 518 Recent Results on Advanced Molecular Wafer Bonding Technology for 3D Integration on Silicon L. di Cioccio, B. Biasse, M. Kostrzewa, M. Zussy, J. Dechamp, B. Charlet, M. Vinet, J. Fedeli, T. Poiroux, N. Kernevez (CEA), P. Regreny (ECL), C. Lagahe-Blanchard and B. Aspar (TRACIT)
14:20 519 Surface Energy of Fusion Bonded Silicon Nitride to Silicon K. Midtbo (NTNU), K. Schjolberg-Henriksen, M. Taklo (SINTEF ICT, Dept. of Microsystems) and A. Ronnekleiv (NTNU, Dept. of electronics and telecommunication)
14:40 520 Low-temperature Wafer Bonding via DBD Surface Activation I. Radu, M. Reiche (Max Planck Institute of Microstructures Physics), M. Gabriel and M. Zoberbier (SUSS MicroTec AG)
15:00 521 Fabrication of SOI Substrates with Buried Silicide Layers for BICMOS-applications M. Wiemer (Fraunhofer Institute Reliability and Microintegration), S. Zimmermann (Chemnitz University of Technology, Center of Microtechnologies), Q. Zhao (Forschungszentrum Jülich, ISG 1-IT), B. Trui (Atmel Germany GmbH), C. Kaufmann (Chemnitz University of Technology, Center of Microtechnologies), S. Mantl (Forschungszentrum Jülich, ISG 1-IT), V. Dudek (Atmel Germany GmbH) and T. Gessner (Fraunhofer Institute Reliability and Microintegration, Department Micro Devices and Equipment)
15:20 522 Low-Temperature Silicon Wafer Bonding with Titanium J. Yu (Rensselaer Polytechnic Institute), Y. Wang (Lawrence Livermore National Laboratory), J. Lu and R. Gutmann (Rensselaer Polytechnic Institute)
15:40 523 Activation Process and Bonding Mechanism of Si/LiNbO3 and LiNbO3/ LiNbO3 at Room Temperature M. Howlader, T. Suga (The University of Tokyo) and M. Kim (The University of Texas at Dallas,Richardson,TX 75083)
16:00 Intermission (20 Minutes)
16:20 524 Mechanisms of Low-Temperature Wafer Bonding M. Reiche, I. Radu (Max Planck Institute of Microstructures Physics), M. Gabriel, M. Zoberbier, S. Hansen (Suss MicroTec AG) and M. Eichler (Fraunhofer-Institut)
16:40 525 X-ray Characterization of Bonding Interfaces F. Rieutord (CEA), H. Moriceau (CEA/Leti), C. Morales and J. Eymery (CEA)
17:00 526 Atomically Flat Surface Morphology of Hydrogen Transferred Si Film with Boron Delta Doped Layer V. Popov, L. Safronov and A. Nikiforov (Institute of Semiconductor Physics)