208th ECS Meeting - Los Angeles, California

October 16 - October 21, 2005

PROGRAM INFORMATION

 

J1 - State-of-the-Art Program on Compound Semiconductors XLIII (SOTAPOCS XLIII)

Electronics and Photonics

 

Monday, October 17, 2005

San Gabriel A, Lobby Level

Co-Chairs: A.G. Baca & J. Wang
TimeAbs#Title and Authors
10:05 705 Progress on InAs-Based Quantum Dot Light Emitters J. Chyi, W. Liu, T. Hsieh, H. Hsu, W. Chang, W. Chen and W. Chang (National Central University)
10:30 706 Wide Bandgap Technology for Radio-Frequency Applications B. Luo and K. Boutros (Rockwell Scientific Company)
10:55 707 Progress And Potentials In Nitride-Based Dilute Magnetic Semiconductors I. T. Ferguson, M. H. Kane, A. Asghar and M. Strassburg (Georgia Institute of Technology)
11:20 708 Influence of Dislocations on InP-Based Transistors With High Indium Content (0.48 < XIn < 1) InxAl1-xAs/ InxGa1-xAs Device Layers R. Sandhu (NGST)
 
Co-Chairs: J. Chyi & B. Luo
TimeAbs#Title and Authors
14:00 709 Micro-Raman Studies of Thermal Stress Effects in GaN Heteroepitaxial Layers and Self-heating Effects in AlGaN/GaN HEMT Structures J. Kim, J. Freitas, J. Mittereder, E. Glaser, D. Katzer (Naval Research Laboratory), S. Pearton, F. Ren (University of Florida), S. Guo and B. Albert (Emcore Corporatoin)
14:30 710 Indium Phosphide Double Heterojunction Bipolar Transistors with T-Shaped Emitter Metal Features having Cutoff Frequencies in Excess of 200 GHz A. Fung, L. Samoska, J. Velebir, P. Siegel (JPL), M. Rodwell, V. Paidi, Z. Griffith (UCSB) and R. Malik (RJM Semiconductor)
14:50 711 Novel Oxide Passivation of AlGaN/GaN High Electron Mobility Transistor And Reliability of Passivation T. Anderson, B. Gila, M. Hlad, C. Abernathy, S. Pearton and F. Ren (University of Florida)
15:10 712 Simulation and Fabrication of ZnMgO/ZnCdO and ZnO/GaN Light-Emitting Diodes S. Han, H. Yang, Y. Heo, K. Baik, D. Norton, S. Pearton, F. Ren (University of Florida), A. Osinsky, J. Dong, B. Hertog, A. Dabiran, P. Chow (SVT Associates, Inc.), L. Chernyak (University of Central Florida), T. Steiner (AFOSR), C. Kao and G. Chi (National Central University)
15:30 Intermission (15 Minutes)
15:45 713 UHV-EC Studies of Electrodeposition via EC-ALE on InP(100) M. Muthuvel, D. Vairavapandian, T. Hayes (University of Georgia) and J. L. Stickney (The University of Georgia)
16:05 714 Solving the GaAs Corrosion Problem H. Shen, L. Luu-Henderson, S. O'Neil, S. Tiku and R. Ramanathan (Skyworks Solutions, Inc.)
16:25 715 Wet-cleaning and Surface Characterization of Si1-xGex Alloys (x = 0.2 to 0.5) After Polishing: Applications for SGOI and Strained-silicon Structures A. Abbadie (Soitec/CEA-LETI), J. Hartmann (CEA-LETI) and P. Besson (ST Microelectronics)
 

Tuesday, October 18, 2005

San Gabriel A, Lobby Level

Co-Chairs: P. Chang & J. Kim
TimeAbs#Title and Authors
08:30 716 Dry Etching of Sub-Micron Emitter in InP Heterojunction Double Bipolar Transistor Using Inductively Coupled Plasma P. S. Nam (Northrop Grumman), P. Chang and D. Sawdai (Northrop Grumman Space Technology)
08:50 717 Thermal Simulations of 3-D Integrated Multi-Chip Module with GaN Power Amplifier and Si Modulator T. Anderson, F. Ren, L. Covert, J. Lin and S. Pearton (University of Florida)
09:10 718 Photoelectrochemical (PEC) Etching of n-GaN in H3PO4 and KOH Electrolytes D. N. Buckley, C. Heffernan (University of Limerick) and C. O'Raifeartaigh (Waterford Institute of Technology)
09:30 719 Material and Electrical Properties of Ultrathin HfO2 Films on 4H-SiC (0001) C. Tanner, J. Choi (UCLA) and J. P. Chang (University of California)
09:50 Intermission (20 Minutes)
10:10 720 Novel Tungsten Boride based High Thermal Stability Ohmic Contacts to n-GaN R. Khanna, S. Pearton, F. Ren (University of Florida), C. Kao, G. Chi (National Central University) and I. Kravchenko (University of Florida)
10:30 721 Multi-Scale Analysis of GaAs MOVPE Process by Using Wide-Stripe Selective Area Growth and Computational Fluid Dynamics Simulation H. Song (The University of Tokyo), I. Im (Iksan National College, Korea), M. Sugiyama, Y. Nakano (The Univ. of Tokyo) and Y. Shimogaki (The Univ. of Tokyo, Japan)
10:50 722 Ohmicity of Au-NiO Composite Thin Film Contacting to P-type GaN J. Yang (National Cheng Kung University) and J. Chen (National Cheng-Kung University)
11:10 723 Characterization of Polyimides as a Gate Insulator for Organic Transistors S. Maeda (Nissan Chemical Industries, Ltd.) and G. Ono (Nissan Chemical Industries, LTD)
11:30 724 Electrical Anisotropy of W-doped Rhenium Diselenide S. Hu (Tung Nan Institute of Technology) and J. Liang (National Taiwan Ocean University)