209th ECS Meeting - Denver, Colorado

May 07 - May 12, 2006

PROGRAM INFORMATION
 

O1 - Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Processing III

High Temperature Materials/Electronics and Photonics
 

Monday, May 8, 2006

Governor's Square 17, Concourse Level

Reactor Scale Modeling

Co-Chairs: M. Swihart and M. Sugiyama
TimeAbs#Title and Authors
10:00 773 Chemical Vapor Deposition: It's not just Chemistry C. R. Kleijn (Delft University of Technology)
10:40 774 Pyrocarbon Growth from Allene and Allylene by Chemical Vapor Deposition M. Kawase and K. Miura (Kyoto University)
11:00 775 Reduced Gas Phase and Surface Kinetics for Silicon Carbide Epitaxial Growth M. Masi and A. Veneroni (Politecnico di Milano)
11:20 776 Modeling the Kinetics of Vapor Transport in Halide-Activated Cementation Packs V. A. Ravi and T. Nguyen (California State Polytechnic University)
11:40 777 Small-Batch Reactor Development for Silicon Epitaxial Film Growth Based on Theory of Transport Phenomena H. Habuka, H. Sakakibara, M. Kawaoka (Yokohama National University), K. Arimura, L. Scudder and A. Okabe (Epicrew Corp.)
 

Precursor Studies

Co-Chairs: R. Schmid and M. Koshi
TimeAbs#Title and Authors
14:00 778 A Comparative Study of Ruthenium(0) MOCVD Precursor Complexes N. Popovska, A. Schneider, I. Jipa (University Erlangen-Nuremberg) and U. Zenneck (University of Erlangen-Nuremberg)
14:20 779 Surface Chemistry Studies of Atomic Oxygen and Alkyl Precursors During Metal Oxide CVD S. F. Szymanski and C. Wolden (Colorado School of Mines)
14:40 780 1.5 S-Butyl 1.5 N-Butyl Bismuth and 1.5-Butyl 1.5-Isopropyl Bismuth as new Liquid Bismuth Precursors for SBT Thin Film Deposition M. Lisker (Otto-von-Guericke University Magdeburg), M. Silinskas (Otto von Guericke University Magdeburg) and S. Matichyn (Otto-von-Guericke-University Magdeburg)
15:00 781 Choice of precursors in Vapor-phase Surface Modification B. Kobrin, T. Zhang and J. Chinn (Applied Microstructures, Inc.)
 

Gas-Phase Chemistry and Diagnostics

Co-Chairs: D. Goodwin and N. Popovska
TimeAbs#Title and Authors
15:40 782 Gas Phase and Surface Chemical Kinetics in Silicon Chemical Vapor deposition M. Koshi (University of Tokyo)
16:20 783 BAC-MP4 Predictions of Thermochemistry of Period IV Compounds; Indium, Tin and Antimony. A. J. Skulan, M. Allendorf, I. Nielsen (Sandia National Laboratories) and C. Melius (Lawrence Livermore National Laboratory)
16:40 784 Detection of Precursor Molecules in the MCR-CVD (metal chloride reduction-chemical vapor deposition) of Copper A. Hibi, A. Susa and M. Koshi (University of Tokyo)
17:00 785 Theoretical Prediction of Accurate Rate Constants for the Gas Phase Decomposition of a GaN Single Molecule Precursor R. Schmid and M. Tafipolsky (Ruhr-Universität Bochum)
 

Tuesday, May 9, 2006

Governor's Square 17, Concourse Level

Surface Chemistry I

Co-Chairs: D. Carroll and C. Kleijn
TimeAbs#Title and Authors
08:00 786 Deposition Rate Profile Analysis of High-temperature Silicon Dioxide Film in a Commercial Scale LPCVD Reactor R. Shimizu, M. Ogino, S. Sakai (Fuji Electric Advanced Technology Co., Ltd.) and Y. Shimogaki (University of Tokyo)
08:20 787 DFT Molecular Dynamics Simulations of Gas-Surface Interactions in the ALD of HfO2 with HfCl4 and water C. B. Musgrave, A. Mukhopadhyay (Stanford University) and J. Sanz (Universidad de Sevilla)
08:40 788 In Situ Characterization of Gas-Phase Species Present During Hafnium Oxide Atomic Layer Deposition J. E. Maslar, W. Hurst, D. Burgess, W. Kimes and N. Nguyen (NIST)
09:00 789 Oxygen Anion Emission from 12CaO.7Al2O3 under Various Pressure Conditions M. Yamamoto, A. Shima (The University of Tokyo) and M. Sadakata (Kogakuin University)
09:20 790 Oxygen in Growth of Metal-free Carbon Nanotubes by SiC Decomposition W. Lu, S. Samdandam, C. Britton (Fisk University), J. Boeckl and W. Mitchel (Air Force Research Laboratory)
 

Novel Processing Schemes

Co-Chairs: C. Wolden and V. Donnelly
TimeAbs#Title and Authors
10:00 791 Mechanistic Aspects of Initiated Chemical Vapor Deposition (iCVD) of Polymeric Thin Films K. K. Gleason and K. K. Lau (Massachusetts Institute of Technology)
10:40 792 Pulsed-Pressure Mass Transport for High Conversion Efficiency Chemical Vapor Deposition S. P. Krumdieck and H. Cave (University of Canterbury)
11:00 793 Plasmon Assisted Chemical Vapor Deposition D. A. Boyd, D. Goodwin, M. Y. El-Naggar (California Institute of Technology), L. Greengard (Courant Institute of Mathematical Sciences, New York University) and M. Brongersma (Stanford University)
11:20 794 Gas Phase Selective Etching of Oxide Nanostructures S. Akbar, C. Carney (The Ohio State University), S. Yoo and K. Sandhage (Georgia Institute of Technology)
11:40 795 Development of Aluminum Nitride by Molecular Layer Deposition using Trimethylaluminum and Ammonia K. G. Reid, A. Dip and S. Sasaki (Tokyo Electron U.S.)
 

Surface Chemistry II

Co-Chairs: M. Sugiyama and K. Gleason
TimeAbs#Title and Authors
14:00 796 CVD Growth of Group-III Nitride Semiconductors: An ab Initio Based Multiscale Study J. Neugebauer (Max-Planck-Institut fuer Eisenforschung)
14:40 797 Integrated Computatoinal Chemistry Approach to the Semiconductor Process Simulation M. Koyama, T. Masuda, H. Tsuboi, A. Endou, M. Kubo, C. Del Carpio and A. Miyamoto (Tohoku University)
15:00 798 Non-linear Surface Reaction Kinetics of GaAs MOVPE Explored by Selective Area Growth H. Song, M. Sugiyama, Y. Nakano (the University of Tokyo) and Y. Shimogaki (University of Tokyo)
15:20 799 Determination of Surface Reaction Rate Constant under Mass-transport-limited Kintetics: Si Epitaxial Growth from SiHCl3 M. Sugiyama (The University of Tokyo), A. Nagato, A. Hirosawa (Komatsu Ltd.) and Y. Shimogaki (University of Tokyo)
 

Plasma Processing

Co-Chairs: R. Schmid and J. Neugebauer
TimeAbs#Title and Authors
16:00 800 Reactions on a Plasma Reactor Wall, Studied by a New Spinning Wall Method V. M. Donnelly, P. Kurunczi and J. Guha (University of Houston)
16:40 801 Langmuir-probe Characterization of an Inductively-Coupled Remote Plasma System intended for CVD and ALD A. Boogaard, A. Kovalgin, T. Aarnink, R. Wolters, J. Holleman, I. Brunets and J. Schmitz (University of Twente)
17:00 802 PECVD Synthesis of Metal Oxide Thin Films C. Wolden (Colorado School of Mines)
17:20 803 Characterization of Diamond Precursors in Front of the Substrate from CH4-CO2 Plasmas L. Vandenbulcke, J. Delfau (CNRS), O. Aubry (CNRS-Université d'Orléans) and C. Vovelle (CNRS)
17:40 804 High Efficient Capacitance Coupled Plasma Reactor for Enhanced Surface Reaction K. R. Chiu (DryScrub)
 

Exhibit Hall, Concourse Level

Tuesday Evening Poster Session

Co-Chairs: M. Swihart and R. Schmid
TimeAbs#Title and Authors
o 805 Arsine Absorption Behavior at 1392 nm and Strategy for Trace Water Vapor Detection in Arsine using Cavity Ring-down Spectroscopy J. Feng, M. Raynor (Matheson Tri-Gas, Inc.) and K. Bertness (NIST)
o 806 Etch Characteristics and Mechanisms in Atomic Scale Etching of Poly-Silicon C. kim (Ajou University), T. Kim, C. Park, H. Yun, H. Rhee (Ajou Univeristy), Y. Kim (FOI Korea) and C. Shin (Ajou Univeristy)
o 807 Low Temperature Deposition of Anatase TiO2 on Si(100) Surfaces F. Hirose (Yamagata Univiersity), M. Ito, H. Wajima and K. Kurita (Yamagata University)
o 808 Diene Tungsten Carbonyl Complexes as Novel MOCVD Precursors N. Popovska, I. Jipa (University Erlangen-Nuremberg), U. Zenneck (University of Erlangen-Nuremberg) and A. Schneider (University Erlangen-Nuremberg)
o 809 Liquid delivery MOCVD of Ruthenium Films from Ru(EtCp)2 with Toluene Solvent M. Lisker, T. Hur’yeva and E. Burte (Otto-von-Guericke University Magdeburg)
o 810 Iridium Electrodes for Ferroelectric Capacitors Deposited by Liquid-Delivery MOCVD and PVD M. Lisker, Y. Ritterhaus, T. Hur'yeva and E. Burte (Otto-von-Guericke University Magdeburg)
o 811 The Influence of the Deposition and Annealing Temperatures on the Structure and Properties of Zirconium Oxide M. Lisker (Otto-von-Guericke University Magdeburg), M. Silinskas (Otto von Guericke University Magdeburg), S. Matichyn (Otto-von-Guericke-University Magdeburg) and E. Burte (Otto-von-Guericke University Magdeburg)
o 812 Investigation of Thermal Decomposition of the Titanium MOCVD Precursor [Ti(OPri)2(thd)2], Employing Matrix Isolation-FTIR Technique A. Devi (Ruhr-Unversity Bochum), R. Bhakta, H. Bettinger and H. Parala (Ruhr-University Bochum)
o 813 Surface Characterization Of Chromium Oxide Thin Films In Dependence On CVD Growth Process Parameters K. A. Gesheva (Bulgarian Academy of Sciences), T. Ivanova (Central Laboratory of Solar Energy and New Energy Sources - BAS), A. Szekeres (Institute of Solid State Physics) and O. Trofimov (Institute of Microelectronics and High Purity Materials)
o 814 Polymer/Ceramic Nanocomposites Prepared by the Extrusion of Alumina Coated Polyethylene Particles X. Liang (University of Colorado), J. spencer, J. Ferguson, K. Buechler, M. Groner (ALD NanoSolutions, Inc.), G. Zhan, S. M. George and A. Weimer (University of Colorado)
o 815 Synthesis of Zinc Sulfide Nanoparticles by Spray Pyrolysis H. Zhang (University at Buffalo), K. Yong (University at Buffalo (SUNY)) and M. Swihart (The University at Buffalo (SUNY))
o 816 Computational Modeling of Silicon Nanoparticle Formation H. Dang (University at Buffalo (SUNY)) and M. Swihart (The University at Buffalo (SUNY))
o 817 Computational Fluid Dynamics (CFD) Modeling of a Laser-Driven Aerosol Reactor M. Swihart (The University at Buffalo (SUNY)) and Y. He (University at Buffalo (SUNY))
o 818 Non-conventional Tight-binding Molecular Dynamics Simulation of Bare Silicon and Silicon-hydrogen Clusters P. Tereshchuk (Uzbekistan Academy of Sciences), Z. Khakimov (Uzbekinstan Academy of Sciences), N. Sulaymanov, F. Umarova, A. Mukhtarov (Uzbekistan Academy of Sciences) and M. Swihart (The University at Buffalo (SUNY))
o 819 A Pseudopotential Car-Parrinello Molecular Dynamics Approach using Real Space Wavefunctions for the Simulation of Systems with arbitrary Periodicity R. Schmid and M. Tafipolsky (Ruhr-Universität Bochum)
o 820 Refinement of the Growth Kinetics of GaAs MOVPE Using Multi-Scale Analysis I. Im (Iksan National College), H. Song, M. Sugiyama, Y. Nakano (The University of Tokyo) and Y. Shimogaki (University of Tokyo)
 

Wednesday, May 10, 2006

Governor's Square 17, Concourse Level

Metal Oxide Deposition

Co-Chairs: D. Goodwin and S. George
TimeAbs#Title and Authors
10:00 821 Structure and Composition of CVD-Metal Oxide Coatings as Working Electrodes in Electrochromic "Smart Windows" K. A. Gesheva (Bulgarian Academy of Sciences), T. Ivanova (Central Laboratory of Solar Energy and New Energy Sources - BAS), F. Hamelmann (Bielefeld University), O. Trofimov (Institute of Microelectronics and High Purity Materials) and M. Abrashev (Sofia University)
10:20 822 MOCVD of Strontium Tantalate Thin Films using Sr[Ta(OEt)5(OC2H4OMe)]2 Precursor M. Lisker (Otto-von-Guericke University Magdeburg), M. Silinskas (Otto von Guericke University Magdeburg), P. Veit and E. Burte (Otto-von-Guericke University Magdeburg)
10:40 823 PECVD Synthesis of TiO2 Thin Films for Dielectric Applications W. Yang and C. Wolden (Colorado School of Mines)
11:00 824 Microstructural Modulation in Ceramics via Gas Phase Regenerative Scheme A. Azad (University of Toledo)
11:20 825 Er-doped Silicon-rich Silicon Oxide (SRSO) Thin Films Deposited by ECR-PECVD at High Temperatures J. Wojcik, O. Zalloum and M. Flynn (McMaster University)
11:40 826 Metalorganic Chemical Vapor Deposition of (Pb,Ba)TiO3 Thin Films: Process Science, Diagnostics, and Film Characterization. M. Y. El-Naggar, D. A. Boyd and D. Goodwin (California Institute of Technology)
 

Surface Chemistry III

Co-Chairs: M. Swihart and K. Gesheva
TimeAbs#Title and Authors
14:00 827 Thin and Continuous CVD Cu Seed Layer Deposition by Controlling Deposition Parameters on Ru and Ta Under-layers. H. Kim (University of Tokyo), Y. Kojima, N. Yoshii, H. Sato, S. Hosaka (Tokyo Electron AT Limited) and Y. Shimogaki (University of Tokyo)
14:20 828 Reduction of Copper Surface with Formic Acid for 32-nm-Node ULSI Metallization: Surface Kinetics Study M. Sugiyama (The University of Tokyo), K. Ishikawa (Fujitsu Ltd.), I. Gunji (Tokyo Electron Ltd.), K. Yamashita and T. Ohba (The University of Tokyo)
14:40 829 Optimizing Chemical Vapor Deposition of P-type and N-type Semiconducting Boron Carbide Thin Films J. I. Brand and M. Hallbeck (University of Nebraska)
15:00 830 Characterisation of High Temperature CVD Iron Y. Low, J. Montgomery and H. Gamble (Queen's University of Belfast)
 

Particle Synthesis and Processing

Co-Chairs: C. Wolden and D. Carroll
TimeAbs#Title and Authors
15:40 831 Atomic Layer Deposition on Particles S. M. George (University of Colorado)
16:20 832 Surface Modification of Aerosolized Silicon Nanoparticles J. T. Roberts, Y. Liao and A. Nienow (University of Minnesota)
16:40 833 Composite Thin Film Particles for Protection from UVA/UVB - Rays D. M. King (University of Colorado), J. Ferguson (ALD NanoSolutions, Inc.), G. Zhan (University of Colorado), C. Gump, K. Buechler (ALD NanoSolutions, Inc.), J. McCormick, S. M. George and A. Weimer (University of Colorado)
17:00 834 Synthesis of Tellurium Dioxide Nanoparticles by Spray Pyrolysis H. Zhang (University at Buffalo) and M. Swihart (The University at Buffalo (SUNY))
17:20 835 Vapor Phase Synthesis and Catalytic Properties of Metallic and Intermetallic Nanoparticles & Nanowires S. S. El-Shall (Virginia Commonwealth University)
17:40 836 Production of Oxidation-resistant Nanosized Metal Powders L. Hakim, C. Vaughn, G. Zhan and A. Weimer (University of Colorado)