208th ECS Meeting - Los Angeles, California

October 16 - October 21, 2005

PROGRAM INFORMATION
 

H1 - Copper Interconnections, Low-k Interlevel Dielectrics, and New Contact and Barrier Metallurgies/Structures

Dielectric Science and Technology/Electronics and Photonics/Electrodeposition
 

Monday, October 17, 2005

San Gabriel B, Lobby Level

Copper Deposition

Co-Chairs: G. Mathad & K. Kondo
TimeAbs#Title and Authors
10:00 578 Materials Characterization of "Seedless" Copper Electrochemical Deposition on Ultra-Thin Air Exposed TaN and Ru Barrier Layers N. Lay (RPI) and D. Duquette (Rensselaer Polytechnic Institute)
10:20 579 Electroless Plated CoWB and COWPB Films for Copper Cap Applications V. Mathew, L. Michaelson, S. Garcia, E. Acosta, D. Werho, R. Gregory (Freescale Semiconductor, Inc.), Z. Jiang and K. Kim (Freescale Semiconductor, Inc)
10:40 580 Leveling with the Step Potential in Damscene Cu Electrodeposition S. Cho and J. Kim (Seoul National University)
11:00 581 Comparative Study of Additive impact on copper deposition with Low and Medium Acid Electrolytes S. Dasilva (STMicrolelectronics), P. Haumesser, T. Mourier, D. Fossati, M. Cordeau (CEA Leti), K. Haxaire, G. Passemard (STMicroelectronics) and E. Chainet (LEPMI-ENSEEG)
11:20 582 Prediction of Microstructure Evolution of Electroplated Copper Films P. Freundlich (ON Semiconductor Czech Republic)
11:40 583 In Situ AFM Observation of the Morphology of Copper Metallization during Electrodeposition M. Breathnach, S. Ahmed, S. Nakahara and D. N. Buckley (University of Limerick)
12:00 584 Electroless Deposition of Co-alloys for Copper Interconnect Encapsulation Z. Hu, T. Ritzdorf (Semitool, Inc.), N. Petrov and C. Witt (Cookson Electronics-Enthone)
 

Etch Stop/Barrier Films

Co-Chairs: M. Engelhardt & P. Kohl
TimeAbs#Title and Authors
14:00 585 Electrical Properties of Organic and Silicon Carbide Etch Stop Layers in Copper/Porous MSQ Structures G. C. Smith, R. McGowan, S. Hosali, L. Smith and K. Pfeifer (SEMATECH)
14:20 586 The Investigation on the Electrical Properties of a-SiCO:H as a Diffusion Barrier to Copper J. Heo and H. Kim (Seoul National University)
14:40 587 Fabrication of the Electroless NiMoB Films as a Diffusion Barrier Layer on the Low-k Substrate M. Yoshino, M. Yoshino, T. Masuda, S. Wakatsuki, J. Sasano, I. Matsuda, Y. Shacham-Diamand and T. Osaka (Waseda University)
15:00 588 Novel Barrier Materials for Seedless Superfill D. Josell, T. Moffat, D. Wheeler (NIST), T. Aaltonen, M. Leskala and M. Ritala (University of Helsinki, Finland)
15:20 Intermission (20 Minutes)
 

Reliability

Co-Chairs: H. Rathore & M. Engelhardt
TimeAbs#Title and Authors
15:40 589 Electromigration in sub-micron Copper Interconnects in Low-k Dielectrics B. Agarwala (IBM System and Technology Group), K. Chanda (International Business Machines), H. S. Rathore, D. Nguyen, C. Hu, P. Mclaughlin and J. Demarest (IBM)
16:00 590 Stress Evolution in Electrodeposited Copper Metallization during Room-Temperature Aging T. Chowdhury, S. Ahmed, D. N. Buckley, M. Laugier and S. Nakahara (University of Limerick)
16:20 591 Degradation of Cu/Ta-N/Ta/Low-k Structure by Outgassing of Low-k Dielectrics C. Chang (National Cheng Kung University), S. JangJian (Taiwan Semiconductor Manufacturing Company) and J. Chen (National Cheng-Kung University)
16:40 592 Investigating the Role of Stress in SOG-filled Shallow- Trench-Isolation Structures of sub-70nm Device A. Das, A. Klipp, H. Sperlich, I. Bartusseck, R. Nitsche and O. Kuehn (Infineon Dresden)
 

Tuesday, October 18, 2005

San Gabriel B, Lobby Level

Low-k and Planarization

Co-Chairs: H. Rathore & G. Banerjee
TimeAbs#Title and Authors
08:40 593 Porogen Extraction Mechanisms in Spin-on ULK Materials A. Zenasni (LETI), F. Ciaramella, V. Jousseaume, C. Le Cornec (CEA/LETI) and G. Passemard (STMicroelectronics)
09:00 594 Development of Full Sequence Electrochemical Mechanical Polishing for Avvanced Copper Planarization R. Jia (Applied Materials Inc.), Y. Wang, Z. Wang, S. Tsai, J. Diao, D. Mao (Applied Materials, Inc.), L. Karuppiah and L. Chen (Applied Materials)
09:20 595 Fan Formation During Cu-CMP - A Galvanic Corrosion Problem? G. Banerjee (Air Products & Chemicals Inc.)
09:40 Intermission (20 Minutes)
 

Interconnect Processes

Co-Chairs: G. Banerjee & H. Rathore
TimeAbs#Title and Authors
10:00 596 Air-Gaps for Ultra Low-k Interconnects Fabricated with Hardened Sacrificial Polymer P. A. Kohl, S. Park (Georgia Institute of Technology), J. Krotine (Promerus LLC) and S. Allen (Georgia Institute of Technology)
10:20 597 Fabrication of Deep Sub-Lithographic Al-Based Nano Interconnects Utilizing a Wet Chemical Hard Mask Trim Process M. Engelhardt, G. Steinlesberger and U. Kirchner (Infineon Technologies)
10:40 598 Electrografting, A Unique Wet Technology for Seed and Direct Plating in Copper Metallization J. Gonzalez, F. Raynal, H. Monchoix, A. Ben Hamida, J. Daviot, P. Rabinzohn and C. Bureau (Alchimer S.A.)
11:00 599 Low Temperature ALD MoN for Applications in Nanoscale Devices W. Zeng, X. Wang (University at Albany - SUNY), S. H. Meiere (Praxair) and E. Eisenbraun (University at Albany, The State University of New York)
11:20 600 Sidewall Profile Control During Plasma Etching of Copper G. Liu and Y. Kuo (Texas A&M University)
 

Pasadena, Lower Lobby Level

Tuesday Evening Poster Session

Co-Chairs: G. Mathad & H. Rathore
TimeAbs#Title and Authors
o 601 Ultra Thin Copper Film Deposition by Metal-Organic Chemical Vapor Deposition on Ruthenium Thin Film D. Kwak, S. Kang and H. Lee (Korea Advanced Institute of Science and Technology)
o 602 FTIR Study of Porous Low Dielectric Constant SiOC Film under Various Post-Deposition Curing Conditions M. D. Sardo (STMicroelectronics), A. Lagha (STMicroelectronics, Crolles), A. Humbert, M. Desbois (Philips Semiconductors, Crolles) and N. Laurent (Accent Optical Technologies, Grenoble)