209th ECS Meeting - Denver, Colorado

May 07 - May 12, 2006

PROGRAM INFORMATION
 

G1 - Solid-State Joint General Poster Session

Dielectric Science and Technology/Electronics and Photonics/Energy Technology/High Temperature Materials/Luminescence and Display Materials/Sensor
 

Tuesday, May 9, 2006

Exhibit Hall, Concourse Level

Tuesday Evening Poster Session

Co-Chairs: C. L. Claeys, M. J. Deen, and M. Kubota
TimeAbs#Title and Authors
o 340 Optical Properties of Silicon - SiO2 Superlattice R. -. Tsu (UNC-Charlotte) and K. Daneshvar (university of North Carolina)
o 341 Usefulness of the Instantaneous Mass-charge Ratio for Elucidating the Ions Role in the Stabilization and Dissolution Processes in Prussian Blue Films F. Vicente, J. Agrisuelas (University of Valencia), C. Gabrielli (CNRS), J. García-Jareño, D. Giménez-Romero (University of Valencia) and H. Perrot (CNRS-LISE)
o 342 Peculiarities of Electroless Copper Deposition Processes Using Different Cu(II) Chelating Agents E. Norkus (Institute of Chemistry)
o 343 Application of Porous Low-K in a High Frequency Transmission Line Interconnect K. Fang (Institute Of Electronics), B. Tsui (Institute Of Electronics, National Chiao-Tung University) and K. Melzer (Semiconductor Technology and Microsystems Laboratory, Dresden University of Technology)
o 344 Effect of Tin-doped Indium oxide film thickness on the Diffusion Barrier between Silicon and Copper W. Chen (National Pingtung University of Science and Technology) and W. Liu (National Formosa University)
o 345 Peracetic Acid as Active Species in Mixtures for Selective Etching of SiGe/Si Layer Systems - Aspects of Chemistry and Analytics B. Kolbesen (Johann Wolfgang Goethe-University Frankfurt am Main) and M. Guder (Johann Wolfgang Goethe-University)
o 346 Three Dimensional Laser-assisted Atom-probe Tomography: Advanced Analysis of Si Nanostructures K. Thompson, D. Larson, J. Bunton, R. Ulfig, T. Prosa, J. Sebastian, J. Olson, D. Lens and T. Kelly (Imago Scientific Instruments)
o 347 Iron Diffusion Profile Studies by Surface Photo-voltage for Silicon Iron Implanted Wafers after Rapid Thermal Anneal. I. Rapoport, P. Taylor, S. Kim and B. Orschel (SUMCO USA)
o 348 Iron Contaminants Transport from Silicon Carbide Hardware during Thermal Treatment at Elevated Temperatures I. Rapoport and P. Taylor (SUMCO USA)
o 349 Proton Conduction in In3+-doped Tin Phosphates with Various P/(Sn+In) Ratios M. Nagao, T. Kamiya, P. Heo, T. Hibino, M. Sano (Nagoya University) and A. Tomita (National Institute of Advanced Industrial Science and Technology (AIST))
o 350 Electronic Transport in Single Crystals of Gd-doped Ceria E. Ruiz-Trejo (UNAM) and J. Maier (Max-Planck-Institut für Festkörperforschung)
o 351 Preparation and Characterization of Composite Electrodes Comprising of Poly(3,4-ethylenedioxythiophene)- Poly(styrene sulfonic acid) and Hydrous Ruthenium Oxide T. Wen and L. Huang (National Cheng Kung University)
o 352 Characterization of Surface Preparation for Epitaxial SiGe Process using X-ray Reflectivity D. Agnihotri (Jordan Valley Semiconductors, Inc), C. Lee, H. Tai, A. Chen, M. Ma (UMC), B. Steven, J. Gallegos, J. O'Dell and S. Kalegaonkar (Jordan Valley Semiconductors)
o 353 Hydrogen Diffusion and Trapping in Boron Implated Crystalline Silicon M. Ghita, R. Turner, A. Hunniford (Queen's University Belfast), R. McCullough (Queen's Universoty Belfast), H. Gamble, W. Graham and M. Finnis (Queen's University Belfast)
o 354 Self-seeding Crystallization of Silicon Thin Films Using Continuous-Wave Laser S. Kuroki, S. Fujii, K. Kotani and T. Ito (Tohoku University)
o 355 Intrinsic Gettering Effect of Bulk Micro Defect on Oxide Integrity of Flash Memory T. Kang, K. Hee Sung, P. Young Soo, C. Kyoo Chul and K. Tae Sung (Samsung Electronics)
o 356 Isolated Carbon Confinement Methodology for Ultrathin Boron Profiles With Enhanced Conductivity in Sub-50 NM Strained Layers of Silicon Germanium D. Enicks (ATMEL Corp.) and G. Oleszek (University of Colorado at Colorado Springs)
o 357 Thermal Redistribution of Oxygen and Carbon in Sub-50 NM Strained Layers of Boron Doped SiGeC D. Enicks (ATMEL Corp.) and G. Oleszek (University of Colorado at Colorado Springs)
o 358 Photoluminescence as Complimentary Technique for Metals Contamination Monitoring after Thermal Processing I. Rapoport, P. Taylor, S. Kim and B. Orschel (SUMCO USA)
o 359 Self-seeding Crystallization of Silicon Thin Films Using Continuous-Wave Laser S. Kuroki, S. Fujii, K. Kotani and T. Ito (Tohoku University)
o 360 Drivability Enhancement of MOS Transistors Fabricated on Nano-Grating Silicon Wafers T. Ito, S. Kuroki and K. Kotani (Tohoku University)