208th ECS Meeting - Los Angeles, California

October 16 - October 21, 2005

PROGRAM INFORMATION
 

F2 - Thermal and Plasma CVD of Nanostructures

Dielectric Science and Technology
 

Tuesday, October 18, 2005

San Gabriel A, Lobby Level

Co-Chairs: M. Sunkara & L. Delzit
TimeAbs#Title and Authors
14:00 412 SiO2 Dielectric Film Deposition Using 100% O3 - TEOS CVD N. Kameda, T. Nishiguchi, T. Noyori, Y. Morikawa, M. Kekura (Meidensha corporation), H. Nonaka and S. Ichimura (Advanced Industrial Sciece and Technology)
14:20 413 Nanocrystalline Poly-Silicon Process Engineering M. Li, Y. Ma, K. Zhang, S. Panayil and R. S. Iyer (Applied Materials, Inc.)
14:40 414 Local FEB-CVD of Nanostructures M. Fischer (University of Technology of Vienna), J. Gottsbachner, S. Mueller, W. Brezna, M. Schramboeck, H. Wanzenboek and E. Bertagnolli (Institute of Solid State Electronics)
15:00 415 Electrical Transport Through a Ge Self-assembled Quantum Dot H. Chung and C. Liu (National Cheng Kung University)
15:20 Intermission (20 Minutes)
15:40 416 Mechanisms of Nucleation and Growth of Nanowires in Self-catalysis Schemes: Indium Nitride S. Vaddiraju (University of Louisville), M. Meyyappan (NASA Ames Research Center) and M. Sunkara (University of Louisville.edu)
15:55 417 Fabrication of Aligned Carbon Nanotube Trees by Continually Supplying the Catalyst Growth Method N. Jiang (Kochi University of Technology)
16:15 418 Carbon Nanotube Used as a Reinforcemnet for Biodegradable Poly(L-Lactide) Y. Shieh and G. Liu (National Yunlin University of Science and Technology)