208th ECS Meeting - Los Angeles, California

October 16 - October 21, 2005

PROGRAM INFORMATION

 

L1 - Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI

Electronics and Photonics/Sensor

 

Tuesday, October 18, 2005

Santa Barbara C, Lobby Level

Co-Chairs: R. Fitch & P. Shen
TimeAbs#Title and Authors
14:00 799 Very Low Pressure Magnetron Reactive Ion Etching of GaN Using Dichlorofluorometane (Halocarbon-12) P. Batoni (University of North Carolina at Charlotte), E. Stokes (The University of North Carolina), K. Patel, C. Burkhart, T. Shah, V. Iyengar, M. Ahrens (The University of North Carolina at Charlotte), T. Morton (The University of North Carolina at Charlotte & Armament and Technical Products, Research, General Dynamics), B. Martin and S. Bobbio (The University of North Carolina at Charlotte)
14:30 800 Combinatorial Study of Nickel-Gold P-Contacts for Blue Indium Gallium Nitride Light-Emitting Diodes M. Ahrens (The University of North Carolina at Charlotte), E. Stokes (The University of North Carolina), A. Davydov, P. Schenck (National Institute of Standards and Technology), A. Motayed (University of Maryland), T. Harris and T. Morton (University of North Carolina at Charlotte)
14:50 801 Epitaxial Growth and Doping of GaN(001) Layers Grown on Si(111) Using Surface Reconstruction Induced Epitaxy B. Martin (The University of North Carolina at Charlotte), C. Sykes (University of North carolina), M. Sardela Jr. (Universityof Illinois at Urbana-Champaign) and M. Hasan (Univ. Of North Carolina)
15:10 802 Hydrogen Sensitive Schottky Diodes on Free-standing GaN L. Voss, H. Wang, S. Pearton and F. Ren (University of Florida)
15:30 Intermission (15 Minutes)
15:45 803 Algan Light Emitters Based on Nanoscale Compositional Inhomogeneties M. Wraback, G. Garrett, A. Sampath, C. Collins, W. Sarney and H. Shen (U.S. Army Research Laboratory)
16:15 804 Enhanced UV Emission by Means of Infrared Optical Pumping in UV Light Emitting Diodes P. Batoni (University of North Carolina at Charlotte), E. Stokes (The University of North Carolina), V. Yang, J. Pagan (The University of North Carolina at Charlotte), R. Hudgins (UNC Charlotte) and S. LeBoeuf (GE Global Research)
16:35 805 Growth of Single Crystalline Cubic SiC on Si Using Compliant Nanoscale Seed Crystals M. Hasan (Univ. Of North Carolina), K. Cherukuvada (University of North carolina) and M. Sardela Jr. (Universityof Illinois at Urbana-Champaign)
 

Wednesday, October 19, 2005

Santa Barbara C, Lobby Level

Co-Chairs: E. Stokes & K. Shiojima
TimeAbs#Title and Authors
10:00 806 Dipole Engineering in Nitride-based HEMTs T. Palacios, S. Rajan, L. Shen, A. Chakraborty, S. Keller, S. DenBaars and U. Mishra (University of California - Santa Barbara)
10:30 807 Determination of Band Offsets at the AlN/SiC Interface J. Choi (UCLA), R. Puthenkovilakam (Intel) and J. P. Chang (University of California)
10:50 808 Properties of Porous GaAs Substrate for III-N Epitaxy V. V. Kidalov (Berdyansk State pedagogical University), G. Suckach (Physics semiconductors institute, Ukraine), L. Beji (Laboratoire de Physique et Chimie des Linterfaces, Fac-ulte , Tunisia), A. Revenko and A. Bayda (Berdyank state university)
11:10 809 Homoepitaxial Growth of Iron Doped Semi-Insulating 4H-SiC by Bis-Trimethylsilylmethane and T-Butylferrocene Precursors H. Song, J. Moon, J. Yim and H. Kim (Seoul National University)
11:30 810 Highly Sensitive Hydrogen Sensor Using Pt Nanoparticles Coated ZnO Single- and Multi- Nanowires H. Wang, B. Kang and F. Ren (University of Florida)
 
Co-Chairs: P. Asbeck & J. Han
TimeAbs#Title and Authors
14:00 811 Effect of T-Shaped Gate Structure on RF Characteristics of AlGaN/GaN Short-Gate HEMTs K. Shiojima, T. Makimura (NTT Photonics Laboratories), T. Maruyama (NTT Advanced Technology), T. Suemitsu, N. Shigekawa, M. Hiroki and H. Yokoyama (NTT Photonics Laboratories)
14:20 812 Simulations of Field Plate Effects on Surface Charge in AlGaN/GaN HFETs A. Conway and P. Asbeck (UCSD)
14:40 813 Design, Characterization and Analysis of AlGaN/GaN HEMTs with Field Plate Gate Structures via Physical Device Simulation M. J. Yannuzzi (Air Force Research Laboratory), G. Jessen, N. Moser Lt., A. Crespo, R. C. Fitch, J. Gillespie, D. Langley Lt. and M. Williams Lt. (Air Force Reseach Laboratory)
15:00 814 AlGaN/GaN HEMTs with Recessed Ohmic Electrodes on Si Substrates K. Kaifu, J. Mita, M. Ito, Y. Sano (Oki Electric Industry), H. Ishikawa and T. Egawa (Nagoya Institute of Technology)
15:20 Intermission (20 Minutes)
15:40 815 X-ray and Electrical Characterization of Optimized Ti/Al/Ti/Au Ohmic Contacts for AlGaN/GaN HEMTs J. Bardwell, S. Haffouz, H. Tang and R. Wang (National Research Council)
16:00 816 Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT) H. Wang, B. Kang and F. Ren (University of Florida)