208th ECS Meeting - Los Angeles, California

October 16 - October 21, 2005

PROGRAM INFORMATION
 

G3 - High Dielectric Constant Gate Stacks III

Dielectric Science and Technology/Electronics and Photonics
 

Monday, October 17, 2005

Sacramento, Level 2

Alternative Substrates

Co-Chairs: D. Landheer & A. Toriumi
TimeAbs#Title and Authors
10:00 489 Gate Dielectrics for Ge MOS Technology K. C. Saraswat, A. Nayfeh (Stanford University) and C. Chui (Intel)
10:30 490 Electrical Properties of High-k HfO2 Films on Si1-xGex Substrates with Pre-treatment Using O3 and NH3 T. Park, C. Hwang and J. Kim (Seoul National University)
10:50 491 Characterization of Atomic-beam Deposited GeO1-xNx/HfO2 Stacks on Ge M. Houssa, T. Conard, J. Van Steenbergen (IMEC), G. Mavrou, Y. Panayiotatos, T. Dimoulas (NCSR Demokritos), M. Meuris, M. Caymax and M. Heyns (IMEC)
11:10 492 Effect of Nitridation on Ge/HfO2 Interface R. Garg and D. Misra (New Jersey Institute of Technology)
11:30 493 Interface Trap Characterization and Fermi Level Pinning in Si-Passivated Ge/HfO2 Capacitors K. Martens, B. Kaczer, P. Roussel, G. Groeseneken and H. Maes (IMEC)
11:50 494 Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices R. Mahapatra, N. Poolamai (University of Newcastle upon Tyne), N. Wright (University of Newcastle, UK), P. Coleman and P. Burrows (University of Bath, UK)
12:10 495 Advanced High K Dielectrics for Nano-Electronics Science and Technologies M. Hong and J. Kwo (National Tsing-Hua University)
 

G2 & G3 Joint Session- High-K Materials for Memory I-NVM

Co-Chairs: A. Londergan & S. De Gendt
TimeAbs#Title and Authors
14:00 496 High-K Materials for Nonvolatile Memories M. Specht, M. Staedele and F. Hofmann (Infineon)
14:30 497 High-k Materials for Tunnel Barrier Engineering in Floating-Gate Flash Memories P. Blomme, B. Govoreanu, M. Rosmeulen (Imec), A. Akheyar (Infineon technologies, affiliated to Imec), L. Haspeslagh, J. De Vos, M. Lorenzini, J. Van Houdt (Imec) and K. De Meyer (IMEC/KULeuven)
15:00 498 High-k Materials in Flash Memories M. Alessandri, R. Piagge, S. Alberici, E. Bellandi, M. Caniatti, G. Ghidini, A. Modelli, G. Pavia, E. Ravizza, A. Sebastiani (STMicroelectronics), C. Wiemer, S. Spiga, M. Fanciulli (Laboratorio Nazionale MDM-INFM), V. Fiorentini, E. Cadelano and G. Lopez (SLACS-INFM, Physics Dpt., Cagliari University)
15:30 499 Characterization of Charge Modification in ALD Nanolaminates T. E. Seidel (Genus, Inc.), A. Srivastava, Z. Zhang (Genus, Inc), T. Dimitrova (Four Dimensions), A. R. Londergan and Z. Karim (Genus, Inc)
15:50 500 Modeling of Current Conduction in HfO2 Stack Structures Y. Chiou, S. Gaddipati, M. Mansouri, S. Jeedigunta and A. Kumar (University of South Florida)
 

G2 & G3 Joint Session- High-K Materials for Memory II-DRAM

Co-Chairs: Ana Londergan & K. Saraswat
TimeAbs#Title and Authors
16:30 501 Recent Developments in ALD Technology for 50nm Trench DRAM Applications U. Schroeder, S. Jakschik and E. Erben (Infineon Technologies)
17:00 502 High-k Gate Dielectrics for Memory Devices U. Chung (Samsung Electronics)
17:30 503 Compatibility of High K Dielectric with TiCl4 Based TiN for MIS Storage Capacitors for sub 70 nm DT DRAM Technology and Beyond X. Gay, B. Hintze (Infineon Technologies SC300 GmbH), E. Erben (Infineon Technologies), H. Bernhardt, S. P. kudelka (Infineon Technologies SC300 GmbH), C. Goupil and B. Mercey (Laboratoire CRISMAT, Caen, France)
17:50 504 Deposition Process and Electrical Properties of (Zr,Ti)O2 Thin Film Using [Zr(OtBu)4 + Ti(OtBu)4 ] for Ru/ Insulator/ Ru Capacitor J. Lim (Samsung Electronics co.), K. Cho, K. Kim, S. Chung, W. Kim, K. Lee, J. Kim, H. Lim, C. Yoo, S. Kim, U. Chung (Samsung Electronics) and J. Moon (Samsung Electronics Co., Ltd.)
 

Tuesday, October 18, 2005

Sacramento, Level 2

High-K Materials and Processing I

Co-Chairs: W. Tsai & M. Specht
TimeAbs#Title and Authors
08:00 505 Rare-earth Metal Scandate High-k Layers: Promises and Problems C. Zhao (IMEC), T. Heeg, M. Wagner, J. Schubert (FZ JUlich), T. Witters, B. Brijs, H. Bender, O. Richard (IMEC), V. Afanasiev (KULeuven), M. Caymax and S. De Gendt (IMEC)
08:30 506 Bulk and Interface Material and Electrical Properties of Hafnium-Doped Tantalum Oxide High-K Films J. Lu and Y. Kuo (Texas A&M University)
08:50 507 Properties of Lanthanum Aluminate Deposited by ALD and MBD Z. (. Yu, D. Triyoso (Freescale Semiconductor Inc.), H. Li (Motorola), K. Moore, R. Hegde, J. Grant, B. White Jr. and P. Tobin (Freescale Semiconductor Inc.)
09:10 508 Doped HfO2 for Higher-k Dielectrics A. Toriumi, Y. Yamamoto, Y. Zhao, K. Tomida and K. Kita (The University of Tokyo)
 

High-K Materials and Processing II

Co-Chairs: W. Tsai & P. Lysaght
TimeAbs#Title and Authors
10:00 509 New Precursors for the MOCVD and ALD of Rare Earth Oxides A. C. Jones and P. R. Chalker (University of Liverpool)
10:30 510 A Chemists View of Precursors and Processes for the Production of Hf-Based High K Dielectrics R. D. Clark (Air Products and Chemicals Inc.), A. Hochberg (Schumacher APCI), M. Jahl, K. Cuthill and T. Kok (Air Products and Chemicals, Inc.)
10:50 511 Annealing Effect and Suppression of Hydration of La2O3 Thin Films D. Eom, S. No, C. Hwang and H. Kim (Seoul National University)
11:10 512 High-Temperature Processing Effects on Lanthanum Silicate Gate Dielectric MIS Devices D. J. Lichtenwalner, J. Jur (North Carolina State University), N. Inoue (North Carolina State University / NEC) and A. Kingon (North Carolina State University)
11:30 513 Al/La2O3 analysis of Post Metallization Annealed MISFET by XPS Y. Kuroki, J. Ng and K. Kakushima (Tokyo Institute of Technology)
11:50 514 Y-Doped HfO2 Thin Films Grown by Injection MOCVD E. Rauwel Buzin, C. Millon (Laboratoire des Materiaux et du Genie Physique), F. Ducroquet (Laboratoire de Physique de la Matiere), B. Pelissier (Laboratoire des Technologies de la Microelectronique), M. Rossell, J. Verbeeck, G. Van Tendeloo (RUCA-EMAT), B. Hollaender (Forschungszentrum Juelich), S. Rushworth (Epichem Oxide and Nitrides) and C. Dubourdieu (Laboratoire des Materiaux et du Genie Physique)
12:10 515 Study on the Chemical Interaction Between an Atomic-Layer-Deposited HfO2 Film and Si Substrate Depending on the Interfacial SiN Layer Formation S. H. Hong, J. H. Jang, T. Park (Seoul National University), J. Won, R. Jung (Samsung Advanced Institute of Technology), M. Kim and C. Hwang (Seoul National University)
 

Gate Electrode Materials I

Co-Chairs: D. Misra & M. Alessandri
TimeAbs#Title and Authors
14:00 516 Prospect of Hf-based Gate Dielectric by PVD with FUSI Gate for LSTP Application M. Niwa, M. Niwa (Matsushita Electric Ind., Co., Ltd., c/o IMEC), R. Mitsuhashi, K. Yamamoto, S. Hayashi, Y. Harada (Matsushita Electric Ind.,Co., Ltd.), M. Kubota (Matsushita Electric), A. Rothchild, T. Hoffmann, S. Kubicek, S. De Gendt, M. Heyns and S. Biesemans (IMEC)
14:30 517 Thermal Robustness of VFB and EOT in HfOx(N) p-MOS Devices with Partially Silicided Pt Gate Electrodes M. Kadoshima, T. Nabatame, M. Takahashi, A. Ogawa, K. Iwamoto (MIRAI-ASET), H. Ota (MIRAI-ASRC, AIST), H. Satake (MIRAI-ASET) and A. Toriumi (The University of Tokyo)
14:50 518 Workfunction Tuning of Nickel Silicide by Varying Nickel and Silicon Composition N. Biswas, S. Novak and V. Misra (North Carolina State University)
15:10 519 Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-based gate dielectric using Controlled Lateral Oxidation V. S. Kaushik (Freescale Semiconductor/IMEC), E. Rohr, S. Hyun, S. DeGendt, S. Van Elshocht, A. Delabie, J. Everaert, A. Veloso, S. Brus, L. Ragnarsson, O. Richard, M. Caymax and M. Heyns (IMEC)
 

Physical/Chemical Characterization

Co-Chairs: S. De Gendt & Y. Nara
TimeAbs#Title and Authors
15:50 520 The Influence of N Incorporation on the Crystallization Kinetics of Hf Based Gate Dielectric Films P. Lysaght, J. Barnett (SEMATECH), M. Quevedo-Lopez (TI assignee to SEMATECH), P. Kirsch (IBM assignee to SEMATECH), G. Bersuker, M. Gardner and B. Lee (SEMATECH)
16:20 521 Crystallinity and Defects in Hafnium Oxide and Hafnium Silicate Films N. V. Nguyen (National Institute of Standards and Technology), D. Chandler-Horowitz (NIST), A. Davydov (National Institute of Standards and Technology), C. Hacker, S. Park, H. Xiong, J. Ehrstein, J. Kopanski, J. Suehle, E. Vogel (NIST) and M. Frank (IBM)
16:40 522 Effect of Nitrogen on the Electronic Properties of Hafnium Oxynitrides J. Choi (UCLA), R. Puthenkovilakam (Intel) and J. P. Chang (University of California)
17:00 523 Advanced Nano-analysis of High-k Dielectric Stacks M. MacKenzie, F. Docherty, A. Craven (University of Glasgow), D. McComb and C. McGilvery (Imperial College London)
17:20 524 Structural Effects in the Dielectric Constant of Rare-Earth Oxides: Nd2O3 T. Busani (UNM), P. Gonon (CNRS / UJF) and R. Devine (UNM)
17:40 525 Probing Point Defects in Stacks of Ultrathin High-k Metal Oxides on Semiconductors by Electron Spin Resonance: The Si/HfO2 vs the Ge/HfO2 System A. Stesmans and V. Afanas'ev (University of Leuven)
 

Pasadena, Lower Lobby Level

Tuesday Evening Poster Session

Co-Chairs: D. Misra
TimeAbs#Title and Authors
o 526 Charge Capture Kinetics of Nitride Trap in Oxide-Nitride-Oxide(ONO) Structures by Deep Level Transient Spectroscopy H. Cho (Dongguk University), C. Park, H. Oh, D. Kwak, Y. Lee (Dept. of Physics, Dongguk University), W. Yang (Dongguk University) and C. Kim (Devices Lab, Samsung Advanced Institute of Technology)
o 527 A Novel Iridium Precursor for MOCVD K. Kawano, T. Furukawa, M. Takamori, K. Tada, T. Yamakawa (Sagami Chemical Research Center), N. Oshima (TOSOH corporation), H. Fujisawa and M. Shimizu (University of Hyogo)
o 528 Improvement in Thermal Stability of MOCVD HfO2 Films Using an ALD SiNx Interfacial Layer H. J. Jang, S. H. Hong, T. Park (Seoul National University), J. Heo (Semiconductor R&D center, Samsung electronic co., LTD.), S. Yang (Samsung Electronics Co., Ltd.), M. Kim and C. Hwang (Seoul National University)
o 529 Dielectric Properties of Cu/Amorphous BaTiO3/Cu Structures T. Busani (UNM), P. Gonon (CNRS / UJF), F. El Kamel (LEMD - CNRS/UJF) and F. Jomni (LEMD -(CNRS/UJF)
o 530 Structural and Electrical Properties of (HfO2)1-x(TiO2)x Alloy Films Y. Lo (National Tsing Hua University) and T. Wu (National Tsing-Hua University)
o 531 Formation of Pedestal Oxynitride Layer by Extremely Shallow Nitrogen Implantation in Planar R.F. Plasma Reactor T. Bieniek, R. Beck, A. Jakubowski (Warsaw University of Technology), P. Hoffmann, D. Schmeisser (Brandenburg Technical University Cottbu), P. Konarski and M. Cwil (Industrial Institute of Electronics)
o 532 Stress Modulation of PECVD Silicon Nitride M. Balseanu, L. Xia, V. Zubkov, M. Le, J. Lee and H. M'Saad (Applied Materials)
o 533 Effects of the Defects at HfOxNy/Si Interface on Electrical and Reliability Characteristics of MOS Devices K. Chang-Liao (National Tsing Hua Univ.)
o 534 Crystallization and Wet Etching Characteristics of Atomic Layer Deposited HfO2 Films using Hf([N(CH3)(C2H5)]3[OC(CH3)3]) Precursor and O3 Oxidant M. Seo, S. Kim, K. Kim, T. Park, J. Kim, C. Hwang (Seoul National University) and H. Cho (Hynix semiconductor, Co)
o 535 Influence of Deposition Temperature of Atomic-Layer-Deposited HfO2 Films on Interfacial Chemical Structure and Interface Trap Density J. Kim, T. Park, C. Hwang, S. H. Hong and M. Seo (Seoul National University)
o 536 Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate H. Kang, S. Kim, J. Kim, J. Choi and H. Jeon (Hanyang University)
o 537 Post Metallization Anneal Effects in HfO2 Based Capacitors with Various Gate Electrodes Y. Lu, O. Buiu, I. Mitrovic, S. Hall, P. R. Chalker, R. Potter (University of Liverpool), A. Nazarov and V. Lysenko (National Academy of Sciences of Ukraine)
o 538 CAFM Study on High-k Oxide HfO Film J. Park (Electronics and Telecommunications Research Institute)
o 539 A Radar for Ultra-thin High-k Dielectric Film: Zero-bias Thermally Stimulated Current Spectroscopy (ZBTSC) W. Lau (Nanyang Technological University) and T. Han (Lam Research Corporation)
o 540 Ruthenium and Ruthenium Oxide Films Deposition by MOCVD using Ru(DMPD)2 K. Kawano (Sagami Chemical Research Center), H. Kosuge, N. Oshima (TOSOH corporation) and H. Funakubo (Tokyo Institute of Technology)
 

Wednesday, October 19, 2005

Sacramento, Level 2

Interfaces and Defects

Co-Chairs: S. De Gendt & A. Stesmans
TimeAbs#Title and Authors
10:00 541 Advanced Gate Dielectric Stacks: Interactions at the Nanometer Scale S. Guha (IBM T. J. Watson Research Center)
10:30 542 Interfacial Layer Formation on Silicon by Halogen Activation A. G. Thorsness and A. Muscat (University of Arizona)
10:50 543 Interfacial Layer in High-k Dielectrics: Characterization and Suppression G. Larrieu, M. Tao (University of Texas at Arlington), N. Moumem (SEMATEC), G. Song, X. Yang, E. Moldonado, W. Kirk (University of Texas at Arlington), M. Kim (University of Texas at Dallas), W. Bai and D. Kwong (University of Texas at Austin)
11:10 544 Interfacial Trapping at Spectroscopically-detected Oxygen vacancies in Nano-crystalline ZrO2 and HfO2:An Engineering Solution for Elimination of Vacancy Defects in Non-crystalline Ternary Silicate Alloys G. Lucovsky (NC State University)
11:30 545 A Simple Approach to Reduce Interlayer Formation of Sputtered Hf-based Gate Dielectrics by Nitrogen Incorporation J. Chen, C. Lu and Y. Lai (National Cheng-Kung University)
11:50 546 Interface Engineering for High-K Gate Dielectric Device Performance and Reliability Enhancement H. Tseng (Freescale Semiconductor)
 

High-K Materials and Processing III

Co-Chairs: R. Jammy & S. Kar
TimeAbs#Title and Authors
14:00 547 Studies and Optimization of HfO2 Grown by HfCl4/H2O Atomic Layer Deposition A. Delabie, M. Caymax, B. Brijs, D. Brunco, T. Conard, E. Sleeckx, L. Ragnarsson, S. Van Elshocht, S. De Gendt and M. Heyns (IMEC)
14:30 548 Sub 2 nm Thick Zirconium Doped Hafnium Oxide High-K Gate Dielectrics Y. Kuo, J. Lu, J. Yan, T. Yuan, H. Kim (Texas A&M University), J. Peterson and M. Gardner (SEMATECH)
14:50 549 Ultra-Thin HfON Films Formed with He/FG Plasma Jet Assisted PVD Process Y. Liu, S. Wang and T. Ma (Yale University)
15:10 550 Quality Improvement and Electrical characteristics of High-k Films after Receiving Direct Superimposed with Alternative Current Anodic Oxidation (DAC-ANO) Compensation C. Chang, T. Wang and J. Hwu (National Taiwan University)
15:30 551 The Effect of Nitrogen Incorporation on the Material and Electrical Properties of HfO2 on Si M. Sawkar (University of California, Los Angeles), J. Choi (UCLA), R. Puthenkovilakam (Intel) and J. P. Chang (University of California)
 

Gate Electrode Materials II

Co-Chairs: H. Iwai & S. Guha
TimeAbs#Title and Authors
16:10 552 Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO2 Related High-k Dielectrics Interfaces K. Shiraishi (University of Tsukuba), K. Torii (Selete (present adress Hitachi)), Y. Akasaka (Semiconductor Leading Edge Technologies), T. Nakayama (Chiba University), T. Nakaoka (University of Tsukuba), S. Miyazaki (Hiroshima University), T. Chikyow (NIMS), K. Yamada (Waseda University) and Y. Nara (Semiconductor Leading Edge Technologies)
16:40 553 Evaluation of Nb(Si)N as Metal Gate Material N. Van Hoornick (IMEC vzw), H. De Witte (ASM Belgium), T. Witters, C. Zhao, T. Conard (IMEC), H. Huatori (ASM Microchemistry Oy), J. Swerts (ASM Belgium), T. Schram (IMEC vzw), J. Maes (ASM Belgium), S. De Gendt and M. Heyns (IMEC)
17:00 554 Impact of Al, Ni, and TiN gates on MOCVD-ZrO2-MOS-Capacitors S. M. Abermann (Vienna University of Technology), J. Efavi, M. Lemme (Advanced Microelectronic Center, AMO, Aachen) and E. Bertagnolli (Institute of Solid State Electronics)
17:20 555 Dielectric Evolution Characteristics of HfCN Metal Electrode Gated MOS Stacks W. Wang (the University of Tokyo), T. Nabatame (MIRAI-ASET) and Y. Shimogaki (The Univ. of Tokyo, Japan)
17:40 556 Dual Workfunction CMOS High-k - Metal Gates for High Performance Logic Technologies R. Jammy (IBM Corporation), V. Narayanan and E. Cartier (IBM)
 

Thursday, October 20, 2005

Sacramento, Level 2

Electrical and Reliability Characterization I

Co-Chairs: M. Houssa & S.C. Song
TimeAbs#Title and Authors
08:00 557 Composition Dependence of Physical and Electrical Properties of HfSiON Films as Alternative Gate Dielectrics A. Nishiyama, M. Koike, Y. Kamimuta, M. Suzuki, T. Ino and M. Koyama (Toshiba Corporation)
08:30 558 Determination of the Channel Doping Density in MOS Devices with High-K Gate Dielectrics D. Reddy and S. Kar (Indian Institute of Technology, Kanpur)
08:50 559 Study of Charge and its Effect on the Inversion Layer Mobility of HfO2 Gate Stacks Z. Zhang and S. Campbell (University of Minnesota)
09:10 560 Charge Trapping, Negative Bias Temperature Instability (NBTI) and Breakdown related Reliability Issues in High k /Gate Dielectric Stacks S. Zafar, A. Vayshenker, A. Callegari, E. Gusev, V. Narayanan and G. Singco (IBM)
 

High-K Transistor Performance

Co-Chairs: M.F. Li & H. Iwai
TimeAbs#Title and Authors
10:00 561 High Performance Metal Gate CMOSFETs with Aggressively Scaled Hf-based High-k S. Song (SEMATECH), Z. Zhang (SEMATECH, TI Assignee), C. Huffman, S. Bae, J. Sim (SEMATECH), P. Kirsch (IBM assignee to SEMATECH), P. Majhi (SEMATECH), N. Moumen (SEMATECH, IBM Assignee) and B. Lee (SEMATECH)
10:30 562 Ion-Enhanced Plasma Etching of Metal Oxides in Chlorine Based Plasmas R. M. Martin (UCLA), M. Sawkar (University of California, Los Angeles), H. Blom (Uppsala University) and J. P. Chang (University of California)
10:50 563 Influence of Ta(N) Metal Gate Microstructure on Its Etch Properties D. Shamiryan, V. Paraschiv, Z. Tokei and W. Boullart (IMEC)
11:10 564 Wet Etch Characteristics of Hf-silicates M. Claes, V. Paraschiv, D. Dictus, T. Conard, W. Boullart, S. Vanhaelemeersch and S. De Gendt (IMEC)
11:30 565 HfSiON Gate Dielectrics for hp45 Node and Beyond Y. Nara, S. Inumiya (Semiconductor Leading Edge Technologies), K. Torii (Selete (present adress Hitachi)) and K. Nakamura (Semiconductor Leading Edge Technologies)
12:00 566 CMOS Integration Issues with High-K/Metal Gate Stack D. Kwong (Institute of Microelectronics)
 

Electrical and Reliability Characterization II

Co-Chairs: S. Zafar & M. Houssa
TimeAbs#Title and Authors
14:00 567 Charge trapping effects in high-k transistors G. Bersuker, J. Sim, C. Young, R. Choi, R. Harris, B. Lee, P. Zeitzoff (sematech), G. Brown (smeatech) and H. Huff (SEMATECH)
14:30 568 Effect of Nitridation on 1/f Noise in n-MOSFETs with High-k Dielectric P. Srinivasan (New Jersey Institute of Technology), E. Simoen, L. Pantisano, C. L. Claeys (IMEC) and D. Misra (New Jersey Institute of Technology)
14:50 569 Efficient Calculation of Quasi-Bound State Tunneling through Stacked Dielectrics M. Karner (Institute for Microelectronics), A. Gehring (AMD Saxony LLC & Co. KG), S. Holzer, H. Kosina and S. Selberherr (Institute for Microelectronics)
15:10 570 Implications of Non-Linear Poole-Frenkel Plots on High-k Dielectric Leakage W. R. Harrell, T. Cordella and K. Poole (Clemson University)
15:30 571 Charge Trapping and Bias Temperature Instability in High-k Dielectric CMOS Transistors M. Li, C. Zhu, C. Shen, X. Yu, Y. Feng, Y. Yeo, A. Chin (National University of Singapore) and D. Kwong (Institute of Microelectronics)
 

Electrical and Reliability Characterization III

Co-Chairs: G. Bersuker & D.L. Kwong
TimeAbs#Title and Authors
16:20 572 Charge Trapping: A Major Reliability Challenge for High-k Gate Dielectrics T. Ma, S. Wang, H. Bu and L. Song (Yale University)
16:50 573 Salient Features in the Capacitance Characteristics of Ultrathin High-K Devices S. Kar, D. Reddy and S. Rawat (Indian Institute of Technology, Kanpur)
17:10 574 Electrical Breakdown and Reliability of Metal Gate - La2O3 Thin Films after Post Deposition Annealing in N2 J. Molina, K. Tsutsui and H. Iwai (Tokyo Institute of Technology)
17:30 575 Evidence of Deep Energy States from Low Temperature Measurements and its Role in Charge Trapping in Metal Gate/Hf-Silicate Gate Stacks N. A. Chowdhury, P. Srinivasan and D. Misra (New Jersey Institute of Technology)
17:50 576 Asymmetric Distribution of Charge Trap in HfO2-based High-k Gate Dielectrics K. Higuchi (Univ. Tsukuba), T. Naito, A. Uedono (Univ of Tsukuba), K. Shiraishi (University of Tsukuba), K. Torii (selete), M. Boero (Univ of Tsukuba), T. Chikyow (NIMS), S. Yamasaki (AIST), K. Yamada (Waseda University), R. Hasumuma and K. Yamabe (Univ of Tsukuba)
18:10 577 Indication of Lateral Nonuniformity of Effective Oxide Charges in High-k Gate Dielectrics by Terman's Method S. Huang and J. Hwu (National Taiwan University)