208th ECS Meeting - Los Angeles, California

October 16 - October 21, 2005



K1 - Physics and Chemistry of SiO2 and the Si-SiO2 Interface V

Electronics and Photonics/Dielectric Science and Technology


Monday, October 17, 2005

San Pedro, Lobby Level

Plenary Session

Co-Chairs: H.Z. Massoud & D. Misra
TimeAbs#Title and Authors
10:00 725 Gate Dielectrics for Advanced Semiconductor Devices: Thermally-Grown SiO2 is a Very Difficult Act to Follow G. Lucovsky (NC State University)
10:40 726 Prospect of High-k/Metal Gate Stack Technology for Future CMOS Devices B. Lee, K. Paul, P. Majhi, S. Song, R. Choi and G. Bersuker (SEMATECH)
11:20 727 Ordered Structure in the Thermal Oxide Layer on Silicon Substrates T. Shimura, E. Mishima, H. Watanabe, K. Yasutake (Osaka University), M. Umeno (Fukui University of Technology), K. Tatsumura, T. Watanabe, I. Ohdomari, K. Yamada (Waseda University), S. Kamiyama, Y. Akasaka, Y. Nara and K. Nakamura (Semiconductor Leading Edge Technologies)

Ultrathin Dielectric Technology

Co-Chairs: D. Misra & T. Hattori
TimeAbs#Title and Authors
14:00 728 Novel Fabrication Process to Realize Ultra-Thin (EOT = 0.7 nm) and Ultra-Low-Leakage SiON Gate Dielectrics K. Muraoka, D. Matsushita, K. Kato, Y. Nakasaki, S. Inumiya, K. Eguchi and M. Takayanagi (Toshiba Corporation)
14:40 729 Quantitative Analysis of Reaction of Hydrogen-Terminated Si(100) with Oxygen during Heating M. Morita, S. Urabe, K. Nishimura, S. Nishikawa and S. Morita (Osaka University)
15:00 730 Focused Electron Beam Induced Deposition of Silicon Oxide H. D. Wanzenboeck, M. Fischer (University of Technology of Vienna), J. Gottsbachner, S. Mueller, W. Brezna, M. Schramboeck and E. Bertagnolli (Institute of Solid State Electronics)
15:20 Intermission (20 Minutes)

San Pedro, Lobby Level

Co-Chairs: T. Hattori & I. Baumvol
TimeAbs#Title and Authors
15:40 731 Improvement in Characteristics of Thin Film Transistors by High Pressure Steam Annealing N. Yamamoto (Ishikawajima-Harima Heavy Industries Co., Ltd.), A. Yoshinouchi, M. Masaki and T. Watanabe (Ishikawajima-Harima Heavy Industries Co., Ltd)
16:00 732 Thermal Stability of LaOx/Si Interfacial Transition Layer H. Nohira, T. Yoshida, H. Okamoto (Musashi Institute of Technology), J. Ng, Y. Kobayashi, S. Ohmi, H. Iwai (Tokyo Institute of Technology), E. Ikenaga, K. Kobayashi (JASRI/SPring-8), Y. Takata (RIKEN/SPring-8) and T. Hattori (Musashi Institute of Technology)
16:20 733 Photodetection Characteristics of SnO2-Ultrathin SiO2-Si Structures M. Morita, M. Chikamoto, H. Hashimoto, K. Horikoshi, A. Shinozaki, S. Morita, K. Arima and J. Uchikoshi (Osaka University)
16:40 734 Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress C. Hollauer, H. Ceric and S. Selberherr (Institute for Microelectronics)
17:00 735 Influence of Silicon Ion Implantation on the Dielectric Properties of Al-Ti Composite Oxide Film J. chen, Z. feng and B. Yang (University of Electronic Science and Technology of China)

Tuesday, October 18, 2005

San Pedro, Lobby Level


Co-Chairs: I. Baumvol & J. Stathis
TimeAbs#Title and Authors
09:00 736 A Statistical Mechanics Model for NBTI in Oxides S. Zafar, J. Stathis, A. Callegari and T. Ning (IBM)
09:40 737 On Saturation of Negative Bias Temperature Degradation M. A. Alam (Purdue University)
10:20 738 New NBTI Lifetime Prediction Method for Ultra Thin SiO2 Films K. Watanabe (Tohoku University), R. Kuroda (Graduate School of Engineering, Tohoku University), A. Teramoto (Tohoku University), S. Sugawa (Graduate School of Engineering, Tohoku University) and T. Ohmi (Tohoku University)

Ultrathin Oxide Breakdown

Co-Chairs: I. Baumvol & T. Hattori
TimeAbs#Title and Authors
10:40 739 Characterization of Charge Trapping and Dielectric Breakdown of HfAlOx/SiON Dielectric Gate Stack Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki (Hiroshima University), T. Kawahara and K. Torii (Semicondutor Leading Edge Technologies, Inc.)
11:00 740 Progressive Breakdown in Ultra-Thin Gate Oxynitrides S. A. Lombardo (CNR) and F. Palumbo (CNR-IMM)
11:20 741 Roles of Predominant and Subordinate Carriers in Breakdown Mechanism of High-k Gate Dielectrics Studied with HfAlOX/SiO2 Stacks K. Okada (MIRAI-ASET), H. Ota (MIRAI-ASRC-AIST), A. Ogawa (MIRAI-ASET), W. Mizubayashi, T. Horikawa (MIRAI-ASRC-AIST), H. Satake, T. Nabatame (MIRAI-ASET) and A. Toriumi (The University of Tokyo)
11:40 742 Characterization of Microstructural and Oxide Damage of Breakdown Spot in Mosfets Using Nano-Analytical Techniques K. Pey (Nanyang Technological University), C. Tung and L. Tang (Institute of Microelectronics)

Ultrathin Oxide Reliability

Co-Chairs: H.Z. Massoud & D. Misra
TimeAbs#Title and Authors
14:00 743 New Features on the SILC in MOSFETs with Ultrathin Oxides D. Bauza (IMEP-ENSERG), G. Ghibaudo, F. Lime and F. Rahmoune (IMEP)
14:20 744 Annealing Effect On Reliability Study For Deuterium Implanted Silicon T. Kundu and D. Misra (New Jersey Institute of Technology)
14:40 745 Impact of Plasma Nitridation Method on Vfb Shift and the Reliability of CMOSFETs D. Kim (Samsung Electronics Co. Semiconductor Business), J. Heo (Semiconductor R&D center, Samsung electronic co., LTD.), B. Koo (Samsung Electronics Co. Semiconductor Business) and M. Cho (Korea Research Institute of Standards and Science Surface Analysis Group)
15:00 746 The Influence of Complimentary Contamination on Oxide Integrity J. J. Naughton and J. Towner (AMI Semiconductor)
15:20 Intermission (20 Minutes)

Ultrathin Oxide Characterization

Co-Chairs: D. Misra & I. Baumvol
TimeAbs#Title and Authors
15:40 747 Morphological Change in Surface and Interface during Ultrathin SiO2 Film Growth R. Hasunuma, J. okamoto (University of Tsukuba), N. TOKUDA (National Institute of Advanced industrial Science and Technology) and K. Yamabe (Univ of Tsukuba)
16:00 748 High Resolution X-Ray Photoelectron Spectroscopy Study on Si3N4/Si Interface Structures and Its Correlation with Hysteresis in C-V Curves M. higuchi, A. Teramoto (Tohoku University), M. Komura (Graduate School of Engineering, Tohoku University), S. Shinagawa (Musashi Institute of Technology), E. Ikenaga (JASRI/SPring-8), H. Nohira (Musashi Institute of Technology), K. Kobayashi (JASRI/SPring-8), T. Hattori (New Industry Creation Hatchery Center, Tohoku University), S. Sugawa (Graduate School of Engineering, Tohoku University) and T. Ohmi (Tohoku University)
16:20 749 Characterization of Tunneling Current Through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method T. Hirokane, N. Yoshii, T. Okazaki, S. Urabe, K. Nishimura, S. Morita and M. Morita (Osaka University)
16:40 750 On the Effects of Carrier Tunneling on the Capacitance-Voltage Characteristics of Ultrathin-Oxide MOSFETs H. Z. Massoud (Duke University, Box 90291), M. Shen and J. Jopling (Duke University)