207th ECS Meeting - Quebec City, Canada |
May 15 - May 20, 2005 |
PROGRAM INFORMATION |
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M1 - Processes at the Compound-Semiconductor/Solution Interface |
Electronics and Photonics/Physical and Analytical Electrochemistry |
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Monday, May 16, 2005 |
Room 302B, Level 3, Quebec City Convention Center |
| Co-Chairs: D.N. Buckley & I. Gerard |
| Time | Abs# | Title and Authors |
| 10:00 |
725
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On the Effect of Surface Pre-treatment Upon the Electronic Structure of n-GaN Surfaces
K. Strubbe and I. Huygens (Ghent University)
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| 10:30 |
726
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Surface Reactivity of InSb Studied by Cyclic Voltammetry Coupled to XPS
A. Etcheberry (Institut Lavoisier _IREM_CNRS), B. Kunstler and B. Canava (Institut Lavoisier_IREM_CNRs)
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| 10:50 |
727
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Study of the Flat Band Potential of InP in Liquid Ammonia: A Nernstian Behavior?
A. Goncalves (Institut Lavoisier_IREM_CNRS), M. Herlem (Institut lavoisier_IREM) and A. Etcheberry (Institut Lavoisier _IREM_CNRS)
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| 11:10 |
728
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Growth of Porous InP in Liquid Ammonia
I. Gerard (Institut Lavoisier_IREM_CNRS), A. Goncalves (Institut lavoisier_IREM), A. Etcheberry (Institut Lavoisier _IREM_CNRS) and M. Herlem (Institut lavoisier_IREM)
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| 11:40 |
729
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Nanoporous InP: Anodic Formation and Growth Mechanism in Aqueous Electrolytes
C. O'Dwyer (Tyndall National Institute)
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| Co-Chairs: A. Etcheberry & C. O'Dwyer |
| Time | Abs# | Title and Authors |
| 14:00 |
730
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Self-Organized Pores in InP and GaP
P. Schmuki (University of Erlangen-Nuremberg)
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| 14:30 |
731
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Current Oscillations on n-InP Electrodes in Aqueous (NH4)2S at Anodic Potentials
D. Buckley (University of Limerick), S. Newcomb (Sonsam Ltd.) and T. Melly (University of Limerick)
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| 14:50 |
732
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Study of the Copper Electrodeposition onto InP
P. Tran Van, I. Gerard (Institut Lavoisier_IREM_CNRS) and A. Etcheberry (Institut Lavoisier _IREM_CNRS)
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| 15:10 |
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Intermission (20 Minutes)
|
| 15:30 |
733
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UHV-EC studies of the Cleaning InP(100) and Electrodeposition of CdTe on InP(100)
J. Stickney (The University of Georgia) and M. Muthuvel (University of Georgia)
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| 16:00 |
734
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Electrodeposition of Compound Chalcogenide Semiconductors
D. Lincot (Ecole Nationale Superieure de Chimie de Paris), H. Gomez and R. Henriquez (Instituto de Quimica de Valparaiso)
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| 16:30 |
735
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Grain Size of Lead Selenide Electrodeposited onto InP Followed by Photoluminescence of the InP Substrate
I. Gerard (Institut Lavoisier_IREM_CNRS), M. Froment, H. Cachet (UPR 15 CNRS LISE) and A. Etcheberry (Institut Lavoisier _IREM_CNRS)
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| 16:50 |
736
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Electrogenerated Chemiluminescence from Single CdSe Nanocrystals
Z. Ding, J. Zhou (University of Western Ontario), J. Zhu (The University of Western Ontario) and J. Brzezinski (University of Western Ontario)
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Tuesday, May 17, 2005 |
Room 302B, Level 3, Quebec City Convention Center |
| Co-Chairs: B. Marsan & F. Ozanam |
| Time | Abs# | Title and Authors |
| 08:30 |
737
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Electrochemistry and Etching of Wide Bandgap,Chemically Resistant Semiconductors
J. Kelly, D. van Dorp and M. Kooijman (Utrecht University)
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| 09:00 |
738
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Wet Chemcial Etching of Compound Semiconductors
S. Pearton (univ.florida) and F. Ren (University of Florida)
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| 09:30 |
739
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Nanoelectronics on Semiconductor/Solution Interfaces
W. Lorenz, W. Wiesbeck, P. Hugelmann and M. Hugelmann (University of Karlsruhe)
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| 10:00 |
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Intermission (20 Minutes)
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| 10:20 |
740
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Area Selective Fabrication of Arrayed Microstructures on Si Surface by Electrochemical Processes
T. Homma (Waseda University)
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| 10:50 |
741
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Natural Lithography of Si Substrate Using Self-ordered Anodic Alumina and Nanospheres
S. Ono and H. Asoh (Kogakuin University)
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| 11:20 |
742
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Kinetic Studies on the Mechanism of Wet Chemical Etching of Silicon in HF / HNO3 Mixtures
J. Acker, M. Steinert, A. Henssge, A. Krause and K. Wetzig (Leibniz Institute for Solid State and Materials Research Dresden)
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| 11:40 |
743
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One-step Preparation of Clean Acid-terminated Silicon Surfaces
F. Ozanam, A. Faucheux, A. Gouget-Laemmel (CNRS-Ecole Polytechnique), C. Douarche (CNRS-Ecole Polytechnique and Interdisciplinary Research Institute), C. Henry de Villeneuve, P. Allongue, J. Chazalviel (CNRS-Ecole Polytechnique) and R. Boukherroub (Interdisciplinary Research Institute)
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Room 200A/200B/200C, Level 2 Quebec City Convention Center |
Tuesday Evening Poster Session |
| Co-Chairs: D.N. Buckley |
| Time | Abs# | Title and Authors |
| o |
744
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Comparative Study of Optical Properties of Nanoporous GaN Prepared by UV-Assisted Electrochemical and Electroless Etching
S. Tripathy (IMRE, Singapore), A. Vajpeyi (SMA,NUS), S. Chua (IMRE, NUS) and J. Arokiaraj (IMRE)
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