209th ECS Meeting - Denver, Colorado

May 07 - May 12, 2006

PROGRAM INFORMATION
 

K2 - Silicon Materials Science and Technology X

Electronics and Photonics
 

Monday, May 8, 2006

Governor's Square 10, Concourse Level

Plenary

Co-Chairs: H. Huff, H. Iwai and H. Richter
TimeAbs#Title and Authors
10:00 Introductory Remarks (5 Minutes)
10:05 507 Forty Years of Moore's Law: Ever Smaller Transistors and Ever Larger Wafers. G. Hutcheson (VLSI Research)
10:35 508 Present and Future of Si-based Transistor Technology for Memories D. Park (Samsung Electroncis) and B. Ryu (Samsung Electronics)
11:05 509 Front-End Process Technology for hp65/45 CMOS Devices Y. Nara, F. Ootsuka and K. Nakamura (Selete)
11:35 510 Trends in European R&D -- Advanced Process Control Down to Atomic Scale for Micro - and Nanotechnologies L. Pfitzner (Fraunhofer-Institut fuer Integrierte Systeme und Bauelementetechnologie)
 

300 MM

Co-Chairs: W. Huber and D. Gilles
TimeAbs#Title and Authors
14:00 511 Parameters of Intrinsic Point Defects in Silicon Based on Crystal Growth, Wafer Processing, Self- and Metal- Diffusion V. V. Voronkov (MEMC Electronic Materials) and R. Falster (MEMC Electronic Materials, Novara, Italy)
14:30 512 A Selective Review of the Quantification of Defect Dynamics in Growing Czochralski Silicon Crystals M. Kulkarni (MEMC Electronic Materials, Inc.)
15:00 513 An Atomically Accurate Model for Point Defect Aggregation in Silicon T. Sinno (University of Pennsylvania), W. Haeckl and W. von Ammon (Siltronic AG)
15:20 Intermission (20 Minutes)
15:40 514 Growth Technologies for 300mm Arsenic Heavily Doped Silicon Single Crystals H. Tu, Q. Zhou, G. Zhang, Z. Wu, X. Dai, T. Jia, F. Fang and Q. Chang (General Research Institute for Nonferrous Metals)
16:00 515 Defect Formation Behaviors in Heavily Doped Czochralski Silicon W. Sugimura, T. Ono, S. Umeno, M. Hourai (SUMCO Corporation) and K. Sueoka (Okayama Prefectural Univ)
 

Tuesday, May 9, 2006

Governor's Square 10, Concourse Level

300 MM (Cont.)

Co-Chairs: D. Gilles and W. Huber
TimeAbs#Title and Authors
08:00 516 Wafer Strength and Slip Generation Behavior in 300mm Wafers T. Ono, W. Sugimura (SUMCO Corporation), T. Kihara (SUMCO) and M. Hourai (SUMCO Corporation)
08:30 517 Warp of Silicon Wafers Produced from WireSaw Slicing: Modeling, Simulation, and Experiments P. Gupta and M. Kulkarni (MEMC Electronic Materials, Inc.)
08:50 518 Lessons Learned from the 300 mm Transition S. Kramer, J. Ferrell, J. Draina and D. Fandel (ISMI)
09:10 519 Discussion on Issues Toward 450mm Wafer M. Watanabe (SEZ Japan), T. Fukuda (Fujutsu), A. Ogura (Meiji University), Y. Kirino (Toshiba Ceramics) and M. Kohno (Komatsu Electronic Metals)
09:30 520 300 mm SOI for High Volume Manufacturing G. Pfeiffer (IBM), M. Haag, M. Schmidt, R. Krause (IBM Procurement Technology Center), P. Tsai and J. Lee (IBM Corp.)
 

Process Development and Modeling

Co-Chairs: U. Gosele and P. Packan
TimeAbs#Title and Authors
10:15 521 Growth Kinetics and Electrical Properties of Ultrathin Silicon-Dioxide Layers H. Z. Massoud (Duke University)
10:45 522 Computational Design of Si/SiO2 Interface for Advanced and Future Electronics A. Korkin (Nano and Giga Solutions, Inc.), G. Bersuker (Sematech), J. Greer (Tyndall National Institute) and R. Bartlett (University of Florida)
11:15 523 Defect Dynamics in the Presence of Nitrogen and Oxygen in Growing Czochralski Silicon Crystals M. Kulkarni (MEMC Electronic Materials, Inc.), V. V. Voronkov (MEMC Electronic Materials) and R. Falster (MEMC Electronic Materials, Novara, Italy)
11:30 524 Defect Dynamics in the Presence of Oxygen in Growing Czochralski Silicon Crystals M. Kulkarni (MEMC Electronic Materials, Inc.), V. V. Voronkov (MEMC Electronic Materials) and R. Falster (MEMC Electronic Materials, Novara, Italy)
11:45 525 Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Wafers G. Kissinger, J. Dabrowski (IHP), A. Sattler, C. Seuring, T. Mueller (Siltronic AG), H. Richter (ihp-Microelectronics) and W. von Ammon (Siltronic AG)
 

Process Development and Modeling (Cont.)

Co-Chairs: P. Packan and U. Gosele
TimeAbs#Title and Authors
14:00 526 First Principles Calculation for Cu Gettering by Dopant or Dopant-Vacancy Complex in Silicon Crystal K. Sueoka, S. Ohara, S. Shiba and S. Fukutani (Okayama Prefectural Univ)
14:20 527 Analysis of Internal Gettering of Iron Based on the Nucleation Model of Iron Precipitation K. Nakamura and J. Tomioka (Komatsu Electronic Metals Co.,Ltd.,)
14:40 528 Si Self-Diffusion in High Concentration B-Doped Si Using Highly Pure 30Si Epitaxial Layer S. Matsumoto (Keio University)
15:00 529 Modeling Growth Behavior for Si1-xGex from SiH4 and GeH4 by CVD X. Yang (University of Texas at Arlington) and M. Tao (The University of Texas at Arlington)
 

Wednesday, May 10, 2006

Governor's Square 10, Concourse Level

Materials and Process Integration

Co-Chairs: S. Ikeda and M. Rodder
TimeAbs#Title and Authors
10:00 530 Scaled CMOS with SiON and high-k K. Ishimaru (Toshiba Corp.)
10:30 531 Multiple Gate MOSFETs W. P. Maszara, Z. Krivokapic, Q. Xiang and M. Lin (AMD)
11:00 532 Mobility Enhancement and Strain Integration in Advanced CMOS C. H. Diaz (TSMC)
11:30 533 Defect Engineering Considerations for Strained Silicon Substrates C. Claeys, G. Eneman, M. Scholz, R. Loo, P. Verheyen and K. De Meyer (IMEC)
11:50 534 Modelling of Morphological Changes by Surface Diffusion in Silicon Trenches T. Mueller (Siltronic AG), D. Dantz (Volkswagen AG), W. von Ammon (Siltronic AG), J. Virbulis and U. Bethers (Center for Processes Analysis and Research Ltd.)
 

Materials and Process Integration (Cont.)

Co-Chairs: M. Rodder and S. Ikeda
TimeAbs#Title and Authors
14:00 535 Thermal Agglomeration of Ultra-Thin SOI and SSOI: A Quantitative Stability Study and Physical Model to Guide SOI Process Development D. T. Danielson, J. Michel and L. Kimerling (Massachusetts Institute of Technology)
14:20 536 Impact of Defects in Silicon Substrate on Flash Memory Characteristics Y. Hirano (Spansion Inc.), K. Yamazaki, F. Inoue, K. Imaoka (Spansion Japan Limited), K. Tanahashi and H. Yamada-Kaneta (Fujitsu Lab.)
14:40 537 Low-resistance Ti/n-type Si(100) Contacts by Monolayer Se Passivation J. Zhu, X. Yang (University of Texas at Arlington) and M. Tao (The University of Texas at Arlington)
 

Integrated Metrology and Diagnostics

Co-Chairs: L. Fabry and T. Hattori
TimeAbs#Title and Authors
15:15 538 Breakthrough of in-line Inspection Technology for Beyond 65nm Device Volume Production Y. Yamazaki (TOSHIBA)
15:45 539 Scenario for a Yield Model Based on Reliable Defect Density Data and Linked to Advanced Process Control A. Nutsch and R. Ochsner (Fraunhofer Institute Integrated Systems and Device Technology)
16:15 540 Standardization of Measurement of Nitrogen Concentration in CZ Silicon Crystals N. Inoue (Osaka Prefecture University), A. Karen and H. Yagi (Japan Electronics & Information Technology Association)
16:35 541 Infrared Absorption Measurement of Carbon Concentration in Silicon Crystals N. Inoue (Osaka Prefecture University), M. Nakatsu (RIAST, Osaka Prefecture University) and V. Akhmetov (IHP/BTU Joint Lab, BTU Cottbus)
16:55 542 Standardization of Characterization of Bulk Micro-defects and Denuded Zones in Annealed CZ Si R. Takeda (JEITA), N. Inoue (Osaka Prefecture University), K. Moriya, K. Kashima (JSPS 145 Committee and JEITA), K. Nakashima (JSPS 145 Committee), M. Kato (Sumitomo Electric Industries, Ltd.), S. Kitagawa (JEITA), T. Ono (SUMCO Corporation), K. Nakai, H. Urushido (JEITA), N. Nango (JSPS 145 Committee) and V. Akhmetov (IHP/BTU Joint Lab, BTU Cottbus)
 

Thursday, May 11, 2006

Governor's Square 10, Concourse Level

Integrated Metrology and Diagnostics (Cont.)

Co-Chairs: T. Hattori and L. Fabry
TimeAbs#Title and Authors
08:00 543 X-ray Reciprocal Space Mapping and Synchrotron Radiation Topography of Strained Si/Si1-xGex on Bonded SOI T. Ma, H. Tu, G. Hu, B. Shao and A. Liu (General Research Institute for Nonferrous Metals)
08:20 544 SOI Low Frequency Noise and Interface Trap Density Measurements with the Pseudo MOSFET V. A. Kushner, J. Yang, J. Choi, T. Thornton and D. Schroder (Arizona State University)
08:40 545 1/f Noise as a Tool to Assess Fermi Level Pinning (EF) at the HfO2/poly-Si Interface in high-k n-MOSFETs P. Srinivasan (IMEC / New Jersey Institute of Tech.), E. Simoen, L. Pantisano, C. Claeys (IMEC) and D. Misra (New Jersey Institute of Technology)
09:00 546 Study of Inhibition Characteristics of Slurry Additives in Copper CMP using Force Spectroscopy M. K. Keswani, H. Lee (University of Arizona), S. Babu, U. Patri, Y. Hong (Clarkson University), L. Economikos (IBM Corporation), M. Goldstein (Intel Corporation), L. Borucki (Araca Incorporated) and A. Philipossian (University of Arizona)
09:20 547 Influence of Gas Velocity and Humidity on Diethyl Phthalate Adsorption and Desorption on Silicon Surface H. Habuka, M. Masaki, K. Suzuki, T. Takeuchi and M. Aihara (Yokohama National University)
09:40 Intermission (20 Minutes)
 

Strained Silicon

Co-Chairs: R. Wise and E. Weber
TimeAbs#Title and Authors
10:00 548 Local Strain Measurements on Strained-Si/SiGe Heterostructures Using Automatic Convergent Beam Electron Diffraction (CBED) Analysis W. Zhao (North Carolina State University), G. Duscher (North Carolina State University and Oak Ridge National Lab), R. Wise (Texas Instrument Co.) and G. Rozgonyi (North Carolina State University)
10:20 549 Analysis of Nano-scale Stress in Strained Silicon Materials and Microelectronics Devices by Energy-filtered Convergent Beam Electron Diffraction P. Zhang, A. Istratov (University of California at Berkeley, and Lawrence Berkeley National Laboratory), H. He, C. Nelson, J. Ager (Lawrence Berkeley National Laboratory), E. Stach (Purdue University), J. Spence, C. Kisielowski (Lawrence Berkeley National Laboratory) and E. Weber (University of California at Berkeley, and Lawrence Berkeley National Laboratory)
10:40 550 Threading vs Misfit Dislocations in Strained-Si/SiGe Heterostructures: Differentiation by Preferential Etching and Minority Carrier Transient Spectroscopy J. Lu, R. Zhang and G. Rozgonyi (North Carolina State University)
11:00 Discussion (20 Minutes)
11:20 551 Probing Nanoscale Local Lattice Strains in Advanced Si CMOS Devices by CBED: A Tutorial with Recent Results M. Kim, J. Huang (University of Texas at Dallas), P. Chidambaram, R. Irwin, P. Jones, J. Weijtmans, E. Koontz, Y. Wang, S. Tang (Texas Instruments) and R. Wise (Texas Instrument Co.)
11:50 Session Concluding Remarks (10 Minutes)
12:00 Symposium Concluding Remarks (10 Minutes)