209th ECS Meeting - Denver, Colorado

May 07 - May 12, 2006

PROGRAM INFORMATION
 

J1 - Electrochemical Processing in ULSI and MEMS II

Electrodeposition
 

Monday, May 8, 2006

Plaza Ballroom D, Concourse Level

Progress and Future Challenges

Co-Chairs: L. Deligianni and T.P. Moffat
TimeAbs#Title and Authors
10:00 410 Current Challenges with Cu Interconnects P. R. Besser (Advanced Micro Devices, Inc.)
10:40 411 Copper Resistivity in Electrodeposited Dual Damascene Interconnects - An Integrated Circuit Perspective N. Lustig (IBM System and Technology Group), B. Baker-O’Neal (IBM T. J. Watson Research Center), P. Flaitz, T. Standaert, P. DeHaven, A. Simon, T. Ko, S. Grunow (IBM System and Technology Group), J. Werking (Advanced Micro Devices), S. Greco, S. Sankaran (IBM System and Technology Group), H. Deligianni (IBM) and D. Edelstein (IBM T.J. Watson Research Division)
11:00 412 Advanced Electrochemical Processes for Sub-50 nm On-chip Metallization R. Akolkar, C. Cheng, R. Chebiam, A. Fajardo and V. Dubin (Intel Corporation)
11:20 413 Advances in Multifunctional I/O and Thermal Management of ICs P. Kohl, A. He and T. Spencer (Georgia Institute of Technology)
 

Electroless Deposition

Co-Chairs: L. Deligianni and T. Osaka
TimeAbs#Title and Authors
14:00 414 Applications of Electroless Plating to ULSI Interconnects T. Osaka, M. Yoshino and M. Hasegawa (Waseda University)
14:40 415 Electroless Deposition of Cu and Ag For ULSI Interconnect Fabrication J. Kim, C. Lee, A. Kim, S. Kim (Seoul National University) and S. Kim (DongbuAnam Semiconductor)
15:20 Intermission (20 Minutes)
15:40 416 Opportunities and Challenges for Electroless Metallization in VLSI Processing. T. Weidman, A. Shanmugasundram (Applied Materials, Inc.), K. Wijekoon, M. Stewart, Z. Zhu (Applied Materials), H. Fang (Applied Materials, Inc.) and S. Chu (Applied Materials)
16:20 417 Understanding the Initiation and Growth Variations of Electroless Cobalt Capping Layers at Different Features on Damascene Copper Interconnects Q. Chen, C. Valverde, N. Petrov, D. Stritch, R. Hurtubise (Enthone, Inc.) and C. Witt (Cookson Electronics - Enthone, Inc.)
16:40 418 Electroless Cobalt Deposition from Ammonia Borane Solutions. J. F. Rohan and L. C. Nagle (Tyndall National Institute)
17:00 419 Effect of Co(III) on Defectivity of Electroless Cobalt Capping Layers on Damascene Copper Interconnects Q. Chen, C. Valverde, P. Figura, V. Paneccasio, D. Stritch, R. Hurtubise (Enthone, Inc.), C. Witt (Cookson Electronics - Enthone, Inc.), H. Fang, T. Weidman and A. Shanmugasundram (Applied Materials, Inc.)
17:20 420 Deep Platinum Deposition on Medium and High-doping N-type Porous Silicon by Immersion Plating J. A. Brito-Neto, S. Araki and M. Hayase (Tokyo University of Science)
 

Tuesday, May 9, 2006

Plaza Ballroom D, Concourse Level

Copper Electrodeposition

Co-Chairs: J. Dukovic and T.P. Moffat
TimeAbs#Title and Authors
08:20 421 The Effect of Electrodeposited Copper Overburden Uniformity and Thickness on Post-Polish Planarity B. Baker-O'Neal (IBM), N. Lustig (IBM System and Technology Group), W. Tseng (IBM Microelectronics), P. Flaitz, T. Ko (IBM System and Technology Group) and H. Deligianni (IBM)
08:40 422 Leveler Molecular Weight and Concentration Impact on Damascene Copper Electroplating Bath Electrochemical Behavior and Film Properties J. D. Reid and J. Zhou (Novellus Systems)
09:20 423 Control of Overfill Bumps in Damascene Cu Electrodeposition S. Kim, D. Wheeler, D. Josell (National Institute of Standards and Technology) and T. Moffat (NIST)
09:40 Intermission (20 Minutes)
10:00 424 Effect of Electrolyte Acidity on Copper Plating Process Performance C. Witt (Cookson Electronics - Enthone, Inc.), X. Lin (Cookson Electronics - Enthone) and R. Carpio (SEMATECH-ATDF)
10:40 425 An In Situ Ellipsometric Study of the Competitive Adsorption of PEG-/Cl-/(SPS/MPS)on Cu M. L. Walker, L. Richter and T. Moffat (NIST)
11:00 426 Advanced Metrology and Control of Copper Electrochemical Deposition T. H. Bailey, Q. Wang and M. West (Metara Inc.)
11:20 427 Electrically Mediated Copper Electrodeposition for Interconnect Applications H. McCrabb, E. Taylor (Faraday Technology, Inc.) and R. Carpio (SEMATECH-ATDF)
11:40 428 In Situ AFM Observation of the Morphology of Copper Electrodeposited in the Presence of Bath Additives S. Ahmed, M. Breathnach, S. Nakahara and D. N. Buckley (University of Limerick)
 
Co-Chairs: B. Baker and J. Dukovic
TimeAbs#Title and Authors
14:00 429 Vacancy-Induced Film Cracking in Electrodeposited Copper S. Nakahara, S. Ahmed and D. N. Buckley (University of Limerick)
14:20 430 In Situ Stress Measurements During Copper Deposition G. R. Stafford and C. Beauchamp (NIST)
14:40 431 Effect of Seed Layers on the Internal Stress of Electroplated Sn-Cu Films M. Saito, H. Sasaki and T. Hommma (Waseda University)
15:00 432 Electrochemical Processing of Ultrathin Metallic Oxides Featuring in-situ Monitoring of Growth Stress Transitions J. Vanhumbeeck and J. Proost (Université Catholique de Louvain)
15:20 433 The Role of Surface Active States in Copper Electrodeposition in Acid Solution. L. D. Burke, C. Buckley and R. Sharna (University College Cork)
15:40 Intermission (20 Minutes)
16:00 434 The Effect of Suppressor on the Nucleation of Copper on Ruthenium Substrates B. Baker-O'Neal, M. Zheng, J. Kelly and H. Deligianni (IBM)
16:20 435 Silver Direct Electrodeposition on Ru Thin Film H. Koo, J. Kim (Seoul National University) and K. Kim (DongbuAnam Semiconductor)
16:40 436 Electrodeposition of Cu on Ta-based Layers J. Kelly, M. Zheng, C. Cabral Jr. and H. Deligianni (IBM)
17:00 437 Simulation and Experimental Results for Copper Deposition in a Moving Wafer Tool to Minimize Terminal Effects J. Lee (Faraday Technology), H. McCrabb, E. Taylor (Faraday Technology, Inc.) and R. Carpio (SEMATECH-ATDF)
17:20 438 Simultaneous AFM and Resistance Measurements on Electrodeposited Copper Films during Room Temperature Aging S. Ahmed, T. Tanaka-Ahmed, D. N. Buckley and S. Nakahara (University of Limerick)
17:40 439 Copper Electrodeposition on Diffusion Barrier Films- A Literature Review B. Pesic (University of Idaho)
 

Exhibit Hall, Concourse Level

Tuesday Evening Poster Session

Co-Chairs: L.Deligianni, J. Dukovic, T.P. Moffat and J.L. Stickney
TimeAbs#Title and Authors
o 440 Electroless Cobalt Thin Films Deposited onto Palladium Pre-activated Silicon Surfaces S. G. Santos, A. Hashimoto and G. Gozzi (University of São Paulo - EPUSP - PSI)
o 441 Electrochemical Investigation of Electroless Co-Based Solution for Cu Lines Capping Processes S. Chang, C. Wan, Y. Wang (National Tsing-Hua University), C. Shih, M. Tsai, S. Shue, C. Yu and M. Liang (TSMC)
o 442 In-situ Grain Growth Investigation of Copper Electrodeposits for ULSI H. Lee, H. Han, D. Kim, U. Lee, K. Oh (Seoul National University) and P. Cha (Kookmin University)
o 443 A New Method to Plate Ternary Alloy film for Forming Glass Products M. Yoshitake, E. Yanagisawa, N. Yoshida, A. Takenaka, T. Ohashi, Y. Segawa, H. Wakatsuki, H. Kameda and S. Kashiwabara (Asahi Glass Co., Ltd.)
o 444 Experimental Study of a Copper Pattern Plating Process: Influence of Bath Chemistry, Plating Parameters and Lithographic Pattern on within Die Plating Uniformity. L. Dumas, A. Broca and E. Serret (STMicroelectronics)
o 445 Numerical Simulation of Transient Natural Convection Developing a Vertical Plane Electrode S. Kawai, K. Nishikawa, Y. Fukunaka and S. Kida (Kyoto University)
o 446 A New Insight to Pseudocapacity of a Foreign Substrate During Galvanostatic Nucleation Y. Krishtop and V. Trofimenko (Dniepropetrovsk National University)
o 447 Reverse Selectivity Performance of Nano Sized Ceria Slurry for Damascene Gate CMP Process Y. Kim, K. Lee, S. Kim, U. Paik and J. Park (Hanyang University)
o 448 Dependence of Decarbonation of Cerium Precursor on Synthesized Ceria Particle and Its Influence of STI CMP Performance K. Lee, Y. Kim, S. Kim, U. Paik and J. Park (Hanyang University)
o 449 Fabrication of the Plasma Assisted Atomic Layer Deposition- Al2O3 buried SOI with Direct Bonding M. Kang and C. Choi (Cheju National University)
o 450 Non-aqueous Electrophoretic Deposition of Aluminum Nitride from its Suspension in Acetyl Acetone B. Workie (Delaware State University), B. McCandless (University of Delaware) and Z. Gebeyehu (Columbus State University)
o 451 Effects of Various Factors on the Amount of AlN Coated in Electrophoretic Deposition of Aluminum Nitride from its Suspension in Acetyl Acetone B. Workie (Delaware State University), B. McCandless (University of Delaware) and Z. Gebeyehu (Columbus State University)
 

Wednesday, May 10, 2006

Plaza Ballroom D, Concourse Level

Electrochemical Processes in Advanced Packaging

Co-Chairs: J. Kelly and G.R. Stafford
TimeAbs#Title and Authors
10:00 452 Simultaneous Filling of Microvia and Through Hole by Copper Electroplating for High Density Interconnection of PCB W. Dow, H. Chen and M. Yen (National Yunlin University of Science & Technology)
10:40 453 Back-end Copper Metallization for Advanced Packaging : Bump, RDL, and TSV B. Kim, T. Ritzdorf and D. Schmauch (Semitool, Inc.)
11:00 454 Electrodeposition of Sn Bumps for COG (Chip-on-Glass) Packaging Process B. Jung, H. Won, K. Lee and T. OH (Hongik University)
11:20 455 Characterizing an Electrochemical Printing Process for Fabricating Metal Microstructures J. B. Nelson and D. Schwartz (University of Washington)
11:40 456 Numerical and Experimental Investigation of Wet Chemical Etching of Silicon Wafers K. Kaneko (Fuji Electric Advanced Technology Co., Ltd.), A. Tamenori (Fuji Electric Device Technology Co., Ltd.), N. Alleborn and F. Durst (Erlangen-Nuremberg Univ.)
 

New Apsects of Alloy and Compound Deposition

Co-Chairs: J. L. Stickney and T.P. Moffat
TimeAbs#Title and Authors
14:00 457 Epitaxial Growth of Cu on Au(111) and Ag (111) by Monolayer Restricted Galvanic Displacement N. G. Dimitrov, R. Vasilic and L. Viyannalage (SUNY at Binghamton)
14:20 458 Binary Platinum Alloys by Underpotential Deposition of the Reactive Metal. J. J. Mallett, E. Svedberg, T. Moffat, W. Egelhoff and U. Bertocci (NIST)
14:40 459 The Formation of Nanofilms of Pt and Cu using Surface Limited Redox Replacement Reactions in an EC-ALE Cycle J. Stickney (University of Georgia) and Y. Kim (The University of Georgia)
15:00 460 Induced Codeposition of Alloys of W, Mo and Re with the Fe-Group and other Transition Metals E. Gileadi and N. Eliaz (Tel-Aviv University)
15:40 461 Investigations on the Electrodeposition of Ni-W Alloys from Ethylene Diamine - Citrate Baths for LIGA-MEMS Applications A. Haseeb and K. Bade (Forschungszentrum Karlsruhe)
16:00 462 Electrodeposition of Magnetic Multilayers into Micro- and Nano- Recesses E. Podlaha (Louisiana State University), D. Iyer, M. Murphy (LSU), Y. Li (Louisiana State University), R. Mishra (LSU), M. Moldovan and D. Young (Louisiana State University)
16:40 463 Challenging the Electrodeposition of Thick Cadmium Telluride Layers J. Rousset and L. Daniel (CNRS)
17:00 464 Nucleation of Binary Cu-Se Phases and Electrochemical Cementation Mechanism on Poloycrystalline Molybdenum Thin Films in Cu(II)-In(III)-Se(IV) Acidic Solutions E. Chassaing (CNRS), O. Ramdani (IRDEP), B. Canava (IREM), P. Grand, M. Lamirand, O. Roussel, A. Etcheberry, J. Guillemoles (IRDEP), D. Lincot (LECA) and O. Kerrec (IRDEP)
17:20 465 Plasma Treatment for Glass-to-Glass Direct Bonding D. Pascual (SUSS MicroTec)
17:40 466 Electrodeposition of a Co/Cu Multilayered Microdevice Y. Li, R. Fan, M. Moldovan, D. Young, W. Wang and E. Podlaha (Louisiana State University)
 

Thursday, May 11, 2006

Plaza Court 2, Concourse Level

Nanostructures // CMP

Co-Chairs: J.L. Stickney and L. Deligianni
TimeAbs#Title and Authors
08:00 467 Atomic-Scale Quantum Switches: An Approach Towards Quantum Electronics at Room Temperature T. Schimmel, F. Xie and C. Obermair (University of Karlsruhe)
08:40 468 Electrochemical Catalyst Placement for Bottom-up Nanoelectronics P. M. Vereecken, G. Hautier, A. Negreira and G. Groeseneken (IMEC)
09:00 469 Producing Shape-controlled Metal Nanowire and Nanotube by an Electrochemical Method M. Motoyama, Y. Fukunaka (Kyoto University), T. Sakka (Kyoto Universuty) and Y. Ogata (Kyoto University)
09:20 470 Gold Electrodeposition On n-Si Q. Huang (IBM Corporation), H. Deligianni (IBM) and L. Romankiw (IBM Corporation)
09:40 471 Nucleation and Growth Study of Nickel Nanoparticles on Silicon. A. Romo Negreira, P. M. Vereecken, C. Whelan (IMEC) and K. Maex (KU Leuven)
10:00 Intermission (20 Minutes)
10:20 472 Membrane-Mediated Electropolishing: A New Method to Planarize Copper S. Mazur, G. Foggin and C. Jackson (Dupont)
11:00 473 Electrochemical Mechanical Planarization (eCMP) of Copper Thin Films S. Aksu, I. Emesh and B. Basol (ASM NuTool Inc)
11:20 474 Investigation of Possible Dendritic Growth in the Post-CMP Cleaning Conditions C. Gabrielli (CNRS), C. Mace, L. Beitone (Altis), E. Ostermann and H. Perrot (CNRS-LISE)
11:40 475 An Experimental Characterization of Dissolution and Complexation Kinetics in Copper CMP R. Palaparthi and G. Muldowney (CMP Technologies Inc, Rohm and Haas Electronic Materials)
12:00 476 Electrochemistry of Ta in Aqueous HF I. Suni and B. Du (Clarkson University)
12:20 477 Electrochemical Characterization of Copper Electropolishing in Phosphoric Acid J. Knoll, U. Landau (Case Western Reserve University), R. Akolkar, T. Andryushchenko and A. Miller (Intel Corporation)
12:40 478 The effect of Hydrazine on Copper CMP in Nitric Acid Based Slurries S. Moganty and R. Srinivasan (Indian Institute of Technology Madras)