207th ECS Meeting - Quebec City, Canada

May 15 - May 20, 2005

PROGRAM INFORMATION
 

J3 - State-of-the-Art Program on Compound Semiconductors XLII

Electronics and Photonics
 

Tuesday, May 17, 2005

Room 302A, Level 3, Quebec City Convention Center

GaN and Wide Bandgap Materials

Co-Chairs: L.J. Chou & Y. Hirose
TimeAbs#Title and Authors
14:00 578 The Use of GaN Based Electronic And Photonic Devices for Bio-Applications F. Ren (University of Florida) and B. Kang (Univeristy of Florida)
14:30 579 High Performance AlGaN/GaN HFETs for RF Applications Y. Hirose, T. Murata, M. Hikita, K. Nakazawa, K. Inoue, Y. Uemoto, T. Tanaka and D. Ueda (Matsushita Electric Industrial Co., Ltd.)
15:00 580 Synthesis of GaN Tubular Nanostructures and GaN/CNT/Si/Silicate Nanocables by Metalorganic Chemical Vapor Deposition L. Chen (National Tsing Hua University)
15:30 Intermission (15 Minutes)
15:45 581 An Overview of Relevant Technology Development for SiC-Based Gas Sensor Systems G. Hunter (NASA Glenn Research Center), J. Xu, P. Neudeck (NASA Glenn), A. Truneck, L. Chen, D. Spry (OAI), D. Lukco (QSS/NASA Glenn), M. Artale, P. Lampard, D. Androjna (Akima/NASA Glenn), D. Makel (Makel Engineering, Inc), B. Ward (Makel Engineering, Inc.) and C. Liu (Case Western Reserve Univeristy)
16:15 582 Novel Oxides and Reliability for the Passivation of AlGaN/GaN High Electron Mobility Transistor B. Gila (Univeristy of Florida), A. Onstine, M. Hlad, A. Gerger, A. Herrero, K. Allums, D. Stodilka, S. Jang, S. Kang, C. Abernathy, F. Ren (University of Florida) and S. Pearton (univ.florida)
16:45 583 Laser-Synthesis of Optical Structures in Silicon Carbide Z. Tian (University of Central Florida), N. Quick (AppliCote Associates, LLC) and A. Kar (University of Central Florida)
17:00 584 Nitrogen Incorporation in GaAsN Grown by Chemical Beam Epitaxy Y. Ohshita, K. Nishimura, H. Lee, K. Gono, N. Kojima and M. Yamaguchi (Toyota Technological Institute)
17:15 585 Performance and Reliability of InGaN-GaN Light-Emitting Diodes with Mirror Wafer Bonding Technology W. Peng and Y. Wu (National Chiao Tung University)
17:30 586 Dot Pattern Epitaxial Lateral Overgrowth of GaN by Hydride Vapor Phase Epitaxy W. Liu, J. Tsay, Y. Guo (industrial Technology Research Institute), H. Liu (National Cheng Kung University) and R. Yeh (industrial Technology Research Institute)
17:45 587 Multi-Energy Oxygen Ion Implantation for AlGaN/GaN HEMT Isolation J. Shiu, Y. Shoau, J. Huang, Y. Hsieh, C. Chang, C. Lu and E. Chang (Nation Chiao-Tung University)
 

Wednesday, May 18, 2005

Room 302A, Level 3, Quebec City Convention Center

High-Speed Device Applications

Co-Chairs: L.J. Chen & J.J. Uyeda
TimeAbs#Title and Authors
10:00 588 MMIC Compatible Lateral Deflection RF MEMS Switches P. Chang-Chien (Northrop Grumman Space Technology)
10:30 589 10 Gb/s and 40 Gb/s Integrated Electroabsorption Modulators On Novel Submounts Y. Luo, B. Xiong, J. Wang and C. Sun (Tsinghua University)
11:00 590 Multiple Level Plated Gold Interconnect for HEMT Compaction J. Uyeda, J. Wang, M. Barsky, R. Grundbacher, K. Luo, R. Elmadjian, L. Dang, C. Cheung, D. Li and D. Farkas (Northrop Grumman Space Technology)
11:30 591 In Search Of Higher Density MIM Capacitor for GaAs RF Applications J. Yota, R. Ramanathan, K. Kwok, T. Ko (Skyworks Solutions, Inc.), H. Shao (Skyworks Solutions) and J. Arreaga (Skyworks Solutions, Inc.)
11:45 592 Sub-Micron INP Double Heterojunction Bipolar Transistor with Greater than 400GHZ fT and fMAX P. Chang (Northrop Grumman), D. Sawdai, V. Gambin, X. Zeng, D. Li, J. Yamamoto, K. Loi, G. Leslie, J. Wang, R. Elmadjian, P. Nam, C. Grossman, M. Barsky, A. Gutierrez-Aitken and A. Oki (Northrop Grumman Space Technology)
 

Compound Semiconductor Growth and Process Technology

Co-Chairs: Y. Luo & N.F. Chen
TimeAbs#Title and Authors
14:00 593 Passivation of III/V-based Compound Semiconductor Devices Using High-Density Plasma Deposited Silicon Nitride Films R. Sah, M. Mikulla, H. Schneider and G. Weimann (Frauhofer Institut)
14:30 594 BCB Deep Via Etching Process on ICP Etching System J. Wang, C. Monier (Northrop Grumman Space Technology), P. Chang (Northrop Grumman), X. Zeng, D. Li, M. Barsky and A. Gutierrez-Aitken (Northrop Grumman Space Technology)
15:00 595 Improvement of III-N Surfaces After Inductively Coupled Plasma Dry Etch Exposure D. Keogh (University of California, San Diego), R. Dupuis (Georgia Tech), M. Feng (University of Illinois), S. Raychaudhuri and P. Asbeck (University of California, San Diego)
15:15 596 RPCVD Silicon Nitride Passivation of InGaAsP with Temperature Ramping during Deposition J. Kim (Korea Advanced Institute of Science and Technology)
15:30 Intermission (15 Minutes)
15:45 597 Space-Growth And Characterization of Semiconductors N. Chen (Institute of Semiconductors, Chinese Academy of Sciences)
16:15 598 Growth and Characterization of GaN Nanowires on Silicon(100) L. Chou, J. Hsieh and S. Chiou (National Tsing Hua University)
16:45 599 In0.3Ga0.7As Plate Crystal Growth for Substrates by the TLZ Method K. Kinoshita, Y. Ogata, S. Adachi, M. Natsuisaka, T. Ishikawa, T. Masaki and S. Yoda (Japan Aerospace Exploration Agency)
17:00 600 Effects of Interfacial Native Oxide on Electrical Properties of Bonded GaAs Wafers P. Liu (National Chiao Tung University), C. Lu, W. Peng, Y. Wu (Department of Materials Science and Engineering, National, Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.) and H. Ouyang (National Chung Hsing University)
17:15 601 Selective Area MOVPE for GaAs on (100) Misoriented Substrates H. Song (The University of Tokyo), X. Song (Research Center for Advanced Science and Technology, The Univ. of Tokyo), M. Sugiyama (Dept. of Electronic Engineering, The Univ. of Tokyo), Y. Nakano (Research Center for Advanced Science and Technology, The Univ. of Tokyo) and Y. Shimogaki (Dept. of Materials Engineering, The Univ. of Tokyo)
17:30 602 Effects of In- , Anti-Phase Bonding and Type of Dopant on The Microstructures of Nano-Scaled Interface and Electrical Properties of GaAs Wafers H. Ouyang, J. Cheng (National Chung Hsing University) and Y. Wu (National Chiao Tung University)
17:45 603 Inactivation of the Junction Surfaces in SiGe/Si Diodes F. Hirose and M. Mukaida (Yamagata University)
 

Thursday, May 19, 2005

Room 302A, Level 3, Quebec City Convention Center

ZnO Materials and Applications

Co-Chairs: V. Gambin & X. Du
TimeAbs#Title and Authors
08:30 604 Electronics Division Award Address- ZnO Spintronics and Nanowire Devices S. Pearton (univ.florida), D. Norton, Y. Heo, L. Tien, M. Ivill, Y. Li, S. Han (University of Florida), B. Kang (Univeristy of Florida), F. Ren, J. Kelly, A. Hebard (University of Florida), C. Kao and G. Chi (North Carolina State University)
09:00 605 Polarity-Controlled Growth of High-Quality ZnO Epitaxial Films X. Du, Q. Xue and J. Jia (Institute of Physics)
09:30 606 Thermal Stability of Tungsten-Based Schottky Contacts to N-Type ZnO K. Ip, K. Rohit, D. Norton (University of Florida), S. Pearton (univ.florida), F. Ren, I. Kravchenko (University of Florida), C. Kao and G. Chi (North Carolina State University)
09:45 Intermission (15 Minutes)
10:00 607 Preparation and Properties of ZnO Film on Si(111) Substrate with SiC Buffer Layer Deposited by MOCVD Z. Fu, J. Zhu and R. Yao (University of Science and Technology of China)
10:30 608 GaN-Based and ZnO Nanorod Sensors for Wireless Hydrogen Leak Detection J. Lin, A. El Kouche, M. Law, F. Ren, S. Kang (University of Florida), S. Pearton (univ.florida), D. Norton and C. Abernathy (University of Florida)
11:00 609 Metal Organic Chemical Vapor Deposition of ZnO and MgxZn1-xO Films and Nanostructures Y. Chen (SuperPower Inc)
11:30 610 Photocatalytic Activity of Visible Light Active Carbon modified (CM)-n-TiO2 Nanoparticles S. Khan and C. Xu (Duquesne University)
11:45 611 Luminescent and Electric Properties of ZnO:Li Films Derived by Sol-gel B. Lin, R. Zhou and Z. Fu (university of Science and Technology of China)